可変バンド ギャップ ピンホール フリー メチル鉛ハライド ペロブスカイト薄膜の低圧蒸気支援ソリューション プロセス
September 8th, 2017
•Carolin M. Sutter-Fella1,2,3*, Yanbo Li1,4*, Nicola Cefarin1,5,6, Aya Buckley1,7, Quynh Phuong Ngo8,9, Ali Javey2,3, Ian D. Sharp1, Francesca M. Toma1
1Joint Center for Artificial Photosynthesis, Chemical Sciences Division, Lawrence Berkeley National Laboratory, 2Electrical Engineering and Computer Sciences, University of California, Berkeley, 3Materials Science Division, Lawrence Berkeley National Laboratory, 4Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 5Department of Physics, Graduate School of Nanotechnology, University of Trieste, 6TASC Laboratory, IOM-CNR - Istituto Officina dei Materiali, 7Department of Chemistry, University of California, Berkeley, 8Materials Science and Engineering, University of California, Berkeley, 9Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory
ここでは、提案は CH3NH3の合成のためのプロトコル CH3NH3Br 前駆体と、その後ピンホール フリー、連続 CH3NH PbI3 xBrx 3薄膜形成のため、高効率太陽電池と他のオプトエレクトロニクス デバイスのアプリケーション。
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