Alçak basınç buhar destekli çözüm işlemini Tunable Grup Gap iğne deliği-Alerjik Methylammonium kurşun Halide Perovskite filmler için
September 8th, 2017
•Carolin M. Sutter-Fella1,2,3*, Yanbo Li1,4*, Nicola Cefarin1,5,6, Aya Buckley1,7, Quynh Phuong Ngo8,9, Ali Javey2,3, Ian D. Sharp1, Francesca M. Toma1
1Joint Center for Artificial Photosynthesis, Chemical Sciences Division, Lawrence Berkeley National Laboratory, 2Electrical Engineering and Computer Sciences, University of California, Berkeley, 3Materials Science Division, Lawrence Berkeley National Laboratory, 4Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 5Department of Physics, Graduate School of Nanotechnology, University of Trieste, 6TASC Laboratory, IOM-CNR - Istituto Officina dei Materiali, 7Department of Chemistry, University of California, Berkeley, 8Materials Science and Engineering, University of California, Berkeley, 9Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory
Burada, mevcut bir protokol CH3NH3sentezi için ben ve CH3NH3Br öncüleri ve iğne deliği-Alerjik, sürekli CH3NH3PBI3-xBrx ince filmler için sonraki oluşumu uygulama yüksek verimli güneş hücreleri ve diğer opto-elektronik aygıtlar.
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