Name: preparation of large-area vertical 2d crystal hetero-structures through the sulfurization of transition metal films for device fabrication
Uploaded: 2017-11-28T13:00:00
Description: Watch this Scientific Journal Video about Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication at JoVE.com

这项工作得到了部分支持, 其中大部分是由 105-2221-001-011-MY3 和最多 105-2622-8-002-001 的项目资助, 由科技部, 台湾, 并部分由应用科学研究中心资助的重点项目, 中央研究院,台湾。

1. 单个2D 材料的增长 (MoS2和 WS2)
<ol><li>
用射频溅射系统进行过渡金属沉积
	<ol>
<li>一个干净的 2 x 2 cm2蓝宝石衬底放置在样品持有人与抛光的一面向溅射系统的目标的过渡金属沉积。蓝宝石基板的选择是由于蓝宝石在高温和原子平面表面的化学稳定性。</li>
		<li>泵下溅射室到 3 x 10-6乇依次使用一个机械泵, 其次是扩散泵。</li>
		<li>将 Ar 气体注入溅射系?...

<ol>
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D. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Channel+Length+Scaling+of+MoS2+MOSFETs.">Channel Length Scaling of MoS2 MOSFETs.</a> ACS Nano. 6, 8563-8569 (2012).</li><li>Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., Strano, M. S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Electronics+and+optoelectronics+of+two-dimensional+transition+metal+dichalcogenides.">Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.</a> Nat. Nanotechnol. 7, 699-712 (2012).</li><li>Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., Kis, A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Single-layer+MoS2+transistors.">Single-layer MoS2 transistors.</a> Nat. Nanotechnol. 6, 147-150 (2011).</li><li>Lee, Y. H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Synthesis+of+Large-Area+MoS2+Atomic+Layers+with+Chemical+Vapor+Deposition.">Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition.</a> Adv. Mater. 24, 2320-2325 (2012).</li><li>Yu, Y., Li, C., Liu, Y., Su, L., Zhang, Y., Cao, L. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Controlled+Scalable+Synthesis+of+Uniform,+High-Quality+Monolayer+and+Few-layer+MoS2+Films.">Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS2 Films.</a> Sci. Rep. 3, 1866 (2013).</li><li>Ling, X., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Role+of+the+Seeding+Promoter+in+MoS2+Growth+by+Chemical+Vapor+Deposition.">Role of the Seeding Promoter in MoS2 Growth by Chemical Vapor Deposition.</a> Nano Lett. 14, 464-472 (2014).</li><li>Lee, Y., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Synthesis+of+wafer-scale+uniform+molybdenum+disulfide+films+with+control+over+the+layer+number+using+a+gas+phase+sulfur+precursor.">Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor.</a> Nanoscale. 6, 2821-2826 (2014).</li><li>Lin, M. Y., Su, C. F., Lee, S. C., Lin, S. Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=The+Growth+Mechanisms+of+Graphene+Directly+on+Sapphire+Substrates+using+the+Chemical+Vapor+Deposition.">The Growth Mechanisms of Graphene Directly on Sapphire Substrates using the Chemical Vapor Deposition.</a> J. Appl. Phys. 115, 223510 (2014).</li><li>Wu, C. R., Chang, X. R., Chang, S. W., Chang, C. E., Wu, C. H., Lin, S. Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Multilayer+MoS2+prepared+by+one-time+and+repeated+chemical+vapor+depositions:+anomalous+Raman+shifts+and+transistors+with+high+ON/OFF+ratio.">Multilayer MoS2 prepared by one-time and repeated chemical vapor depositions: anomalous Raman shifts and transistors with high ON/OFF ratio.</a> J. Phys. D Appl. Phys. 48, 435101 (2015).</li><li>Li, M. Y., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Epitaxial+growth+of+a+monolayer+WSe2-MoS2+lateral+p-n+junction+with+an+atomically+sharp+interface.">Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface.</a> Science. 349, 524-528 (2015).</li><li>Zhan, Y., Liu, Z., Najmaei, S., Ajayan, M. P., Lou, J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Large-area+vapor-phase+growth+and+characterization+of+MoS2+atomic+layers+on+a+SiO2+substrate.">Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate.</a> Small. 8, 966 (2012).</li><li>Woods, J. M., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=One-Step+Synthesis+of+MoS2/WS2+Layered+Heterostructures+and+Catalytic+Activity+of+Defective+Transition+Metal+Dichalcogenide+Films.">One-Step Synthesis of MoS2/WS2 Layered Heterostructures and Catalytic Activity of Defective Transition Metal Dichalcogenide Films.</a> ACS Nano. 10, 2004-2009 (2016).</li><li>Wu, C. R., Chang, X. R., Wu, C. H., Lin, S. Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=The+Growth+Mechanism+of+Transition+Metal+Dichalcogenides+using+Sulfurization+of+Pre-deposited+Transition+Metals+and+the+2D+Crystal+Hetero-structure+Establishment.">The Growth Mechanism of Transition Metal Dichalcogenides using Sulfurization of Pre-deposited Transition Metals and the 2D Crystal Hetero-structure Establishment.</a> Sci. Rep. 7, 42146 (2017).</li><li>Chen, K. C., Chu, T. W., Wu, C. R., Lee, S. C., Lin, S. Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Layer+Number+Controllability+of+Transition-metal+Dichalcogenides+and+The+Establishment+of+Hetero-structures+using+Sulfurization+of+Thin+Transition+Metal+Films.">Layer Number Controllability of Transition-metal Dichalcogenides and The Establishment of Hetero-structures using Sulfurization of Thin Transition Metal Films.</a> J. of Phys. D: Appl. Phy. 50, 064001 (2017).</li><li>Wu, C. R., Chang, X. R., Chu, T. W., Chen, H. A., Wu, C. H., Lin, S. Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Establishment+of+2D+Crystal+Heterostructures+by+Sulfurization+of+Sequential+Transition+Metal+Depositions:+Preparation,+Characterization,+and+Selective+Growth.">Establishment of 2D Crystal Heterostructures by Sulfurization of Sequential Transition Metal Depositions: Preparation, Characterization, and Selective Growth.</a> Nano Lett. 16, 7093-7097 (2016).</li><li>Lin, M. Y., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Toward+epitaxially+grown+two-dimensional+crystal+hetero-structures:+Single+and+double+MoS2/graphene+hetero-structures+by+chemical+vapor+depositions.">Toward epitaxially grown two-dimensional crystal hetero-structures: Single and double MoS2/graphene hetero-structures by chemical vapor depositions.</a> Appl. Phys. Lett. 105, 073501 (2014).</li><li>Lee, C., Yan, H., Brus, L. E., Heinz, T. F., Hone, J., Ryu, S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Anomalous+Lattice+Vibrations+of+Single+and+Few-Layer+MoS2.">Anomalous Lattice Vibrations of Single and Few-Layer MoS2.</a> ACS Nano. 4, 2695-2700 (2010).</li><li>Chen, K. C., Chu, T. W., Wu, C. R., Lee, S. C., Lin, S. Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Atomic+Layer+Etchings+of+Transition+Metal+Dichalcogenides+with+Post+Healing+Procedures:+Equivalent+Selective+Etching+of+2D+Crystal+Hetero-structures.">Atomic Layer Etchings of Transition Metal Dichalcogenides with Post Healing Procedures: Equivalent Selective Etching of 2D Crystal Hetero-structures.</a> 2D Mater. 4, 034001 (2017).</li></ol>

与传统的半导体材料如 Si 和 GaAs 相比, 2D 材料在器件应用中的优势在于有可能将极薄的物体分解成几个原子层。当 si 产业进入 < 10 纳米技术节点时, si 散热 FET 的高长宽比将使器件结构不适合实际应用。因此, 2D 的材料已经出现, 因为它们有可能取代 Si 的电子器件应用。
虽然最研究的2D 材料, 石墨烯, 预计将表现出高的流动性值, 其零带隙性质已导致没有关闭状态的石墨烯晶体?...

获取2D 晶体薄膜的最常见方法之一是使用散装材料的机械剥离1,2,3,4,5。虽然采用这种方法可以很容易地获得高结晶质量的2D 晶体薄膜, 但这一方法不能获得可伸缩的2D 晶体薄膜, 这对实际应用是不利的。在以前的出版物中已经表明, 使用化学气相沉积 (CVD), 大面积和均匀的2D 晶体薄膜可以准备6,7,8,9。利用 CVD 生长技术10、11, 还演示了通过重复相同的生长周期制备的石墨烯基底和层数可控 MoS2薄膜的直接生长。在最近的一份出版物中, 在平面 WSe2/MoS2杂化结构薄片中也使用 CVD 生长技术12进行制作。尽管 CVD 生长技术有望提供可伸缩的2D 晶体薄膜, 但这种生长技术的主要缺点是不同的前体必须位于不同的2D 晶体中。不同的2D 晶体的生长条件也不尽相同。在这种情况下, 当需求增长2D 晶体异质结构时, 生长过程将变得更加复杂。
与 CVD 生长技术相比, pre-deposited 过渡金属薄膜的硫化为 TMDs1314提供了类似但更简单的增长方法。由于生长过程只涉及金属沉积和以下硫化程序, 有可能通过相同的生长过程生长不同的 TMDs。另一方面, 2D 晶体的层数可控性也可以通过改变 pre-deposited 过渡金属厚度来实现。在这种情况下, 对于不同的 TMDs, 需要将增长优化和层数控制降低到单个层. 利用这种方法, 了解生长机制对复杂 TMD 杂化结构的建立也非常重要。
在本文中, MoS2和 WS2薄膜是在类似的金属沉积生长过程中制备的, 其次是硫化程序。在硫充分和缺陷条件下, 通过硫化钼薄膜的研究得到的结果, 在硫化过程中观察到两种生长机制15。在硫充分条件下, 可在硫化过程后获得均匀、层数可控的 MoS2膜。当样品在硫亏缺条件下硫化时, 背景硫不足以形成完整的 MoS2膜, 从而使钼氧化物的分离和聚结成为早期生长阶段的主要机制。在硫化过程15之后, 将获得由少量 MoS2层覆盖的 Mo 氧化物簇的样品。通过顺序金属沉积和以下硫化程序, WS2/MoS2垂直异质结构的层数可控性下到一个单一的层可以准备15,16。利用该技术, 在四区域的蓝宝石衬底上获得了样品: (I) 空白蓝宝石衬底, (II) 独立 MoS2, (III) ws2/mos2异质结构, (IV) 独立 ws217.结果表明, 生长技术有利于垂直2D 晶体杂化结构的建立, 具有选择性生长能力。2D 晶体异质结构的增强装置性能将标志着2D 晶体实际应用的第一步。

<table>
	<tbody>
		<tr>
			<td>RF sputtering system</td>
			<td>Kao Duen Technology</td>
			<td>N/A</td>
			<td></td>
		</tr>
		<tr>
			<td>Furnace for sulfurization</td>
			<td>Creating Nano Technologies</td>
			<td>N/A</td>
			<td></td>
		</tr>
		<tr>
			<td>Polymethyl methacrylate (PMMA)</td>
			<td>Microchem</td>
			<td>8110788</td>
			<td>Flammable</td>
		</tr>
		<tr>
			<td>KOH, &#62; 85%</td>
			<td>Sigma-Aldrich</td>
			<td>30603</td>
			<td></td>
		</tr>
		<tr>
			<td>Acetone, 99.5%</td>
			<td>Echo Chemical</td>
			<td>CMOS110</td>
			<td></td>
		</tr>
		<tr>
			<td>Sulfur (S), 99.5%</td>
			<td>Sigma-Aldrich</td>
			<td>13803</td>
			<td></td>
		</tr>
		<tr>
			<td>Molybdenum (Mo), 99.95%</td>
			<td>Summit-Tech</td>
			<td>N/A</td>
			<td></td>
		</tr>
		<tr>
			<td>Tungsten (W), 99.95%</td>
			<td>Summit-Tech</td>
			<td>N/A</td>
			<td></td>
		</tr>
		<tr>
			<td>C-plane Sapphire substrate</td>
			<td>Summit-Tech</td>
			<td>X171999</td>
			<td>(0001) &#177; 0.2 &#176; one side polished</td>
		</tr>
		<tr>
			<td>300 nm SiO2/Si substrate</td>
			<td>Summit-Tech</td>
			<td>2YCDDM</td>
			<td>P-type Si substrate, resistivity: 1-10 &#937; &#183; cm.</td>
		</tr>
		<tr>
			<td>Sample holder (sputtering system)</td>
			<td>Kao Duen Technology</td>
			<td>N/A</td>
			<td>Ceramic material</td>
		</tr>
		<tr>
			<td>Mechanical pump (sputtering system)</td>
			<td>Ulvac</td>
			<td>D-330DK</td>
			<td></td>
		</tr>
		<tr>
			<td>Diffusion pump (sputtering system)</td>
			<td>Ulvac</td>
			<td>ULK-06A</td>
			<td></td>
		</tr>
		<tr>
			<td>Mass flow controller</td>
			<td>Brooks</td>
			<td>5850E</td>
			<td>The maximum Argon flow is 400 mL/min</td>
		</tr>
		<tr>
			<td>Manual wheel Angle poppet valve</td>
			<td>King Lai</td>
			<td>N/A</td>
			<td>Vacuum range from 2500 ~1 &#215; 10-8 torr</td>
		</tr>
		<tr>
			<td>Raman measurement system</td>
			<td>Horiba</td>
			<td>Jobin Yvon LabRAM HR800</td>
			<td></td>
		</tr>
		<tr>
			<td>Transmission electron microscopy</td>
			<td>Fei</td>
			<td>Tecnai G2 F20</td>
			<td></td>
		</tr>
		<tr>
			<td>Petri dish</td>
			<td>Kwo Yi</td>
			<td>N/A</td>
			<td></td>
		</tr>
		<tr>
			<td>Tweezer</td>
			<td>Venus</td>
			<td>2A</td>
			<td></td>
		</tr>
		<tr>
			<td>Digital dry cabinet</td>
			<td>Jwo Ruey Technical</td>
			<td>DRY-60</td>
			<td></td>
		</tr>
		<tr>
			<td>Dual-channel system sourcemeter</td>
			<td>Keithley</td>
			<td>2636B</td>
			<td></td>
		</tr>
	</tbody>
</table>

preparation of large-area vertical 2d crystal hetero-structures through the sulfurization of transition metal films for device fabrication

我们已经证明, 通过硫化过渡金属薄膜, 如钼 (钼) 和钨 (W), 大面积和均匀过渡金属 dichalcogenides (TMDs) MoS2和 WS2可以在蓝宝石衬底上制备。通过控制金属膜厚度, 可以利用这种生长技术获得良好的层数可控性, 降低到单层 TMDs。根据在硫缺乏条件下钼膜硫化的结果, 在硫化过程中, (a) 平面 MoS2生长和 (b) 钼氧化物的分离有两种机制。当背景硫充足时, 平面 TMD 的生长是主要的生长机制, 在硫化过程后会产生均匀的 MoS2膜。如果背景硫缺乏, 在硫化过程的初始阶段, 钼氧化物的分离将成为主要的生长机制。在这种情况下, 将获得覆盖有少量层 MoS2的 Mo 氧化物簇的样品。在连续 Mo 沉积/硫化和 W 沉积/硫化过程之后, 使用这种生长技术建立了垂直 WS2/MoS2杂化结构。分别对应于 WS2和 MoS2的拉曼峰值, 以及与单个2D 材料求和的异质结构的相同层数, 证实了垂直2D 晶体的成功建立异质结构。在将 WS2/MoS2胶片传输到带 pre-patterned 源/漏极的微晶2/Si 衬底上后, 制作了底栅极晶体管。与仅 mos2通道的晶体管相比, 具有 WS2/mos2异质结构的设备的更高的漏电流显示出, 随着2D 晶体异质结构的引入, 高级器件可以获得性能。研究结果揭示了这种生长技术在2D 晶体实际应用中的潜力。

分别在图 1ab17中显示了使用 pre-deposited 过渡金属硫化制作的单个 MoS2和 WS2的拉曼光谱和横截面 HRTEM 图像。对 MoS2和 WS2的两个特征拉曼峰值分别进行了观测, 它对应于平面内的和2D 晶体中的一个<img alt="Equation 1" src="/files/ftp_upload/56494/56494eq1.jpg"> 1g声子振动模式。mos2样本的?...

Watch this Scientific Journal Video about Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication at JoVE.com

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

通过 pre-deposited 过渡金属的硫化, 可以制备大面积和垂直2D 晶体杂化结构。本报告还演示了薄膜传输和器件制作程序。

硫化过渡金属膜制备大面积垂直2D 晶体杂化结构

We have demonstrated that through the sulfurization of transition metal films such as molybdenum (Mo) and tungsten (W), large-area and uniform transition ...

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光子晶体慢光波导和腔体的制备与表征

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Fabrication of 1-D Photonic Crystal Cavity on a Nanofiber Using Femtosecond Laser-induced Ablation

1-D光子晶体空穴对纳米纤维使用飞秒激光诱导消融制造

We present a protocol for fabricating 1-D Photonic Crystal (PhC) cavities on subwavelength-diameter tapered optical fibers, optical nanofibers, using ...

Orientational Transition in a Liquid Crystal Triggered by the Thermodynamic Growth of Interfacial Wetting Sheets

由界面润湿片的热力学生长触发的液晶中的定向转变

In liquid crystal (LC) physical chemistry, molecules near the surface play a great role in controlling bulk orientation. Thus far, mainly to achieve ...

Preparation of Liquid Crystal Networks for Macroscopic Oscillatory Motion Induced by Light

光诱导的宏观振荡运动液晶网络的制备

A strategy based on doped liquid crystalline networks is described to create mechanical self-sustained oscillations of plastic films under continuous ...

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

大型单层矩形 SnSe 片的常压制备

Tin selenide (SnSe) belongs to the family of layered metal chalcogenide materials with a buckled structure like phosphorene, and has shown potential for ...

Fabrication of Superhydrophobic Metal Surfaces for Anti-Icing Applications

防结冰用超疏水性金属表面的制备

Several ways to produce superhydrophobic metal surfaces are presented in this work. Aluminum was chosen as the metal substrate due to its wide use in ...

Fused Filament Fabrication (FFF) of Metal-Ceramic Components

Fused Filament Fabrication FFF of Metal-Ceramic Components

金属陶瓷元件的熔融长丝制造 (fff)

Technical ceramics are widely used for industrial and research applications, as well as for consumer goods. Today, the demand for complex geometries with ...

Radio Frequency Magnetron Sputtering of GdBa2Cu3O7&#8722;&#948;/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 (STO) Single-crystal Substrates

Radio Frequency Magnetron Sputtering of GdBa2Cu3O7ÃƒÆ’Ã‚Â¢Ãƒâ€¹Ã¢â‚¬Â 'ÃƒÆ’Ã…Â½Ãƒâ€šÃ‚Â´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates

Gdba2cu 3 o7 的射频磁控管散射-/la0.67sr 0.67 mno 3 准双层薄膜上的 srtio 3 (sto) 单晶基板上

Here, we demonstrate a method of coating ferromagnetic La0.67Sr0.33MnO3 (LSMO) nanoparticles on (001) SrTiO3 (STO) single-crystal substrates by radio ...