Name: fabrication of flexible image sensor based on lateral nipin phototransistors
Uploaded: 2018-06-23T14:00:00
Description: Watch this Scientific Journal Video about Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors at JoVE.com

这项研究得到了由科学和信息和通信技术部 (NRF-2017M3D1A1039288) 资助的韩国国家研究基金会 (NRF) 的创造性材料发现计划的支持。此外, 这项研究得到了由韩国政府资助的信息和通信技术促进 (IITP) 赠款研究所 (MSIP) 的支持 (2017000709 号, 物理仿制加密基元的综合方法, 使用随机激光器和光电子)。

注意: 本议定书中使用的一些化学物质 (如, 氢氟酸, 缓冲氧化物蚀刻, 异丙醇等) 可能危害健康。在样品准备发生之前, 请查阅所有相关的材料安全数据表。使用适当的个人防护设备 (如, 实验室大衣, 安全眼镜, 手套) 和工程控制 (如, 湿站, 油烟机) 处理腐蚀剂和溶剂。
1. Si 掺杂和分离
注: 见图 1a - 1d</stro...

<ol>
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这里描述的制造技术对先进的电子产品和可穿戴设备的进步大有帮助。这种方法的基本概念是使用薄硅膜和金属联网装置能够拉伸。虽然 si 是一种脆性和坚硬的材料, 可以很容易地破裂, 一个非常薄的 Si 层可以得到一个灵活性26,27。在金属联网电缆的情况下, 波形形状提供拉伸和灵活性28,29。特别是, 金属联网?...

生物启发成像系统可以提供许多优势相比, 传统的成像系统1,2,3,4,5。视网膜或半球 ommatidia 是生物视觉系统的一个坚固组分1,2,6。一个曲线图像传感器, 模仿动物眼睛的关键元素, 可以提供一个紧凑和简单的配置光学系统低畸变7。制造技术和材料的不同的进步, 例如, 使用本质软材料例如有机物或纳米材料8,9,10,11,12 、将可变形结构引入半导体, 包括硅 (Si) 和锗 (Ge)1、2、3、13、14、 15、16、17, 实现了曲线图像传感器。其中, Si 为基础的方法提供了固有的优势, 如丰富的材料, 成熟的技术, 稳定性和光/电优势。因此, 虽然 si 具有内在的刚性和脆性, si 基柔性电子已被广泛研究的各种应用, 如柔性光电子18,19,20包括曲线图像传感器1,2,3, 甚至可穿戴医疗保健设备21,22。
在最近的一项研究中, 我们分析和改进了薄硅光电探测器阵列23的电学性能。在该研究中, 曲线光电探测器阵列的最佳单单元单元是由光电二极管和阻挡二极管组成的三极管 (PTR) 类型。基结增益放大了产生的光电流, 因此它展示了一种通过薄膜结构改善电性能的途径。除了单细胞外, 薄膜结构还适用于抑制暗电流, 这在光电探测器中被认为是噪声。对于掺杂浓度, 大于 1015厘米-3的浓度足以达到一个特殊的性能, 其中二极管的特性可以保持与光强度超过 10-3瓦特/厘米2 23.而且, 与光电二极管相比, PTR 单胞具有低柱噪声和光学/电稳定性能。根据这些设计规则, 我们制作了一个灵活的光电探测器阵列, 由薄 Si PTRs 使用的硅绝缘体 (SOI) 晶片组成。在一般情况下, 柔性图像传感器的一个重要设计规则是中性机械平面概念, 它定义了一个任意小 r24的应变为零的结构的厚度位置。另一个关键点是一个蛇形几何的电极, 因为波形形状提供完全可逆的拉伸电极。由于这两个重要的设计概念, 光电探测器阵列可以灵活和可伸缩。它促进光电探测器阵列的3D 变形成半球状或像动物眼视网膜2的弯曲形状。
在这项工作中, 我们详细介绍了用半导体制造工艺 (如掺杂、蚀刻、沉积) 和转移印花制作弯曲 PTR 阵列的过程。此外, 我们的特点是一个单一的 PTR, 在一 V 曲线。除了制备方法和单个细胞分析外, 还分析了在形变状态下 PTR 阵列的电学特性。

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			<td height="21" style="height:21px;width:216px;">&#160;SF-100ND</td>
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			<td>Polydimethylsiloxane elastomer</td>
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			<td style="width:129px;">2919</td>
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fabrication of flexible image sensor based on lateral nipin phototransistors

柔性探测器已被强烈地研究为使用曲线图像传感器, 这是一个关键组成部分的生物启发成像系统, 但几个挑战点仍然存在, 如低吸收效率由于薄的活性层和低灵活性。我们提出了一个先进的方法来制造一个灵活的三极管阵列与改进的电气性能。由于深杂质掺杂, 突出的电气性能由低暗电流驱动。可伸缩和灵活的金属联网装置同时提供高变形状态的电气和机械稳定性。该协议明确描述了三极管使用薄硅膜的制作过程。通过测量变形状态下已完成器件的三极管特性, 证明了该方法提高了阵列的机械和电气稳定性。我们预计, 这种灵活的三极管的方法可以广泛应用于下一代成像系统/光电子, 而且还可穿戴的设备, 如触觉/压力/温度传感器和健康监测器。

图 3a和3b显示了 NIPIN PTR 的设计和制造结构, 考虑到以前的研究2,23。图 3a中的插图展示了 PTR 的基本的 I V 特征。PTR 的详细结构参数如图 3b所示。利用 NNFC 离子注入技术, 对 SOI 晶片上的 Si 层进行掺杂处理。掺杂深度为1.25 µm, 等于 Si 层厚度, n+</sup...

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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

基于侧向 NIPIN Phototransistors 的柔性图像传感器的研制

本文提出了一种用于曲面图像传感器的可变形侧向 NIPIN 三极管阵列的详细方法。三极管阵列具有开放的网状形式, 由薄硅岛和可伸缩金属联网装置组成, 提供了灵活性和拉伸。参数分析仪的特点是制造三极管的电学性能。

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, ...

Research

JoVE Journal

Engineering

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科研

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