Name: a standard and reliable method to fabricate two-dimensional nanoelectronics
Uploaded: 2018-08-28T13:00:00
Description: Watch this Scientific Journal Video about A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics at JoVE.com

这项工作得到了台湾国家科学委员会的支持。最多105-2112 米-003-016 MY3。这项工作还部分由国家纳米设备实验室和国立台湾大学电气工程电子梁实验室支持。

1. 2D 准异质结晶体管制造工艺
<ol><li>准备商业 c 平面蓝宝石。<ol>
<li>用丙酮清洗全单面抛光蓝宝石 (2 英寸)。</li>
		<li>用异丙醇冲洗蓝宝石基底。</li>
	</ol></li>
	<li>在热壁炉中使用 CVD, 在蓝宝石基底上生长 MoS2 。<ol>
<li>将0.6 克三氧化钼 (MoO3) 粉放在位于炉膛加热区中心的石英船上。将蓝宝石衬底置于含有 MoO3粉末的石英船旁边。</li>
		<li>在炉子上游的另一只石英船上制备?...

<ol>
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本文介绍了基于纳米尺度的2D 材料制作新型电子产品的具体程序。由于每种应用的样品制备程序有差异, 重叠过程被视为协议。电子束模式结合材料定位确定和金属电极的定义, 因此在这里充当协议。在上述两种类型的器件中, 提出了从湿式转移单晶 MoS2薄膜到2/硅基片上的2D 后门控晶体管的全过程, 以及在金属升降时的结束。在2D 后门控晶体管上给出焦点的原因是改进的2D 材料基场...

自过去几十年以来, 人类经历了晶体管大小的快速缩小, 因此, 集成电路 (ICs) 中晶体管的数量呈指数上升。这保持了硅基互补金属氧化物半导体 (CMOS) 技术1的持续发展。此外, 这一目前的规模和性能的制造设备仍在轨道上的摩尔定律, 其中指出, 电子芯片上的晶体管数量, 以及其性能, 大约每两年2倍。CMOS 晶体管是存在于大多数, 即使不是全部, 电子设备在市场上可用, 从而使它成为人类生活的一个组成部分。由于这一点, 不断的需求, 以改善芯片的规模和性能, 一直推动制造商遵循摩尔的法律轨道。
不幸的是, 摩尔定律似乎快要结束了, 因为更多的硅电路被压缩到一个小面积2的时候产生的热量。这就要求新类型的材料可以提供与硅相同的性能, 如果不是更好, 则可以在相对较小的范围内实现。近年来, 新材料已成为许多材料科学研究的主题。此类材料为一维 (1D) 碳纳米管3、4、5、6、7、2D 石墨烯8、9、10、11,12、过渡金属 dichalcogenides (TMDs)13、14、15、16、17、18, 是优秀的候选者, 可作为替代硅基 CMOS, 并继续摩尔的法律轨道。
制作小规模设备需要仔细确定材料的位置, 以成功地进行其他制造技术, 如光刻和金属电极的定义。因此, 本文提出的方法是为了满足这一需要而设计的。与传统的半导体制造技术19相比, 本文提出的方法适合于小尺寸器件的开发, 在寻找材料的位置方面需要更多的关注。该方法的目的是可靠地制造2D 纳米材料器件, 如2D 后门控晶体管和 Q 双, 使用标准制造工艺。这可以成为未来 nanodevice 发展的平台, 因为它为未来先进的纳米级器件的生产铺平了道路。
在程序部分, 详细讨论了2D 材料基器件的制造工艺, 即 Q HBT 和2D 后置门式晶体管。电子束模式结合材料定位确定和金属电极定义包括该协议, 因为它们在上述两个过程中都是必需的。第1部分讨论了 Q-双20的分步制作过程;和2部分展示了一种普遍的方法, 获得化学气相沉积 (CVD) 二硫化钼 (MoS2) 后门控晶体管从转移到推力21, 这已经完全显示在本文中。详细的流程流程如下所示 (图 1)。

<table border="0" cellpadding="0" cellspacing="0" style="width:973px;" width="973">
	<tbody>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">E-gun Evaporator</td>
			<td style="width:175px;">AST</td>
			<td style="width:255px;">PEVA 600I</td>
			<td style="width:296px;"></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Au slug, 99.99%</td>
			<td>Well-Being Enterprise Co</td>
			<td>&#160;N/A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Ti slug, 99.99%</td>
			<td>Well-Being Enterprise Co</td>
			<td>&#160;N/A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">E-beam Lithography System</td>
			<td style="width:175px;">Elionix</td>
			<td style="width:255px;">ELS7500-EX</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Cold Wall CVD System</td>
			<td style="width:175px;">Sulfur Science</td>
			<td style="width:255px;">SCW600S</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">C-plane Sapphire substrate</td>
			<td style="width:175px;">Summit-Tech</td>
			<td style="width:255px;">X171999</td>
			<td>(0001) &#177; 0.2 &#176; one side polished</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">100 nm SiO2/Si</td>
			<td style="width:175px;"></td>
			<td style="width:255px;"></td>
			<td>Fabricated in NDL</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Ammonia Solution</td>
			<td style="width:175px;">BASF</td>
			<td style="width:255px;">Ammonia Solution 28% Selectipur</td>
			<td style="width:296px;"></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Molybdenum (Mo), 99.95%</td>
			<td style="width:175px;">Summit-Tech&#160;</td>
			<td style="width:255px;">N/A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Tungsten (W), 99.95%</td>
			<td style="width:175px;">Summit-Tech&#160;</td>
			<td style="width:255px;">N/A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Sulfur (S), 99.5%</td>
			<td style="width:175px;">Sigma-Aldrich&#160;</td>
			<td style="width:255px;">13803</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Polymethyl Methacrylate (PMMA)</td>
			<td style="width:175px;">Microchem&#160;</td>
			<td style="width:255px;">8110788</td>
			<td>Use for transfer process</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Spin Coater</td>
			<td>Laurell&#160;</td>
			<td>WS 400B 6NPP LITE</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Acetone</td>
			<td style="width:175px;">BASF</td>
			<td style="width:255px;">Acetone EL Selectipur</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Isopropanol (IPA)</td>
			<td style="width:175px;">BASF</td>
			<td style="width:255px;">2-Propanol UPS</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Photo Resist for EBL</td>
			<td style="width:175px;">TOK</td>
			<td style="width:255px;">TDUR-P-015</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Plasma Cleaner</td>
			<td style="width:175px;">Harrick Plasma</td>
			<td style="width:255px;">PDC-32G</td>
			<td>Oxygen plasma</td>
		</tr>
	</tbody>
</table>

a standard and reliable method to fabricate two-dimensional nanoelectronics

二维 (2D) 材料由于其独特的性能和潜在的应用, 引起了人们的极大关注。由于2D 材料的硅片规模合成尚处于起步阶段, 科学家们不能完全依靠传统的半导体技术进行相关研究。微妙的过程从定位材料到电极的定义需要很好的控制。本文介绍了制造纳米电子所需的通用制造协议, 如2D 准异质结双极晶体管 (Q HBT) 和2D 后向门控晶体管。该协议包括材料位置的确定, 电子束光刻 (EBL), 金属电极的定义,等等。文中还介绍了这些装置的制作过程的逐步叙述。结果表明, 所研制的器件均具有较高的重复性和高的性能。这项工作揭示了制备2D 纳米电子的流程流程的全面描述, 使研究小组能够访问这些信息, 并为未来的电子学铺平道路。

该装置的制造工艺已应用于相应的作者研究, 涉及2D 材料器件的开发。在这一部分中, 本文给出的一些研究结果表明了上述协议的有效性。以2-MoS2 Q HBT20为例, 选取了一层侧向 WSe。使用协议中详细介绍的标准设备制造过程, heterojunctions 了单层侧向 WSe2-MoS2 (图 2a), 然后由 Q HBT 的形成进行。金属接触沉积?...

Watch this Scientific Journal Video about A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics at JoVE.com

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

超导二维电子气体平台上的可扩展量子集成电路

To form a coherent quantum transport in hybrid superconductor-semiconductor (S-Sm) junctions, the formation of a homogeneous and barrier-free interface ...