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DOI :
10.3791/58272-v
•
10:25 min
September 14th, 2018
Chapters
0:04
Title
1:03
Sample Preparation for Resist Coating
2:27
Load Sample in STEM, Map Window Coordinates, and Perform High-Resolution Focusing
4:54
Expose Patterns Using an Aberration-Corrected STEM Equipped with a Pattern Generator System
6:44
Resist Development and Critical Point Drying
8:09
Results: Nanometer-Scale Lithographic Patterns in HSQ and PMMA (Positive and Negative Tone)
9:14
Conclusion
我们使用一个畸变校正扫描透射电子显微镜来定义两个广泛使用的电子束抵抗的单数字纳米模式: 聚甲基丙烯酸甲酯和氢 silsesquioxane。通过发射、等离子蚀刻和 organometallics 的抗渗, 可以将抗性模式复制到单位纳米保真度选择的目标材料中。
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