Research
Education
Sign In
EN
EN - English
CN - 中文
DE - Deutsch
ES - Español
KR - 한국어
IT - Italiano
FR - Français
PT - Português
Please note that all translations are automatically generated. Click here for the English version.
DOI :
10.3791/58897-v
July 17th, 2020
Chapters
0:04
Introduction
0:34
Experimental Verification Procedure
4:29
Results: Reduction of Threading Dislocation Density in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
6:12
Conclusion
提出了降低硅上半圆柱空隙的锗外延层螺纹位错(TD)密度的理论计算和实验验证。给出了基于TD与表面相互作用的计算方法,通过像力、TD测量和透射电子显微镜对TD的观测。
Tags
-- Views
Related Videos
Privacy
Terms of Use
Policies
Contact Us
Recommend to library
JoVE NEWSLETTERS
JoVE Journal
Methods Collections
JoVE Encyclopedia of Experiments
Archive
JoVE Core
JoVE Business
JoVE Science Education
JoVE Lab Manual
Faculty Resource Center
Authors
Overview
Publishing Process
Editorial Board
Scope and Policies
Peer Review
FAQ
Submit
Librarians
Testimonials
Subscriptions
Access
Resources
Library Advisory Board
ABOUT JoVE
Leadership
Copyright © 2024 MyJoVE Corporation. All rights reserved