Name: fabrication of robust nanoscale contact between a silver nanowire electrode and cds buffer layer in cu(in,ga)se2 thin-film solar cells
Uploaded: 2019-07-19T14:30:00
Description: Watch this Scientific Journal Video about Fabrication of Robust Nanoscale Contact between a Silver Nanowire Electrode and CdS Buffer Layer in CuIn,GaSe2 Thin-film Solar Cells at JoVE.com

这项研究得到了韩国能源研究所(B9-2411)的内部研发计划(B9-2411)和基础科学研究计划的支持,该计划由韩国国家研究基金会(NRF)资助。教育 (授予 NRF-2016R1D1A1B03934840)。

1. 直流磁控溅射制备莫涂层玻璃
<ol><li>将清洁的玻璃基板装载到直流磁控管中,并泵入 4 x 10-6 Torr 以下。</li>
	<li>输送 Ar 气体,并将工作压力设置为 20 mTorr。</li>
	<li>打开等离子,将直流输出功率增加到 3 kW。</li>
	<li>在目标清洁预溅 3 分钟后,开始 Mo 沉积,直到 Mo 薄膜厚度达到约 350 nm。</li>
	<li>将工作压力设置为 15 mTorr,同时保持相同的输出功率(即 3 kW)。</li>
	<li>恢复 Mo 沉积,直到 Mo 的总厚度?...

<ol>
	<li>Lee, S., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Determination+of+the+lateral+collection+length+of+charge+carriers+for+silver-nanowire-electrode-based+Cu(In,Ga)Se2+thin-film+solar+cells.">Determination of the lateral collection length of charge carriers for silver-nanowire-electrode-based Cu(In,Ga)Se2 thin-film solar cells.</a> Solar Energy. 180, 519-523 (2019).</li><li>Langley, D., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Flexible+transparent+conductive+materials+based+on+silver+nanowire+networks:+a+review.">Flexible transparent conductive materials based on silver nanowire networks: a review.</a> Nanotechnology. 24 (45), 452001 (2013).</li><li>Chung, C. -. H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Silver+nanowire+composite+window+layers+for+fully+solution-deposited+thin-film+photovoltaic+devices.">Silver nanowire composite window layers for fully solution-deposited thin-film photovoltaic devices.</a> Advanced Materials. 24 (40), 5499-5504 (2012).</li><li>Liu, C. -. H., Yu, X. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Silver+nanowire-based+transparent,+flexible,+and+conductive+thin+film.">Silver nanowire-based transparent, flexible, and conductive thin film.</a> Nanoscale Research Letters. 6 (1), (2011).</li><li>Yu, Z., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Highly+flexible+silver+nanowire+electrodes+for+shape-memory+polymer+light-emitting+diodes.">Highly flexible silver nanowire electrodes for shape-memory polymer light-emitting diodes.</a> Advanced Materials. 23 (5), 664-668 (2011).</li><li>Chung, C. -. H., Hong, K. -. H., Lee, D. -. K., Yun, J. H., Yang, Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Ordered+vacancy+compound+formation+by+controlling+element+redistribution+in+molecular-level+precursor+solution+processed+CuInSe2+thin+films.">Ordered vacancy compound formation by controlling element redistribution in molecular-level precursor solution processed CuInSe2 thin films.</a> Chemistry of Materials. 27 (21), 7244-7247 (2015).</li><li>Kim, A., Won, Y., Woo, K., Kim, C. -. H., Moon, J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Highly+transparent+low+resistance+ZnO/Ag+Nanowire/ZnO+composite+electrode+for+thin+film+solar+cells.">Highly transparent low resistance ZnO/Ag Nanowire/ZnO composite electrode for thin film solar cells.</a> ACS Nano. 7 (2), 1081-1091 (2013).</li><li>Singh, M., Jiu, J., Sugahara, T., Suganuma, K. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Thin-film+copper+indium+gallium+selenide+solar+cell+based+on+low-temperature+all-printing+process.">Thin-film copper indium gallium selenide solar cell based on low-temperature all-printing process.</a> ACS Applied Materials and Interfaces. 6 (18), 16297-16303 (2014).</li><li>Kim, A., Won, Y., Woo, K., Jeong, S., Moon, J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=All-solution-processed+indium-free+transparent+composite+electrodes+based+on+Ag+Nanowire+and+Metal+Oxide+for+thin-film+solar+cells.">All-solution-processed indium-free transparent composite electrodes based on Ag Nanowire and Metal Oxide for thin-film solar cells.</a> Advanced Functional Materials. 24 (17), 2462-2471 (2014).</li><li>Shin, D., Kim, T., Ahn, B. T., Han, S. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Solution-processed+Ag+Nanowires+++PEDOT:PSS+hybrid+electrode+for+Cu(In,Ga)Se2+thin-film+solar+cells.">Solution-processed Ag Nanowires + PEDOT:PSS hybrid electrode for Cu(In,Ga)Se2 thin-film solar cells.</a> ACS Applied Materials and Interfaces. 7 (24), 13557-13563 (2015).</li><li>Wang, M., Choy, K. -. L. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=All-nonvacuum-processed+CIGS+solar+cells+using+scalable+Ag+NWs/AZO-based+transparent+electrodes.">All-nonvacuum-processed CIGS solar cells using scalable Ag NWs/AZO-based transparent electrodes.</a> ACS Applied Materials and Interfaces. 8 (26), 16640-16648 (2016).</li><li>Jang, J., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Cu(In,Ga)Se2+thin+film+solar+cells+with+solution+processed+silver+nanowire+composite+window+layers:+buffer/window+junctions+and+their+effects.">Cu(In,Ga)Se2 thin film solar cells with solution processed silver nanowire composite window layers: buffer/window junctions and their effects.</a> Solar Energy Materials and Solar Cells. 170, 60-67 (2017).</li><li>Chung, C. -. H., Bob, B., Song, T. -. B., Yang, Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Current-voltage+characteristics+of+fully+solution+processed+high+performance+CuIn(S,Se)2+solar+cells:+crossover+and+red+kink.">Current-voltage characteristics of fully solution processed high performance CuIn(S,Se)2 solar cells: crossover and red kink.</a> Solar Energy Materials and Solar Cells. 120, 642-646 (2014).</li><li>Lee, S., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Robust+nanoscale+contact+of+silver+nanowire+electrodes+to+semiconductors+to+achieve+high+performance+chalcogenide+thin+film+solar+cells.">Robust nanoscale contact of silver nanowire electrodes to semiconductors to achieve high performance chalcogenide thin film solar cells.</a> Nano Energy. 53, 675-682 (2018).</li></ol>

请注意,必须优化第 2层CdS 层的沉积时间,以实现最佳的单元性能。随着沉积时间的延长,第2CdS层的厚度增加,因此,电气接触将得到改善。然而,第2CdS层的进一步沉积将导致更厚的层,减少光吸收,并且设备效率将下降。我们在第二CdS层的沉积时间为10分钟,实现了最佳的细胞性能,并确定了细胞效率降低,沉积时间延长。
为了评估我们的方法,我们比较?...

银纳米线 (AgNW) 网络作为氧化锡 (ITO) 透明导电薄膜的替代品得到了广泛的研究,因为它在降低加工成本和更好的机械灵活性。因此,经过解决方案处理的 AgNW 网络透明导电电极 (TE) 已应用于 Cu(In、Ga)Se2 (CIGS) 薄膜太阳能电池 1、2、3、4、5,6.溶液加工的AgNW CTCEs通常以嵌入式AgNW或三明治-AgNW结构的形式制成,采用导电基质,如PEDOT:PSS、ITO、ZnO等7、8、9、 10,11矩阵层可以增强 AgNW 网络空白空间中电荷载体的收集。
然而,基质层在CIGS薄膜太阳能电池12、13中的基质层和底层CdS缓冲层之间会产生界面缺陷。界面缺陷通常会导致电流密度-电压 (J-V) 曲线扭结,导致电池中的填充系数 (FF) 低,这不利于太阳能电池的性能。我们之前报告了一种方法,通过有选择地在 AgGW 和 CdS 缓冲层14之间沉积另一个薄 CdS 层(第 2层CdS 层)来解决此问题。附加 CdS 层的加入增强了 AgNW 和 CdS 图层之间的连接中的接触属性。因此,AgNW网络中的载波集合得到了极大的改进,并且提高了信元性能。在本协议中,我们描述了在 CIGS 薄膜太阳能电池中使用第二 CdS 层在 AgNW 网络和 CdS缓冲层之间制造强健电气接触的实验过程。

<table border="0" cellpadding="0" cellspacing="0" style="width:616px;" width="617">
	<tbody>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Mo</td>
			<td style="width:115px;">Materion</td>
			<td style="width:119px;">Purity: 3N5</td>
			<td style="width:167px;">Mo sputtering</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Cu</td>
			<td style="width:115px;">5N Plus</td>
			<td style="width:119px;">Purity: 4N7</td>
			<td>CIGS deposition</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">In</td>
			<td style="width:115px;">5N Plus</td>
			<td style="width:119px;">Purity: 5N</td>
			<td>CIGS deposition</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Ga</td>
			<td style="width:115px;">5N Plus</td>
			<td style="width:119px;">Purity: 5N</td>
			<td>CIGS deposition</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Se</td>
			<td style="width:115px;">5N Plus</td>
			<td style="width:119px;">Purity: 5N</td>
			<td>CIGS deposition</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Ammonium acetate</td>
			<td style="width:115px;">Alfa Aesar</td>
			<td style="width:119px;">11599</td>
			<td>CdS reaction solution</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Ammonium hydroxide</td>
			<td style="width:115px;">Alfa Aesar</td>
			<td style="width:119px;">L13168</td>
			<td>CdS reaction solution</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Cadmium acetate dihydrate</td>
			<td style="width:115px;">Sigma-Aldrich</td>
			<td style="width:119px;">289159</td>
			<td>CdS reaction solution</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Thiourea</td>
			<td style="width:115px;">Sigma-Aldrich</td>
			<td style="width:119px;">T8656</td>
			<td>CdS reaction solution</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Silver Nanowire</td>
			<td style="width:115px;">ACSMaterial</td>
			<td style="width:119px;">AgNW-L30</td>
			<td>AgNW dispersion</td>
		</tr>
	</tbody>
</table>

fabrication of robust nanoscale contact between a silver nanowire electrode and cds buffer layer in cu(in,ga)se2 thin-film solar cells

银纳米线透明电极已作为Cu(In,Ga)Se2薄膜太阳能电池的窗口层。裸银纳米线电极通常会导致电池性能极差。使用中等导电性透明材料(如氧化锡或氧化锌)嵌入或夹层银纳米线可以提高电池性能。但是,溶液处理的基质层会导致透明电极和 CdS 缓冲液之间的大量界面缺陷,最终导致电池性能低下。本手稿描述了如何在 Cu(In,Ga) Se2太阳能电池中制造银纳米线电极与底层 CdS 缓冲层之间的强健电气接触,使用无基质银纳米线透明,实现高电池性能电极。我们采用的方法制造的无基质银纳米线电极证明,银纳米线电极基电池的电荷载体收集能力与具有溅射ZnO:Al/i-ZnO的标准电池的电荷载体收集能力一样好,只要银纳米线和CdS 具有高质量的电气触点。通过在银纳米线表面上沉积一层薄至 10 nm 的额外 CdS 层,实现了高质量的电气接触。

图3显示了CIGS太阳能电池的层结构,其标准ZnO:Al/i-ZnO和(b)AgNW TCE。CIGS的表面形态粗糙,AgNW层与底层CdS缓冲层之间可形成纳米级间隙。如图3A所示,第2层CdS层可以选择性地沉积在纳米尺度的间隙上,以产生稳定的电气接触。有关电气接触的形成以及电气特性和器件性能的增强的详细说明,请参阅参考14。在参考14中也发现了AgNW和C...

Watch this Scientific Journal Video about Fabrication of Robust Nanoscale Contact between a Silver Nanowire Electrode and CdS Buffer Layer in CuIn,GaSe2 Thin-film Solar Cells at JoVE.com

Fabrication of Robust Nanoscale Contact between a Silver Nanowire Electrode and CdS Buffer Layer in CuIn,GaSe2 Thin-film Solar Cells

在本协议中,我们描述了在CIGS薄膜太阳能电池中制造银纳米线网络和CdS缓冲层之间强健纳米级接触的详细实验过程。

在 Cu(In、Ga)Se2薄膜太阳能电池中制造银纳米线电极与 CdS 缓冲层之间的强健纳米级接触

Silver nanowire transparent electrodes have been employed as window layers for Cu(In,Ga)Se2 thin-film solar cells. Bare silver nanowire electrodes ...

银纳米线网络是取代薄膜太阳能电池应用中传统的透明导电氧化物的新兴技术。但是，与底层的电气接触一直是个问题。我们的协议是一种简单的工艺方法，用于增强银纳米线网络与CIGS薄膜太阳能电池中底层CdS缓冲层之间的电接触特性。我们的方法是一个非常简单、可重复且廉价的基于解决方案的流程。它还可与现有的基于解决方案的工艺相媲美，以制造CIGS薄膜太阳能电池。首先，将清洁的玻璃基板装载到直流磁控管中，然后向下泵吹四倍 10 到负六托。流气，将工作压力设置为20毫托雷。打开等离子体，将直流输出功率增加到三千瓦。预先溅出三分钟后进行目标清洁，开始进行摩尔膜沉积，直到摩尔膜厚度达到约350纳米。接下来，将工作压力设置为 15 毫托雷，同时保持 3 千瓦的输出功率。恢复摩尔沉积，直到摩尔度总厚度达到约750纳米。在低于 5 倍 10 至负 6 托的真空下，将涂有涂层的玻璃装入预热共蒸发器中。设置以2.5、1.3和15安德罗姆/秒产生沉积率的钛、氦和氦输液细胞的温度。使用石英晶体微平衡技术检查沉积速率。开始在镀膜玻璃上供应钛、氦和氦，在基底温度为 450 摄氏度时形成一微米厚的钛-氦-前体层。15分钟后，停止钛和氦的供应，将基板温度升高至550摄氏度。接下来，开始向钛-氦前体供应铜，并一直持续到薄膜的铜与钛的组成比达到1.15。停止供应铜，并再次以与第一阶段相同的沉积速率蒸发钛和氦，形成约 2 微米厚的 CIGS 薄膜，铜与钛的成分比为 0.9。将钚沉积速率和基底温度分别保持在15°C/秒和550摄氏度。为了确保完全的反应，在550摄氏度的基底温度下，将沉积的CIGS薄膜在环境氦下退火5分钟。将基板温度降低至450摄氏度的环境氦，然后在基板温度低于250摄氏度时卸载CIGS沉积基板。在250毫升烧杯中，加入去离子水、醋酸镉二水合物、硫化和醋酸铵，在250毫升烧杯中准备硫化镉反应沐浴液。搅拌溶液几分钟，直到均匀。在沐浴液中加入3毫升氢氧化铵，搅拌2分钟。接下来，使用特氟龙样品架将 CIGS 样品放入反应浴液中。将反应浴放入水热浴中，保持在65摄氏度。在沉积过程中以 200 RPM 搅拌反应浴液，使反应持续 20 分钟，在 CIGS 上产生大约 70-80 纳米的硫化镉缓冲层。反应后，从反应浴中去除样品，用脱氧水清洗，用氮气干燥。在120摄氏度的加热炉上将样品在120摄氏度下退去30分钟。通过将 90 毫升乙醇与 1 毫升 20 毫克/毫升乙醇为基础的银纳米线分散体混合，准备 1 毫克每毫升银纳米线分散。将0.2毫升的稀释银纳米线分散到硫化镉CIGS样品上，覆盖整个表面，以1000 RPM旋转样品30秒。之后，旋转涂层银纳米线3次。旋转涂层后，在 120 摄氏度下将样品在预热热板上退火 5 分钟。准备一个新的硫化镉反应沐浴溶液，如前所述。如先前所述，除更改反应时间外，其他部分均沉积硫化镉。现在，通过光学显微镜对硫化镉涂层银纳米线的表面形态进行表征。使用配备太阳能模拟器的电流电压源测量太阳能电池性能。此处显示了CIGS太阳能电池的层结构，在固有氧化锌和银纳米线网络透明传导电极上含有标准的氧化铝掺杂锌。第二层硫化镉层可选择性地沉积在纳米级间隙上，以形成稳定的电气接触。横截面透射电子显微镜图像，沿第二层硫化镉层，沉积在银纳米线网络上的硫化镉CIGS结构，并穿过沉积在银纳米线网络上的第二层硫化镉层，如下所示。第二层硫化镉层均匀沉积在银纳米线表面，并产生芯壳银纳米线结构上的镉层。第二层硫化镉层填补了镉缓冲液和银纳米线层之间的气隙，实现了稳定的电气接触。此处显示了具有裸银纳米线的CIGS薄膜太阳能电池的器件性能，以及芯壳银纳米线透明导电电极上的硫化镉层。由于电气接触不稳定，带裸银纳米线的电池设备性能较差。第二层镉层的沉积大大提高了细胞性能。我们协议中最重要的一步是在银纳米线网络上制造第二个CdS层。通过测量CIGS薄膜太阳能电池的设备性能，可以优化发散时间。我们建议在CIGS系统中制造一种坚固的纳米级电接触的方法。我们相信，我们的方法可以应用于其他太阳能电池系统，这需要增强电接触特性。

Research

JoVE Journal

Engineering

Fabrication of Robust Nanoscale Contact between a Silver Nanowire Electrode and CdS Buffer Layer in Cu(In,Ga)Se2 Thin-film Solar Cells

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

多晶硅薄膜太阳能电池电浆增强光捕获

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To ...

科研

工程学

Probing and Mapping Electrode Surfaces in Solid Oxide Fuel Cells

在固体氧化物燃料电池电极表面的探测和测绘

Solid oxide fuel cells (SOFCs) are potentially the most efficient and cost-effective solution to utilization of a wide variety of fuels beyond hydrogen ...

Nanomoulding of Functional Materials, a Versatile Complementary Pattern Replication Method to Nanoimprinting

Nanomoulding功能材料，灵活的互补模式的复制方法，以奈米

We describe a nanomoulding technique which  allows low-cost nanoscale patterning of functional materials, materials stacks  and full devices. Nanomoulding ...

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries

原子探针层析成像研究在Cu（铟，镓）硒<sub&gt; 2</sub&gt;晶界

Compared with the existent techniques, atom probe tomography is a unique technique able to chemically characterize the internal interfaces at the ...

Analysis of Contact Interfaces for Single GaN Nanowire Devices

单氮化镓纳米线设备分析接触界面

Single GaN nanowire (NW) devices fabricated on SiO2 can exhibit  a strong degradation after annealing due to the  occurrence of void formation at the ...

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

通过硅直接晶圆粘接制造均匀纳米级腔

Measurements of the heat capacity and superfluid fraction of confined 4He have been performed near the lambda transition using lithographically patterned ...

Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition

通过热蒸发和原子层沉积使记录效率的SnS太阳能电池

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent ...

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

欧姆接触制造用聚焦离子束技术和电气特性的半导体层的纳米结构

Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor ...

Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing

灯光诱杀银纳米结构通过转移印花在氢化微晶硅太阳能电池集成

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly ...

A Fabrication Method for Highly Stretchable Conductors with Silver Nanowires

对于高伸缩的导线与银纳米线制作方法

Stretchable electronics are identified as a key technology for electronic applications in the next generation. One of the challenges in fabrication of ...