Name: in situ transmission electron microscopy with biasing and fabrication of asymmetric crossbars based on mixed-phased a-vox
Uploaded: 2020-05-13T13:00:00
Description: Watch this Scientific Journal Video about In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx at JoVE.com

这项工作部分在澳大利亚国家制造设施维多利亚节点RMIT大学的微纳米研究设施进行。作者承认这些设施以及RMIT大学显微镜、微分析设施的科技援助，该设施是澳大利亚显微镜的一个联合实验室。澳大利亚政府澳大利亚研究生奖（APA）/研究培训计划（RTP）计划的奖学金支持得到认可。我们感谢马杜·巴斯卡兰教授、苏米特·瓦利亚副教授、马修·菲尔德博士和布伦顿·库克先生的指导和有益的讨论。

1. 制造工艺和电气特征
<ol><li>使用标准图像反转光刻9 来用以下参数对设备的光电逆器进行底部电极（BE 层 1）的图案：<ol>
<li>旋转涂层的光电图在3000 rpm，软烤它在90°C为60s，暴露与25 mJ/cm2 与405 nm激光，在120°C烘烤120s，执行洪水暴露与21mW/cm2 和400nm激光，开发使用开发人员，并用去离子水冲洗。</li>
	</ol>
</li>
	<li>将 5 纳米钛 （Ti） 用于粘附，将 15 nm 铂金 （Pt?...

<ol>
	<li>Kozma, R., Pino, R. E., Pazienza, G. E., Kozma, R., Pino, R. E., Pazienza, G. E. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> Advances in Neuromorphic Memristor Science and Applications. , 9-14 (2012).</li><li>Pan, F., Gao, S., Chen, C., Song, C., Zeng, F. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Recent+progress+in+resistive+random+access+memories:+Materials,+switching+mechanisms,+and+performance.">Recent progress in resistive random access memories: Materials, switching mechanisms, and performance.</a> Materials Science and Engineering: R: Reports. 83, 1-59 (2014).</li><li>Zhou, Y., Ramanathan, S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Mott+Memory+and+Neuromorphic+Devices.">Mott Memory and Neuromorphic Devices.</a> Proceedings of the IEEE. 103 (8), 1289-1310 (2015).</li><li>Nirantar, S., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=In+Situ+Nanostructural+Analysis+of+Volatile+Threshold+Switching+and+Non-Volatile+Bipolar+Resistive+Switching+in+Mixed-Phased+a-VOx+Asymmetric+Crossbars.">In Situ Nanostructural Analysis of Volatile Threshold Switching and Non-Volatile Bipolar Resistive Switching in Mixed-Phased a-VOx Asymmetric Crossbars.</a> Advanced Electronic Materials. 5 (12), 1900605 (2019).</li><li>Rupp, J. A., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Different+threshold+and+bipolar+resistive+switching+mechanisms+in+reactively+sputtered+amorphous+undoped+and+Cr-doped+vanadium+oxide+thin+films.">Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films.</a> Journal of Applied Physics. 123 (4), 044502 (2018).</li><li>Ahmed, T., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Inducing+tunable+switching+behavior+in+a+single+memristor.">Inducing tunable switching behavior in a single memristor.</a> Applied Materials Today. 11, 280-290 (2018).</li><li>Nili, H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Nanoscale+Resistive+Switching+in+Amorphous+Perovskite+Oxide+(a-SrTiO3)+Memristors.">Nanoscale Resistive Switching in Amorphous Perovskite Oxide (a-SrTiO3) Memristors.</a> Advanced Functional Materials. 24 (43), 6741-6750 (2014).</li><li>Ahmed, T., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Transparent+amorphous+strontium+titanate+resistive+memories+with+transient+photo-response.">Transparent amorphous strontium titanate resistive memories with transient photo-response.</a> Nanoscale. 9 (38), 14690-14702 (2017).</li><li>Reuhman-Huisken, M. E., Vollenbroek, F. A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=An+optimized+image+reversal+process+for+half-micron+lithography.">An optimized image reversal process for half-micron lithography.</a> Microelectronic Engineering. 11 (1), 575-580 (1990).</li><li>Taha, M., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Insulator-metal+transition+in+substrate-independent+VO2+thin+film+for+phase-change+devices.">Insulator-metal transition in substrate-independent VO2 thin film for phase-change devices.</a> Scientific Reports. 7 (1), 17899 (2017).</li><li>Booth, J. M., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Correlating+the+Energetics+and+Atomic+Motions+of+the+Metal-Insulator+Transition+of+M1+Vanadium+Dioxide.">Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide.</a> Scientific Reports. 6, 26391 (2016).</li><li>Lee, S., Ivanov, I. N., Keum, J. K., Lee, H. N. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Epitaxial+stabilization+and+phase+instability+of+VO2+polymorphs.">Epitaxial stabilization and phase instability of VO2 polymorphs.</a> Scientific Reports. 6, 19621 (2016).</li></ol>

本文解释了使用传输电子显微镜进行原位偏置的方案，包括设备的制造过程、偏置芯片安装的网格杆设计、偏置芯片上的拉梅拉制备和安装，以及具有原位偏置的TEM。
解释了交叉点设备的制造方法，这种方法可以很容易地扩展到横杆结构。氧化铝的 Ti 封盖对于加入非定形氧化铝至关重要，因为它在-VOx沉积后的制造步骤中溶解在水中。设备由两种不同尺?...

电阻变化氧化物记忆由于其兼容的切换速度、更小的细胞结构以及在大容量三维（3D）横杆阵列1中设计的能力，越来越多地被用作新内存和逻辑结构的构建块。迄今为止，已报告了电阻切换设备2、3的多种切换类型。金属氧化物的常见切换行为是单极、双极、互补电阻开关和挥发阈值切换。据报道，单细胞的复杂性增加了，显示多功能电阻开关性能以及4，5，6。
这种变异性意味着需要纳米结构研究来了解不同内存行为的起源和相应的切换机制，以开发明确定义的依赖条件的切换，以达到实际效用。常见的技术，以了解切换机制是深度剖析与X射线光电子光谱（XPS）7，8，纳米级二离子质谱（纳米-SIMS）6，非破坏性光发光光谱（PL）8，不同大小和厚度的电气特征的功能氧化物的设备， 纳米缩影7，传输电子显微镜（TEM），能量分散X射线光谱（EDX），和电子能量损失光谱（EELS）在TEM室6，8的横截面拉梅拉。上述所有技术都为转换机制提供了令人满意的见解。但是，在大多数技术中，需要多个样本进行分析，包括原始、电成型、设置和重置设备，以了解完整的切换行为。这增加了实验的复杂性，而且耗时。此外，故障率很高，因为在尺寸为几微米的设备中定位亚纳米级灯丝比较棘手。因此，就地实验在纳米结构特征中对于理解操作机制非常重要，因为它们在实时实验中提供了证据。
现为金属绝缘体金属 （MIM） 堆栈的不对称电阻开关交叉点设备提供现场 TEM 电气偏置的规程。此协议的主要目标是使用聚焦离子束 （FIB） 和 TEM 和电气偏置的原位实验设置为 lamella 制备提供详细的方法。这个过程是使用基于混合相非晶氧化物（a-VOx）4的不对称交叉点设备的代表性研究来解释的。此外，还介绍了结合-VOx的交叉点设备的制造过程，该装置可以使用标准的微纳米制造工艺轻松放大到横杆。这个制造过程是重要的，因为它纳入横杆-VOx溶解在水中。
该协议的优点是，只有一个拉梅拉，纳米结构的变化可以在TEM中观察到，不像其他技术，其中至少需要三个设备或跛脚。这大大简化了流程，降低了时间、成本和工作量，同时为实时操作中的纳米结构变化提供了可靠的视觉证据。此外，它采用标准的微纳米制造工艺、显微镜技术和仪器，以创新的方式建立其新颖性并解决研究空白。
在此处描述的针对-VOx的交叉点设备的代表性研究中，原位 TEM 协议有助于了解极点和挥发阈值切换4背后的切换机制。用于观察原位偏置期间-VOx中的纳米结构变化的过程和方法可以很容易地扩展到原位温度、原位温度和偏置同时，只需更换拉梅拉安装芯片，以及任何其他材料，包括金属绝缘体金属夹层结构中的两层或两层以上功能材料。它有助于揭示潜在的操作机制，并解释电气或热特性。

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	<colgroup>
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		<col />
		<col />
	</colgroup>
	<tbody>
		<tr height="21">
			<td height="21" style="height:21px;width:265px;">Resist processing system</td>
			<td style="width:173px;">EV group</td>
			<td style="width:195px;">EVG 101</td>
			<td style="width:299px;"></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Acetone</td>
			<td style="width:173px;">Chem-Supply</td>
			<td style="width:195px;">AA008</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Biasing Chip - E-chip</td>
			<td style="width:173px;">Protochips</td>
			<td>E-FEF01-A4</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Developer</td>
			<td style="width:173px;">MMRC</td>
			<td style="width:195px;">AZ 400K</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Electron beam evaporator - PVD 75</td>
			<td style="width:173px;">Kurt J Leskar</td>
			<td style="width:195px;">PRO Line - eKLipse</td>
			<td></td>
		</tr>
		<tr height="24">
			<td height="24" style="height:24px;">Focused Ion beam system</td>
			<td style="width:173px;">Thermo Fisher - FEI</td>
			<td style="width:195px;">Scios DualBeamTM system</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:265px;">Hot plates</td>
			<td style="width:173px;">Brewer Science Inc.</td>
			<td style="width:195px;">1300X</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Magnetron Sputterer</td>
			<td style="width:173px;">Kurt J Leskar</td>
			<td style="width:195px;">PRO Line</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Mask aligner</td>
			<td style="width:173px;">Karl Suss</td>
			<td style="width:195px;">MA6</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Maskless Aligner</td>
			<td style="width:173px;">Heildberg instruments</td>
			<td style="width:195px;">MLA150</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:22px;">Methanol</td>
			<td style="width:173px;">Fisher scientific</td>
			<td style="width:195px;">M/4056</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Phototresist</td>
			<td style="width:173px;">MMRC</td>
			<td style="width:195px;">AZ 5412E</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:265px;">Pt source for e-beam evaporator</td>
			<td style="width:173px;">Unicore</td>
			<td style="width:195px;"></td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">The Fusion E-chip holder</td>
			<td style="width:173px;">Protochips</td>
			<td style="width:195px;">Fusion 350</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:265px;">Ti source for e-beam evaporator</td>
			<td style="width:173px;">Unicore</td>
			<td style="width:195px;"></td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Transmission Electron Microscope</td>
			<td style="width:173px;">JEOL</td>
			<td style="width:195px;">JEM 2100F</td>
			<td></td>
		</tr>
	</tbody>
</table>

in situ transmission electron microscopy with biasing and fabrication of asymmetric crossbars based on mixed-phased a-vox

由于低成本和高密度的益处，在数字存储记忆领域，电阻式切换横杆架构非常受欢迎。由于所用材料的内在性质，不同材料显示出电阻开关特性的变异性，由于潜在的操作机制，导致该领域的差异。这突出了使用纳米结构观测来理解机制的可靠技术的必要性。该协议解释了使用传输电子显微镜 （TEM） 进行电气偏差的原位纳米结构分析的详细过程和方法。它提供了实时内存操作中潜在的纳米结构变化的视觉和可靠证据。还包括非对称横杆结构的制造方法和电气特征，其中含有非定形氧化铝。此处解释的氧化铝薄膜协议可以轻松地扩展到金属介质金属夹层结构中的任何其他材料。根据对操作机制的理解，电阻开关横杆预计将为下一代存储器设备提供可编程逻辑和神经形态电路。此协议以可靠、及时和经济高效的方式揭示了任何类型的电阻开关材料中的切换机制，从而预测了设备的适用性。

使用此协议为a-VOx交叉点设备取得的结果在图8中解释。图8A显示了完整拉梅拉的TEM显微图。在这里，衍射模式（插入）表示氧化物薄膜的无定形性质。对于原位 TEM 测量，控制电压从 25 mV 到 8 V 在 20 mV 步骤中应用，底部电极 （BE） 为正偏置，顶部电极 （TE） 接地。图8B显示，在4 V时，氧化物层中形成了局部?...

Watch this Scientific Journal Video about In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx at JoVE.com

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

这里介绍了一个协议，用于分析纳米结构的变化，在原位偏置与传输电子显微镜 （TEM） 堆叠金属绝缘体金属结构。它在下一代可编程逻辑电路和神经微敏硬件的电阻开关横杆中具有显著应用，可揭示其基本操作机制和实际适用性。

基于混合相位a-VOx的不对称横杆的偏置和制造现场传输电子显微镜

Resistive switching crossbar architecture is highly desired in the field of digital memories due to low cost and high-density benefits. Different ...

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Revealing Dynamic Processes of Materials in Liquids Using Liquid Cell Transmission Electron Microscopy

在液体中使用液体池透射电子显微镜揭示材料的动态过程

The recent development for in situ transmission electron microscopy, which allows imaging through liquids with high spatial resolution, has attracted ...

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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

在透射电子显微镜原位时间相关的介质击穿：一种可能性，了解微电子器件的失效机理

The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. ...

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

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散装异质结太阳能电池的印刷和制作<em&gt;原位</em&gt;形态特征

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices ...

Studying Dynamic Processes of Nano-sized Objects in Liquid using Scanning Transmission Electron Microscopy

使用扫描透射电子显微镜研究纳米大小的物体的动态过程中的液体

Samples fully embedded in liquid can be studied at a nanoscale spatial resolution with Scanning Transmission Electron Microscopy (STEM) using a ...

A Method for Obtaining Serial Ultrathin Sections of Microorganisms in Transmission Electron Microscopy

一种在透射电镜中获取微生物连续超薄切片的方法

Observing cells and cell components in three dimensions at high magnification in transmission electron microscopy requires preparing serial ultrathin ...

Focused Ion Beam Fabrication of LiPON-based Solid-state Lithium-ion Nanobatteries for In Situ Testing

Focused Ion Beam Fabrication of LiPON-based Solid-state Lithium-ion Nanobatteries for In Situ Testing

基于 LiPON 的固态锂离子 Nanobatteries 的聚焦离子束制备方法在原位测试中的研究

Solid-state electrolytes are a promising replacement for current organic liquid electrolytes, enabling higher energy densities and improved safety of ...

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

基于侧向 NIPIN Phototransistors 的柔性图像传感器的研制

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, ...

Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses

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结构转换的原位和原位研究方法: 金属玻璃结晶的实例

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Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques

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Electron and x-ray magnetic microscopies allow for high-resolution magnetic imaging down to tens of nanometers. However, the samples need to be prepared ...

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

用畸变校正扫描透射电镜进行单数字纳米电子束光刻

We demonstrate extension of electron-beam lithography using conventional resists and pattern transfer processes to single-digit nanometer dimensions by ...