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Department of Physics
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Time-resolved single dopant charge dynamics in silicon.
Nature communications Oct, 2016 | Pubmed ID: 27782125
Time-Resolved Imaging of Negative Differential Resistance on the Atomic Scale.
Physical review letters Dec, 2016 | Pubmed ID: 28084769
Atomic White-Out: Enabling Atomic Circuitry through Mechanically Induced Bonding of Single Hydrogen Atoms to a Silicon Surface.
ACS nano Sep, 2017 | Pubmed ID: 28719182
Resolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State.
ACS nano Nov, 2017 | Pubmed ID: 29091424
University of Alberta
National Research Council of Canada, Edmonton
Mohammad Rashidi1,2,
Wyatt Vine1,
Jacob A.J. Burgess3,4,5,
Marco Taucer1,2,6,
Roshan Achal1,
Jason L. Pitters2,
Sebastian Loth3,4,
Robert A. Wolkow1,2
1Department of Physics, University of Alberta,
2National Institute for Nanotechnology, National Research Council of Canada, Edmonton,
3, Max Planck Institute for the Structure and Dynamics of Matter,
4, Max Planck Institute for Solid State Research,
5Department of Physics and Astronomy, University of Manitoba,
6Joint Attosecond Science Laboratory, University of Ottawa
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