Department of Physics
Robert A. Wolkow has not added Biography.
If you are Robert A. Wolkow and would like to personalize this page please email our Author Liaison for assistance.
Field regulation of single-molecule conductivity by a charged surface atom.
Nature Jun, 2005 | Pubmed ID: 15931218
In-line holographic electron microscopy in the presence of external magnetic fields.
Ultramicroscopy Apr, 2008 | Pubmed ID: 17822853
Self-directed growth of contiguous perpendicular molecular lines on H-Si(100) surfaces.
The journal of physical chemistry. A Dec, 2007 | Pubmed ID: 17867660
Indications of field-directing and self-templating effects on the formation of organic lines on silicon.
The Journal of chemical physics Mar, 2011 | Pubmed ID: 21428656
Organic nanostructures on hydrogen-terminated silicon report on electric field modulation of dangling bond charge state.
Journal of the American Chemical Society Jul, 2012 | Pubmed ID: 22708929
Field ion microscope evaluation of tungsten nanotip shape using He and Ne imaging gases.
Ultramicroscopy Nov, 2012 | Pubmed ID: 23000917
Conductivity of Si(111)-(7×7): the role of a single atomic step.
Physical review letters Jun, 2014 | Pubmed ID: 24996100
Single-electron dynamics of an atomic silicon quantum dot on the H-Si(100)-(2×1) surface.
Physical review letters Jun, 2014 | Pubmed ID: 25014824
New fabrication technique for highly sensitive qPlus sensor with well-defined spring constant.
Ultramicroscopy Nov, 2015 | Pubmed ID: 26117434
Time-resolved single dopant charge dynamics in silicon.
Nature communications Oct, 2016 | Pubmed ID: 27782125
Quantum Transport in Gated Dangling-Bond Atomic Wires.
Nano letters 01, 2017 | Pubmed ID: 28073256
Time-Resolved Imaging of Negative Differential Resistance on the Atomic Scale.
Physical review letters Dec, 2016 | Pubmed ID: 28084769
Indications of chemical bond contrast in AFM images of a hydrogen-terminated silicon surface.
Nature communications Feb, 2017 | Pubmed ID: 28194036
Atomic White-Out: Enabling Atomic Circuitry through Mechanically Induced Bonding of Single Hydrogen Atoms to a Silicon Surface.
ACS nano Sep, 2017 | Pubmed ID: 28719182
Resolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State.
ACS nano Nov, 2017 | Pubmed ID: 29091424
Mohammad Rashidi1,2,
Wyatt Vine1,
Jacob A.J. Burgess3,4,5,
Marco Taucer1,2,6,
Roshan Achal1,
Jason L. Pitters2,
Sebastian Loth3,4,
Robert A. Wolkow1,2
1Department of Physics, University of Alberta,
2National Institute for Nanotechnology, National Research Council of Canada, Edmonton,
3, Max Planck Institute for the Structure and Dynamics of Matter,
4, Max Planck Institute for Solid State Research,
5Department of Physics and Astronomy, University of Manitoba,
6Joint Attosecond Science Laboratory, University of Ottawa