The authors thank New Energy and Industrial Technology Development Organization (NEDO) under Ministry of Economy, Trade, and Industry (METI), Japan, for the financial support.

1.准备PDMS邮票<ol><li>设置一个纳米孔的模具（nanoimprinted环烯烃聚合物的塑料膜，尺寸50毫米×50毫米）在一个聚四氟乙烯（PTFE）的容器。 </li><li>权衡的乙烯基甲基硅氧烷 - 二甲基硅氧烷共聚物（0.76克为50毫米×50毫米的模具）在一次性玻璃瓶和铂乙烯基的有机硅氧烷混合它（6微升，使用一个数字式微型吸移管与一次性聚丙烯尖端）和2,4-， 6,8- tetramethyltetra-vinylcyclotetrasiloxane（24微升，使用一个数字式微型吸移管与一次性聚丙烯尖端）。 </li><li>添加甲基氢 - 二甲基硅氧烷共聚物（0.24毫升，使用一个数字式微型吸移管与一次性聚丙烯尖端）在玻璃瓶中，混合它迅速用一次性玻璃吸液管。后在模具中的聚四氟乙烯容器中设置的表面用N 2吹，倒入所得混合物（“硬”的PDMS预聚物）在模具上，并开始旋转涂布荷兰国际集团以1000rpm进行40秒达到〜40微米的层厚度。 </li><li>将旋涂样品中的热室预热至65℃进行30分钟至简要地交联的硬PDMS。 </li><li>在加热过程中，称量硅氧烷（6克）中，用催化剂（0.6克）在一个一次性的玻璃瓶混合。将玻璃瓶在真空干燥器并应用真空（〜133 Pa）下进行15分钟，以除去截留在聚硅氧烷混合物（“软”的PDMS预聚物）的空气。 </li><li>取出从加热室和真空干燥器，分别在模具和软的PDMS预聚物和预聚物快速倒入软的PDMS到加热的模具。软PDMS层的厚度为〜3毫米。 </li><li>再次放置在真空干燥器中所得样品进行进一步脱气在〜133Pa的至少1小时。 </li><li>转移脱气样品到加热室和启动至80℃（升温速度〜3℃/分钟）逐渐加热。保持该温度5小时交联的硬和软的PDMS完全。 </li><li>冷却该样品至室温后，剥离PDMS从模具仔细戳。重用模具如果需要，制备第二（或更多）的邮票。注意：相同的模具可以不的邮票质量劣化被用于至少五次。 </li><li>切割所得的纳米柱邮票（双层硬/软PDMS复合）27成用刮刀件所需大小的（通常为7毫米×7毫米为太阳能电池），并将它们在空气中保存，直到使用。 </li></ol> 2.准备工作嵌段共聚物解决方案<ol><li>权衡聚苯乙烯嵌段 -聚-2-乙烯基吡啶（PS-b -P2VP）的粉末在玻璃瓶中，并用邻二甲苯混合它在3毫克/毫升的比率（PS-b -P2VP / 邻二甲苯 ） 。 </li><li>使用的PTFE涂覆的磁性搅拌棒，在70℃进行1小时搅拌混合。 </li><li>保持时间超过24小时，将得到的溶液在RT搅拌而不环来完成的自组装胶束的形成。紧密密封所述溶液并将其储存在环境条件下。注：该解决方案的品质不变，即使一年多的筹备后。 </li></ol> 3.准备μμc-Si组成：H衬底<ol><li>覆盖洗涤眼镜用的SnO 2：F（表示玻璃/ SnO 2的：F，下同）在RT下用H 2 O（500毫升），洗涤剂（500毫升），和H 2 O（500毫升）使用超声波浴（15分的每一个）。通过吹氮气干燥。 </li><li>加载清洗的玻璃/ SnO 2的：使用直流（DC）溅射系统用表2中规定的条件嘎（20毫微米）：F衬底中的衬底支架和存款的ZnO。 </li><li>加载玻璃/ SnO 2的：F /氧化锌：使用等离子体增强化学ħρ（10纳米），I（500纳米）， 和 n（40纳米）层：Ga的基板在另一衬底保持器和存款μ结晶硅VAPOř沉积（PECVD）系统用表2中规定的条件。 </li><li>存储所产生的μ晶体硅：H（玻璃/ SnO 2的：F /氧化锌：尕/μ晶体硅：H 对-我 - N）在真空中或N 2，直到转移印刷步骤基材。 </li></ol> PDMS邮票4银涂层<ol><li>吹入N 2冲洗使用超声波浴中15分钟，并干燥的。PDMS压模（在步骤1中制备）用EtOH（30 毫升 ）中。 </li><li>加载上用双面粘合带的试样保持器的清洁。PDMS压模并沉积使用电子束（EB）蒸发系统具有下列条件的Ag膜（10-80纳米）：沉积速率= 5-10埃/秒，压力=〜1.5×10-4帕。 </li><li>取出的Ag涂覆的邮票从EB蒸发系统和下面的转印步骤立即使用它们。 </li></ol>银纳米盘上Thin- 5.转移印花薄膜硅表面<ol><li>取出薄膜Si衬底储存在真空或N 2和旋转涂布与PS-b -P2VP溶液（0.3 ml的50毫米×50毫米的样品，用一数字式微型移液器用一次性聚丙烯尖端）在5000离心40秒。 </li><li>湿使用乙醇数字微量移液器（5微米/单元区域）的PS-b -P2VP涂层的表面并应用银涂层的PDMS邮票轻声对乙醇湿面。不要按邮票。 </li><li>放置的薄膜硅衬底在真空室中的印模和施加真空（〜133帕）。 </li><li> 5分钟后，填充真空室与空气和取出薄膜Si衬底。 </li><li>通过保持该印模的两侧用镊子转移印刷的Ag纳米盘取下薄膜Si衬底的邮票。注：如果成功，冲压的轨迹是一个绿点可见。 </li><li>冲洗转印印刷的薄膜Si衬底用Et的连续流OH，持续15秒（〜30毫升）和无水吹入N 2。 </li><li>删除使用Ar等离子体系统对PS-B-P2VP涂层。 <ol><li>放置在Ar等离子体系统的处理室中转移印刷薄膜硅衬底。 </li><li>泵出的空气在处理室〜5分钟（压力约20帕）。 </li><li>打开的Ar气体管线的阀和手动调节流量至4标准立方厘米。等待〜5分钟，以稳定的压力为40Pa。 </li><li>生成氩等离子体108秒。 </li><li>关闭的Ar气体管线的阀，停止泵送，并填充空气进入处理室取出等离子体清洗，转印印刷薄膜Si衬底。 </li></ol></li></ol> 6.完成的薄膜硅型太阳能电池制造<ol><li>附着金属掩模到转印印刷的薄膜使用聚酰亚胺带的Ar等离子体处理之后的Si衬底。 </li><li>加载掩蔽的基板的DC溅射系统和deposi的基板夹具中牛逼的ZnO：嘎（100纳米），银（250纳米），和ZnO：嘎（40纳米），依次用表2规定的条件。 </li><li>分离从基片上的金属掩模和除去掩蔽薄膜硅层（即，其中的ZnO的区域：Ga的和Ag不沉积），使用反应离子蚀刻（RIE）系统。 <ol><li>将样品中的RIE系统的处理室中。 </li><li>泵出按照生产商的说明，将空气中的处理室。 </li><li>设置在工艺条件如下按照制造商的指令：SF 6 / O 2流量 = 100 / 20sccm的，压力= 20Pa下，功率100W，时间为1分20秒。 </li><li>打开的SF 6和 O 2的气体管线，稳定的压力，并产生等离子体。 </li><li>关闭SF 6和O 2气路的阀，停止抽水，并填写N 2进工艺室取出样品。 </li></ol></li><li>放在在真空退火室的样品，并开始在真空下（〜133帕）至175℃逐渐加热。保持该温度2小时，然后允许冷却到室温。填写中的空气室和取出样品，它现在可以称为细胞。 </li><li>在正面透明电极焊料的Sn-Zn系合金（玻璃/ SnO 2的：F /氧化锌：镓，用RIE处理的暴露部分）使用超声波焊接装置。 </li></ol> 7.测量外部量子效率（EQE） <ol><li>附上的遮光掩模，用聚酰亚胺带制成的一个小区，并设置掩蔽细胞在细胞固定器。连接探针到前焊接电极（+）和背面银/氧化锌：Ga的电极（ - ）。 </li><li>使用以下制造商的说明用的波长范围内的分别300-1,100 nm和5纳米，步骤的EQE测量系统测量的EQE谱。 </li></ol> 8.测量光伏电流 - 电压（JV）的特征istics <ol><li>校准合资特性测量系统的使用非晶硅参考单元的光的强度。 <ol><li>设置非晶硅参考单元向合营特性的测量系统的一个细胞保持部，和照亮的光。 </li><li>读光生电流使用数字万用表搭载于合资特性的测量系统。调整光强度，直到光生电流示出了用于参考单元（8.34毫安/厘米2）的右边的值。 </li></ol></li><li>附遮光掩模至细胞，并设置掩蔽细胞在细胞固定器。连接探针到前焊接电极（+）和背面银/氧化锌：Ga的电极（ - ）。 </li><li>照亮校准光（100毫瓦/厘米2，1太阳）在细胞上，并测量使用合营特性测量系统的光生电流下列制造商的说明用0.02 V的电压阶跃</li></ol>

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A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Interfacial+Chemistries+for+Nanoscale+Transfer+Printing.">Interfacial Chemistries for Nanoscale Transfer Printing.</a> J. Am. Chem. Soc. 124, 7654-7655 (2002).</li><li>Hylton, N. P., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Loss+mitigation+in+plasmonic+solar+cells:+aluminium+nanoparticles+for+broadband+photocurrent+enhancements+in+GaAs+photodiodes.">Loss mitigation in plasmonic solar cells: aluminium nanoparticles for broadband photocurrent enhancements in GaAs photodiodes.</a> Sci. Rep. 3, 2874-1-6 (2013).</li><li>Delamarche, E., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Microcontact+Printing+Using+Poly(dimethylsiloxane)+Stamps+Hydrophilized+by+Poly(ethylene+oxide)+Silanes.">Microcontact Printing Using Poly(dimethylsiloxane) Stamps Hydrophilized by Poly(ethylene oxide) Silanes.</a> Langmuir. 19, 8749-8758 (2003).</li><li>Mizuno, H., Sai, H., Matsubara, K., Kondo, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Plasmonic+Light+Trapping+in+Amorphous+Si+Solar+Cells+Using+Periodic+Ag+Nanodisk+Structures.">Plasmonic Light Trapping in Amorphous Si Solar Cells Using Periodic Ag Nanodisk Structures.</a> MRS Proc. , 1627-1613 (2014).</li></ol>

The authors have nothing to disclose.

在这篇文章中，双层硬/软PDMS复合被用作压模材料。27这种组合被认为是必要的，以精确地复制父纳米结构在模具中，这是一个六方密堆圆孔数组，其直径的230纳米，500纳米的深度，并且为460nm孔中心到中心的间距。当使用只有软的PDMS，印模总是导致了纳米结构很差表面（例如，在反相柱结构没有锋利的边缘），由于具有低杨氏模量; 28因此，银纳米盘的转移印花从未实现的。 <p...

出现了对功能性纳米结构在广泛的技术领域中的应用的长期需求。其中一个为这一趋势的预期是打开的器件结构导致改进或创新演出新的设计。在太阳能电池的领域，例如，使用金属纳米结构已被积极探索，因为它们的有趣的光学（即，等离子）特性，1潜在有益构造有效光捕获系统。2,3事实上，某些理论研究4 -6已经提出，这种等离子光俘获能达到效果超过了常规射线光学器件（纹理）为基础的光捕集极限。7其结果，制定战略以期望的金属纳米结构的太阳能电池集成已经变得越来越重要，为了实现这些理论预测。 许多策略都10,11这两者都被提出，以满足这种挑战。8-24这些包括，例如，简单的（低成本）金属膜8,9-或预先合成的金属纳米粒子的分散体的热退火，导致了成功示范等离子灯光诱杀。然而，应该指出的是，通过这些方法制造的金属纳米结构通常是具有挑战性的，以匹配的理论模型。与此相反，在半导体工业中传统的纳米加工技术，如光刻法和电子束光刻，12,13可以控制结构远低于亚100纳米的水平，但它们往往太昂贵和费时的适用于太阳能电池，其中以低成本大面积的能力是必不可少的。为了满足低成本，高通量，并具有纳米级的可控的大面积的要求，方法如纳米压印光刻，14-16软光刻，17,18 </sup&gt;纳米球光刻，19-21和孔面罩胶体光刻22-24将大有可为。在这些选择中，我们已经开发出一种软平版印刷，先进转印印刷技术。25使用的纳米结构的聚（二甲基硅氧烷）（PDMS）的邮票和嵌段共聚物系粘合剂层，有序金属纳米结构的图案化可以容易地在多个技术实现的有关材料，包括那些用于太阳能电池。 本文的重点是介绍我们的转移印花方法的详细过程纳入有效的光捕获电浆纳米结构在现有的太阳能电池结构。作为一个示范的情况下，银纳米盘和薄膜氢化微晶硅（微晶硅：H）太阳能电池在该研究中选择的（图1），26虽然其它类型的金属和太阳能电池的，使用这个方法兼容。再加上它的进程简单的方法是感兴趣的不同研究人员的一个方便的工具来整合功能的金属纳米结构器件。

<table border="0" cellpadding="0" cellspacing="0" style="width:864px;" width="863">
	<colgroup>
		<col />
		<col />
		<col />
		<col />
	</colgroup>
	<tbody>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">Nanohole mold</td>
			<td style="width:200px;">Scivax 
			http://www.scivax.com</td>
			<td style="width:129px;">FLH230/500-120</td>
			<td style="width:319px;"></td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">PTFE container</td>
			<td style="width:200px;">Eishin 
			http://www.colbyeishin.com</td>
			<td style="width:129px;">n/a</td>
			<td style="width:319px;">Custom made</td>
		</tr>
		<tr height="21">
			<td height="63" rowspan="3" style="height:63px;width:216px;">Hard-PDMS materials</td>
			<td rowspan="3" style="width:200px;">Gelest 
			http://www.gelest.com/gelest/forms/Home/home.aspx</td>
			<td style="width:129px;">VDT-731</td>
			<td>Vinylmethylsiloxane-dimethylsiloxane copolymer</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:129px;">SIP6831.1</td>
			<td>Pt-divinyltetramethyldisiloxane complex</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:129px;">HMS-301</td>
			<td>Methylhydrosiloxane-dimethylsiloxane copolymer</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">2,4,6,8-tetramethyltetra-vinylcyclotetrasiloxane</td>
			<td style="width:200px;">Sigma-Aldrich 
			http://www.sigmaaldrich.com</td>
			<td style="width:129px;">396281</td>
			<td>Additive for hard-PDMS</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">Soft-PDMS materials</td>
			<td style="width:200px;">Dow Corning 
			http://www.dowcorning.com</td>
			<td style="width:129px;">Sylgard-184</td>
			<td>Silicone precursor</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;">PS-b-P2VP</td>
			<td style="width:200px;">Polymer Source 
			http://polymersource.com</td>
			<td style="width:129px;">P5742-S2VP</td>
			<td>Mn &#215; 103 = 133-b-132</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Glass/SnO2:F substrates</td>
			<td style="width:200px;">Asahi Glass Co. Ltd. 
			http://www.agc.com/english/company</td>
			<td style="width:129px;">Type VU</td>
			<td style="width:319px;">Chemical mechanical polished by D-process Inc. (http://d-process.jp/index.html) to flatten the surfaces</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Detergent</td>
			<td style="width:200px;">Fruuchi Chemical Co. 
			http://www.furuchi.co.jp/eng/main.htm</td>
			<td style="width:129px;">Semico-clean 56</td>
			<td style="width:319px;">Used for the cleaning of Glass/SnO2:F substrates</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">ZnO:Ga supputtering target</td>
			<td style="width:200px;">AGC Ceramics Co. Ltd. 
			http://www.agcc.jp/2005/en/index.html</td>
			<td style="width:129px;">5.7GZO</td>
			<td></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Ag supputtering target</td>
			<td style="width:200px;">Mitsubishi Materials Co. 
			http://www.mitsubishicarbide.com/mmc/en/index.html</td>
			<td style="width:129px;">4NAg</td>
			<td></td>
		</tr>
		<tr height="84">
			<td height="84" style="height:84px;width:216px;">Double-sided adhesive tape</td>
			<td style="width:200px;">Nisshin EM Co. 
			http://nisshin-em.co.jp/information/carbontape.html</td>
			<td style="width:129px;">732</td>
			<td></td>
		</tr>
		<tr height="120">
			<td height="120" style="height:120px;width:216px;">Polyimide tape</td>
			<td style="width:200px;">Dupont 
			http://www.dupont.com/products-and-services/membranes-films/polyimide-films/brands/kapton-polyimide-film.html</td>
			<td style="width:129px;">Kapton 650S#25</td>
			<td></td>
		</tr>
		<tr height="84">
			<td height="84" style="height:84px;width:216px;">Sn-Zn-based Solder</td>
			<td style="width:200px;">Kuroda Techno Co., Ltd. 
			http://www.kuroda-techno.com/english/index.html</td>
			<td style="width:129px;">Cerasolzer AL-200</td>
			<td></td>
		</tr>
		<tr height="84">
			<td height="84" style="height:84px;width:216px;">Digital micro pipette</td>
			<td style="width:200px;">Nichiryo 
			http://www.nichiryo.co.jp/en/product/pipette/ex/index.html</td>
			<td style="width:129px;">00-NPX2-20 
			00-NPX2-200 
			00-NPX2-1000</td>
			<td></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Heating chamber</td>
			<td style="width:200px;">Tokyo Rikakikai Co., Ltd. 
			http://www.eyelaworld.com/product_view.php?id=120</td>
			<td style="width:129px;">VOS-201SD</td>
			<td></td>
		</tr>
		<tr height="84">
			<td height="126" rowspan="2" style="height:126px;width:216px;">Electron beam evaporator 
			(two types)</td>
			<td style="width:200px;">Canon-Anelva 
			https://www.canon-anelva.co.jp/english/index.html</td>
			<td style="width:129px;">n/a</td>
			<td style="width:319px;">Custom made</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:200px;">Arios 
			http://arios.com/</td>
			<td style="width:129px;">n/a</td>
			<td>Custom made</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">Sputtering system</td>
			<td style="width:200px;">Ulvac 
			http://www.ulvac.co.jp/en</td>
			<td style="width:129px;">SBR-2306</td>
			<td style="width:319px;"></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">PECVD system&#160;</td>
			<td style="width:200px;">Shimadzu Emit Co. Ltd. 
			http://www.shimadzu.co.jp/emit/en/</td>
			<td style="width:129px;">SLCM-13</td>
			<td style="width:319px;"></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Ar plasma system&#160;</td>
			<td style="width:200px;">Diner Electric Gmbh 
			http://www.plasma.de/index.html</td>
			<td style="width:129px;">Femto&#160;</td>
			<td></td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">RIE system</td>
			<td style="width:200px;">Samco Inc. 
			http://www.samcointl.com</td>
			<td style="width:129px;">RIE-10NR</td>
			<td></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Ultrasonic soldering device</td>
			<td style="width:200px;">Colby-Eishin Enterprises, Inc. 
			http://www.colbyeishin.com/sub_sunbonder.htm</td>
			<td style="width:129px;">SUNBONDER</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">EQE measurement system</td>
			<td rowspan="3" style="width:200px;">Bunkoukeiki Co. Ltd. 
			http://www.bunkoukeiki.co.jp/</td>
			<td style="width:129px;">CEP-25BXS</td>
			<td></td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">J-V characteristics measurement system</td>
			<td style="width:129px;">OTENTOSUN-5S-I/V</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Amorphous Si reference cell</td>
			<td style="width:129px;">WPVS-NPB-S1</td>
			<td>For light intensity calibration</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">Digital multi-meter</td>
			<td style="width:200px;">Keithley Instruments Inc. 
			http://www.keithley.com/</td>
			<td style="width:129px;">2400</td>
			<td></td>
		</tr>
	</tbody>
</table>

integration of light trapping silver nanostructures in hydrogenated microcrystalline silicon solar cells by transfer printing

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly known as plasmonic effects, play an important role. Research in this field has, however, been impeded owing to the difficulty of fabricating devices containing the desired functional metal nanostructures. In order to provide a viable strategy to this issue, we herein show a transfer printing-based approach that allows the quick and low-cost integration of designed metal nanostructures with a variety of device architectures, including solar cells. Nanopillar poly(dimethylsiloxane) (PDMS) stamps were fabricated from a commercially available nanohole plastic film as a master mold. On this nanopatterned PDMS stamps, Ag films were deposited, which were then transfer-printed onto block copolymer (binding layer)-coated hydrogenated microcrystalline Si (&#181;c-Si:H) surface to afford ordered Ag nanodisk structures. It was confirmed that the resulting Ag nanodisk-incorporated &#181;c-Si:H solar cells show higher performances compared to a cell without the transfer-printed Ag nanodisks, thanks to plasmonic light trapping effect derived from the Ag nanodisks. Because of the simplicity and versatility, further device application would also be feasible thorough this approach.

图2概述了一般过程的Ag纳米盘的μC-Si的表面上的转移印花：H（N层）。简言之，将Ag膜（厚度：10-80 nm）的首先沉积通过电子束蒸发纳米柱PDMS压模的表面上。并行地，PS-b -P2VP溶液旋涂一个新鲜配制μC-Si的表面上：H n中层。随后，乙醇的液滴放置在PS-b -P2VP涂覆的表面，并且所述Ag沉积PDMS压模放置在乙醇-湿PS-b -P2VP表面。没有加压是必要的邮票，因为该?...

Watch this Scientific Journal Video about Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing at JoVE.com

Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing

A viable transfer printing-based methodology to introduce plasmonic metal nanostructures in solar cells is described. Using nanopillar poly(dimethylsiloxane) stamps, an Ag-based ordered nanodisk array was integrated with standard hydrogenated microcrystalline Si solar cells, which led to improved device performances due to plasmonic light trapping.

灯光诱杀银纳米结构通过转移印花在氢化微晶硅太阳能电池集成

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly ...

integration-light-trapping-silver-nanostructures-hydrogenated

Research

JoVE Journal

Engineering

7.7K 次观看.  National Institute of Advanced Industrial Science and Technology, Koriyama, Fukushima, Japan. A viable transfer printing-based methodology to introduce plasmonic metal nanostructures in solar cells is described. Using nanopillar poly(dimethylsiloxane) stamps, an Ag-based ordered nanodisk array was integrated with standard hydrogenated microcrystalline Si solar cells, which led to improved device performances due to plasmonic light trapping.

视频: Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach.
The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles.
To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 &mu;m thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint.
To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23&deg;C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing conditions. An optimised nanoparticle array alone results in cell Jsc enhancement of about 28%, similar to the effect of the diffuse reflector. The photocurrent can be further increased by coating the nanoparticles by a low refractive index dielectric, like MgF2, and applying the diffused reflector. The complete plasmonic cell structure comprises the polycrystalline silicon film, a silver nanoparticle array, a layer of MgF2, and a diffuse reflector. The Jsc for such cell is 21-23 mA/cm2, up to 45% higher than Jsc of the original cell without light-trapping or ~25% higher than Jsc for the cell with the diffuse reflector only.
Introduction
Light-trapping in silicon solar cells is commonly achieved via light scattering at textured interfaces. Scattered light travels through a cell at oblique angles for a longer distance and when such angles exceed the critical angle at the cell interfaces the light is permanently trapped in the cell by total internal reflection (Animation 1: Light-trapping). Although this scheme works well for most solar cells, there are developing technologies where ultra-thin Si layers are produced planar (e.g. layer-transfer technologies and epitaxial c-Si layers) 1 and or when such layers are not compatible with textures substrates (e.g. evaporated silicon) 2. For such originally planar Si layer alternative light trapping approaches, such as diffuse white paint reflector 3, silicon plasma texturing 4 or high refractive index nanoparticle reflector 5 have been suggested.
Metal nanoparticles can effectively scatter incident light into a higher refractive index material, like silicon, due to the surface plasmon resonance effect 6. They also can be easily formed on the planar silicon cell surface thus offering a light-trapping approach alternative to texturing. For a nanoparticle located at the air-silicon interface the scattered light fraction coupled into silicon exceeds 95% and a large faction of that light is scattered at angles above critical providing nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment 6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested 8. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles 9. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance 10.
The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing through the nanoparticle array on re-entering the cell and the reflector itself can be made diffuse - both effects further facilitating light scattering and hence light-trapping. Importantly, the Ag nanoparticles have to be encapsulated with an inert and low refractive index dielectric, like MgF2 or SiO2, from the rear reflector to avoid mechanical and chemical damage 7. Low refractive index for this cladding layer is required to maintain a high coupling fraction into silicon and larger scattering angles, which are ensured by the high optical contrast between the media on both sides of the nanoparticle, silicon and dielectric 6. The photocurrent of the plasmonic cell with the diffuse rear reflector can be up to 45% higher than the current of the original cell or up to 25% higher than the current of an equivalent cell with the diffuse reflector only.

Polycrystalline silicon thin-film solar cells on glass are fabricated by deposition of boron and phosphorous doped silicon layers followed by crystallisation, defect passivation and metallisation. Plasmonic light-trapping is introduced by forming Ag nanoparticles on the silicon cell surface capped with a diffused reflector resulting in ~45% photocurrent enhancement.

多晶硅薄膜太阳能电池电浆增强光捕获

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To ...

科研

工程学

A Method to Fabricate Disconnected Silver Nanostructures in 3D

The standard nanofabrication toolkit includes techniques primarily aimed at creating 2D patterns in dielectric media. Creating metal patterns on a submicron scale requires a combination of nanofabrication tools and several material processing steps. For example, steps to create planar metal structures using ultraviolet photolithography and electron-beam lithography can include sample exposure, sample development, metal deposition, and metal liftoff. To create 3D metal structures, the sequence is repeated multiple times. The complexity and difficulty of stacking and aligning multiple layers limits practical implementations of 3D metal structuring using standard nanofabrication tools. Femtosecond-laser direct-writing has emerged as a pre-eminent technique for 3D nanofabrication.1,2 Femtosecond lasers are frequently used to create 3D patterns in polymers and glasses.3-7 However, 3D metal direct-writing remains a challenge. Here, we describe a method to fabricate silver nanostructures embedded inside a polymer matrix using a femtosecond laser centered at 800 nm. The method enables the fabrication of patterns not feasible using other techniques, such as 3D arrays of disconnected silver voxels.8 Disconnected 3D metal patterns are useful for metamaterials where unit cells are not in contact with each other,9 such as coupled metal dot10,11or coupled metal rod12,13 resonators. Potential applications include negative index metamaterials, invisibility cloaks, and perfect lenses.
In femtosecond-laser direct-writing, the laser wavelength is chosen such that photons are not linearly absorbed in the target medium. When the laser pulse duration is compressed to the femtosecond time scale and the radiation is tightly focused inside the target, the extremely high intensity induces nonlinear absorption. Multiple photons are absorbed simultaneously to cause electronic transitions that lead to material modification within the focused region. Using this approach, one can form structures in the bulk of a material rather than on its surface.
Most work on 3D direct metal writing has focused on creating self-supported metal structures.14-16 The method described here yields sub-micrometer silver structures that do not need to be self-supported because they are embedded inside a matrix. A doped polymer matrix is prepared using a mixture of silver nitrate (AgNO3), polyvinylpyrrolidone (PVP) and water (H2O). Samples are then patterned by irradiation with an 11-MHz femtosecond laser producing 50-fs pulses. During irradiation, photoreduction of silver ions is induced through nonlinear absorption, creating an aggregate of silver nanoparticles in the focal region. Using this approach we create silver patterns embedded in a doped PVP matrix. Adding 3D translation of the sample extends the patterning to three dimensions.

Femtosecond-laser direct-writing is frequently used to create three-dimensional (3D) patterns in polymers and glasses. However, patterning metals in 3D remains a challenge. We describe a method for fabricating silver nanostructures embedded inside a polymer matrix using a femtosecond laser centered at 800 nm.

一个断开连接的银纳米结构的方法来制作的3D

The standard nanofabrication toolkit includes  techniques primarily aimed at creating 2D patterns in dielectric media. Creating  metal patterns on a ...

Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent thermal evaporation, and it absorbs visible light strongly. However, for a long time the record power conversion efficiency of SnS solar cells remained below 2%. Recently we demonstrated new certified record efficiencies of 4.36% using SnS deposited by atomic layer deposition, and 3.88% using thermal evaporation. Here the fabrication procedure for these record solar cells is described, and the statistical distribution of the fabrication process is reported. The standard deviation of efficiency measured on a single substrate is typically over 0.5%. All steps including substrate selection and cleaning, Mo sputtering for the rear contact (cathode), SnS deposition, annealing, surface passivation, Zn(O,S) buffer layer selection and deposition, transparent conductor (anode) deposition, and metallization are described. On each substrate we fabricate 11 individual devices, each with active area 0.25 cm2. Further, a system for high throughput measurements of current-voltage curves under simulated solar light, and external quantum efficiency measurement with variable light bias is described. With this system we are able to measure full data sets on all 11 devices in an automated manner and in minimal time. These results illustrate the value of studying large sample sets, rather than focusing narrowly on the highest performing devices. Large data sets help us to distinguish and remedy individual loss mechanisms affecting our devices.

Tin sulfide (SnS) is a candidate material for Earth-abundant, non-toxic solar cells. Here, we demonstrate the fabrication procedure of the SnS solar cells employing atomic layer deposition, which yields 4.36% certified power conversion efficiency, and thermal evaporation which yields 3.88%.

通过热蒸发和原子层沉积使记录效率的SnS太阳能电池

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent ...

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of biosensing devices. We report on a protocol of using KrF and ArF lasers irradiating Si (001) samples immersed in a liquid environment with low number of pulses and operating at moderately low pulse fluences to induce Si wettability modification. Wafers immersed for up to 4 hr in a 0.01% H2O2/H2O solution did not show measurable change in their initial contact angle (CA) ~75&#176;. However, the 500-pulse KrF and ArF lasers irradiation of such wafers in a microchamber filled with 0.01% H2O2/H2O solution at 250 and 65 mJ/cm2, respectively, has decreased the CA to near 15&#176;, indicating the formation of a superhydrophilic surface. The formation of OH-terminated Si (001), with no measurable change of the wafer&#8217;s surface morphology, has been confirmed by X-ray photoelectron spectroscopy and atomic force microscopy measurements. The selective area irradiated samples were then immersed in a biotin-conjugated fluorescein-stained nanospheres solution for 2 hr, resulting in a successful immobilization of the nanospheres in the non-irradiated area. This illustrates the potential of&#160;the method for selective area biofunctionalization and fabrication of advanced Si-based biosensing architectures. We also describe a similar protocol of irradiation of wafers immersed in methanol (CH3OH) using ArF laser operating at pulse fluence of 65 mJ/cm2 and in situ formation of a strongly hydrophobic surface of Si (001) with the CA of 103&#176;. The XPS results indicate ArF laser induced formation of Si&#8211;(OCH3)x compounds responsible for the observed hydrophobicity. However, no such compounds were found by XPS on the Si surface irradiated by KrF laser in methanol, demonstrating the inability of the KrF laser to photodissociate methanol and create -OCH3 radicals.

We report on a process of in situ alteration of HF treated Si (001) surface into a hydrophilic or hydrophobic state by irradiating samples in microfluidic chambers filled with&#160;H2O2/H2O solution (0.01%-0.5%) or methanol solutions using pulsed UV laser of a relative low pulse fluence.

硅表面润湿性的选择区域改性脉冲紫外激光照射在液体环境

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of ...

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

A procedure to measure the bulk lifetime (&#62;100 &#181;sec) of silicon wafers by temporarily attaining a very high level of surface passivation when immersing the wafers in hydrofluoric acid (HF) is presented. By this procedure three critical steps are required to attain the bulk lifetime. Firstly, prior to immersing silicon wafers into HF, they are chemically cleaned and subsequently etched in 25% tetramethylammonium hydroxide. Secondly, the chemically treated wafers are then placed into a large plastic container filled with a mixture of HF and hydrochloric acid, and then centered over an inductive coil for photoconductance (PC) measurements. Thirdly, to inhibit surface recombination and measure the bulk lifetime, the wafers are illuminated at 0.2 suns for 1 min&#160;using a halogen lamp, the illumination is switched off, and a PC measurement is immediately taken. By this procedure, the characteristics of bulk silicon defects can be accurately determined. Furthermore, it is anticipated that a sensitive RT surface passivation technique will be imperative for examining bulk silicon defects when their concentration is low (&#60;1012 cm-3).

A RT liquid surface passivation technique to investigate the recombination activity of bulk silicon defects is described. For the technique to be successful, three critical steps are required: (i) chemical cleaning and etching of silicon, (ii) immersion of silicon in 15% hydrofluoric acid and (iii) illumination for 1 min.

光增强氢氟酸钝化：一个敏感的技术检测散装硅缺陷

A procedure to measure the bulk lifetime (&#62;100 &#181;sec) of silicon wafers by temporarily attaining a very high level of surface passivation when ...

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices have used devices prepared by spin coating, a process that is not amenable to large-scale fabrication. This mismatch in device fabrication makes it difficult to translate quantitative results obtained in the laboratory to the commercial level, making optimization difficult. Using a mini-slot die coater, this mismatch can be resolved by translating the commercial process to the laboratory and characterizing the structure formation in the active layer of the device in real time and in situ as films are coated onto a substrate. The evolution of the morphology was characterized under different conditions, allowing us to propose a mechanism by which the structures form and grow. This mini-slot die coater offers a simple, convenient, material efficient route by which the morphology in the active layer can be optimized under industrially relevant conditions. The goal of this protocol is to show experimental details of how a solar cell device is fabricated using a mini-slot die coater and technical details of running in situ structure characterization using the mini-slot die coater.

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Here, we present a protocol to fabricate organic thin film solar cells using a mini-slot die coater and related in-line structure characterizations using synchrotron scattering techniques.

散装异质结太阳能电池的印刷和制作<em&gt;原位</em&gt;形态特征

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices ...

Digital Printing of Titanium Dioxide for Dye Sensitized Solar Cells

Silicon solar cell manufacturing is an expensive and high energy consuming process. In contrast, dye sensitized solar cell production is less environmentally damaging with lower processing temperatures presenting a viable and low cost alternative to conventional production. This paper further enhances these environmental credentials by evaluating the digital printing and therefore additive production route for these cells. This is achieved here by investigating the formation and performance of a metal oxide photoelectrode using nanoparticle sized titanium dioxide. An ink-jettable material was formulated, characterized and printed with a piezoelectric inkjet head to produce a 2.6 &#181;m thick layer. The resultant printed layer was fabricated into a functioning cell with an active area of 0.25 cm2 and a power conversion efficiency of 3.5%. The binder-free formulation resulted in a reduced processing temperature of 250 &#176;C, compatible with flexible polyamide substrates which are stable up to temperatures of 350 &#730;C. The authors are continuing to develop this process route by investigating inkjet printing of other layers within dye sensitized solar cells.

This paper investigates the suitability of inkjet printing for the manufacturing of dye-sensitized solar cells. A binder-free TiO2 nanoparticle ink was formulated and printed onto a FTO glass substrate. The printed layer was fabricated into a cell with an active area of 0.25 cm2 and an efficiency of 3.5%.

钛白粉用于染料敏化太阳能电池的数码印刷

Silicon solar cell manufacturing is an expensive and high energy consuming process. In contrast, dye sensitized solar cell production is less ...

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Here, we demonstrate the incorporation of monovalent cation additives into CH3NH3PbI3 perovskite in order to adjust the optical, excitonic, and electrical properties. The possibility of doping was investigated by adding monovalent cation halides with similar ionic radii to Pb2+, including Cu+, Na+, and Ag+. A shift in the Fermi level and a remarkable decrease of sub-bandgap optical absorption, along with a lower energetic disorder in the perovskite, was achieved. An order-of-magnitude enhancement in the bulk hole mobility and a significant reduction of transport activation energy within an additive-based perovskite device was attained. The confluence of the aforementioned improved properties in the presence of these cations led to an enhancement in the photovoltaic parameters of the perovskite solar cell. An increase of 70 mV in open circuit voltage for AgI and a 2 mA/cm2 improvement in photocurrent density for NaI- and CuBr-based solar cells were achieved compared to the pristine device. Our work paves the way for further improvements in the optoelectronic quality of CH3NH3PbI3 perovskite and subsequent devices. It highlights a new avenue for investigations on the role of dopant impurities in crystallization and controls the electronic defect density in perovskite structures.

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Here, we present a protocol to adjust the properties of solution-processed CH3NH3PbI3 through the incorporation of monovalent cation additives in order to achieve highly efficient perovskite solar cells.

CH的单价阳离子兴奋剂<sub&gt; 3</sub&gt; NH<sub&gt; 3</sub&gt;碘化铅<sub&gt; 3</sub&gt;对钙钛矿型高效太阳能电池

Here, we demonstrate the incorporation of monovalent cation additives into CH3NH3PbI3 perovskite in order to adjust the optical, excitonic, and electrical ...

Challenges in Rheological Characterization of Highly Concentrated Suspensions &#8212; A Case Study for Screen-printing Silver Pastes

A comprehensive rheological characterization of highly concentrated suspensions or pastes is mandatory for a targeted product development meeting the manifold requirements during processing and application of such complex fluids. In this investigation, measuring protocols for a conclusive assessment of different process relevant rheological parameters have been evaluated. This includes the determination of yield stress, viscosity, wall slip velocity, structural recovery after large deformation and elongation at break as well as tensile force during filament stretching.
The importance of concomitant video recordings during parallel-plate rotational rheometry for a significant determination of rheological quantities is demonstrated. The deformation profile and flow field at the sample edge can be determined using appropriate markers. Thus, measurement parameter settings and plate roughness values can be identified for which yield stress and viscosity measurements are possible. Slip velocity can be measured directly and measuring conditions at which plug flow, shear banding or sample spillover occur can be identified clearly. 
Video recordings further confirm that the change in shear moduli observed during three stage oscillatory shear tests with small deformation amplitude in stage I and III but large oscillation amplitude in stage II can be directly attributed to structural break down and recovery. For the pastes investigated here, the degree of irreversible, shear-induced structural change increases with increasing deformation amplitude in stage II until a saturation is reached at deformations corresponding to the crossover of G' and G'', but the irreversible damage is independent of the duration of large amplitude shear. 
A capillary breakup elongational rheometer and a tensile tester have been used to characterize deformation and breakup behavior of highly filled pastes in uniaxial elongation. Significant differences were observed in all experiments described above for two commercial screen-printing silver pastes used for front side metallization of Si-solar cells.

Challenges in Rheological Characterization of Highly Concentrated Suspensions &amp;#8212; A Case Study for Screen-printing Silver Pastes

A protocol for a robust and application relevant rheological characterization of highly concentrated suspensions is presented. Silver pastes used for screen-printing application in solar cell production are employed as model systems.

挑战流变特性高度集中悬架 - 为例进行丝网印刷银浆

A comprehensive rheological characterization of highly concentrated suspensions or pastes is mandatory for a targeted product development meeting the ...

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for Cu(In,Ga)Se2 Solar Cells

The levelized cost of electricity (LCOE) of photovoltaic (PV) systems is determined by, among other factors, the PV module reliability. Better prediction of degradation mechanisms and prevention of module field failure can consequently decrease investment risks as well as increase the electricity yield. An improved knowledge level can for these reasons significantly decrease the total costs of PV electricity. 
In order to better understand and minimize the degradation of PV modules, the occurring degradation mechanisms and conditions should be identified. This should preferably happen under combined stresses, since modules in the field are also simultaneously exposed to multiple stress factors. Therefore, two 'Combined Stress test with in situ measurement' setups have been designed and constructed. These setups allow the simultaneous use of humidity, temperature, illumination, and electrical biases as independently controlled stress factors on solar cells and minimodules. The setups also allow real-time monitoring of the electrical properties of these samples. This protocol presents these setups and describes the experimental possibilities. Moreover, results obtained with these setups are also presented: various examples about the influence of both deposition and degradation conditions on the stability of thin film Cu(In,Ga)Se2 (CIGS) as well as Cu2ZnSnSe4 (CZTS) solar cells are described. Results on the temperature dependency of CIGS solar cells are also presented.

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for CuIn,GaSe2 Solar Cells

Two &#39;Combined Stress test with in situ measurement&#39; setups, which allow real-time monitoring of accelerated degradation of solar cells and modules, were designed and constructed. These setups allow the simultaneous use of humidity, temperature, electrical biases, and illumination as independently controlled stress factors. The setups and various experiments executed are presented.

就地太阳能电池和模块加速性能退化的监测: 铜 (in, Ga) Se2太阳能电池的实例研究

The levelized cost of electricity (LCOE) of photovoltaic (PV) systems is determined by, among other factors, the PV module reliability. Better prediction ...