Silicon Wafer Cleaning and Phosphorus Diffusion into the Silicon Substrate
3:08
SiNx Coating by Plasma-Enhanced Chemical Vapor Deposition (PECVD), GaP Growth by Molecular Beam Epitaxy (MBE), and Wet Etching of Back n+ and SiNx Layers
6:01
Hole-Selective Contact Formation on the Bare Si Side and External Contact Formation on the GaP Side
8:17
Results: Characterization of the GaP/Si Heterojunction Devices
10:11
Conclusion
副本
This method can tell, answer key questions in stratified silicon integrated solar cell fabrication about how to maintain a high silicon bulk lifetime during the growth. The main advantages of this process are that we can achieve a long silicon bul
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Here, we present a protocol to develop high-performance GaP/Si heterojunction solar cells with a high Si minority-carrier lifetime.
