the-effect-anodization-parameters-on-aluminum-oxide-dielectric-layer

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Aluminum-oxide (Al2O3) is a low cost, easily processable and high dielectric constant insulating material that is particularly appropriate for use as the ...

Bangor University

Depth profile analysis of perovskite absorber layers deposited onto glass substrates is investigated by radiofrequency pulsed glow discharge - time of flight mass spectrometry (rf-PGD-ToFMS). Elemental depth profiles obtained for perovskite films fabricated using a double-step deposition route with different precursors (methylammonium iodide and PbI, PbCl or PbBr) show varying distribution of the principle components depending on the precursors employed. Furthermore, the results show that rf-PGD-ToFMS allows to identify traces of residue solvent used in the initial film preparation (dimethyl sulphoxide or dimethylformamide) and to identify differences produced by film thickness and oxygen uptake caused by exposure to ambient conditions. The approach also enables inspection of the differences in elemental diffusion and the degradation processes. By using rf-PGD-ToFMS, no ultra-high-vacuum is needed for processing and rapid analysis of absorber films can be obtained in less than 40 s. The demonstration of such powerful analytical technique for obtaining depth profile information could enable groups in the field to better optimize processing conditions and enhance stability.

Rapid evaluation of different perovskite absorber layers through the application of depth profile analysis using glow discharge - Time of flight mass spectrometry.

A report of transparent and conducting silver nanowires (AgNWs) that produce remarkable electrical performance, surface planarity and environmental stability is given. This research presents an innovative process that relies on three sequential steps, which are roll-to-roll (R2R) compatible: thermal embossing, infrared sintering and plasma treatment. This process leads to the demonstration of a conductive film with a sheet resistance of 2.5 Ω sq-1 and high transmittance, thus demonstrating the highest reported figure-of-merit in AgNWs to date (FoM = 933). A further benefit of the process is that the surface roughness is substantially reduced compared to traditional AgNW processing techniques. The consideration of the long-term stability is given by developing an accelerated life test process that simultaneously stresses the applied bias and temperature. Regression line fitting shows that a ∼150-times improvement in stability is achieved under 'normal operational conditions' when compared to traditionally deposited AgNW films. X-ray photoelectron spectroscopy (XPS) is used to understand the root cause of the improvement in long-term stability, which is related to reduced chemical changes in the AgNWs.

High performing AgNW transparent conducting electrodes with a sheet resistance of 2.5 Ω Sq based upon a roll-to-roll compatible post-processing technique.

Correction for 'High performing AgNW transparent conducting electrodes with a sheet resistance of 2.5 Ω Sq-1 based upon a roll-to-roll compatible post-processing technique' by D. Kumar et al., Nanoscale, 2019, DOI: 10.1039/c8nr07974a.

Correction: High performing AgNW transparent conducting electrodes with a sheet resistance of 2.5 Ω Sq based upon a roll-to-roll compatible post-processing technique.

The present study reports a two-level multivariate analysis to optimize the production of anodized aluminum oxide (AlO) dielectric films for zinc oxide thin-film transistors (TFTs). Fourteen performance parameters were measured and analysis of variance (ANOVA) of the combined responses has been applied to identify how the AlO dielectric fabrication process influences the electrical properties of the TFTs. Using this approach, the levels for the manufacturing factors to achieve optimal overall device performance have been identified and ranked. The cross-checked analysis of the TFT performance parameters demonstrated that the appropriate control of the anodization process can have a higher impact on TFT performance than the use of traditional methods of surface treatment of the dielectric layer. Flexible electronics applications are expected to grow substantially over the next 10 years. Given the complexity and challenges of new flexible electronics components, this "multivariate" approach could be adopted more widely by the industry to improve the reliability and performance of such devices.

Jeff Kettle

Scholl of Electronic Engineering

Bangor University

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Jeff Kettle

.css-o250i3{font-size:18px;font-family:Open Sans,sans-serif;line-height:21.6px;}Scholl of Electronic Engineering

Bangor University

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Scholl of Electronic Engineering