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Jeff Kettle

Scholl of Electronic Engineering

Bangor University

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PUBLICATIONS

Rapid evaluation of different perovskite absorber layers through the application of depth profile analysis using glow discharge - Time of flight mass spectrometry.

Talanta Jan, 2019 | Pubmed ID: 30348396

High performing AgNW transparent conducting electrodes with a sheet resistance of 2.5 Ω Sq based upon a roll-to-roll compatible post-processing technique.

Nanoscale Mar, 2019 | Pubmed ID: 30775736

Correction: High performing AgNW transparent conducting electrodes with a sheet resistance of 2.5 Ω Sq based upon a roll-to-roll compatible post-processing technique.

Nanoscale 03, 2019 | Pubmed ID: 30855062

Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis.

ACS combinatorial science 05, 2019 | Pubmed ID: 30892872

INSTITUTIONS

Bangor University

JOVE ARTICLES

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Tiago C. Gomes^*,1,

Dinesh Kumar^*,2,

Neri Alves^*,1,

Jeff Kettle^*,2,

Lucas Fugikawa-Santos^*,3

¹School of Technology and Sciences, São Paulo State University - UNESP,

²Scholl of Electronic Engineering, Bangor University,

³Institute of Geosciences and Exact Sciences, São Paulo State University - UNESP

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Jeff Kettle

.css-o250i3{font-size:18px;font-family:Open Sans,sans-serif;line-height:21.6px;}Scholl of Electronic Engineering

Bangor University

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Scholl of Electronic Engineering