electric-field-control-electronic-states-ws2-nanodevices-electrolyte

Electric-field Control of Electronic States in WS<sub>2</sub> Nanodevices by Electrolyte Gating

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape ...

Osaka University

Max Planck Institute for Solid State Research

When controlling electronic properties of bulk materials, we usually assume that the basic crystal structure is fixed. However, in two-dimensional (2D) materials, atomic structure or polymorph is attracting growing interest as a controlling parameter to functionalize their properties. Various polymorphs can exist in transition metal dichalcogenides (TMDCs) from which 2D materials are generated, and polymorphism has drastic impacts on the electronic states. Here we report the discovery of an unprecedented polymorph of a TMDC 2D material. By mechanical exfoliation, we made thin flakes from a single crystal of 2Ha-type tantalum disulfide (TaS), a metallic TMDC with a charge-density-wave (CDW) phase. Microbeam X-ray diffraction measurements and electrical transport measurements indicate that thin flakes possess a polymorph different from any one known in TaSbulk crystals. Moreover, the flakes with the unique polymorph displayed the dramatically enhanced CDW ordering temperature. The present results suggest the potential existence of diverse structural and electronic phases accessible only in 2D materials.

Extended Polymorphism of Two-Dimensional Material.

The spontaneous Hall effect driven by the quantum Berry phase (which serves as an internal magnetic flux in momentum space) manifests the topological nature of quasiparticles and can be used to control the information flow, such as spin and valley. We report a Hall effect of excitons (fundamental composite particles of electrons and holes that dominate optical responses in semiconductors). By polarization-resolved photoluminescence mapping, we directly observed the Hall effect of excitons in monolayer MoSand valley-selective spatial transport of excitons on a micrometre scale. The Hall angle of excitons is found to be much larger than that of single electrons in monolayer MoS(ref. ), implying that the quantum transport of the composite particles is significantly affected by their internal structures. The present result not only poses a fundamental problem of the Hall effect in composite particles, but also offers a route to explore exciton-based valleytronics in two-dimensional materials.

Exciton Hall effect in monolayer MoS.

Electric field-induced p-n junctions are often used to realize peculiar functionalities in various materials. This method can be applied not only to conventional semiconductors but also to carbon nanotubes, graphene, and organic semiconductors to which the conventional chemical doping method is difficult to apply. Transition-metal dichalcogenides (TMDs) are one of such materials where the field-induced p-n junctions play crucial roles in realizing solar cell and light-emitting diode operations as well as circularly polarized electroluminescence. Although the field-induced p-n junction is a well-established technique, many of its physical properties are left to be understood because their doping mechanism is distinct from that of conventional p-n junctions. Here we report a direct electrical measurement of the potential variation along the field-induced p-n junction using multiple pairs of voltage probes. We detected the position of the junction, estimated the built-in potential, and monitored the effect of the bias voltage. We found that the built-in potential becomes negative under a forward bias voltage range where field-induced TMD p-n junctions have been operated as light-emitting diodes. This feature well reproduced the circularly polarized electroluminescence from the WSep-n junction, indicating that the present observation provides a useful background for understanding and functionalizing field-induced p-n junctions.

Potential Profile of Stabilized Field-Induced Lateral p-n Junction in Transition-Metal Dichalcogenides.

As a follow-up of our previous work on pressure-induced metallization of the 2H_{c}-MoS_{2} [Chi et al., Phys. Rev. Lett. 113, 036802 (2014)PRLTAO0031-900710.1103/PhysRevLett.113.036802], here we extend pressure beyond the megabar range to seek after superconductivity via electrical transport measurements. We found that superconductivity emerges in the 2H_{a}-MoS_{2} with an onset critical temperature T_{c} of ca. 3 K at ca. 90 GPa. Upon further increasing the pressure, T_{c} is rapidly enhanced beyond 10 K and stabilized at ca. 12 K over a wide pressure range up to 220 GPa. Synchrotron x-ray diffraction measurements evidenced no further structural phase transition, decomposition, and amorphization up to 155 GPa, implying an intrinsic superconductivity in the 2H_{a}-MoS_{2}. DFT calculations suggest that the emergence of pressure-induced superconductivity is intimately linked to the emergence of a new flat Fermi pocket in the electronic structure. Our finding represents an alternative strategy for achieving superconductivity in 2H-MoS_{2} in addition to chemical intercalation and electrostatic gating.

Yijin Zhang

Institute of Scientific and Industrial Research

Osaka University

Electric-field Control of Electronic States in WS₂ Nanodevices by Electrolyte Gating

Yijin Zhang

.css-o250i3{font-size:18px;font-family:Open Sans,sans-serif;line-height:21.6px;}Institute of Scientific and Industrial Research

Osaka University

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Institute of Scientific and Industrial Research

Electric-field Control of Electronic States in WS₂ Nanodevices by Electrolyte Gating