Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb ImpuritiesHan Sae Jung 1,2, Hsin-Zon Tsai 1, Dillon Wong 1, Chad Germany 1, Salman Kahn 1, Youngkyou Kim 1,3, Andrew S. Aikawa 1, Dhruv K. Desai 1, Griffin F. Rodgers 1, Aaron J. Bradley 1, Jairo Velasco Jr. 1, Kenji Watanabe 4, Takashi Taniguchi 4, Feng Wang 1,5,6, Alex Zettl 1,5,6, Michael F. Crommie 1,5,6
1Department of Physics, University of California at Berkeley, 2Department of Chemistry, University of California at Berkeley, 3Department of Chemical and Biomolecular Engineering, University of California at Berkeley, 4National Institute for Materials Science (Japan), 5Materials Sciences Division, Lawrence Berkeley National Laboratory, 6Kavli Energy NanoSciences Institute, University of California at Berkeley and Lawrence Berkeley National Laboratory
This paper details the fabrication process of a gate-tunable graphene device, decorated with Coulomb impurities for scanning tunneling microscopy studies. Mapping the spatially dependent electronic structure of graphene in the presence of charged impurities unveils the unique behavior of its relativistic charge carriers in response to a local Coulomb potential.
