fabrication-uniform-nanoscale-cavities-via-silicon-direct-wafer

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Measurements of the heat capacity and superfluid fraction of confined 4He have been performed near the lambda transition using lithographically patterned ...

NASA Goddard Space Flight Center

We have measured the heat capacity of (3)He-(4)He mixtures confined in films of thickness 48.3 and 986.9 nm. The confinement is defined by direct bonding of two silicon wafers. The heat capacity is measured using an ac technique and then transformed to correct for exponent renormalization effects. The data address the expected universal critical behavior along the lambda line as function of (3)He concentration. We discuss the results of several analyses of the data, and we show that a universal collapse can be achieved for all the mixtures. However, this is on a locus which differs from that of the pure system. An alternative analysis is also presented which yields collapse of all the data under certain assumptions. We believe these data are the first to test universality of finite-size scaling for the specific heat along a locus of transitions.

Mark O. Kimball

Cryogenics and Fluids Branch

NASA Goddard Space Flight Center

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Mark O. Kimball

.css-o250i3{font-size:18px;font-family:Open Sans,sans-serif;line-height:21.6px;}Cryogenics and Fluids Branch

NASA Goddard Space Flight Center

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Cryogenics and Fluids Branch