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One-step fabrication method for obtaining freestanding epitaxial double heterostructure is presented. This approach could achieve ZnO coverage with a higher number density than that of the epitaxial single heterostructure, leading to a piezoelectric nanogenerator with an increased output electrical performance.
Well-aligned ZnO nanostructures have been intensively studied over the last decade for remarkable physical properties and enormous applications. Here, we describe a one-step fabrication technique to synthesis freestanding ZnO nanorod/graphene/ZnO nanorod double heterostructure. The preparation of the double heterostructure is performed by using thermal chemical vapor deposition (CVD) and preheating hydrothermal technique. In addition, the morphological properties were characterized by using the scanning electron microscopy (SEM). The utility of freestanding double heterostructure is demonstrated by fabricating the piezoelectric nanogenerator. The electrical output is improved up to 200% compared to that of a single heterostructure owing to the coupling effect of the piezoelectricity between the arrays of ZnO nanorods on the top and bottom of graphene. This unique double heterostructure have a tremendous potential for applications of electrical and optoelectrical devices where the high number density and specific surface area of nanorod are needed, such as pressure sensor, immuno-biosensor and dye-sensitized solar cells.
Recently, the portable and wearable electronics devices became an essential element for a comfortable life owing to the nanotechnology development, which results in the tremendous demands for a power source in the range of microwatt to milliwatt. Considerable approaches for the power source of portable and wearable devices have been achieved by the renewable energy, including solar energy 1,2, thermal 3,4 and mechanical source 5,6. Piezoelectric nanogenerator have been intensively studied as one of possible candidate for energy harvesting device from environments, such as rustling the leaf 7, sound wave 8 and move....
1. Chemical Vapor Deposition (CVD) Growth of Single Layered Graphene
Note: The graphene used in this study was grown on copper (Cu) foil using the thermal chemical vapor deposition (CVD) technique (Figure 1A). Growth is uniform over an area of 2 cm x 10 cm for this system.
The scanning electron microscopy (SEM) images shown in Figure 6 present the morphologies of hydrothermally grown ZnO nanorods. The preheating hydrothermal technique can result in two different nanostructures depending on the growth time. Figure 6A shows a typical image of ZnO nanorod on graphene/PET substrate at the growth time of 5 hr. In contrast, the image shown in Figure 6B indicates that the growth of ZnO nanorod at the growth time o.......
Please note that the high quality (>99.8%, annealed) of Cu foil should be considered as a substrate for successful growth of single layer graphene. Otherwise, the single layer graphene is not uniformly grown over the Cu foil, leading to dramatically decrease in conductivity of graphene. A 1 hr annealing at high temperature would help the improvement of the Cu foil crystallinity as well as removal of any contaminants from the Cu foil.
The growth of ZnO nanorod depends on the conditions for .......
The authors declare that they have no competing financial interests.
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No.2014R1A2A1A11051146). This work was also supported by National Research Foundation of Korea Grant funded by the Korean Government (NRF-2014R1A1A2058350).
....Name | Company | Catalog Number | Comments |
Cu foil | Alfa Aesar | 13382 | |
poly(methyl methacrylate) (PMMA) | Aldrich | 182230 | |
zinc nitrate hexahydrate | Sigma-Aldrich | 228732 | |
hexamethylenetetramine (HMT) | Sigma-Aldrich | 398160 | |
polyethylenimine (PEI) | Sigma-Aldrich | 408719 | |
indium tin oxide (ITO) coated PET | Aldrich | 639303 | |
Silicone Elastomer Kit | Dow Corning | Sylgard 184 a, b | |
Nickel Etchant Type1 | Transene Company | 41212 |
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