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Method Article
A workflow for comprehensive micro-characterization of active optical devices is outlined. It contains structural as well as functional investigations by means of CT, LM and SEM. The method is demonstrated for a white LED which can be still be operated during characterization.
In failure analysis, device characterization and reverse engineering of light emitting diodes (LEDs), and similar electronic components of micro-characterization, plays an important role. Commonly, different techniques like X-ray computed tomography (CT), light microscopy (LM) and scanning electron microscopy (SEM) are used separately. Similarly, the results have to be treated for each technique independently. Here a comprehensive study is shown which demonstrates the potentials leveraged by linking CT, LM and SEM. In depth characterization is performed on a white emitting LED, which can be operated throughout all characterization steps. Major advantages are: planned preparation of defined cross sections, correlation of optical properties to structural and compositional information, as well as reliable identification of different functional regions. This results from the breadth of information available from identical regions of interest (ROIs): polarization contrast, bright and dark-field LM images, as well as optical images of the LED cross section in operation. This is supplemented by SEM imaging techniques and micro-analysis using energy dispersive X-ray spectroscopy.
This article demonstrates the potential and advantages of a combination of X-ray computed tomography (CT) with correlative light and electron microscopy (CLEM) for the exemplary in depth characterization of light emitting diodes (LED). With this technique it is possible to plan the micro preparation of the LED in such a fashion that while a cross section can be imaged microscopically the electrical functionality is preserved in the remainder of the specimen. The procedure has several unique features: firstly, the planned micro preparation by aid of the rendered volume of the entire sample obtained by CT; secondly, the observation of the LED by light microscopy (LM) with the complete variety of imaging techniques available (bright and dark field, polarization contrast, etc.); thirdly, observation of the LED in operation by LM; fourthly, observation of identical regions with the full variety of electron microscopy imaging techniques comprising secondary electron (SE) and back scatter electron (BSE) imaging, as well as energy dispersive X-ray fluorescence spectroscopy (EDX).
LEDs for illumination applications are designed to emit white light, although in certain applications color variability may be favorable. This broad emission cannot be achieved by emission from one compound semiconductor, since LEDs emit radiation in a narrow spectral band (circa 30 nm full width half maximum (FWHM)). Therefore white LED light is commonly generated by the combination a blue LED with phosphors which convert the short-wavelength radiation into broad emission over a large spectral range1. Color variable LED solutions usually make use of at least three primaries, which generally results in higher market prices.2
The use of either CT, LM or SEM is of course well established (e.g., in failure analysis for LEDs3-15), however the comprehensive and purposeful combination of all three techniques described here may offer new insights and will enable faster tracks towards meaningful characterization results.
From 3D microstructural analysis of the packaged device in CT the regions of interest (ROIs) can be identified and selected. With this non-destructive method, electrical connections can also be identified and considered for further preparation. The precise preparation of a 2D cross section allows investigations of the device in operation despite the destructive nature of this method. The cross section can now be characterized by CLEM16,17 which enables a very efficient and flexible characterization of identical ROIs with LM as well as SEM. By this approach, the advantages of both microscopy techniques can be combined. For example, a fast identification of ROIs in the LM is followed by high-resolution imaging in the SEM. But furthermore, the correlation of information from the LM (e.g., color, optical properties, particle distribution) with the visualization and analysis techniques of the SEM (e.g., particle size, surface morphology, element distribution) allows a deeper understanding of functional behavior and microstructure within a white LED.
1. Sample Preparation for X-ray Computed Tomography (CT)
2. CT Measurement Setup
3. Performance of CT Scan
NOTE: X-ray intensities may vary during the measurement. To compensate for these eventual fluctuations, a region of interest (ROI) window is placed where the X-rays will not interfere with the sample. This region is not affected by X-ray absorption through the sample, it is therefore the region with the highest measured intensity.
4. Reconstruction of Volume Information, Planning of Micro Preparation
5. Micro Preparation
6. LM Measurement Setup
7. LM Characterization
8. Sputter Coating
9. SEM Measurement Setup
10. SEM Analysis
11. Image Processing
The characterized LED is shown in Figure 1. It is a white emitting LED with a Chip size of 1 x 1 mm2 and a partially ceramic luminescent color converter. Gluing the LED in a slightly slanted position onto a carbon fiber bar avoids CT artifacts caused by sample symmetry (Figure 2). Results of the CT measurement allow for planning the position of the cross section of the sample, and ensure electrical operability after partial abrasion (Fi...
The advantages of this multimodal approach consist in the location-dependent correlation of the acquired data. The multimodal approach described here should be contrasted in subsequent analyses with each technique separately. For example, luminescence properties visible in LM can be linked to compositions as detected using SEM/EDS. The volume information obtained by CT can be extended with in depth analyses of cross-sections prepared in a targeted fashion. CT data also enable fast location of possible areas of interest i...
The authors have nothing to disclose.
The authors kindly acknowledge financial support from the "Akademische Gesellschaft Lippstadt" as well as from the "Ministerium für Innovation, Wissenschaft und Forschung des Landes Nordrhein-Westfalen". Photographs in Figures 1, 2 and 5 courtesy to Markus Horstmann, Hamm-Lippstadt University of Applied Sciences.
Name | Company | Catalog Number | Comments |
X-ray Computer Tomograph | General Electric | not applicable | type: nanotom s research edition |
acquisition software | General Electric | not applicable | phoenix Datos| x2 acquisition and corresponding manual |
reconstruction software | General Electric | not applicable | phoenix Datos| x2 acquisition and corresponding manual |
rendering software | Volume Graphics | not applicable | VGStudio Max 2.2 and corresponding manual |
grinder (manual) | Struers | 5296327 | Labopol 21 |
sample holder | Struers | 4886102 | UniForce |
grinder (automated) | Struers | 6026127 | Tegramin 25 |
epoxy resin/hardener | Struers | 40200030/40200031 | Epoxy fix resin / Epoxy fix hardener |
Ethanol | Struers | 950301 | Kleenol |
Light Microscope | Zeiss | not applicable | Axio Imager M2m |
Electron Microscope | Zeiss | not applicable | Sigma |
CLEM software | Zeiss | not applicable | Axio Vision SE64 Rel.4.9 and corresponding manual |
CLEM sample holder | Zeiss | 432335-9101-000 | Specimen holder CorrMic MAT Universal B |
SEM Adapter for CLEM sample holder | Zeiss | 432335-9151-000 | SEM Adapter for Specimen holder CorrMic MAT Universal B |
sputter coater | Quorum | not applicable | Q150TES |
EDS detector | Röntec | not applicable | X-Flash 1106 |
solder | Stannol | 535251 | type: HS10 |
LED | Lumileds | not applicable | LUXEON Rebel warm white, research sample |
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