This work was supported by the Ministry of Science and Technology, Taiwan, Republic of China through Grant No. 101-2113-M-001-006-MY3.

TCDAP 12 hazırlanması 1. <ol><li> Literatür prosedürleri takip ederek 13 TCDAP sentezlemek. </li><li> 340, 270 ayarlanmış üç sıcaklık bölgeleri ile, sıcaklık gradyanı süblime yöntemiyle TCDAP ürünün arıtılması ve 250 ° C, sırasıyla 10 -6 Torr 12,14 bir vakum basınç altında gerçekleştirilebilir. </li></ol> 2. TCDAP Fiziksel Buhar Transferi Kullanma (PVT) Sistem 14 Tek Kristal büyütün <ol><li> (1.2 sm bir çapı olan 15 cm uzunluğunda) (5 cm) bir teknenin bir ucunda TCDAP örnek koyun ve bir cam iç tüp içine tekne yük. </li><li> Daha uzun bir cam (83 cm uzunluğunda ve çapı 2 cm) tüpe iç tüp yükleyin ve açılış yaklaşık 17 cm kadar içeri itin. </li><li> (Uzun 60 cm ve çapı 2.5 cm) yatay bir rafa sabitlenmiş bir bakır boru içine uzun cam tüp yükleyin; Emin TCDAP tekne bir ısıtma bandı ar tarafından tanımlanan ısıtma alanının ortasında yer almaktadır olunbakır boru ound. </li><li> 30 cc / dk bir akış oranında helyum gazı ile PVT sistemi temizlemek ve daha sonra 310 ° C&#39;ye kadar ısıtma bandı ısıtmak için transformatör açmak; iki gün boyunca bu sıcaklıkta tutulur. </li><li> Oda sıcaklığına soğutma sistemi sonra, iç borudan kristalleri toplamak. </li></ol> 3. Cihaz İmalatı <ol><li> 30 dakika her biri için, sıra ile, bir şişe içerisine, 200 mikron kalınlığında şeffaf, önceden kesilmiş PET maddesi (2 cm x 1 cm) koyun ve deterjan solüsyonunda sonikasyon, iyonu giderilmiş su ve aseton ile temizleyin. Azot akışı ile alt-tabakanın kurutun. </li><li> PET maddesi üzerinde çift taraflı bant yerleştirin. </li><li> Bir stereomikroskop altında kristaller inceleyin. Cihaz imalat için ~ 5 mm x ~ 0.03 mm boyutlarında kristaller parlayan, kaliteli seçin. çift ​​taraflı bant PET substrat uzunluğunda bir iğne benzeri TCDAP kristal paralel yerleştirin ve sıkıca sabitleyin. </li><li> Bir stereomikroskop altında, wat uygulamakkaynak ve drenaj olarak hareket kristal iki ucundan uzanan bir çizgi (birkaç mm) bir mikrolitre şırınga iğnesi aracılığıyla-tabanlı bir kolloidal grafit. kurutun ve (0.6-1 mm tutmak) tüm kanal uzunluğunu belirlemek için bir optik mikroskop altında, iki grafit noktalar arasındaki mesafeyi ölçmek için kolloidal grafit için yaklaşık 30 dakika boyunca bekleyin. </li><li> mikroskobik slayt PET alt tabakayı düzeltmek için karbon iletken bant kullanın. depozisyon odasının piroliz tüpün sonuna slayt yerleştirin. </li><li> yalıtkan bir öncüsünün 0.5 g, [2.2] paracyclophane tartılır ve piroliz borusunun girişinin yakınına yerleştirin. </li><li> 10 -2 Torr bir vakum sistemini Pompa. 700 ° C arasında önceden belirlenmiş bir sıcaklığa tüpü merkezine yakın piroliz alanından önceden ısıtılması ve bu sıcaklıkta muhafaza. </li><li> 150 ° C [2.2] paracyclophane örneği ısıtın. öncüsünün buharlar piroliz bölgesi üzerinden geçecekpolimerize etmek için piroliz borusunun sonuna yoğunlaştığı monomerler, elde edildi. </li><li> piroliz / polimerizasyon reaksiyon 2 saat süre ile devam edelim. </li><li> sistemini soğumaya ve piroliz tüp numune almak. </li><li> tabakanın adım yüksekliklerinin ölçülmesi ve alt-tabaka, üreticinin talimatlarına göre bir profilometre ile tevdi dielektrik katman kalınlığını belirler. </li><li> Kapı elektrot olarak hizmet etmek için kristalin yukarıdaki dıelektrık katmanın arkasındaki çizgi bir mikrolitre şırınga iğnesi ile izopropanol-esaslı koloidal grafit uygulanır. </li></ol> 4. Aygıt Performans ölçün <ol><li> Bağlantı için altındaki elektrotlar ortaya koymak için kaynak / tahliye elektrot alanı üzerinde polimerik dielektrik film boyunca bir delik kesmek için neşter kullanın. </li><li> bir stand ve kelepçeler yardımıyla, temas analizör Elektrot probları getirmekkaynak / drenaj / kapı elektrotlar. üreticinin talimatlarına göre farklı kapı potansiyellerde IV özelliklerini kaydedin. Not: Burada, kapı potansiyelleri 15 V adımlarda 60 V -60 V ayarlanır. </li></ol> 5. Bükme Deneyler <ol><li> Farklı yarıçap (14.0 mm, 12.4 mm, 8.0 mm ve 5.8 mm) silindir etrafında esnek PET maddesi arkasını sarmak, gerilme durumunda özelliklerini ölçmek ve vakum bant ile dört taraftan silindire PET substrat düzeltmek için . </li><li> kaynak / drenaj / kapı elektrotlara probları bağlayın ve 4.2 açıklandığı gibi farklı kapı potansiyellerde IV özelliklerini ölçmek. </li><li> basınç halde ölçülmesi için, bir silindirin sonuna doğru PET maddesi ön tarafının yarısını sarmak, kristal / kaynak / drenaj / kapı elektrotlarının yapılmamış silindir bakacak ve bu yine de maruz kalır. Vakum bant (bkz silindirin PET substrat sabitleyin. 5 </strong&gt;). </li><li> kaynak / drenaj / kapı elektrotlara probları bağlayın ve 4.2 açıklandığı gibi farklı kapı potansiyellerde IV özelliklerini ölçmek. NOT: Cihaz yapısının enine kesit bir görünümüdür Şekil l&#39;de gösterilmiştir. 1. </li></ol>

<ol>
	<li>Sekitani, T., Zschieschang, U., Klauk, H., Someya, T. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Flexible+Organic+Transistors+and+Circuits+with+Extreme+Bending+Stability.">Flexible Organic Transistors and Circuits with Extreme Bending Stability.</a> Nat. Mater. 9, 1015-1022 (2010).</li><li>Yang, Y., Ruan, G., Xiang, C., Wang, G., Tour, J. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Flexible+Three-Dimensional+Nanoporous+Metal-Based+Energy+Devices.">Flexible Three-Dimensional Nanoporous Metal-Based Energy Devices.</a> J. Am. Chem. Soc. 136, 6187-6190 (2014).</li><li>Zhan, Y., Mei, Y., Zheng, L. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Materials+Capability+and+Device+Performance+in+Flexible+Electronics+for+the+Internet+of+Things.">Materials Capability and Device Performance in Flexible Electronics for the Internet of Things.</a> J. Mater. Chem. C. 2, 1220-1232 (2014).</li><li>Zhang, L., Wang, H., Zhao, Y., Guo, Y., Hu, W., Yu, G., Liu, Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Substrate-Free+Ultra-Flexible+Organic+Field-Effect+Transistors+and+Five-Stage+Ring+Oscillators.">Substrate-Free Ultra-Flexible Organic Field-Effect Transistors and Five-Stage Ring Oscillators.</a> Adv. Mater. 25, 5455-5460 (2013).</li><li>Jedaa, A., Halik, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Toward+Strain+Resistant+Flexible+Organic+Thin+Film+Transistors.">Toward Strain Resistant Flexible Organic Thin Film Transistors.</a> Appl. Phys. Lett. 95, (2009).</li><li>Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., Hosono, H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Room-Temperature+Fabrication+of+Transparent+Flexible+Thin-Film+Transistors+Using+Amorphous+Oxide+Semiconductors.">Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors.</a> Nature. 432, 488-492 (2004).</li><li>Sekitani, T., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Bending+Experiment+on+Pentacene+Field-Effect+Transistors+on+Plastic+Films.">Bending Experiment on Pentacene Field-Effect Transistors on Plastic Films.</a> Appl. Phys. Lett. 86, 073511 (2005).</li><li>Tseng, C. -. W., Huang, D. -. C., Tao, Y. -. T. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Organic+Transistor+Memory+with+a+Charge+Storage+Molecular+Double-Floating-Gate+Monolayer.">Organic Transistor Memory with a Charge Storage Molecular Double-Floating-Gate Monolayer.</a> ACS Appl. Mater. Interfaces. 7, 9767-9775 (2015).</li><li>Coropceanu, V., Cornil, J., da Silva Filjo, D. A., Olivier, Y., Silbey, R., Bredas, J. L. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Charge+Transport+in+Organic+Semiconductors.">Charge Transport in Organic Semiconductors.</a> Chem. Rev. 107, 926-952 (2007).</li><li>Briseno, A. L., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High-Performance+Organic+Single-Crystal+Transistors+on+Flexible+Substrates.">High-Performance Organic Single-Crystal Transistors on Flexible Substrates.</a> Adv. Mater. 18, 2320-2324 (2006).</li><li>Tang, Q., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Organic+Nanowire+Crystals+Combing+Excellent+Device+Performance+and+Mechanical+Flexibility.">Organic Nanowire Crystals Combing Excellent Device Performance and Mechanical Flexibility.</a> Small. 7, 189-193 (2011).</li><li>Islam, M. M., Pola, S., Tao, Y. -. T. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High+Mobility+N-Channel+Single-Crystal+Field-Effect+Transistors+Based+on+5,7,12,14-Tetrachloro-6,13-Diazapentacene.">High Mobility N-Channel Single-Crystal Field-Effect Transistors Based on 5,7,12,14-Tetrachloro-6,13-Diazapentacene.</a> Chem. Commun. 47, 6356-6358 (2011).</li><li>Weng, S. Z., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Diazapentacene+Derivatives+as+Thin-Film+Transistor+Materials:+Morphology+Control+in+Realizing+High-Field-Effect+Mobility.">Diazapentacene Derivatives as Thin-Film Transistor Materials: Morphology Control in Realizing High-Field-Effect Mobility.</a> ACS Appl. Mater. Interfaces. 1, 2071-2079 (2009).</li><li>Kloc, C., Simpkins, P. G., Siegrist, T., Laudise, R. A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Physical+Vapor+Growth+of+Centimeter-Sized+Crystals+of+&#913;-Hexathiophene.">Physical Vapor Growth of Centimeter-Sized Crystals of &#913;-Hexathiophene.</a> J. Cryst. Growth. 182, 416-427 (1997).</li></ol>

The authors have nothing to disclose.

Bu deneyde, bir dizi parametre alan etkili hareketlilik başarılı ölçümünü etkiler. İlk olarak, tek kristal yeterince büyük özelliği ölçümü için bir alan etkili bir aygıt içine yerleştirilebilir olmalıdır. fiziksel buhar transferi (PVT) yöntemi büyük kristaller yetiştirilebilir sağlayan biridir. sıcaklık ve taşıyıcı gaz akış oranının ayarlanması ile, boyutları kristallerin yarım santimetre elde edilebilir için. İkinci olarak, tek bir kristal seçimi önemlidir. Bir belirgin tek ...

Sensörler, görüntüler ve giyilebilir elektronik olarak yumuşak elektronik cihazlar, şu anda tasarlanmış olması ve daha aktif araştırılmış ve birçok hatta son yıllarda 1,2,3,4 piyasadaki başlatılmıştır vardır. Organik yarı iletken malzemeler, düşük geliştirme maliyeti dahil kendi içsel avantajları, bu elektronik cihazlarda önemli bir rol oynamaktadır, yetenek özellikle onların esneklik inorganik yarı iletkenler 5,6 ile karşılaştırıldığında, çözelti içinde veya düşük sıcaklıklarda hazırlanan ve olmak. Bu elektronik için özel bir göz onlar sık ​​sık eğilme tabi olacaktır. Bükme bileşenleri ve cihaz içinde malzeme yük getirmektedir. Bu tür cihazlar bükülmüş olarak istikrarlı ve tutarlı bir performans gereklidir. Transistörler bu elektronik çoğunda önemli bir bileşenidir, ve eğilme altında performans ilgi çekicidir. Bir dizi çalışmada, organik t bükerek bu performans sorunu ele alınmıştırhin filmi 7,8 transistörleri. eğilme üzerine iletkenlik değişiklikler bir polikristal ince film hububat arasındaki boşluk değişiklikler atfedilebilir olsa da, sormak için daha temel bir soru iletkenliği bükme üzerine tek kristal içinde değişebilir olup olmadığıdır. Organik moleküller arasındaki yük iletim molekülleri ile nötr ve yüklü Devletleri 9 arasındaki iç yer tadilatı enerji arasındaki elektronik bağlantı kuvvetle bağlı olduğu kabul edilmektedir. Elektronik bağlantı komşu moleküller arasında sınır moleküler orbitallerin örtüşmesi uzaklığa son derece duyarlıdır. İyi sıralı kristal bükme gerginlik tanıtır ve kristal içindeki moleküllerin göreli konumunu değiştirebilir. Bu, tek bir kristal bazlı alan etkili transistor ile test edilebilir. Bir rapor 10 bükme üzerine kristal kalınlığının etkisini araştırmak için esnek bir alt tabaka üzerine rubrene tek kristalleri kullanılır. dedüz alt-tabaka hazırlanmıştır bakır falosiyanin nanotel kristalleri ile mengene 11 büküm sırasında yüksek bir mobiliteye sahiptir gösterildi. Ancak, farklı yönlere bir FET cihaz bent için özellikleri araştırılmış değil. Molekül 5,7,12,16-tetrakloro-6,13-diazapentacene (TCDAP) bir N-tipi yarı iletken malzeme 12&#39;dir. TCDAP kristal 3,911 Å bir hücre uzunluğunda birim hücrenin bir eksen boyunca komşu moleküller arasında kaymıştır π-π istifleme ile monoklinik ambalaj motifi vardır. Kristal uzun iğneler vermek için bu ambalaj doğrultusu boyunca büyür. Bu yönde ölçülen maksimum n-tipi alan etkili hareketlilik cm2 / V · sn 3.39 ulaştı. kıtır ve kırılgan olan çok organik kristaller farklı olarak, TCDAP kristal son derece esnek olduğu bulunmuştur. Bu çalışmada, iletken bir kanal olarak TCDAP kullanılan ve esnek bir alt tabaka o tek kristal alan etkili transistör hazırlananF polietilen tereftalat (PET). Hareketlilik (aşağı) veya (yukarı) kapı / dielektrik tarafına doğru bükülmüş esnek alt tabaka doğru cihaz bükülmüş, düz bir tabaka üzerinde kristal ölçüldü. IV veri komşu arasında istifleme / bağlantı mesafesi değişikliklere dayalı analiz edildi moleküller.

<table><tbody><tr><td>Colloidal Graphite (water-based)</td><td>TED PELLA,INC</td><td>NO.16053</td><td></td></tr><tr><td>Colloidal Graphite (IPA-based)</td><td>TED PELLA,INC</td><td>NO.16051</td><td></td></tr><tr><td>[2.2]Paracyclophane, 99%</td><td>Alfa Aesar</td><td>1633-22-3</td><td></td></tr><tr><td>polyethylene terephthalate</td><td>Uni-Onward</td><td></td><td></td></tr><tr><td>Mini-Mite 1,100 &amp;deg;C Tube Furnaces (Single Zone)</td><td>Thermo Scientific</td><td>TF55030A</td><td></td></tr><tr><td>Agilent 4156C Precision Semiconductor Parameter</td><td>Keysight</td><td>HP4156</td><td></td></tr></tbody></table>

effect of bending on the electrical characteristics of flexible organic single crystal-based field-effect transistors

organik yarı iletken şarj taşıma gayet elektronik kaplin etkiler kristal, moleküler ambalaj üzerinde son derece bağlıdır. Ancak, organik yarı iletkenler kritik bir rol oynadığı yumuşak elektronik, cihazlar bükük olacak, art arda veya katlanmış. kristal paket ve bu nedenle yük taşıma bükülme etkisi cihazının performansı için çok önemlidir. Bu yazıda, alan etkili transistör yapılandırmasında 5,7,12,16-tetrakloro-6,13-diazapentacene (TCDAP) tek bir kristal bükmeye ve kristal bükme üzerine tekrarlanabilir IV özelliklerini elde etmek için protokol açıklar. Sonuçlar, şarj hareketlilik neredeyse geri dönüşümlü henüz zıt eğilimler esnek bir alt tabaka sonuçlarına hazırlanmış bir alan etkili transistör eğme yönüne bağlı olarak ortaya koymaktadır. Cihaz üst geçit / dielektrik katman (yukarı, basınç durumu) doğru eğildi ve olmak zaman azalır hareketlilik artarnt kristal / substrat tarafında (aşağı, çekme durum) doğru. eğrilik bükülme etkisi de daha yüksek bir bükülme eğriliği elde edilen daha büyük bir hareket değişikliği gözlenmiştir. Bu olduğu ileri sürülmektedir böylece elektronik kavrama ve sonraki taşıyıcı taşıma yeteneğini etkileyen, bükme üzerine moleküller π-π mesafe değişir.

Tek kristal XRD analizi TCDAP bir eksen. Şekil boyunca ambalaj molekülleri ile uzun bir π sistemi olduğunu ortaya koymaktadır. 2, bir TCDAP kristal toz XRD ile tarama modelini gösterir. Keskin tepe noktalarının bir dizi kristalin toz sapması modeli karşılaştırılarak, yalnızca (0, k, ℓ) düzlemlerin ailesine tekabül gözlenir. Bu Şekil l&#39;de gösterildiği gibi, kristal yapısı yönlendirilmiştir olduğunu...

Watch this Scientific Journal Video about Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors at JoVE.com

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Bu el yazması, elektronik özellik ölçümü için işleyen bir cihazı korumak için organik bir tek kristal tabanlı alan etkili transistörün bükme işlemi anlatılmaktadır. sonuçlar, kristal moleküler aralık ve böylece esnek elektronik önemlidir şarj atlamalı oranı, eğilme nedenler değişir.

Esnek Organik Tek Kristal tabanlı Alan etkili Transistörler Elektrik Özelliklerine Bükme etkisi

The charge transport in an organic semiconductor depends highly on the molecular packing in the crystal, which influences the electronic coupling ...

effect-bending-on-electrical-characteristics-flexible-organic-single

Research

JoVE Journal

Engineering

8.0K Görüntüleme.  Academia Sinica.  Bu el yazması, elektronik özellik ölçümü için işleyen bir cihazı korumak için organik bir tek kristal tabanlı alan etkili transistörün bükme işlemi anlatılmaktadır. sonuçlar, kristal moleküler aralık ve böylece esnek elektronik önemlidir şarj atlamalı oranı, eğilme nedenler değişir. 

Video: Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Concurrent Quantitative Conductivity and Mechanical Properties Measurements of Organic Photovoltaic Materials using AFM

Organic photovoltaic (OPV) materials are inherently inhomogeneous at the nanometer scale. Nanoscale inhomogeneity of OPV materials affects performance of photovoltaic devices. Thus, understanding of spatial variations in composition as well as electrical properties of OPV materials is of paramount importance for moving PV technology forward.1,2 In this paper, we describe a protocol for quantitative measurements of electrical and mechanical properties of OPV materials with sub-100 nm resolution. Currently, materials properties measurements performed using commercially available AFM-based techniques (PeakForce, conductive AFM) generally provide only qualitative information. The values for resistance as well as Young's modulus measured using our method on the prototypical ITO/PEDOT:PSS/P3HT:PC61BM system correspond well with literature data. The P3HT:PC61BM blend separates onto PC61BM-rich and P3HT-rich domains. Mechanical properties of PC61BM-rich and P3HT-rich domains are different, which allows for domain attribution on the surface of the film. Importantly, combining mechanical and electrical data allows for correlation of the domain structure on the surface of the film with electrical properties variation measured through the thickness of the film.

Organic photovoltaic (OPV) materials are inherently inhomogeneous at the nanometer scale. Nanoscale inhomogeneity of OPV materials affects performance of photovoltaic devices. In this paper, we describe a protocol for quantitative measurements of electrical and mechanical properties of OPV materials with sub-100 nm resolution.

Eşzamanlı Sayısal İletkenlik ve AFM kullanarak Organik Fotovoltaik Malzemeler Mekanik Özellikleri Ölçümleri

Organic photovoltaic  (OPV) materials are inherently inhomogeneous at the nanometer scale. Nanoscale  inhomogeneity of OPV materials affects performance ...

Mühendislik

Strain Sensing Based on Multiscale Composite Materials Reinforced with Graphene Nanoplatelets

The electrical response of NH2-functionalized graphene nanoplatelets composite materials under strain was studied. Two different manufacturing methods are proposed to create the electrical network in this work: (a) the incorporation of the nanoplatelets into the epoxy matrix and (b) the coating of the glass fabric with a sizing filled with the same nanoplatelets. Both types of multiscale composite materials, with an in-plane electrical conductivity of ~10-3 S/m, showed an exponential growth of the electrical resistance as the strain increases due to distancing between adjacent functionalized graphene nanoplatelets and contact loss between overlying ones. The sensitivity of the materials analyzed during this research, using the described procedures, has been shown to be higher than commercially available strain gauges. The proposed procedures for self-sensing of the structural composite material would facilitate the structural health monitoring of components in difficult to access emplacements such as offshore wind power farms. Although the sensitivity of the multiscale composite materials was considerably higher than the sensitivity of metallic foils used as strain gauges, the value reached with NH2 functionalized graphene nanoplatelets coated fabrics was nearly an order of magnitude superior. This result elucidated their potential to be used as smart fabrics to monitor human movements such as bending of fingers or knees. By using the proposed method, the smart fabric could immediately detect the bending and recover instantly. This fact permits precise monitoring of the time of bending as well as the degree of bending.

The integration of conductive nanoparticles, such as graphene nanoplatelets, into glass fiber composite materials creates an intrinsic electrical network susceptible to strain. Here, different methods to obtain strain sensors based on the addition of graphene nanoplatelets into the epoxy matrix or as a coating on glass fabrics are proposed.

Grafen Nanoplatelets ile Ölçekli Kompozit Malzemeler Güçlendirilmiş dayanarak suşu Algılama

The electrical response of NH2-functionalized graphene nanoplatelets composite materials under strain was studied. Two different manufacturing methods are ...

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

The gastrointestinal tract is an example of barrier tissue that provides a physical barrier against entry of pathogens and toxins, while allowing the passage of necessary ions and molecules. A breach in this barrier can be caused by a reduction in the extracellular calcium concentration. This reduction in calcium concentration causes a conformational change in proteins involved in the sealing of the barrier, leading to an increase of the paracellular flux. To mimic this effect the calcium chelator ethylene glycol-bis(beta-aminoethyl ether)-N,N,N&#39;,N&#39;-tetra acetic acid (EGTA) was used on a monolayer of cells known to be representative of the gastrointestinal tract. Different methods to detect the disruption of the barrier tissue already exist, such as immunofluorescence and&#160;permeability assays. However, these methods are time-consuming and costly and not suited to dynamic or high-throughput measurements. Electronic methods for measuring barrier tissue integrity also exist for measurement of the transepithelial resistance (TER), however these are often costly and complex. The development of rapid, cheap, and sensitive methods is urgently needed as the integrity of barrier tissue is a key parameter in drug discovery and pathogen/toxin diagnostics. The organic electrochemical transistor (OECT) integrated with barrier tissue forming cells has been shown as a new device capable of dynamically monitoring barrier tissue integrity. The device is able to measure minute variations in ionic flux with unprecedented temporal resolution and sensitivity, in real time, as an indicator of barrier tissue integrity. This new method is based on a simple device that can be compatible with high throughput screening applications and fabricated at low cost.

The Organic Electrochemical Transistor is integrated with live cells and used to monitor ion flux across the gastrointestinal epithelial barrier. In this study, an increase in ion flux, related to disruption of tight junctions, induced by the presence of the calcium chelator EGTA (ethylene glycol-bis(beta-aminoethyl ether)-N,N,N',N'-tetra acetic acid), is measured.

Organik Elektrokimyasal Transistör Bariyer Doku bozulması ve Algılama

The gastrointestinal tract is an example of barrier tissue that provides a physical barrier against entry of pathogens and toxins, while allowing the ...

Biyomühendislik

Preparation of Liquid Crystal Networks for Macroscopic Oscillatory Motion Induced by Light

A strategy based on doped liquid crystalline networks is described to create mechanical self-sustained oscillations of plastic films under continuous light irradiation. The photo-excitation of dopants that can quickly dissipate light into heat, coupled with anisotropic thermal expansion and self-shadowing of the film, gives rise to the self-sustained deformation. The oscillations observed are influenced by the dimensions and the modulus of the film, and by the directionality and intensity of the light. The system developed offers applications in energy conversion and harvesting for soft-robotics and automated systems.
The general method described here consists of creating free-standing liquid crystalline films and characterizing the mechanical and thermal effects observed. The molecular alignment is achieved using alignment layers (rubbed polyimide), commonly used in the display manufacturing industry. To obtain actuators with large deformation, the mesogens are aligned and polymerized in a splay/bend configuration, i.e., with the director of the liquid crystals (LCs) going gradually from planar to homeotropic through the film thickness. Upon irradiation, the mechanical and thermal oscillations obtained are monitored with a high-speed camera. The results are further quantified by image analysis using an image processing program.

The goal of the protocol is to create liquid crystalline polymer films that can mechanically oscillate under continuous light irradiation. We describe in great detail the conception of free-standing films, from the liquid crystal alignment method to the photo-actuation. The experimental protocol applied to prepare this material is broadly applicable.

Işık tarafından indüklenen makroskopik salınım hareketi için sıvı kristal ağlar hazırlanması

A strategy based on doped liquid crystalline networks is described to create mechanical self-sustained oscillations of plastic films under continuous ...

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape method or individual WS2 nanotubes by dispersing the suspension of WS2 nanotubes. The selected samples have been fabricated into devices by the use of the electron beam lithography and electrolyte is put on the devices. We have characterized the electronic properties of the devices under applying the gate voltage. In the small gate voltage region, ions in the electrolyte are accumulated on the surface of the samples which leads to the large electric potential drop and resultant electrostatic carrier doping at the interface. Ambipolar transfer curve has been observed in this electrostatic doping region. When the gate voltage is further increased, we met another drastic increase of source-drain current which implies that ions are intercalated into layers of WS2 and electrochemical carrier doping is realized. In such electrochemical doping region, superconductivity has been observed. The focused technique provides a powerful strategy for achieving the electric-filed-induced quantum phase transition.

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Here, we present a protocol to control the carrier number in solids by using the electrolyte.

Elektrik alanı kontrol elektronik elektrolit çoğunluğuna tarafından WS2 Nanodevices durumlarda

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape ...

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Flexible non-volatile memories have received much attention as they are applicable for portable smart electronic device in the future, relying on high-density data storage and low-power consumption capabilities. However, the high-quality oxide based nonvolatile memory on flexible substrates is often constrained by the material characteristics and the inevitable high-temperature fabrication process. In this paper, a protocol is proposed to directly grow an epitaxial yet flexible lead zirconium titanate memory element on muscovite mica. The versatile deposition technique and measurement method enable the fabrication of flexible yet single-crystalline non-volatile memory elements necessary for the next generation of smart devices.

In this paper, we present a protocol to directly grow an epitaxial yet flexible lead zirconium titanate memory element on muscovite mica.

Bir imalat ve Van Der Waals Heteroepitaxy dayanan esnek bir Ferroelectric öğesi için ölçüm yöntemi

Flexible non-volatile memories have received much attention as they are applicable for portable smart electronic device in the future, relying on ...

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Materials showing coupling phenomena between magnetism and (ferro)electricity, i.e., magnetoelectric effects, have attracted a great deal of attention due to their potential applications for future device technologies such as sensors and storage. However, conventional approaches, which usually utilize materials containing magnetic metal ions (or radicals), have a major problem: only a few materials have been found to show the coupling phenomena at room temperature. Recently, we proposed a new approach to achieve room-temperature magnetoelectrics. In contrast to conventional approaches, our alternative proposal focuses on a completely different material, a &#34;liquid crystal&#34;, free from magnetic metal ions. In such liquid crystals, a magnetic field can be utilized to control the orientational state of constituent molecules and the corresponding electric polarization through magnetic anisotropy of the molecules; it is an unprecedented mechanism of the magnetoelectric effect. In this context, this paper provides a protocol to measure ferroelectric properties induced by a magnetic field, that is, the direct magnetoelectric effect, in a liquid crystal. With the method detailed here, we successfully detected magnetically-tuned electric polarization in the chiral smectic C phase of a liquid crystal at room temperature. Taken together with the flexibility of constituent molecules, which directly affects the magnetoelectric responses, the introduced method will serve to allow liquid crystal cells to acquire more functions as room-temperature magnetoelectrics and associated optical materials.

In this report, we present a protocol to examine direct magnetoelectric effects, i.e., induction of ferroelectric polarization by applying magnetic fields, in liquid crystals. This protocol provides a unique approach, supported by the softness of liquid crystals, to achieve room-temperature magnetoelectrics.

Manyetik olarak ayarlı ölçüm Ferroelectric polarizasyon sıvı kristaller içinde

Materials showing coupling phenomena between magnetism and (ferro)electricity, i.e., magnetoelectric effects, have attracted a great deal of attention due ...

High-Contrast and Fast Photorheological Switching of a Twist-Bend Nematic Liquid Crystal

Smart viscoelastic materials that respond to specific stimuli are one of the most attractive classes of materials important to future technologies, such as on-demand switchable adhesion technologies, actuators, molecular clutches, and nano-/microscopic mass transporters. Recently it was found that through a special solid-liquid transition, rheological properties can exhibit significant changes, thus providing suitable smart viscoelastic materials. However, designing materials with such a property is complex, and forward and backward switching times are usually long. Therefore, it is important to explore new working mechanisms to realize solid-liquid transitions, shorten the switching time, and enhance the contrast of rheological properties during switching. Here, a light-induced crystal-liquid phase transition is observed, which is characterized by means of polarizing light microscopy (POM), photorheometry, photo-differential scanning calorimetry (photo-DSC), and X-ray diffraction (XRD). The light-induced crystal-liquid phase transition presents key features such as (1) fast switching of crystal-liquid phases for both forward and backward reactions and (2) a high contrast ratio of viscoelasticity. In the characterization, POM is advantageous in offering information on the spatial distribution of LC molecule orientations, determining the type of liquid crystalline phases appearing in the material, and studying the orientation of LCs. Photorheometry allows measurement of a material&#8217;s rheological properties under light stimuli and can reveal the photorheological switching properties of materials. Photo-DSC is a technique to investigate thermodynamic information of materials in darkness and under light irradiation. Lastly, XRD allows studying of microscopic structures of materials. The goal of this article is to clearly present how to prepare and measure the discussed properties of a photorheological material.

This protocol demonstrates the preparation of a photorheological material that exhibits a solid phase, various liquid crystalline phases, and an isotropic liquid phase by increasing temperature. Presented here are methods for measuring the structure-viscoelasticity relationship of the material.

Twist-Bend Nematic Sıvı Kristalin Yüksek Kontrastlı ve Hızlı Fotoromatolojik Geçişi

Smart viscoelastic materials that respond to specific stimuli are one of the most attractive classes of materials important to future technologies, such ...

Kimya

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Aluminum-oxide (Al2O3) is a low cost, easily processable and high dielectric constant insulating material that is particularly appropriate for use as the dielectric layer of thin-film transistors (TFTs). Growth of aluminum-oxide layers from anodization of metallic aluminum films is greatly advantageous when compared to sophisticated processes such as atomic layer deposition (ALD) or deposition methods that demand relatively high temperatures (above 300 &#176;C) such as aqueous combustion or spray-pyrolysis. However, the electrical properties of the transistors are highly dependent on the presence of defects and localized states at the semiconductor/dielectric interface, which are strongly affected by the manufacturing parameters of the anodized dielectric layer. To determine how several fabrication parameters influence the device performance without performing all possible combination of factors, we used a reduced factorial analysis based on a Plackett-Burman design of experiments (DOE). The choice of this DOE permits the use of only 12 experimental runs of combinations of factors (instead of all 256 possibilities) to obtain the optimized device performance. The ranking of the factors by the effect on device responses such as the TFT mobility is possible by applying analysis of variance (ANOVA) to the obtained results.

Anodization parameters for growth of the aluminum-oxide dielectric layer of zinc-oxide thin-film transistors (TFTs) are varied to determine the effects on the electrical parameter responses. Analysis of variance (ANOVA) is applied to a Plackett-Burman design of experiments (DOE) to determine the manufacturing conditions that result in optimized device performance.

İnce Film Transistörlerinin Alüminyum Oksit Dielektrik Tabakasına Anodizasyon Parametrelerinin Etkisi

Aluminum-oxide (Al2O3) is a low cost, easily processable and high dielectric constant insulating material that is particularly appropriate for use as the ...

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles

Today, wearable electronics devices combine a large variety of functional, stretchable, and flexible technologies. However, in many cases, these devices cannot be worn under everyday conditions. Therefore, textiles are commonly considered the best substrate to accommodate electronic devices in wearable use. In this paper, we describe how to selectively pattern organic electroactive materials on textiles from a solution in an easy and scalable manner. This versatile deposition technique enables the fabrication of wearable organic electronic devices on clothes.

In this paper, we present a protocol to selectively deposit organic materials on textiles, which allows for the direct integration of organic electronic devices with wearables. The fabricated devices can be fully integrated in textiles, respecting their mechanical appearance and enabling sensing capabilities.

Tekstil Organik Elektronik Cihazlar Basit ve Ölçeklenebilir Fabrikasyon Yöntemi

Today, wearable electronics devices combine a large variety of functional, stretchable, and flexible technologies. However, in many cases, these devices ...