Bu eser Ulusal Doğa Bilimleri Foundation of China (Grant NOS 11402221 ve 11502224), devlet anahtar laboratuvar, yoğun darbeli radyasyon simülasyon ve etkisi (SKLIPR1513) ve Hunan eyalet anahtar araştırma ve geliştirme planı (No tarafından desteklenmiştir 2016 WK 2014).

1. esnek PZT ince filmler imalatı
<ol><li>1 cm x 1 cm Mika substrat Mika sayfasından makasla kesme.</li>
	<li>Bu 1 cm x 1 cm Mika substrat çift taraflı bant kullanarak bir masa üzerine düzeltmek.</li>
	<li>Mika katman--bir mikrometre ile ölçülen katman kadar istediğiniz kalınlıkta (50 µm), besleme için cımbız kullanın.</li>
	<li>Bu taze hamur i ciddi Mika substrat ince bir tabaka gümüş boya kullanarak bir 5'' substrat tutucu üzerinde ve mika substrat üzerine sıkıca eklemesi 10 dakika sıcak tabakta 120 ° C'de tedavi.</li>
	<li>PLD (Geniş puls lazer biriktirme) substrat tutucu PLD odasına koy.</li>
	<li>Enerji (örneğin, 300 mJ) lazer ve tekrarlama oranı (örneğin, 10 Hz) seçin.</li>
	<li>Odaklama lens kümesi konuma getirin.</li>
	<li>Objektif kapağı açın ve bir 5 nm CoFe2O4 (CFO) mevduat [lazer enerji: 300 mJ, oksijen basıncı: 50 mTorr, numune sıcaklığı: 590 ° C, biriktirme zaman: 5 min] ince film bir arabellek katman olarak lazer (şekil 1) tetikleyici tarafından.</li>
	<li>20-80 nm SrRuO3 (SRO) mevduat [lazer enerji: 300 mJ, oksijen basıncı: 100 mTorr, numune sıcaklığı: 680 ° C, biriktirme zaman: 10-30 dk] katman üzerinde bulunan CFO arabellek alt elektrot tetikleme lazer (tarafından sonraki elektrik performans testleri için Şekil 1).</li>
	<li>Depozito 150 a nm PZT [lazer enerji: 300 mJ, oksijen basıncı: 100 mTorr, numune sıcaklığı: 650 ° C, ifade Saat: 60 dk] ince film SRO alt elektrot üstünde lazer (şekil 1) tetikleyici tarafından.</li>
	<li>N2 kullanarak odası delik ve sıcaklığı oda sıcaklığına ulaştığında PZT/Mika örnek (Şekil 2) kaldırın.</li>
	<li>Örnek bir cam parçası koymak.</li>
	<li>Önceden tasarlanmış bir mesh ile 200 µm çapı örnek üstüne koy. Mesh de düzeltmek ve kafes-örnek sputtering odanın içine koymak.</li>
	<li>DC SAÇTIRMA (10 mA, 8 mbar, 6 dk.) Pt üst elektrotlar film yatırmak için kullanın. Örnek SAÇTIRMA sonra kaldırın.</li>
	<li>Bir bıçak ya da % 20 HF asit 1 mm x 1 mm PZT bölümü kaldırmak için kullanın. Bu alt SRO elektrot ortaya çıkarmak ve birçok küçük esnek ferroelectric Kondansatörler oluşturmak içindir. Not: SRO alt elektrot olarak büyümek ve sonra şekil 3' te gösterilen PZT ince film elektronik özelliklerini ölçmek için birçok küçük kapasitörler kurmaya SAÇTIRMA DC tarafından filmlerde elektrotlar üstüne Pt mevduat.</li>
	<li>Alt SRO elektrot elektriksel iletkenlik artırmak için maruz SRO iletken gümüş bir kat boya. İletken gümüş maruz SRO ulaşabilirsiniz emin olun.</li>
</ol>2. ferroelectric karakterizasyonu
<ol><li>Bükme testi<ol>
<li>Arka esnek örnek için basit nakletmek-in örnek bir sahneden diğerine örnek olarak aynı boyutta kağıt tutkal.</li>
		<li>PZT/Mika ferroelectric test sistemi ve yarı iletken cihaz analyzer test kartını üzerinde yerleştirin.</li>
		<li>Bir ölçüm probu ferroelectric test sistemi ve yarı iletken cihaz Analyzer Pt üst elektrot ve diğer ölçüm probu polarizasyon-elektriksel alan (P-E) histeresis döngüleri almak için gümüş-SRO katmanda koydu ve örnek unbent ise kapasite-elektriksel alan (C-E) eğrileri.<ol>
<li>2 kHz frekans iki problar ile P-E histeresis döngüleri ölçmek ve 4'te V. ölçü C-E eğrileri ile iki probları 1 MHz frekans ve 4 Kaldır V. unbent örnek.</li>
		</ol>
</li>
		<li>Esnek PZT/Mika ince film çift taraflı bant kullanarak istediğiniz kalıp üzerinde güvenli. Ölçüm sırasında kayma/kayma Mika önlemek için dikkat ediniz.</li>
		<li>Ferroelectric test sistemi ve yarı iletken cihaz analyzer test tahtaya monte edin.</li>
		<li>Alt SRO elektrot benzer daha önce kullanılan yapılandırma kaplama Gümüş (Adım 2.1.3) aracılığıyla diğer sonda dokunur bir sonda Pt üst elektrot bir kenara bırakıp.</li>
		<li>P-E histeresis döngüleri ve C-E eğrileri çeşitli çekme dayanımı ve bükme yarıçapı (şekil 4) basınç altında ölçün.<ol>
<li>P-E histeresis döngüleri, iki problar 2 kHz frekans ve 4 V. ölçü C-E eğrileri 1 MHz frekans ve 4 V iki problar ile ölçü.</li>
		</ol>
</li>
		<li>P-E ve C-E ölçümler tamamlandığında esnek PZT örnek kaldırın.</li>
	</ol>
</li>
	<li>Termal kararlılık<ol>
<li>PZT/Mika ferroelectric test sistemi ve yarı iletken cihaz analyzer test tahtaya yaz.</li>
		<li>Bir ölçüm probu Pt üst elektrot ve diğer ölçüm probu gümüş-SRO katmanda koydu.</li>
		<li>Örnek ısı sıcaklık kontrol sistemi açın.</li>
		<li>Farklı sıcaklıklarda (25 ° C, 50 ° C, 75 ° C, 100 ° C, 125 ° C, 150 ° C, 175 ° C) P-E ve C-E ölçümleri yapmak.</li>
		<li>Ölçümleri tamamladıktan sonra ısıtıcı montaj dön.</li>
	</ol>
</li>
	<li>Bükme cyclability testleri<ol>
<li>Esnek PZT/Mika bu kurulum iki oluklar monte.</li>
		<li>Bir motor yardımı ile diğer ucundan bükülmüş iken örnek bir ucunu düzeltmek.</li>
		<li>PZT/Mika uzunluğu ile birlikte motorlu 8 mm bükme işlemi (şekil 5) önce (eğilme) hareket yönünü ölçmek için bir cetvel kullanın.</li>
		<li>Örnek 5 mm formüle göre eğmek için hareket uzunluğu C hesaplamak: nerede L PZT/Mika unbent devlet uzunluğu, R olan bükme yarıçapı ise C motor hareketi uzunluğu C=L-2Rsin(L/2R).</li>
		<li>Bilgisayar (şekil 6) döngüsü (1000) bükme sayısını ayarlayın.</li>
		<li>Motor ileri geri hareket başlatmak için Başlat düğmesini (şekil 6) tıklatın.</li>
		<li>Örnek kaldırmak ve P-E ferroelectric özellikleri korunur olup olmadığını kontrol etmek için ölçmek.</li>
	</ol>
</li>
</ol>

<ol>
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G., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=The+flexible+non-volatile+memory+devices+using+oxide+semiconductors+and+ferroelectric+polymer+poly(vinylidene+fluoride-trifluoroethylene).">The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene).</a> Applied Physics Letters. 99 (1), 012901-012903 (2011).</li><li>Kim, R. 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J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Epitaxial+Pb(Zr,Ti)O3+thin+films+on+flexible+substrates.">Epitaxial Pb(Zr,Ti)O3 thin films on flexible substrates.</a> Journal of the American Ceramic Society. 94 (10), 3223-3226 (2011).</li><li>Rho, J., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=PbZrxTi1&#8722;xO3+Ferroelectric+thin-film+capacitors+for+flexible+nonvolatile+memory+applications.">PbZrxTi1&#8722;xO3 Ferroelectric thin-film capacitors for flexible nonvolatile memory applications.</a> IEEE Electron Device Letters. 31 (9), 1017-1019 (2010).</li><li>Bretos, I., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Activated+Solutions+Enabling+Low-Temperature+processing+of+functional+ferroelectric+oxides+for+flexible+electronics.">Activated Solutions Enabling Low-Temperature processing of functional ferroelectric oxides for flexible electronics.</a> Advanced Materials. 26 (9), 1405-1409 (2014).</li><li>Tsagarakis, E. 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Yazarlar ifşa rakip hiçbir mali ilgi alanlarına sahip.

Ferroelectric elemanları imalatı anahtar adımda bir temiz ve hatta/düz yüzey yüzey kullanımında yatıyor. Taze i ciddi Mika yüzey atomik pürüzsüz olmasına rağmen bu yüzeyleri görünür dağılma acı önlemek için dikkat, Katmanlar, çatlaklar, kapanımlar, vb PZT katman birikimi sonra bölmek gereklidir, örnek altında soğutmalı bir yüksek oksijen basıncı (oksijen boş pozisyonlar azaltmak için 200-500 Torr). Ex situ üst Platin elektrotlar birçok Pt/PZT/SRO kapasitör öğeler...

Esnek geçici olmayan bellek öğeleri (NVME) başarılı imalatı esnek elektronik tam potansiyelini önemli bir rol oynar. NVME hafif, düşük maliyetli, düşük güç tüketimi, hızlı hızlı ve yüksek depolama yoğunluğu yetenekleri yanı sıra veri depolama, bilgi işlem ve iletişim özelliği. Perovskite Pb (Zr, Ti) O3 (PZT) onun büyük polarizasyon, hızlı polarizasyon geçiş, yüksek Curie sıcaklık, düşük zorlayıcı alan ve yüksek piezoelektrik katsayısı düşünüyorsanız bu tür uygulamalar için popüler bir sistem olarak davranır. Ferroelectric kalıcı anılar, bir dış gerilim darbe iki kalan kutuplaşmalar '0' ve '1' tarafından temsil edilen iki istikrarlı yönde arasında geçiş yapabilirsiniz. Bu non-maymun iştahlı ve yazma/okuma işlemi nanosaniye içinde tamamlanabilir. Organik1,2,3,4,5,6 ve inorganik7,8,9,10 NVME dayalı ,11,12,13,14,15 ferroelectric malzeme esnek yüzeyler üzerinde çalıştı. Ancak, bu tür entegrasyon sadece yüzeylerde yetersizlik yüksek sıcaklık büyüme aynı zamanda bozulmuş aygıtı performansını, geçerli sızıntı ve elektrik onların kaba yüzeyler nedeniyle kısa devre ile sınırlıdır. Umut verici sonuçlar rağmen stratejileri substrat8 inceltme gibi alternatif ve esnek substrat15 Epitaksiyel katman transferinde acı içinde görüş-in karmaşık multistep işlemi sınırlı canlılığı Tahmin edilemezlik transfer ve sınırlı uygulanabilirliği.
Yukarıda belirtilen nedenlerden dolayı daha fazla esnek elektronik ilerlemek için yumuşak yüzeylerde sınırlı termal ve operasyonel stabiliteleri üstesinden yapabiliyor uygun bir substrat keşfetmek için önemlidir. Doğal Moskof Mika (KAl2(AlSi3O10) (OH)2) substrat atomik pürüzsüz gibi yüzeyler, yüksek termal kararlılık, kimyasal hareketsizlik, yüksek şeffaflık, mekanik esneklik, benzersiz özellikleri ile ve Geçerli imalat yöntemleri ile uyumluluk etkili bu sorunları ile başa çıkmak için kullanılabilir. Daha çok, iki boyutlu katmanlı yapısı monoclinic Mika, kafes ve termal koşullar önemli ölçüde etkisi sıkma substrat bastırmak, eşleşen vektöründeki etkisini azaltır, van der Waals epitaxy destekler. Bu avantajları fonksiyonel oksitler16,17,18,19,20,21,22doğrudan büyüme istismar, 23 Moskof tarihinde son zamanlarda, içinde görüş-in esnek aygıt uygulamaları.
Burada, biz doğrudan Epitaksiyel henüz esnek kurşun zirkonyum titanate (PZT) ince filmler Moskof Mika üzerinde büyümek için bir protokol tanımlamak. Bu Mika, van der Waals heteroepitaxy kaynaklanan çok yönlü özelliklerini dayanarak bir lazer biriktirme işlem aracılığıyla elde edilir. Bu tür uydurma yapıların Epitaksiyel PZT katı tek kristal yüzeyler üzerinde tüm üstün özellikleri korumak ve mükemmel termal ve mekanik sağlamlık sergiler. Bu basit ve güvenilir bir yaklaşım multistep aktarımı ve stratejileri inceltme yüzey üzerinde teknolojik bir avantaj sağlar ve çok beklenen esnek henüz tek kristal geçici olmayan bellek öğeleri için önkoşul gelişimini kolaylaştırır yeni nesil akıllı aygıtlar ile yüksek ifa.

<table border="0" cellpadding="0" cellspacing="0" width="1114">
	<tbody>
		<tr height="40">
			<td height="40" style="height:40px;width:216px;">Equipment</td>
			<td style="width:387px;"></td>
			<td style="width:344px;"></td>
			<td style="width:167px;"></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">hot plate</td>
			<td style="width:387px;">Polish</td>
			<td style="width:344px;">P-20</td>
			<td style="width:167px;"></td>
		</tr>
		<tr height="25">
			<td height="25" style="height:25px;">PLD system</td>
			<td>PVD products</td>
			<td>PLD 5000</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Ferroelectric test system&#160;</td>
			<td>Radiant Technologies Precisions workstations&#160;</td>
			<td>RT66A</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Semiconductor device analyzer&#160;</td>
			<td>Agilent&#160;</td>
			<td>B1500A</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Bending molds</td>
			<td>home-made</td>
			<td></td>
			<td>Machined teflon material</td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Bending stage</td>
			<td>home-built</td>
			<td></td>
			<td>Labview interfaced setup which provides a prescise displacemnt as small as 1 micrometer</td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Sputtering system</td>
			<td>Beijing&#160;Elaborate</td>
			<td>ETD-3000</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">Materials</td>
			<td></td>
			<td></td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">mica(001) sheets</td>
			<td>Nilaco corporation&#160;</td>
			<td>990066</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">conductive silver paint</td>
			<td>Ted Pella, INC</td>
			<td>No.16033</td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">CoFe2O4 target</td>
			<td>Kurt J.Lesker</td>
			<td></td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">SrRuO3 target</td>
			<td>Kurt J.Lesker</td>
			<td></td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;">PbZr0.2Ti0.8O3 target</td>
			<td>Kurt J.Lesker</td>
			<td></td>
			<td></td>
		</tr>
		<tr height="40">
			<td height="40" style="height:40px;width:216px;">Pt target</td>
			<td>Hefei Ke jing</td>
			<td></td>
			<td></td>
		</tr>
	</tbody>
</table>

a fabrication and measurement method for a flexible ferroelectric element based on van der waals heteroepitaxy

Gelecekte, yüksek yoğunluklu veri depolama ve düşük güç tüketimi yetenekleri üzerinde güvenerek taşınabilir akıllı elektronik cihaz için geçerli olduğu gibi esnek geçici olmayan anılar çok dikkat aldık. Ancak, yüksek kaliteli oksit dayalı geçici olmayan bellek esnek yüzeyler üzerinde kez malzeme özellikleri ve kaçınılmaz yüksek sıcaklık imalat süreci tarafından sınırlanır. Bu yazıda, bir protokol Epitaksiyel henüz esnek kurşun zirkonyum titanate bellek öğe üzerinde Moskof Mika doğrudan büyümeye önerilmiştir. Çok yönlü ifade tekniği ve ölçüm yöntemi etkinleştirmek esnek henüz tek kristal geçici olmayan bellek öğeleri yeni nesil akıllı aygıtlar için gerekli imalatı.

Epitaksiyel PZT/SRO/CFO/Mika ince filmler lazer biriktirme tekniği ile adım 1'de özetlenen tevdi. Büyüme şeması şekil 1 gösterir ve Şekil 2 PZT üzerinde dayalı bir gerçek esnek NVM öğesini gösterir.

Mekanik istikrar esnek aygıt kullanma çok önemli bir yönüdür. Mekanik esneme karşı heterostructure makroskopik ferroelectric performansını ...

Watch this Scientific Journal Video about A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy at JoVE.com

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Bu yazıda, biz Moskof Mika esnek kurşun zirkonyum titanate bellek öğesini doğrudan bir Epitaksiyel henüz büyümeye bir iletişim kuralı mevcut.

Bir imalat ve Van Der Waals Heteroepitaxy dayanan esnek bir Ferroelectric öğesi için ölçüm yöntemi

Flexible non-volatile memories have received much attention as they are applicable for portable smart electronic device in the future, relying on ...

a-fabrication-measurement-method-for-flexible-ferroelectric-element

Research

JoVE Journal

Engineering

8.2K Görüntüleme.  Xiangtan University. Bu yazıda, biz Moskof Mika esnek kurşun zirkonyum titanate bellek öğesini doğrudan bir Epitaksiyel henüz büyümeye bir iletişim kuralı mevcut.

Video: A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Fabrication of High Contrast Gratings for the Spectrum Splitting Dispersive Element in a Concentrated Photovoltaic System

High contrast gratings are designed and fabricated and its application is proposed in a parallel spectrum splitting dispersive element that can improve the solar conversion efficiency of a concentrated photovoltaic system. The proposed system will also lower the solar cell cost in the concentrated photovoltaic system by replacing the expensive tandem solar cells with the cost-effective single junction solar cells. The structures and the parameters of high contrast gratings for the dispersive elements were numerically optimized. The large-area fabrication of high contrast gratings was experimentally demonstrated using nanoimprint lithography and dry etching. The quality of grating material and the performance of the fabricated device were both experimentally characterized. By analyzing the measurement results, the possible side effects from the fabrication processes are discussed and several methods that have the potential to improve the fabrication processes are proposed, which can help to increase the optical efficiency of the fabricated devices.

The fabrication of high contrast gratings as the parallel spectrum splitting dispersive element in a concentrated photovoltaic system is demonstrated. Fabrication processes including nanoimprint lithography, TiO2 sputtering and reactive ion etching are described. Reflectance measurement results are used to characterize the optical performance.

Bir Konsantre Fotovoltaik Sistemde Spectrum Yarma Dağılım Eleman Yüksek Kontrast Gratings imalatı

High contrast gratings are designed and fabricated and its application is proposed in a parallel spectrum splitting dispersive element that can improve ...

Mühendislik

Fabrication Process of Silicone-based Dielectric Elastomer Actuators

This contribution demonstrates the fabrication process of dielectric elastomer transducers (DETs). DETs are stretchable capacitors consisting of an elastomeric dielectric membrane sandwiched between two compliant electrodes. The large actuation strains of these transducers when used as actuators (over 300% area strain) and their soft and compliant nature has been exploited for a wide range of applications, including electrically tunable optics, haptic feedback devices, wave-energy harvesting, deformable cell-culture devices, compliant grippers, and propulsion of a bio-inspired fish-like airship. In most cases, DETs are made with a commercial proprietary acrylic elastomer and with hand-applied electrodes of carbon powder or carbon grease. This combination leads to non-reproducible and slow actuators exhibiting viscoelastic creep and a short lifetime. We present here a complete process flow for the reproducible fabrication of DETs based on thin elastomeric silicone films, including casting of thin silicone membranes, membrane release and prestretching, patterning of robust compliant electrodes, assembly and testing. The membranes are cast on flexible polyethylene terephthalate (PET) substrates coated with a water-soluble sacrificial layer for ease of release. The electrodes consist of carbon black particles dispersed into a silicone matrix and patterned using a stamping technique, which leads to precisely-defined compliant electrodes that present a high adhesion to the dielectric membrane on which they are applied.

This manuscript shows the fabrication process for the manufacture of dielectric elastomer soft actuators based on silicone membranes. The three key stages of production are presented in detail: blade casting of thin silicone membranes; pad printing of compliant electrodes; and the assembly of all the components.

Silikon tabanlı Dielektrik Elastomer Aktüatörler Fabrikasyon Süreci

This contribution demonstrates the fabrication process of dielectric elastomer transducers (DETs). DETs are stretchable capacitors consisting of an ...

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Novel electronic materials are often produced for the first time by synthesis processes that yield bulk crystals (in contrast to single crystal thin film synthesis) for the purpose of exploratory materials research. Certain materials pose a challenge wherein the traditional bulk Hall bar device fabrication method is insufficient to produce a measureable device for sample transport measurement, principally because the single crystal size is too small to attach wire leads to the sample in a Hall bar configuration. This can be, for example, because the first batch of a new material synthesized yields very small single crystals or because flakes of samples of one to very few monolayers are desired. In order to enable rapid characterization of materials that may be carried out in parallel with improvements to their growth methodology, a method of device fabrication for very small samples has been devised to permit the characterization of novel materials as soon as a preliminary batch has been produced. A slight variation of this methodology is applicable to producing devices using exfoliated samples of two-dimensional materials such as graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenides (TMDs), as well as multilayer heterostructures of such materials. Here we present detailed protocols for the experimental device fabrication of fragments and flakes of novel materials with micron-sized dimensions onto substrate and subsequent measurement in a commercial superconducting magnet, dry helium close-cycle cryostat magnetotransport system at temperatures down to 0.300 K and magnetic fields up to 12 T.

We describe the methodology of mechanical exfoliation and deposition of flakes of novel materials with micron-sized dimensions onto substrate, fabrication of experimental device structures for transport experimentation, and the magnetotransport measurement in a dry helium close-cycle cryostat at temperatures down to 0.300 K and magnetic fields up to 12 T.

Yeni Malzemelerin Düşük sıcaklık Magnetotransport Ölçüm İleri Deneysel Yöntemler

Novel electronic materials are often produced for the first time by synthesis processes that yield bulk crystals (in contrast to single crystal thin film ...

A Fabrication Method for Highly Stretchable Conductors with Silver Nanowires

Stretchable electronics are identified as a key technology for electronic applications in the next generation. One of the challenges in fabrication of stretchable electronic devices is the preparation of stretchable conductors with great mechanical stability. In this study, we developed a simple fabrication method to chemically solder the contact points between silver nanowire (AgNW) networks. AgNW nanomesh was first deposited on a glass slide via spray coating method. A reactive ink composed of silver nanoparticle (AgNPs) precursors was applied over the spray coated AgNW thin films. After heating for 40 min, AgNPs were preferentially generated over the nanowire junctions to solder the AgNW nanomesh, and reinforced the conducting network. The chemically modified AgNW thin film was then transferred to polyurethane (PU) substrates by casting method. The soldered AgNW thin films on PU exhibited no obvious change in electrical conductivity under stretching or rolling process with elongation strains up to 120%.

A simple synthesis method is used to chemically solder silver nanowire thin film to fabricate highly stretchable and conductive metal conductors.

Gümüş Nanotel ile son derece Gerilebilir İletkenler için bir Fabrikasyon Yöntemi

Stretchable electronics are identified as a key technology for electronic applications in the next generation. One of the challenges in fabrication of ...

Standardized Method for Measuring Collection Efficiency from Wipe-sampling of Trace Explosives

One of the limiting steps to detecting traces of explosives at screening venues is effective collection of the sample. Wipe-sampling is the most common procedure for collecting traces of explosives, and standardized measurements of collection efficiency are needed to evaluate and optimize sampling protocols. The approach described here is designed to provide this measurement infrastructure, and controls most of the factors known to be relevant to wipe-sampling. Three critical factors (the applied force, travel distance, and travel speed) are controlled using an automated device. Test surfaces are chosen based on similarity to the screening environment, and the wipes can be made from any material considered for use in wipe-sampling. Particle samples of the explosive 1,3,5-trinitroperhydro-1,3,5-triazine (RDX) are applied in a fixed location on the surface using a dry-transfer technique. The particle samples, recently developed to simulate residues made after handling explosives, are produced by inkjet printing of RDX solutions onto polytetrafluoroethylene (PTFE) substrates. Collection efficiency is measured by extracting collected explosive from the wipe, and then related to critical sampling factors and the selection of wipe material and test surface. These measurements are meant to guide the development of sampling protocols at screening venues, where speed and throughput are primary considerations.

Optimized sampling protocols and the development of new wipe materials can be facilitated by standardized measurements of collection efficiency from wipe-sampling. Our approach for sampling trace explosives uses an automated device to control speed, force, and distance during wipe-sampling followed by extraction of collected explosives.

İz Patlayıcı Wipe-örneklemenin toplama verimi ölçümü için standart yöntem

One of the limiting steps to detecting traces of explosives at screening venues is effective collection of the sample. Wipe-sampling is the most common ...

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

Here, the authors report the embedded metal-mesh transparent electrode (EMTE), a new transparent electrode (TE) with a metal mesh completely embedded in a polymer film. This paper also presents a low-cost, vacuum-free fabrication method for this novel TE; the approach combines lithography, electroplating, and imprint transfer (LEIT) processing. The embedded nature of the EMTEs offers many advantages, such as high surface smoothness, which is essential for organic electronic device production; superior mechanical stability during bending; favorable resistance to chemicals and moisture; and strong adhesion with plastic film. LEIT fabrication features an electroplating process for vacuum-free metal deposition and is favorable for industrial mass production. Furthermore, LEIT allows for the fabrication of metal mesh with a high aspect ratio (i.e., thickness to linewidth), significantly enhancing its electrical conductance without adversely losing optical transmittance. We demonstrate several prototypes of flexible EMTEs, with sheet resistances lower than 1 &#937;/sq and transmittances greater than 90%, resulting in very high figures of merit (FoM) &#8211; up to 1.5 x 104 &#8211; which are amongst the best values in the published literature.

This protocol describes a solution-based fabrication strategy for high-performance, flexible, transparent electrodes with fully-embedded, thick metal mesh. Flexible transparent electrodes fabricated by this process demonstrate among the highest reported performances, including ultra-low sheet resistance, high optical transmittance, mechanical stability under bending, strong substrate adhesion, surface smoothness, and environmental stability.

Gömülü Metal Örgülü Yüksek Performanslı, Esnek, Şeffaf Elektrotlar için Ölçeklenebilir Çözeltiyle İşlenmiş Üretim Stratejisi

Here, the authors report the embedded metal-mesh transparent electrode (EMTE), a new transparent electrode (TE) with a metal mesh completely embedded in a ...

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, but several challenging points remain, such as a low absorption efficiency due to a thin active layer and low flexibility. We present an advanced method to fabricate a flexible phototransistor array with an improved electrical performance. The outstanding electrical performance is driven by a low dark current owing to deep impurity doping. Stretchable and flexible metal interconnectors simultaneously offer electrical and mechanical stabilities in a highly deformed state. The protocol explicitly describes the fabrication process of the phototransistor using a thin silicon membrane. By measuring I-V characteristics of the completed device in deformed states, we demonstrate that this approach improves the mechanical and electrical stabilities of the phototransistor array. We expect that this approach to a flexible phototransistor can be widely used for the applications of not only next-generation imaging systems/optoelectronics but also wearable devices such as tactile/pressure/temperature sensors and health monitors.

We present a detailed method to fabricate a deformable lateral NIPIN phototransistor array for curved image sensors. The phototransistor array with an open mesh form, which is composed of thin silicon islands and stretchable metal interconnectors, provides flexibility and stretchability. The parameter analyzer characterizes the electrical property of the fabricated phototransistor.

Esnek görüntü sensörü imalatı Lateral NIPIN Phototransistors dayalı.

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, ...

Cutting Procedures, Tensile Testing, and Ageing of Flexible Unidirectional Composite Laminates

Many body armor designs incorporate unidirectional (UD) laminates. UD laminates are constructed of thin (&#60;0.05 mm) layers of high-performance yarns, where the yarns in each layer are oriented parallel to each other and held in place using binder resins and thin polymer films. The armor is constructed by stacking the unidirectional layers in different orientations. To date, only very preliminary work has been performed to characterize the ageing of the binder resins used in unidirectional laminates and the effects on their performance. For example, during the development of the conditioning protocol used in the National Institute of Justice Standard-0101.06, UD laminates showed visual signs of delamination and reductions in V50, which is the velocity at which half of the projectiles are expected to perforate the armor, after ageing. A better understanding of the material property changes in UD laminates is necessary to comprehend the long-term performance of armors constructed from these materials. There are no current standards recommended for mechanically interrogating unidirectional (UD) laminate materials. This study explores methods and best practices for accurately testing the mechanical properties of these materials and proposes a new test methodology for these materials. Best practices for ageing these materials are also described.

The goal of the study was to develop protocols to prepare consistent specimens for accurate mechanical testing of high-strength aramid or ultra-high-molar-mass polyethylene-based flexible unidirectional composite laminate materials and to describe protocols for performing artificial ageing on these materials.

Esnek tek yönlü kompozit laminatlar kesme prosedürleri, çekme testi ve yaşlanma

Many body armor designs incorporate unidirectional (UD) laminates. UD laminates are constructed of thin (&#60;0.05 mm) layers of high-performance yarns, ...

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

In this work we describe a technique for creating new crystals (van der Waals heterostructures) by stacking distinct ultrathin layered 2D materials. We demonstrate not only lateral control but, importantly, also control over the angular alignment of adjacent layers. The core of the technique is represented by a home-built transfer setup which allows the user to control the position of the individual crystals involved in the transfer. This is achieved with sub-micrometer (translational) and sub-degree (angular) precision. Prior to stacking them together, the isolated crystals are individually manipulated by custom-designed moving stages that are controlled by a programmed software interface. Moreover, since the entire transfer setup is computer controlled, the user can remotely create precise heterostructures without coming into direct contact with the transfer setup, labeling this technique as &#8220;hands-free&#8221;. In addition to presenting the transfer set-up, we also describe two techniques for preparing the crystals that are subsequently stacked.

In this work we describe a technique that is used to create new crystals (van der Waals heterostructures) by stacking ultrathin layered 2D materials with precise control over position and relative orientation.

Hassas rotasyonel hizalama ile Van der Waals Heterostructures imalatı

In this work we describe a technique for creating new crystals (van der Waals heterostructures) by stacking distinct ultrathin layered 2D materials. We ...

Method Development for Contactless Resonant Cavity Dielectric Spectroscopic Studies of Cellulosic Paper

The current analytical techniques for characterizing printing and graphic arts substrates are largely ex situ and destructive. This limits the amount of data that can be obtained from an individual sample and renders it difficult to produce statistically relevant data for unique and rare materials. Resonant cavity dielectric spectroscopy is a non-destructive, contactless technique which can simultaneously interrogate both sides of a sheeted material and provide measurements which are suitable for statistical interpretations. This offers analysts the ability to quickly discriminate between sheeted materials based on composition and storage history. In this methodology article, we demonstrate how contactless resonant cavity dielectric spectroscopy may be used to differentiate between paper analytes of varying fiber species compositions, to determine the relative age of the paper, and to detect and quantify the amount of post-consumer waste (PCW) recycled fiber content in manufactured office paper.

A protocol for the non-destructive analysis of the fiber content and relative age of paper.

Temassız Rezonans Kavite Dielektrik Spektroskopik Çalışmalar için Yöntem Geliştirme Selülozik Kağıt

The current analytical techniques for characterizing printing and graphic arts substrates are largely ex situ and destructive. This limits the amount of ...