Dispersion of WS2 Nanotubes (NTs) on a Si/SiO2 Substrate
1:35
Application of WS2 Flakes to a Si/SiO2 Substrate with the Tape Method
2:28
Device Fabrication by Electron Beam Lithography
5:59
Electrode Deposition
7:17
Device Completion and Transport Measurements
8:31
Results: Transistor Operations of WS2 Nanotube and Flake Devices
9:56
Conclusion
Transkript
The overall goal of this procedure is to use electrolyte gating to control the carrier number and achieve electric-field-induced quantum phase transitions in tungsten disulfide transistors. This technique provides a powerful strategy for achieving
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Here, we present a protocol to control the carrier number in solids by using the electrolyte.