Bu araştırma 1.000 yetenekleri programı tarafından desteklenen genç Çin bilim adamları, Ulusal Doğa Bilimleri Foundation of China (Grant No. 51472164), A * STAR Pharos programı (Grant No 152 70 00014) ve gelişmiş 2B için NUS Merkezi'nden Destek Merkezi Malzemeler.

Dikkat: Bazı kimyasal maddeler ve bu çalışmada kullanılan gazlar toksik, kanserojen, yanıcı ve patlayıcı. Lütfen tüm uygun güvenlik uygulamaları mühendislik kontrolleri (duman hood) ve kişisel koruyucu ekipman (koruyucu gözlük, profesyonel koruyucu maske, eldiven, önlük, tam uzunlukta kullanımı da dahil olmak üzere bir buhar taşıma biriktirme yerine getirirken kullanın pantolon ve kapalı-toe ayakkabı).
1. auto-Tune işlevi sıcaklığı denetleyicisi parametreleri
Not: SnSe pul sentezi önce Isıtma sistemi fırın üreticisinin takip ederek ayarlanması gerekiyor.
<ol><li>En sık kullanılan sıcaklık % 80'i hedef sıcaklık ayarlayın. Burada, 560 oC 1 h için ayarla ve fırın çalıştırın.</li>
	<li>Ne zaman sıcaklık 560 oC yaklaşımlar, anahtar için 1 2 s, "HAL" parametre açılır Not ve basın "SET" için "SET" tuşuna basın s sonraki parametrenin gitmek.</li>
	<li>Anahtarı "Ayarlama" tuşuna basmaya devam edin. Sonra "Cont = 3" görünür, 2 ayarlayın. Sistem auto-tune işlev değerini Int, Pro ve Lt için çalışmaya başlar ve sonra sistem 3'e gidecek. Yeniden otomatik ayar gerektiğinde 2 olarak ayarlayın.</li>
</ol>2. ön kuvars tüp ve seramik tekneler
Not: SnSe pul sentezi önce temizleme işlemi nerede yeni bir seramik tekne ve yeni bir kuvars tüp gereklidir yüksek sıcaklık ön işleme.
<ol><li>Yeni bir seramik botun yeni 1-inç çapında kuvars tüp içinde konumlandırın. Yeni 2 inç çapında kuvars tüp ile 1-inç çapında kuvars tüp yatay tüp fırın içine yerleştirin. Her iki ucunda da tüpler sıkıca sabit ve desteklenen emin olun.</li>
	<li>Fırın kapağını kapatın ve tüp ocağı 1000 oC 30 dk ısı.</li>
	<li>Merkezi fırın sıcaklığında 1000 oC yaklaştığında, fırın 1000 oC 30 dk tutun. Sonra yavaş yavaş tüp ocağı bir ucundan diğerine tüpü kuvars tüp duvar ve seramik tekne temizlik için tüm uzunluğu ısı taşıyın.</li>
	<li>Bundan sonra fırın çevirerek oda sıcaklığında soğumaya tüp ocağı izin. Fırın oda sıcaklığına soğuyunca fırın kapağı açın ve yeni seramik tekne ve sonraki deneyler için kullanılan yeni 1-inç çapında kuvars tüp çıkarmak.</li>
</ol>3. tedavi öncesi SiO 2 /sı yüzeylerde
<ol><li>SiO2/sı gofret (300 nm kalın SiO2 ' Si ağır katkılı) kesme ( Tablo malzemelerigörmek) büyüme yüzeyler kullanılmak üzere uygun bir boyut (1.5 cm × 2 cm) bir elmas scriber kullanarak.</li>
	<li>SiO2/sı yüzeylerde aseton, isopropanol ve bir azot darbe kuru takip su, temiz.</li>
</ol>4. toplu dikdörtgen sentezi SnSe pul şeklinde
<ol><li>Yer 0.010 g SnSe temiz seramik bota toz ( Tablo malzemelerigörmek). Bir temiz SiO2/sı substrat (1.5 cm × 2 cm) seramik teknenin büyüme yüzü SnSe toz bakacak şekilde yerleştirin. Seramik botun temiz 1-inç çapında kuvars tüp içinde konumlandırın.</li>
	<li>2-inç çapında kuvars tüp ile 1-inç çapında kuvars tüp içinde yatay tüp ocağı dışarıdan yerleştirin ve seramik teknenin akıntıya karşı tüp ocağı Isıtma bölgenin bulunduğu olduğundan emin olun. Tüp her iki ucundaki flanşlar sıkın ve 2-inç çapında kuvars tüp mühürler havalandırma vanayı kapat.</li>
	<li>Kuvars tüp, pompa hava ve nem tüp kaldırmak için ~ 1 × 10-2 mbar basınç tüp bağlanır pompa açın. Bu basınç elde sonra pompa kapatmak açın.</li>
	<li>Sonra gaz akışı denetlemek için gaz akış ölçeri kullanmayı taşıyıcı gaz valfleri açın. 40 dk (sccm) Ar her Standart küp cm ve 10 sccm H2 tanıtmak (saflık: % 99.9) atmosfer basıncı elde kadar kuvars tüp içine. Kuvars tüplerde gaz, sürekli bir akış sağlamak için havalandırma vanaları açın.</li>
	<li>Fırın kapağını kapatın ve hızla bir 35 oC başına dakika Isıtma-oranı ile tüp fırın ısı.</li>
	<li>Merkezi fırın sıcaklığında 700 oC yaklaştığında, tüp fırın fırın merkezinde SnSe tozlar konumlandırmak için acele. SnSe toz buharlaşır gider ve SnSe pul toplu SiO2/sı yüzeyinde yatıracaktır.</li>
	<li>15 dk büyüme süre sonra hızlı bir şekilde tüp ocağı için oda sıcaklığında soğumaya fırın kapağı açın. Bu arada, unreacted gaz veya parçacıklar tüpler dışarı götürmek için yardımcı olacak Ar/H2 taşıyıcı gaz için en fazla, akışını ayarlayın. Büyüme süreci tamamlandığında, toplu SnSe pul SiO2/sı yüzeylerde yüzey elde edilir.</li>
</ol>5. tek katmanlı dikdörtgen imalatı SnSe pul şeklinde
<ol><li>Toplu olarak yetiştirilen SnSe/SiO2/sı örnek yüz kadar yeni bir temiz seramik tekne yerleştirin. Seramik botun yeni bir temiz 1-inç çapında kuvars tüp içinde konumlandırın.</li>
	<li>2-inç çapında kuvars tüp ile 1-inç çapında kuvars tüp yatay tüp fırın içerisine bulunan seramik tekne ile koymak tüp ocağı Isıtma alanı ters yönde. Tüp her iki ucundaki flanşlar sıkın ve 2-inç çapında kuvars tüp imzalamaya havalandırma vanayı kapat.</li>
	<li>Kuvars tüp, tüp hava ve nem kaldırmak için ~ 1 × 10-2 mbar basınç tüp aşağı pompa bağlanır pompa açın. Bu elde edilir sonra pompa kapatmak açın.</li>
	<li>Gaz akış metre gaz akışı denetlemek için kullanma taşıyıcı gaz vanaları açın. 50 sccm N2 tanıtmak (saflık: % 99.9) atmosfer basıncı elde kadar kuvars tüp içine. Kuvars tüplerde gaz, sürekli bir akış sağlamak için havalandırma vanaları açın.</li>
	<li>Fırın kapağını kapatın ve hızla tüp ocağı 700 oC 20 dk içinde ısı.</li>
	<li>Merkezi fırın sıcaklığında 700 oC yaklaştığında, tüp fırın fırın merkezinde toplu SnSe/SiO2/sı örnek konumlandırmak için acele.</li>
	<li>Fırını 700 oC Dağlama işlemini tamamlamak ~ 5-20 dk, korumak. Bundan sonra fırın kapağı açın ve hızlı bir şekilde serin tüp ocağı için oda sıcaklığında. Bu arada, N2 gaz akışını sürücü unreacted gaz veya parçacıklar dışarı tüpler için yardımcı olacak en fazla, devam et. Aşındırma işlemi tamamlandığında, SiO2/sı yüzeylerde yüzey üzerinde elde edilen tek katmanlı dikdörtgen şekilli SnSe pul gözlemlemek. Not: Gravür gaz ve gravür saat bu süreçte ana kontrol eden faktörler vardır. Gravür mekanizması başvuru 29 araştırdık, yani 29 daha fazla bilgi için bkz.</li>
</ol>

<ol>
	<li>Geim, A. K., Novoselo, K. S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=The+Rise+of+Graphene.">The Rise of Graphene.</a> Nature Mater. 6, 183-191 (2007).</li><li>Chhowalla, M., Shin, H. S., Eda, G., Li, L. -. J., Loh, K. P., Zhang, H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=The+Chemistry+of+Two-Dimensional+Layered+Transition+Metal+Dichalcogenide+Nanosheets.">The Chemistry of Two-Dimensional Layered Transition Metal Dichalcogenide Nanosheets.</a> Nat. Chem. 5, 263-275 (2013).</li><li>Zhang, W., Wang, Q., Chen, Y., Wang, Z., Wee, A. T. S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Van+der+Waals+Stacked+2D+Layered+Materials+for+Optoelectronics.">Van der Waals Stacked 2D Layered Materials for Optoelectronics.</a> 2D Mater. 3 (1-17), 02200 (2016).</li><li>Li, M. -. Y., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Epitaxial+Growth+of+a+Monolayer+WSe2-MoS2+Lateral+p-n+Junction+with+an+Atomically+Sharp+Interface.">Epitaxial Growth of a Monolayer WSe2-MoS2 Lateral p-n Junction with an Atomically Sharp Interface.</a> Science. 349, 524-528 (2015).</li><li>Wang, H., Yuan, H., Hong, S. S., Li, Y., Cui, Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Physical+and+Chemical+Tuning+of+Two-Dimensional+Transition+Metal+Dichalcogenides.">Physical and Chemical Tuning of Two-Dimensional Transition Metal Dichalcogenides.</a> Chem. Soc. Rev. 44, 2664-2680 (2015).</li><li>Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., Strano, M. S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Electronics+and+Optoelectronics+of+Two-Dimensional+Transition+Metal+Dichalcogenides.">Electronics and Optoelectronics of Two-Dimensional Transition Metal Dichalcogenides.</a> Nat.Nanotechnol. 7, 699-712 (2012).</li><li>Kim, K. S., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Large-Scale+Pattern+Growth+of+Graphene+Films+for+Stretchable+Transparent+Electrodes.">Large-Scale Pattern Growth of Graphene Films for Stretchable Transparent Electrodes.</a> Nature. 457, 706-710 (2009).</li><li>Shalom, M., Gimenez, S., Schipper, F., Herraiz-Cardona, I., Bisquert, J., Antonietti, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Controlled+Carbon+Nitride+Growth+on+Surfaces+for+Hydrogen+Evolution+Electrodes.">Controlled Carbon Nitride Growth on Surfaces for Hydrogen Evolution Electrodes.</a> Angew. Chem. 126, 3728-3732 (2014).</li><li>Liu, J., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Metal-Free+Efficient+Photocatalyst+for+Stable+Visible+Water+Splitting+via+a+Two-Electron+Pathway.">Metal-Free Efficient Photocatalyst for Stable Visible Water Splitting via a Two-Electron Pathway.</a> Science. 347, 970-974 (2015).</li><li>Jiang, J., Zou, J., Wee, A. T. S., Zhang, W. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Use+of+Single-Layer+g-C3N4/Ag+Hybrids+for+Surface-Enhanced+Raman+Scattering+(SERS).">Use of Single-Layer g-C3N4/Ag Hybrids for Surface-Enhanced Raman Scattering (SERS).</a> Sci.Rep. 6 (1-10), 34599 (2016).</li><li>Jiang, J., Zhu, L., Zou, J., Ou-yang, L., Zheng, A., Tang, H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Micro/Nano-Structured+Graphitic+Carbon+Nitride-Ag+Nanoparticle+Hybrids+as+Surface-Enhanced+Raman+Scattering+Substrates+with+Much+Improved+Long-Term+Stability.">Micro/Nano-Structured Graphitic Carbon Nitride-Ag Nanoparticle Hybrids as Surface-Enhanced Raman Scattering Substrates with Much Improved Long-Term Stability.</a> Carbon. 87, 193-205 (2015).</li><li>Jariwala, D., Marks, T. J., Hersam, M. C. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Mixed-dmensional+van+der+Waals+Heterostructures.">Mixed-dmensional van der Waals Heterostructures.</a> Nature Mater. 16, 170-181 (2017).</li><li>Late, D. J., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=GaS+and+GaSe+Ultrathin+Layer+Transistors.">GaS and GaSe Ultrathin Layer Transistors.</a> Adv. Mater. 24, 3549-3554 (2012).</li><li>Klein, A., Lang, O., Schlaf, R., Pettenkofer, C., Jaegermann, W. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Electronically+Decoupled+Films+of+InSe+Prepared+by+van+der+Waals+Epitaxy:+Localized+and+Delocalized+Valence+States.">Electronically Decoupled Films of InSe Prepared by van der Waals Epitaxy: Localized and Delocalized Valence States.</a> Phys. Rev. Lett. 80, 361-364 (1998).</li><li>Gomes, L. C., Carvalho, A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Phosphorene+Analogues:+Isoelectronic+Two-Dimensional+Group-IV+Monochalcogenides+with+Orthorhombic+Structure.">Phosphorene Analogues: Isoelectronic Two-Dimensional Group-IV Monochalcogenides with Orthorhombic Structure.</a> Phys. Rev. B. 92 (1-8), 085406 (2015).</li><li>Xue, D., Tan, J., Hu, J., Hu, W., Guo, Y., Wan, L. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Anisotropic+Photoresponse+Properties+of+Single+Micrometer-Sized+GeSe+Nanosheet.">Anisotropic Photoresponse Properties of Single Micrometer-Sized GeSe Nanosheet.</a> Adv. Mater. 24, 4528-4533 (2012).</li><li>Antunez, P. D., Buckley, J. J., Brutchey, R. L. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Tin+and+Germanium+Monochalcogenide+IV-VI+Semiconductor+Nanocrystals+for+Use+in+Solar+Cells.">Tin and Germanium Monochalcogenide IV-VI Semiconductor Nanocrystals for Use in Solar Cells.</a> Nanoscale. 3, 2399-2411 (2011).</li><li>Zhao, L. D., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Ultralow+Thermal+Conductivity+and+High+Thermoelectric+Figure+of+Merit+in+SnSe+Crystals.">Ultralow Thermal Conductivity and High Thermoelectric Figure of Merit in SnSe Crystals.</a> Nature. 508, 373-377 (2014).</li><li>Zhao, L. D., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Ultrahigh+Power+Factor+and+Thermoelectric+Performance+in+Hole-Doped+Single-Crystal+SnSe.">Ultrahigh Power Factor and Thermoelectric Performance in Hole-Doped Single-Crystal SnSe.</a> Science. 351, 141-144 (2016).</li><li>Bhatt, V. P., Gireesan, K., Pandya, G. R. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Growth+and+Characterization+of+SnSe+and+SnSe2+Single+Crystals.">Growth and Characterization of SnSe and SnSe2 Single Crystals.</a> J. Cryst. Growth. 96, 649-651 (1989).</li><li>Yu, J. G., Yue, A. S., Stafsudd, O. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Growth+and+Electronic+Properties+of+the+SnSe+Semiconductor.">Growth and Electronic Properties of the SnSe Semiconductor.</a> J. Cryst. Growth. 54, 248-252 (1981).</li><li>Zhang, L., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Tinselenidene:+a+Two-dimensional+Auxetic+Material+with+Ultralow+Lattice+Thermal+Conductivity+and+Ultrahigh+Hole+Mobility.">Tinselenidene: a Two-dimensional Auxetic Material with Ultralow Lattice Thermal Conductivity and Ultrahigh Hole Mobility.</a> Sci. Rep. 6 (1-9), (2016).</li><li>Liu, X., Li, Y., Zhou, B., Wang, X., Cartwright, A. N., Swihart, M. T. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Shape-Controlled+Synthesis+of+SnE+(E=S,+Se)+Semiconductor+Nanocrystals+for+Optoelectronics.">Shape-Controlled Synthesis of SnE (E=S, Se) Semiconductor Nanocrystals for Optoelectronics.</a> Chem. Mater. 26, 3515-3521 (2014).</li><li>Franzman, M. A., Schlenker, C. W., Thompson, M. E., Brutchey, R. L. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Solution-Phase+Synthesis+of+SnSe+Nanocrystals+for+Use+in+Solar+Cells.">Solution-Phase Synthesis of SnSe Nanocrystals for Use in Solar Cells.</a> J. Am. Chem. Soc. 132, 4060-4061 (2010).</li><li>Baumgardner, W. J., Choi, J. J., Lim, Y. -. F., Hanrath, T. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=SnSe+Nanocrystals:+Synthesis,+Structure,+Optical+Properties,+and+Surface+Chemistry.">SnSe Nanocrystals: Synthesis, Structure, Optical Properties, and Surface Chemistry.</a> J. Am. Chem. Soc. 132, 9519-9521 (2010).</li><li>Boscher, N. D., Carmalt, C. J., Palgrave, R. G., Parkin, I. P. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Atmospheric+Pressure+Chemical+Vapour+Deposition+of+SnSe+and+SnSe+2+Thin+Films+on+Glass.">Atmospheric Pressure Chemical Vapour Deposition of SnSe and SnSe 2 Thin Films on Glass.</a> Thin Solid Films. 516, 4750-4757 (2008).</li><li>Zhao, S., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Controlled+Synthesis+of+Single-Crystal+SnSe+Nanoplates.">Controlled Synthesis of Single-Crystal SnSe Nanoplates.</a> Nano Res. 8, 288-295 (2015).</li><li>Li, L., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Single-Layer+Single-Crystalline+SnSe+Nanosheets.">Single-Layer Single-Crystalline SnSe Nanosheets.</a> J. Am. Chem. Soc. 135, 1213-1216 (2013).</li><li>Jiang, J., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Two-Step+Fabrication+of+Single-Layer+Rectangular+SnSe+Flakes.">Two-Step Fabrication of Single-Layer Rectangular SnSe Flakes.</a> 2D Mater. 4 (1-9), 021026 (2017).</li></ol>

İfşa etmek yok.

Burada, buharı taşıma biriktirme yöntemi ve bir azot tekniği bir atmosferik basınç sisteminde aşındırma ile birlikte ilk bildirilmektedir. Bu protokol için tek katmanlı SnSe pul imalatı bölümünü önemli adımlardır.
Her ne kadar bir yüksek kaliteli tek katmanlı örnek oluşturmak üzere toplu örnekleri kazınmış, toplu örnekleri kalınlığı tek tip olmalı ve toplu örnekleri ayrışma sıcaklığını gravür sıcaklık yüksek olmalıdır. Elde edilen örnek tamamen...

İki boyutlu (2D) malzeme içine araştırma grafen, 2D malzemeler üzerinde onların toplu karşılıkları1 üstün elektrik, optik ve mekanik özelliklere sahip olma olasılığı nedeniyle başarılı yalıtım beri son yıllarda bloomed , 2 , 3 , 4 , 5. opto-elektronik ve elektronik cihazlar6,7, kataliz ve8,9, Raman yüzey Gelişmiş bölme su 2D malzemeler göstermektedir umut verici uygulamalar saçılma algılama 10,11, vb 2D Malzeme Into Bakımı katmanlı malzemelerin büyük bir aile göstermek büyük çeşitlilik, yarı metalik Grafin yarıiletken Geçiş metalleri dichalcogenides (TMDs değişen ) ve siyah fosfor (BP) yalıtım altıgen bor nitrit (h-BN) için. Bu malzeme ve onların heterostructures de son yıllarda okudu ve birçok yeni özellikleri ve uygulamaları12sergiledik. Diğer daha az okudu ama aynı derecede 2D umut verici katmanlı IIIa malzemelerinde-VIA (gaz, GaSe ve b)13,14 ve IVA-(GeS, GeSe ve SnS)15VIA,16,17 aileleri var. Ayrıca son zamanlarda alınan dikkat.
SnSe ait olduğu için IVA-grubu aracılığıyla ve pnma alan grubunda düzenlenmiş ve phosphorene kristal yapısı gibi katman içinde bükülmüş atomları ile bir Ortorombik yapısında billurlaşır. SnSe dar boşluk yarı iletken bir grup boşluk 0.6 ev ile olmakla birlikte, daha iyi bilinen onun daha fazla benzersiz termoelektrik özellikleri olduğu gibi 923 K18,19 , 2.6, çok yüksek bir ZT (termoelektrik hak rakam) değere sahip olarak bildirilmektedir , hangi atfedilen benzersiz elektronik yapısını ve düşük ısı iletkenlik için. Kristalleri ticari olarak kullanılabilir ve bilinen yöntemler tarafından yetiştirilen SnSe toplu Deal-Stockbarger yöntemi20 veya kimyasal buharı taşıma yöntemi gibi büyük büyüyen21, az katlı ve tek katmanlı SnSe Dielektrik üzerinde boy daha zor yüzeylerde var. Çok odaklı pirolitik grafit (HOPG), Mika, SiO2, Si3N4ve cam gibi 2D malzeme büyümeyi desteklemek üzere çok sayıda yüzeylerde vardır. Bu alan - etkisi transistörler, imalatı nerede Dielektrik elektrik arka kapıyı bir parçası olarak hizmet sağlar düşük maliyetli SiO2 Dielektrik en sık substrat, kullanılan şunlardır. Toplu SnSe bağlama enerji22 32 meV'interlayer yüksek olduğu gibi bizim deneyim, aksine grafen ve TMDs, bu kaç katmanlı ya da tek katmanlı SnSe pul micromechanical pul pul dökülme yöntemiyle elde etmek zordur / kalın için açan2, Å katmanlar, pullu pul kenarları boyunca bile. Özellikle SnSe bu yana bu nedenle, birkaç katman ve tek katmanlı SnSe roman elektronik özelliklerini incelemek için yüzeylerde yalıtım üzerinde yüksek kaliteli büyük ölçekli tek katmanlı SnSe kristalleri hazırlamak için yeni, basit ve düşük maliyetli sentetik bir yöntemi gereklidir termoelektrik enerji dönüşümü düşük ve orta sıcaklık aralığı19başvurularda adayı olarak gösterilen büyük söz.
Çeşitli araştırmacılar yüksek kaliteli SnSe kristalleri sentezlemek için yöntemler geliştirdik. Liu vd. 23 ve Franzman vd. 24 SnSe nanocrystals kuantum nokta, nanoplates, tek kristal nanosheets, nanoflowers ve SnCl2 ve alkil-fosfamin-selenyum veya dialkyl kullanarak nanopolyhedra gibi farklı şekiller sentezlemek için bir çözüm fazlı metodu öncüleri olarak diselenium. Baumgardner vd. sıcak trioctylphosphine bis[bis(trimethylsilyl)amino]tin(II) enjekte edilerek 25 kolloidal SnSe nano tanecikleri sentez ve nanocrystals ~ 4-10 nm çapında elde ettiler. Boscher vd. 26 SnSe Filmler cam yüzeylerde bir teneke tetraklorür oranı 10 Dietil selenit onların sentezlenmiş büyük ve teneke tetraklorür ve Dietil selenit öncüleri kullanarak elde etmek için bir atmosfer basıncı kimyasal Buhar biriktirme tekniği kullanılan SnSe filmler vardı yaklaşık 100 nm kalın ve Gümüş-Siyah görünüşte. Zhao vd. 27 kullanılan taşıma ifade bir düşük vakum sistemi Buhar ve tek-kristal SnSe nanoplates Mika yüzeyler üzerinde sentezlenmiş ve 1-6 µm kare nanoplates elde. Ancak, tek katmanlı SnSe alma kristalleri bu teknikleri kullanarak mümkün değildir. Li vd. 28 tek katmanlı tek-kristal SnSe nanosheets SnCl4 ve SeO2 Kara filmin tarih öncesi bir one-pot sentetik yöntemi kullanarak başarılı bir şekilde sentezledim. Ancak, onlar sadece bir yanal boyutu yaklaşık 300 almak başardık nm onların nanosheets için. Biz son zamanlarda bizim yöntem yüksek kalite, faz saf29olan büyük ölçekli tek katmanlı SnSe kristalleri büyümek için yayımlanmıştır. Bu ayrıntılı iletişim kuralı yeni uygulayıcıları Bu metodoloji kullanarak diğer büyük-büyüklük yüksek-nitelik ultrathin 2D malzemeleri büyümeye yardımcı olmak içindir.

<table border="0" cellpadding="0" cellspacing="0" width="1083">
	<tbody>
		<tr height="21">
			<td height="21" style="height:21px;width:283px;">SnSe powder&#160;&#160;</td>
			<td style="width:295px;">Sigma-Aldrich</td>
			<td style="width:159px;">1315-06-6</td>
			<td style="width:347px;">(99.999%) toxic, carcinogenic</td>
		</tr>
		<tr height="28">
			<td height="28" style="height:28px;width:283px;">Ar gas</td>
			<td style="width:295px;"></td>
			<td style="width:159px;"></td>
			<td>explosive</td>
		</tr>
		<tr height="32">
			<td height="32" style="height:32px;width:283px;">H2 gas</td>
			<td style="width:295px;"></td>
			<td style="width:159px;"></td>
			<td>flammable, explosive</td>
		</tr>
		<tr height="32">
			<td height="32" style="height:32px;">SiO2/Si wafer</td>
			<td style="width:295px;"></td>
			<td style="width:159px;"></td>
			<td>300 nm thick SiO2 on heavily doped Si</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Acetone</td>
			<td style="width:295px;">Sigma-Aldrich</td>
			<td>67-64-1</td>
			<td>toxic, flammable</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Isopropanol</td>
			<td style="width:295px;">Sigma-Aldrich</td>
			<td>67-63-0</td>
			<td>flammable</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Quartz tube</td>
			<td>Dongjing Quartz Company, China</td>
			<td style="width:159px;"></td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:283px;">Ceramic boat</td>
			<td style="width:295px;">Dongjing Quartz Company, China</td>
			<td style="width:159px;"></td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:283px;">Optical microscope</td>
			<td style="width:295px;">Olympus, BX51</td>
			<td style="width:159px;"></td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:283px;">Atomic force microscopy</td>
			<td style="width:295px;">Bruker&#160;</td>
			<td style="width:159px;"></td>
			<td>Using FastScan-A probe type&#160; and ScanAsyst-air</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:283px;">Scanning electron microscopy&#160;</td>
			<td style="width:295px;">JEOL JSM-6700F</td>
			<td style="width:159px;"></td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:283px;">transmission electron microscopy</td>
			<td style="width:295px;">FEI Titan</td>
			<td style="width:159px;"></td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:283px;">Tube furnace</td>
			<td style="width:295px;">MTI Corporation</td>
			<td style="width:159px;"></td>
			<td></td>
		</tr>
	</tbody>
</table>

atmospheric pressure fabrication of large-sized single-layer rectangular snse flakes

Teneke selenit (SnSe) phosphorene gibi bükülmüş bir yapı ile katmanlı metal chalcogenide malzemelerin ailesine ait olduğu ve iki boyutlu nanoelektronik aygıt içinde uygulamalar için potansiyel göstermiştir. Her ne kadar SnSe nanocrystals sentezlemek için pek çok yöntem geliştirdik, tek katmanlı SnSe pul büyüklüğünde imal etmek basit bir şekilde büyük bir mücadele kalır. Burada, biz doğrudan büyük boyutlu tek bir atmosfer basıncı kuvars tüpünde basit iki aşamalı imalat yöntemiyle yüzeylerde yalıtım sık kullanılan SiO2/sı üzerinde dikdörtgen SnSe pul kat büyümeye deneysel yöntem gösteriyor fırın sistemi. Tek katmanlı dikdörtgen SnSe ~6.8 Å bir ortalama kalınlık ile pul ve yanal boyutları yaklaşık 30 µm × 50 µm buharı taşıma ifade tekniği ve azot gravür rota a kombinasyonu tarafından fabrikasyon. Morfoloji, mikroyapı ve dikdörtgen SnSe pul elektriksel özellikleri ile karakterize ve mükemmel crystallinity ve iyi elektronik özellikleri elde etmek. İki aşamalı imalat yöntemi ile ilgili bu madde bir atmosferik basınç sistemi kullanarak diğer iki boyutlu, büyük ölçekli, tek katmanlı malzeme benzer büyümek araştırmacılar yardımcı olabilir.

Deneysel cihazları, optik görüntü, Atomik Kuvvet Mikroskobu (AFM) görüntüleri, elektron mikroskobu (SEM) görüntüleri taramak ve transmisyon elektron mikroskobu (TEM) görüntüleri uydurma SnSe pul şematik diyagramların şekil 1' de gösterilen, Şekil 2ve şekil 3. Optik görüntüleri geleneksel optik mikroskop tarafından gerçekleştirilir. Mercek lens 10 X 20 X, 50 X ve 100 X objekti...

Watch this Scientific Journal Video about Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes at JoVE.com

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Bir iletişim kuralı büyük boyutlu tek bir atmosfer basıncı quartz tüp ocağı sisteminde düşük maliyetli SiO2/sı Dielektrik gofret üzerinde dikdörtgen şekilli SnSe pul kat büyümek için bir iki aşamalı imalat tekniği gösteren sunulur.

Tek katmanlı dikdörtgen SnSe büyük ölçekli pul imalatı atmosfer basıncı

Tin selenide (SnSe) belongs to the family of layered metal chalcogenide materials with a buckled structure like phosphorene, and has shown potential for ...

atmospheric-pressure-fabrication-large-sized-single-layer-rectangular

Research

JoVE Journal

Engineering

8.1K Görüntüleme.  Shenzhen University. Bir iletişim kuralı büyük boyutlu tek bir atmosfer basıncı quartz tüp ocağı sisteminde düşük maliyetli SiO2/sı Dielektrik gofret üzerinde dikdörtgen şekilli SnSe pul kat büyümek için bir iki aşamalı imalat tekniği gösteren sunulur.

Video: Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Fabrication of Spatially Confined Complex Oxides

Complex materials such as high Tc superconductors, multiferroics, and colossal magnetoresistors have electronic and magnetic properties that arise from the inherent strong electron correlations that reside within them. These materials can also possess electronic phase separation in which regions of vastly different resistive and magnetic behavior can coexist within a single crystal alloy material. By reducing the scale of these materials to length scales at and below the inherent size of the electronic domains, novel behaviors can be exposed. Because of this and the fact that spin-charge-lattice-orbital order parameters each involve correlation lengths, spatially reducing these materials for transport measurements is a critical step in understanding the fundamental physics that drives complex behaviors. These materials also offer great potential to become the next generation of electronic devices 1-3. Thus, the fabrication of low dimensional nano- or micro-structures is extremely important to achieve new functionality. This involves multiple controllable processes from high quality thin film growth to accurate electronic property characterization. Here, we present fabrication protocols of high quality microstructures for complex oxide manganite devices. Detailed descriptions and required equipment of thin film growth, photo-lithography, and wire-bonding are presented.

We describe the use of pulsed laser deposition (PLD), photolithography and wire-bonding techniques to create micrometer scale complex oxides devices. The PLD is utilized to grow epitaxial thin films. Photolithography and wire-bonding techniques are introduced to create practical devices for measurement purposes.

Mekansal Kapalı Karmaşık Oksitler Fabrikasyon

Complex materials such as high Tc superconductors, multiferroics, and colossal magnetoresistors have electronic and magnetic properties that arise from ...

Mühendislik

Synthesis and Microdiffraction at Extreme Pressures and Temperatures

High pressure compounds and polymorphs are investigated for a broad range of purposes such as determine structures and processes of deep planetary interiors, design materials with novel properties, understand the mechanical behavior of materials exposed to very high stresses as in explosions or impacts. Synthesis and structural analysis of materials at extreme conditions of pressure and temperature entails remarkable technical challenges. In the laser heated diamond anvil cell (LH-DAC), very high pressure is generated between the tips of two opposing diamond anvils forced against each other; focused infrared laser beams, shined through the diamonds, allow to reach very high temperatures on samples absorbing the laser radiation. When the LH-DAC is installed in a synchrotron beamline that provides extremely brilliant x-ray radiation, the structure of materials under extreme conditions can be probed in situ. LH-DAC samples, although very small, can show highly variable grain size, phase and chemical composition. In order to obtain the high resolution structural analysis and the most comprehensive characterization of a sample, we collect diffraction data in 2D grids and combine powder, single crystal and multigrain diffraction techniques. Representative results obtained in the synthesis of a new iron oxide, Fe4O5 1 will be shown.

The laser heated diamond anvil cell combined with synchrotron micro-diffraction techniques allows researchers to explore the nature and properties of new phases of matter at extreme pressure and temperature (PT) conditions. Heterogeneous samples can be characterized in situ under high pressure by 2D mapping and combined powder, single-crystal and multigrain diffraction approaches.

Aşırı basınç ve Sıcaklıklarda sentezi ve mikrodifraksiyon

High pressure compounds and polymorphs are investigated for a broad range of purposes such as determine structures and processes of deep planetary ...

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

The application of femtosecond four-wave mixing to the study of fundamental properties of diluted magnetic semiconductors ((s,p)-d hybridization, spin-flip scattering) is described, using experiments on GaMnAs as a prototype III-Mn-V system.&#160; Spectrally-resolved and time-resolved experimental configurations are described, including the use of zero-background autocorrelation techniques for pulse optimization.&#160; The etching process used to prepare GaMnAs samples for four-wave mixing experiments is also highlighted.&#160; The high temporal resolution of this technique, afforded by the use of short (20 fsec) optical pulses, permits the rapid spin-flip scattering process in this system to be studied directly in the time domain, providing new insight into the strong exchange coupling responsible for carrier-mediated ferromagnetism.&#160; We also show that spectral resolution of the four-wave mixing signal allows one to extract clear signatures of (s,p)-d hybridization in this system, unlike linear spectroscopy techniques.&#160;&#160; This increased sensitivity is due to the nonlinearity of the technique, which suppresses defect-related contributions to the optical response. This method may be used to measure the time scale for coherence decay (tied to the fastest scattering processes) in a wide variety of semiconductor systems of interest for next generation electronics and optoelectronics.

The technique of femtosecond four-wave mixing is described, including spectrally-resolved and time-resolved configurations. We illustrate the utility of this technique for the investigation of crucial physical properties in the III-V diluted magnetic semiconductors, afforded by its nonlinearity and high temporal resolution.

The application of femtosecond four-wave mixing to the study of fundamental properties of diluted magnetic semiconductors ((s,p)-d hybridization, ...

Fabrication and Testing of Microfluidic Optomechanical Oscillators

Cavity optomechanics experiments that parametrically couple the phonon modes and photon modes have been investigated in various optical systems including microresonators. However, because of the increased acoustic radiative losses during direct liquid immersion of optomechanical devices, almost all published optomechanical experiments have been performed in solid phase. This paper discusses a recently introduced hollow microfluidic optomechanical resonator. Detailed methodology is provided to fabricate these ultra-high-Q microfluidic resonators, perform optomechanical testing, and measure radiation pressure-driven breathing mode and SBS-driven whispering gallery mode parametric vibrations. By confining liquids inside the capillary resonator, high mechanical- and optical- quality factors are simultaneously maintained.

Parametric optomechanical excitations have recently been experimentally demonstrated in microfluidic optomechanical resonators by means of optical radiation pressure and stimulated Brillouin scattering. This paper describes the fabrication of these microfluidic resonators along with methodologies for generating and verifying optomechanical oscillations.

Fabrikasyon ve mikroakışkan optomechanical Osilatörler Testi

Cavity optomechanics experiments that parametrically couple the phonon modes and photon modes have been investigated in various optical systems including ...

How to Ignite an Atmospheric Pressure Microwave Plasma Torch without Any Additional Igniters

This movie shows how an atmospheric pressure plasma torch can be ignited by microwave power with no additional igniters. After ignition of the plasma, a stable and continuous operation of the plasma is possible and the plasma torch can be used for many different applications. On one hand, the hot (3,600 K gas temperature) plasma can be used for chemical processes and on the other hand the cold afterglow (temperatures down to almost RT) can be applied for surface processes. For example chemical syntheses are interesting volume processes. Here the microwave plasma torch can be used for the decomposition of waste gases which are harmful and contribute to the global warming but are needed as etching gases in growing industry sectors like the semiconductor branch. Another application is the dissociation of CO2. Surplus electrical energy from renewable energy sources can be used to dissociate CO2 to CO and O2. The CO can be further processed to gaseous or liquid higher hydrocarbons thereby providing chemical storage of the energy, synthetic fuels or platform chemicals for the chemical industry. Applications of the afterglow of the plasma torch are the treatment of surfaces to increase the adhesion of lacquer, glue or paint, and the sterilization or decontamination of different kind of surfaces. The movie will explain how to ignite the plasma solely by microwave power without any additional igniters, e.g., electric sparks. The microwave plasma torch is based on a combination of two resonators &#8212; a coaxial one which provides the ignition of the plasma and a cylindrical one which guarantees a continuous and stable operation of the plasma after ignition. The plasma can be operated in a long microwave transparent tube for volume processes or shaped by orifices for surface treatment purposes.

This movie shows how an atmospheric plasma torch can be ignited by microwaves with no additional igniters and provides a stable and continuous plasma operation suitable for plenty of applications.

Nasıl herhangi bir ilave Ateşleyici olmadan bir Atmosferik Basınç Mikrodalga Plazma Torch tutuşturmak için

This movie shows how an atmospheric pressure plasma torch can be ignited by microwave power with no additional igniters. After ignition of the plasma, a ...

Atomically Traceable Nanostructure Fabrication

Reducing the scale of etched nanostructures below the 10 nm range eventually will require an atomic scale understanding of the entire fabrication process being used in order to maintain exquisite control over both feature size and feature density. Here, we demonstrate a method for tracking atomically resolved and controlled structures from initial template definition through final nanostructure metrology, opening up a pathway for top-down atomic control over nanofabrication. Hydrogen depassivation lithography is the first step of the nanoscale fabrication process followed by selective atomic layer deposition of up to 2.8 nm of titania to make a nanoscale etch mask. Contrast with the background is shown, indicating different mechanisms for growth on the desired patterns and on the H passivated background. The patterns are then transferred into the bulk using reactive ion etching to form 20 nm tall nanostructures with linewidths down to ~6 nm. To illustrate the limitations of this process, arrays of holes and lines are fabricated. The various nanofabrication process steps are performed at disparate locations, so process integration is discussed. Related issues are discussed including using fiducial marks for finding nanostructures on a macroscopic sample and protecting the chemically reactive patterned Si(100)-H surface against degradation due to atmospheric exposure.

We report a protocol for combining the atomic metrology of the Scanning Tunneling Microscope for surface patterning with selective Atomic Layer Deposition and Reactive Ion Etching. Using a robust process involving numerous atmospheric exposures and transport, 3D nanostructures with atomic metrology are fabricated.

Atomik İzlenebilir Nanoyapı İmalatı

Reducing the scale of etched nanostructures below the 10 nm range eventually will require an atomic scale understanding of the entire fabrication process ...

Blast Quantification Using Hopkinson Pressure Bars

Near-field blast load measurement presents an issue to many sensor types as they must endure very aggressive environments and be able to measure pressures up to many hundreds of megapascals. In this respect the simplicity of the Hopkinson pressure bar has a major advantage in that while the measurement end of the Hopkinson bar can endure and be exposed to harsh conditions, the strain gauge mounted to the bar can be affixed some distance away. This allows protective housings to be utilized which protect the strain gauge but do not interfere with the measurement acquisition. The use of an array of pressure bars allows the pressure-time histories at discrete known points to be measured. This article also describes the interpolation routine used to derive pressure-time histories at un-instrumented locations on the plane of interest. Currently the technique has been used to measure loading from high explosives in free air and buried shallowly in various soils.

This protocol details the use of Hopkinson pressure bars to measure reflected blast loading from near-field explosive events. It is capable of interpolating a pressure-time history at any point on a reflective boundary and as such can be used to fully characterize the spatial and temporal variations in loading produced.

Blast Ölçümü Hopkinson Basınç Barlar kullanma

Near-field blast load measurement presents an issue to many sensor types as they must endure very aggressive environments and be able to measure pressures ...

Fabrication and Characterization of Superconducting Resonators

Superconducting microwave resonators are of interest for a wide range of applications, including for their use as microwave kinetic inductance detectors (MKIDs) for the detection of faint astrophysical signatures, as well as for quantum computing applications and materials characterization. In this paper, procedures are presented for the fabrication and characterization of thin-film superconducting microwave resonators. The fabrication methodology allows for the realization of superconducting transmission-line resonators with features on both sides of an atomically smooth single-crystal silicon dielectric. This work describes the procedure for the installation of resonator devices into a cryogenic microwave testbed and for cool-down below the superconducting transition temperature. The set-up of the cryogenic microwave testbed allows one to do careful measurements of the complex microwave transmission of these resonator devices, enabling the extraction of the properties of the superconducting lines and dielectric substrate (e.g., internal quality factors, loss and kinetic inductance fractions), which are important for device design and performance.

Superconducting microwave resonators are of interest for detection of light, quantum computing applications and materials characterization. This work presents a detailed procedure for fabrication and characterization of superconducting microwave resonator scattering parameters.

Süperiletken Rezonatörler Fabrikasyon ve Karakterizasyonu

Superconducting microwave resonators are of interest for a wide range of applications, including for their use as microwave kinetic inductance detectors ...

An Atmospheric Pressure Plasma Setup to Investigate the Reactive Species Formation

Non-thermal atmospheric pressure (&#39;cold&#39;) plasmas have received increased attention in recent years due to their significant biomedical potential. The reactions of cold plasma with the surrounding atmosphere yield a variety of reactive species, which can define its effectiveness. While efficient development of cold plasma therapy requires kinetic models, model benchmarking needs empirical data. Experimental studies of the source of reactive species detected in aqueous solutions exposed to plasma are still scarce. Biomedical plasma is often operated with He or Ar feed gas, and a specific interest lies in investigation of the reactive species generated by plasma with various gas admixtures (O2, N2, air, H2O vapor, etc.) Such investigations are very complex due to difficulties in controlling the ambient atmosphere in contact with the plasma effluent. In this work, we addressed common issues of &#39;high&#39; voltage kHz frequency driven plasma jet experimental studies. A reactor was developed allowing the exclusion of ambient atmosphere from the plasma-liquid system. The system thus comprised the feed gas with admixtures and the components of the liquid sample. This controlled atmosphere allowed the investigation of the source of the reactive oxygen species induced in aqueous solutions by He-water vapor plasma. The use of isotopically labelled water allowed distinguishing between the species originating in the gas phase and those formed in the liquid. The plasma equipment was contained inside a Faraday cage to eliminate possible influence of any external field. The setup is versatile and can aid in further understanding the cold plasma-liquid interactions chemistry.

An experimental setup was created for the helium-operated kHz frequency plasma jet. The setup includes a cage for the plasma power supply and jet and an in-house built reactor to monitor plasma-induced reactive species without the interference of the ambient atmosphere.

Bir Atmosfer Basıncı Plazma Kurulum Reaktif Türler Oluşumu Araştırma

Non-thermal atmospheric pressure (&#39;cold&#39;) plasmas have received increased attention in recent years due to their significant biomedical potential. ...

New Application of an Atmospheric Pressure Plasma Jet as a Neuro-protective Agent Against Glucose Deprivation-induced Injury of SH-SY5Y Cells

The atmospheric pressure plasma jet (APPJ) has attracted the attention of many researchers from multiple disciplines in recent years because its emissions include multiple types of reactive nitrogen species (RNS) and reactive oxygen species (ROS). Our previous study has shown the cytoprotective effect of the APPJ against oxidative stress-induced injuries. The aim of the present study is to provide a detailed in vitro treatment protocol regarding the neuroprotective applications of helium APPJs on glucose deprivation-induced injury in SH-SY5Y cells. The SH-SY5Y human neuroblastoma-derived cell line was maintained in RPMI 1640 medium supplemented with 15% fetal calf serum. The culture medium was then changed to RPMI 1640 without glucose before APPJ treatment. After a 1 h incubation in a cell incubator, cell viability was determined using Cell Counting Kit 8. The results showed that, compared to the glucose deprivation group, cells treated with APPJ exhibited significantly increased cell viability in a dose-dependent manner, with 8 s/well observed as an optimal dose. Meanwhile, helium flow had no effect on the glucose deprivation-induced cell impairment. Our results indicated that APPJ could be potentially used as a treatment method for the diseases in the central nervous system related to glucose deprivation. This protocol could also be used as a cytoprotective application for other cells with different impairments, but the cell culture and APPJ treatment conditions should be readjusted, and the treatment dose must be relatively low.

A protocol for the neuroprotective application of low-dose atmospheric pressure plasma treatment on glucose deprivation-induced SH-SY5Y injuries.

Bir atmosferik basınç plazma Jet yeni uygulama SH-SY5Y hücrelerin glikoz yoksunluğu kaynaklı yaralanma karşı bir nöro-koruyucu ajan olarak

The atmospheric pressure plasma jet (APPJ) has attracted the attention of many researchers from multiple disciplines in recent years because its emissions ...