Results: Reduction of Threading Dislocation Density in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Conclusion
Transkript
Low-threading dislocation germanium is very important to realize high-performance silicon photonic chips. Voids at the germanium-silicone interface work as dislocation sinks to reduce the threading dislocation density. Demonstrating the procedure
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Theoretical calculation and experimental verification are proposed for a reduction of threading dislocation (TD) density in germanium epitaxial layers with semicylindrical voids on silicon. Calculations based on the interaction of TDs and surface via image force, TD measurements, and transmission electron microscope observations of TDs are presented.