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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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2.1K Views

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06:57 min

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July 17th, 2020

DOI :

10.3791/58897-v

July 17th, 2020

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Motoki Yako¹, Yasuhiko Ishikawa², Eiji Abe¹, Kazumi Wada¹^,³

¹Department of Materials Engineering, The University of Tokyo, ²Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, ³Department of Materials Science and Engineering, Massachusetts Institute of Technology

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Dislocation Reduction

Germanium Epitaxial Layers

Semicylindrical Voids

Threading Dislocation Density

Selective Epitaxial Growth

Boron doped P silicon

Silicon Dioxide

Buffered Hydrofluoric Acid

Germanium Growth

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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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