Junxi Wang

State Key Laboratory of Solid-State Lighting,
Institute of Semiconductors,
State Key Laboratory of Solid-State Lighting, Institute of Semiconductors

Chinese Academy of Sciences

BIOGRAPHY

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PUBLICATIONS

Crystal phase evolution in kinked GaN nanowires.

Nanotechnology Apr, 2020 | Pubmed ID: 31860878

Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation.

Nanoscale research letters Jul, 2009 | Pubmed ID: 20596453

Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.

Optics express Jan, 2011 | Pubmed ID: 21263645

Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching.

Optics express Feb, 2013 | Pubmed ID: 23481812

Formation and characteristics of AlGaN-based three-dimensional hexagonal nanopyramid semi-polar multiple quantum wells.

Nanoscale Jun, 2016 | Pubmed ID: 27174102

Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy.

Scientific reports 06, 2016 | Pubmed ID: 27340030

Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography.

Nanotechnology Mar, 2017 | Pubmed ID: 28103586

Nanostructure nitride light emitting diodes via the Talbot effect using improved colloidal photolithography.

Nanoscale Jun, 2017 | Pubmed ID: 28537630

Enhancing light coupling and emission efficiencies of AlGaN thin film and AlGaN/GaN multiple quantum wells with periodicity-wavelength matched nanostructure array.

Nanoscale Oct, 2017 | Pubmed ID: 28976517

Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate.

Nanoscale Mar, 2018 | Pubmed ID: 29521388

High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.

Advanced materials (Deerfield Beach, Fla.) Jul, 2018 | Pubmed ID: 29883036

Method of the out-of-band rejection improvement of the AlN based surface acoustic wave filters.

Ultrasonics Jan, 2019 | Pubmed ID: 30056273

Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence.

Nanotechnology Jan, 2019 | Pubmed ID: 30485254

Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si.

Materials (Basel, Switzerland) Nov, 2018 | Pubmed ID: 30486245

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂.

Materials (Basel, Switzerland) Dec, 2018 | Pubmed ID: 30518146

Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene.

Advanced materials (Deerfield Beach, Fla.) Jun, 2019 | Pubmed ID: 30993771

Epitaxy of III-Nitrides on β-GaO and Its Vertical Structure LEDs.

Micromachines May, 2019 | Pubmed ID: 31086010

Beyond 100 THz-spanning ultraviolet frequency combs in a non-centrosymmetric crystalline waveguide.

Nature communications Jul, 2019 | Pubmed ID: 31278261

Ultraviolet Wavelength Identification Using Energy Distribution of Hot Electrons.

ACS omega Jul, 2017 | Pubmed ID: 31457684

Surface-Polarity-Induced Spatial Charge Separation Boosts Photocatalytic Overall Water Splitting on GaN Nanorod Arrays.

Angewandte Chemie (International ed. in English) Jan, 2020 | Pubmed ID: 31670455

Enhanced Emission of Deep Ultraviolet Light-Emitting Diodes through Using Work Function Tunable Cu Nanowires as the Top Transparent Electrode.

The journal of physical chemistry letters Apr, 2020 | Pubmed ID: 32141757

INSTITUTIONS

Chinese Academy of Sciences

University of Chinese Academy of Science

JOVE ARTICLES

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Xiang Zhang^*,1,2,

Zhaolong Chen^*,3,

Hongliang Chang^1,2,

Jianchang Yan^1,2,

Shenyuan Yang^2,4,

Junxi Wang^1,2,

Peng Gao⁵,

Tongbo Wei^1,2

¹State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences,

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science,

³Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University,

⁴State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,

⁵Electron Microscopy Laboratory, School of Physics, Peking University

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Junxi Wang

.css-o250i3{font-size:18px;font-family:Open Sans,sans-serif;line-height:21.6px;}State Key Laboratory of Solid-State Lighting,Institute of Semiconductors,State Key Laboratory of Solid-State Lighting, Institute of Semiconductors

Chinese Academy of Sciences

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

State Key Laboratory of Solid-State Lighting,
Institute of Semiconductors,
State Key Laboratory of Solid-State Lighting, Institute of Semiconductors