Tongbo Wei

State Key Laboratory of Solid-State Lighting,
Institute of Semiconductors,
State Key Laboratory of Solid-State Lighting, Institute of Semiconductors

Chinese Academy of Sciences

BIOGRAPHY

Tongbo Wei has not added Biography.

If you are Tongbo Wei and would like to personalize this page please email our Author Liaison for assistance.

PUBLICATIONS

Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation.

Nanoscale research letters Jul, 2009 | Pubmed ID: 20596453

Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.

Optics express Jan, 2011 | Pubmed ID: 21263645

Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes.

Optics express Mar, 2012 | Pubmed ID: 22418563

Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface.

Optics express Aug, 2012 | Pubmed ID: 23038492

Layer-by-Layer Approach to (2+1)D Photonic Crystal Superlattice with Enhanced Crystalline Integrity.

Small (Weinheim an der Bergstrasse, Germany) Oct, 2015 | Pubmed ID: 26179658

Recent advancement on micro-/nano-spherical lens photolithography based on monolayer colloidal crystals.

Advances in colloid and interface science Feb, 2016 | Pubmed ID: 26732300

Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy.

Scientific reports 06, 2016 | Pubmed ID: 27340030

Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography.

Nanotechnology Mar, 2017 | Pubmed ID: 28103586

Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate.

Nanoscale Mar, 2018 | Pubmed ID: 29521388

High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.

Advanced materials (Deerfield Beach, Fla.) Jul, 2018 | Pubmed ID: 29883036

Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire.

Journal of the American Chemical Society 09, 2018 | Pubmed ID: 30175921

Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence.

Nanotechnology Jan, 2019 | Pubmed ID: 30485254

Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si.

Materials (Basel, Switzerland) Nov, 2018 | Pubmed ID: 30486245

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂.

Materials (Basel, Switzerland) Dec, 2018 | Pubmed ID: 30518146

Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene.

Advanced materials (Deerfield Beach, Fla.) Jun, 2019 | Pubmed ID: 30993771

Epitaxy of III-Nitrides on β-GaO and Its Vertical Structure LEDs.

Micromachines May, 2019 | Pubmed ID: 31086010

Enhancement of Heat Dissipation in Ultraviolet Light-Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer.

Advanced materials (Deerfield Beach, Fla.) Jul, 2019 | Pubmed ID: 31140651

Enhanced Emission of Deep Ultraviolet Light-Emitting Diodes through Using Work Function Tunable Cu Nanowires as the Top Transparent Electrode.

The journal of physical chemistry letters Apr, 2020 | Pubmed ID: 32141757

INSTITUTIONS

Chinese Academy of Sciences

University of Chinese Academy of Science

JOVE ARTICLES

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Xiang Zhang^*,1,2,

Zhaolong Chen^*,3,

Hongliang Chang^1,2,

Jianchang Yan^1,2,

Shenyuan Yang^2,4,

Junxi Wang^1,2,

Peng Gao⁵,

Tongbo Wei^1,2

¹State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences,

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science,

³Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University,

⁴State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,

⁵Electron Microscopy Laboratory, School of Physics, Peking University

Engineering

Privacy

Policies

Recommend to library

JoVE NEWSLETTERS

Research

JoVE Journal
Methods Collections
JoVE Encyclopedia of Experiments
Archive

Education

JoVE Core
JoVE Business
JoVE Science Education
JoVE Lab Manual
Faculty Resource Center
Faculty Site

Authors

Overview
Publishing Process
Editorial Board
Scope and Policies
Peer Review
FAQ
Submit

Librarians

Overview
Testimonials
Subscriptions
Access
Resources
Library Advisory Board
FAQ

ABOUT JoVE

Overview
Leadership
Blog
JoVE Help Center

Tongbo Wei

.css-o250i3{font-size:18px;font-family:Open Sans,sans-serif;line-height:21.6px;}State Key Laboratory of Solid-State Lighting,Institute of Semiconductors,State Key Laboratory of Solid-State Lighting, Institute of Semiconductors

Chinese Academy of Sciences

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

State Key Laboratory of Solid-State Lighting,
Institute of Semiconductors,
State Key Laboratory of Solid-State Lighting, Institute of Semiconductors