这项工作由NSF赠款DMR-0605716和DMR-1101189资助。此外，康奈尔纳米尺度科技中心被用来生长和模式氧化物。我们感谢他们的帮助。我们中的一个FMG感谢莫蒂·拉尔·鲁斯特吉教授的支持。

1. 粘结前，晶圆准备
此步骤（1.8 除外）在康奈尔纳米级设施洁净室完成。
<ol><li>使用湿氧化物工艺在标准热氧化炉中种植氧化物，以获得更好的厚度控制，实现非常薄的氧化物的干氧化过程。检查厚度，以获得与椭圆体相同的完整晶圆。</li>
	<li>为您希望蚀刻的几何形状创建一个面膜。</li>
	<li>在蚀刻的晶圆上旋转光分辨率。</li>
	<li>暴露、开发和烘烤测试晶圆，并用适当的显微镜进行检查。</li>
	<li>如果测试晶圆根据需要暴露，则蚀刻测试晶圆。氧化物厚度与横向特征维度的比例将决定湿蚀刻或干蚀刻是否合适。由于湿蚀刻是同源的，它们不会产生氧化物中的垂直壁。在许多情况下，这并不重要。如果需要垂直壁，可以使用反应离子蚀刻。如果蚀刻成功，则继续处理其他晶圆。通常，Si 和 SiO2 的疏水/亲水特性可用于查看蚀刻过程是否成功。</li>
	<li>从晶圆中取出光分辨率。对于大多数光研究者来说，这最初可以用异丙醇和丙酮来完成。然而，一些少量的电阻仍将留在晶圆上。为了实现良好的粘合，需要完全消除这种电阻。</li>
	<li>在反应离子等中使用短短的 20 分钟氧气脱氧过程。这将去除晶圆上残留的任何光分辨率。但是，这也会在裸露的硅中添加一些氧化层。这通常是1-4纳米15。</li>
	<li>钻顶部晶圆的填充孔。这可以通过钻石尖钻头和智能切割润滑完成（有关制造商详细信息的材料，请参阅材料）。用除离子水钻孔后，立即冲洗掉智能切口。钻探还可用于使用直径大于 ~0.124 厘米的钻石糊（含 3-9μm grit）进行钻探。智能切割再次可用于润滑。我们使用1000-2000 rpm的小型精密钻机。</li>
</ol>2. 粘结准备
<ol><li>为了粘结晶圆，清洁是最重要的。清洁晶圆需要采取一些步骤。首先，用 RCA 浴缸清洁。<ol>
<li>在除离子化 （DI） 水中冲洗晶圆。</li>
		<li>在"RCA"酸浴中清洁。RCA 酸浴为 H2O：H2O2：HCl，比率为 5：1：1。将晶圆置于 80 °C RCA 酸中 15 分钟，图案侧面朝上。这一步骤将消除任何金属污染。</li>
		<li>从酸中取出晶圆，在 DI 水浴中冲洗 5 分钟。</li>
		<li>接下来在"RCA"基座中进行清洁。RCA 基础为 H2O：H2O2：NH4OH，比率为 10：2：1。将晶圆放置在 80 °C RCA 底座中 15 分钟，图案侧面朝上。这一步骤将消除任何有机污染。</li>
		<li>在DI水浴中冲洗晶圆约15分钟。</li>
	</ol>
</li>
	<li>晶圆需要从 DI 水浴中取出并保持清洁，以便进行适当的粘合。这有两个步骤：<ol>
<li>首先，将晶圆与图案蚀刻的两侧对面放在一个干净的微梳子上，如 图3B所示。它们由约1毫米的特氟隆标签隔开。在晶圆缓慢旋转（约 10-60 rpm）时将除离子水喷洒约 2 分钟，以消除任何颗粒污染。此时，晶圆之间将留下一层水。这样可以防止下一步之前的粉尘污染。</li>
		<li>用透明丙烯酸盖盖住晶圆，在 3，000 rpm 时将晶圆旋转干燥约 30 分钟。使用 250 W 红外热灯帮助干燥过程。快速旋转将诱使任何颗粒污染物与水膜的弹出，如图3C。</li>
	</ol>
</li>
	<li>在取下晶圆盖子之前，通过旋转盖子来拆下分离晶圆的标签。这将使晶圆在微清洁室中与当地接触。现在，晶圆可以安全地从载体上的微清洁室中取出。晶圆之间约 1μm 的微小间隙将最大限度地减少这一步骤中的灰尘污染。此外，此时不要用钳子拾取晶圆，因为这会引发不对称粘合。相反，使用可移动的载体将晶圆输送到树干压榨机上。</li>
</ol>3. 晶圆粘结
<ol><li>使用树干压榨机和相当刚性和光滑（神经）球将两个晶圆一起压在一起。神经球用于从中向外向晶圆施加压力。这样施加的压力允许当粘合波从中心扩散时将被困的空气推出。在中心启动粘接可最大限度地减少晶圆轮廓彼此积积的压力。晶圆的自由状态平整度约为 1μm，而粘接中实现的间隙在几 nm 内是均匀的。因此，晶圆必须扭曲其自由状态，以实现这一点。<ol>
<li>使用红外光源和带 1μm 高通滤镜的探测器查找干扰边缘，检查粘结。示例图像显示在 图 4 和 图 5 中。如果粘接不良，就会出现干扰边缘（牛顿环）。如果粘接良好，可以继续执行步骤 3.3。如果粘接不畅且存在不统一性，则按以下形式进行。</li>
		<li>将电池放在光学平面上，用滤纸盖住，以保护和缓冲顶部晶圆，并将晶圆与晶圆钳一起压榨。将脱债券的"气泡"推到中间（有填充孔的地方）或边缘。在边缘附近施加力时要小心，因为晶圆可能稍微偏移到中心。因此，如果顶部晶圆悬过底部晶圆，边缘附近的压力可能会导致顶部晶圆破裂。</li>
		<li>如果粘合不规则仍然存在或灰尘颗粒明显，则通过在晶圆之间夹住剃须刀刀片来分割晶圆。从头开始重复该过程（步骤 2.1.1）。至此，粘接是可逆的。晶圆可以在 RT 上多次重新粘结，同时尝试获得可接受的粘合。</li>
	</ol>
</li>
	<li>在获得可接受的 RT 粘合后，继续对晶圆进行退化。温度超过900°C需要达到，以确保适当的退化5，6。<ol>
<li>将细胞放在石英真空夹头上，使填充孔集中在夹头的泵孔上。夹头连接到石英泵管，用于在退赛前和退赛过程中疏散细胞。这根管子延伸到炉外。疏散细胞会导致一种大气压施加到细胞上。这将有助于结合。如果炉温升高过快，泵送也有必要防止压力积聚。显著降低细胞内压力所需的时间将取决于细胞内的几何形状。</li>
		<li>为了避免氧化物在细胞外部的生长，用不反应气体（通常 为4He）清除炉室，这样不会生长氧化物。</li>
		<li>为了让菌株有时间放松，在 ~4 小时内将温度从 250-1，200 °C 提升非常重要。在 1，200 °C 停留至少 4 小时后，关闭炉子。</li>
		<li>允许系统冷却到RT。</li>
	</ol>
</li>
	<li>再次使用 图6中显示的红外光源和探测器分析细胞。如果退化进展顺利，细胞看起来会和最初放入炉子里时一样好，或者通常比最初放入炉子里时好。如果有不可接受的边缘表示粘结不良，则必须从头再重复整个过程：但是，这必须用新的晶圆完成。一旦退化，晶圆之间的键是永久性的，不可能分裂。</li>
</ol>

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D. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Superfluid-Helium+in+Porous-Media.">Superfluid-Helium in Porous-Media.</a> J. Low Temp. Phys. 87, 205-245 (1992).</li><li>Mehta, S., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Silicon+wafers+at+sub-mu+m+separation+for+confined+He-4+experiments.">Silicon wafers at sub-mu m separation for confined He-4 experiments.</a> Czech. J. Phys. 46, 133-134 (1996).</li><li>Tong, Q. Y., Cha, G. H., Gafiteanu, R., Gosele, U. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> Low-Temperature Wafer Direct Bonding. J. Microelectromech. S. 3, 29-35 (1994).</li><li>Tong, Q. 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我们没有什么可透露的。

合适的硅光刻技术与直接晶圆粘接相结合，使我们能够在直径为 5 厘米的硅晶圆的整个区域内制造具有高度均匀小尺寸的真空紧闭外壳。这些外壳使我们能够研究液体 4He在其相位附近从正常液体向超流体过渡的行为。这些研究验证了对有限尺寸缩放的预测，并指出了仍有待探索的失败。这项工作还首次确定了一种非常强的耦合，这种耦合在两个液体区域之间，当被非常薄的~30纳米薄膜隔?...

当清洁硅晶片在 RT 被引入亲密接触时，它们会通过范德瓦尔斯的力量相互吸引，并形成薄弱的局部纽带。这种结合可以通过在5，6的高温下退化而变得更加牢固。粘接可以成功地完成与SiO2到Si或SiO2到SiO2的表面。硅晶圆的粘接最常用于绝缘器设备上的硅、硅基传感器和执行器以及光学设备7。这里描述的工作需要晶圆直接粘合在不同的方向，通过用它来实现明确定义的均匀间隔的外壳在整个晶圆面积8，9。具有明确的几何形状，其中可以引入流体，允许进行测量，以确定禁闭对流体特性的影响。水动力流可以研究，小尺寸可以控制从几十纳米到几微米。
SiO2 可在炉中使用湿或干热氧化工艺在 Si 晶圆上生长。然后，SiO2 可以使用石版画技术根据需要进行图案和蚀刻。在我们的工作中使用的模式包括一个广间隔的支持职位的模式，这些支持职位在平面或胶片几何中结合后产生（见 图1）。我们还对一维特性的通道和框阵列进行了成型，包括 （1μm）3 或 （2 μm）3 维1（ 见 图 2）。在设计一个盒子的禁闭，通常1000万至6000万的晶圆，需要有一种方法来填补所有的单个盒子。顶部晶圆的单独图案与设计，站在两个晶圆30纳米或以上允许这一点。或者，同样，浅通道可以在顶部晶圆上设计，以便所有框都连接在一起。顶部晶圆上生长的氧化物厚度与底部晶圆上的厚度不同。这为设计增加了另一种程度的灵活性和复杂性。能够对两个晶圆进行图案，可以实现更多的限制几何形状。
这些粘结晶圆或单元格中几何特征的大小可能有所不同。小至30纳米的平面薄膜细胞已经成功地制作了10，11。在下面的厚度下，可以发生过度粘接，使晶圆绕支撑柱弯曲，从而"密封"细胞。最近，对液体4的一系列测量，他用一个阵列（2μm）3个盒子进行了测量，它们之间的分离距离不同，为10，12。由于生长氧化物所需的时间长度增加，深度大于 2μm 的特征不太实用。然而，用厚达3.9微米9的氧化物进行了测量。横向维度小度的限制产生于光刻能力的限制。横向维度的大限由晶圆的大小决定。我们已经成功地创造了平面细胞，横向维度几乎跨越了整个晶圆直径，但人们可以同样容易地想象在宽度几十纳米的顺序上对几个较小的结构进行图案化。然而，这种结构需要电子光束光刻。我们目前没有这样做。
在我们所有的工作中，粘结晶圆形成了一个真空紧闭的外壳。这是通过在晶圆周围保留一个3-4 毫米宽度的SiO 2的固体环，见 图1来实现的。这，在粘接后，形成一个紧密的密封。如果对需要输入和输出的水动力学研究感兴趣，这种设计很容易修改。
保税细胞的爆裂压力也已得到测试。我们发现，375微米厚的晶圆可以施加高达约9个大气层的压力。然而，我们还没有研究如何通过在较大的氧化物区域或更厚的晶圆上粘合来改善这种状况。
将硅细胞与填充线接轨的程序以及在低温下测量密闭氦特性的技术在Mehta 等人中给予。2 和加斯帕里尼 等人。13我们注意到，在冷却电池14时，硅的线性维度变化仅为0.02%。对于 RT 形成的模式，这可以忽略不计。

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			<td height="20" style="height:20px;width:215px;">SmartCut</td>
			<td style="width:192px;">North American Tool</td>
			<td style="width:104px;">FL 130</td>
			<td style="width:600px;">Not much is needed per cell. Smaller sizes are available.</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Silicon Wafers</td>
			<td>Semiconductor Processing Co</td>
			<td></td>
			<td>There are many suppliers. Pay attention to thickness and thickness variation when ordering.</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Deionized Water</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Peroxide</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Hydrochloric Acid</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Ammonium Hydroxide</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Nitrogen Gas</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Helium Gas</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Diamond Paste</td>
			<td>Beuler Metadi II</td>
			<td>e.g. 406533032</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Diamond Drills</td>
			<td>Starlite</td>
			<td>e.g. 115010</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Pyrex Dishes</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Filter Paper</td>
			<td>Whatman</td>
			<td>1001-110</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Acetone</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Methanol</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Quartz tubes for flushing furnace</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Rubber vacuum hose</td>
			<td></td>
			<td></td>
			<td>General Availability</td>
		</tr>
	</tbody>
</table>

fabrication of uniform nanoscale cavities via silicon direct wafer bonding

使用石版图案和粘结硅晶片在兰姆达过渡附近进行了热容量和超流体分数的测量。与通常用于这些类型的实验的多孔材料的密闭不同，粘结晶圆为禁闭提供了预先设计统一的空间。每个单元格的几何形状是众所周知的，这消除了数据解释中模糊性的巨大来源。
特别平坦，直径5厘米，375微米厚的Si晶圆与约1μm的变化在整个晶圆可以获得商业（例如，从半导体加工公司）。热氧化物生长在晶圆上，以定义 z 方向的禁闭维度。然后使用石版印刷技术将图案蚀刻在氧化物中，以便在粘合时创建所需的外壳。在其中一个晶圆（顶部）中钻一个孔，以便测量液体的引入。晶圆在RCA溶液中清洗2 个，然后放入微清洁室，用除离子水冲洗4。晶圆在 RT 粘合，然后在 €1，100 °C 下退化。 这形成了一种牢固而永久的纽带。这个过程可用于制作统一的外壳，用于测量从纳米到微米尺度的限制性液体的热和水动力学特性。

适当的粘结晶圆将没有未绑定区域。在退赛后尝试分割晶圆会导致细胞因粘结强度而碎成碎片。正确粘合晶圆的红外图像显示在图 5 和 图 6 中。退化通常会提高细胞的均匀性，特别是如果局部未结核区域由于晶圆缺乏平整性。图 5 中，光点和边界为保税区。中心亮点是填充细胞的孔。在黑暗区域，晶圆处于 0.321 μm 分离。 图 5 中唯一未绑定区域?...

Watch this Scientific Journal Video about Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding at JoVE.com

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

描述了永久粘合两个硅晶片以实现统一外壳的方法。这包括晶圆制备、清洁、RT 粘接和退化过程。由此产生的粘结晶圆（细胞）具有外壳均匀性~1%1，2。由此产生的几何形状允许测量封闭的液体和气体。

通过硅直接晶圆粘接制造均匀纳米级腔

Measurements of the heat capacity and superfluid fraction of confined 4He have been performed near the lambda transition using lithographically patterned ...

fabrication-uniform-nanoscale-cavities-via-silicon-direct-wafer

Research

JoVE Journal

Engineering

7.0K 次观看.  The State University of New York at Buffalo. 描述了永久粘合两个硅晶片以实现统一外壳的方法。这包括晶圆制备、清洁、RT 粘接和退化过程。由此产生的粘结晶圆（细胞）具有外壳均匀性~1%1，2。由此产生的几何形状允许测量封闭的液体和气体。

视频: Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

Slow light has been one of the hot topics in the photonics community in the past decade, generating great interest both from a fundamental point of view and for its considerable potential for practical applications. Slow light photonic crystal waveguides, in particular, have played a major part and have been successfully employed for delaying optical signals1-4 and the enhancement of both linear5-7 and nonlinear devices.8-11
Photonic crystal cavities achieve similar effects to that of slow light waveguides, but over a reduced band-width. These cavities offer high Q-factor/volume ratio, for the realization of optically12 and electrically13 pumped ultra-low threshold lasers and the enhancement of nonlinear effects.14-16 Furthermore, passive filters17 and modulators18-19 have been demonstrated, exhibiting ultra-narrow line-width, high free-spectral range and record values of low energy consumption.
To attain these exciting results, a robust repeatable fabrication protocol must be developed. In this paper we take an in-depth look at our fabrication protocol which employs electron-beam lithography for the definition of photonic crystal patterns and uses wet and dry etching techniques. Our optimised fabrication recipe results in photonic crystals that do not suffer from vertical asymmetry and exhibit very good edge-wall roughness. We discuss the results of varying the etching parameters and the detrimental effects that they can have on a device, leading to a diagnostic route that can be taken to identify and eliminate similar issues.
The key to evaluating slow light waveguides is the passive characterization of transmission and group index spectra. Various methods have been reported, most notably resolving the Fabry-Perot fringes of the transmission spectrum20-21 and interferometric techniques.22-25 Here, we describe a direct, broadband measurement technique combining spectral interferometry with Fourier transform analysis.26 Our method stands out for its simplicity and power, as we can characterise a bare photonic crystal with access waveguides, without need for on-chip interference components, and the setup only consists of a Mach-Zehnder interferometer, with no need for moving parts and delay scans.
When characterising photonic crystal cavities, techniques involving internal sources21 or external waveguides directly coupled to the cavity27 impact on the performance of the cavity itself, thereby distorting the measurement. Here, we describe a novel and non-intrusive technique that makes use of a cross-polarised probe beam and is known as resonant scattering (RS), where the probe is coupled out-of plane into the cavity through an objective. The technique was first demonstrated by McCutcheon et al.28 and further developed by Galli et al.29

Use of photonic crystal slow light waveguides and cavities has been widely adopted by the photonics community in many differing applications. Therefore fabrication and characterization of these devices are of great interest. This paper outlines our fabrication technique and two optical characterization methods, namely: interferometric (waveguides) and resonant scattering (cavities).

光子晶体慢光波导和腔体的制备与表征

Slow light has been one of the hot topics in the photonics community in the past decade, generating great interest both from a fundamental point of view ...

科研

工程学

Concurrent Quantitative Conductivity and Mechanical Properties Measurements of Organic Photovoltaic Materials using AFM

Organic photovoltaic (OPV) materials are inherently inhomogeneous at the nanometer scale. Nanoscale inhomogeneity of OPV materials affects performance of photovoltaic devices. Thus, understanding of spatial variations in composition as well as electrical properties of OPV materials is of paramount importance for moving PV technology forward.1,2 In this paper, we describe a protocol for quantitative measurements of electrical and mechanical properties of OPV materials with sub-100 nm resolution. Currently, materials properties measurements performed using commercially available AFM-based techniques (PeakForce, conductive AFM) generally provide only qualitative information. The values for resistance as well as Young's modulus measured using our method on the prototypical ITO/PEDOT:PSS/P3HT:PC61BM system correspond well with literature data. The P3HT:PC61BM blend separates onto PC61BM-rich and P3HT-rich domains. Mechanical properties of PC61BM-rich and P3HT-rich domains are different, which allows for domain attribution on the surface of the film. Importantly, combining mechanical and electrical data allows for correlation of the domain structure on the surface of the film with electrical properties variation measured through the thickness of the film.

Organic photovoltaic (OPV) materials are inherently inhomogeneous at the nanometer scale. Nanoscale inhomogeneity of OPV materials affects performance of photovoltaic devices. In this paper, we describe a protocol for quantitative measurements of electrical and mechanical properties of OPV materials with sub-100 nm resolution.

并行定量的导电性和力学性能测试的有机光伏材料利用原子力显微镜

Organic photovoltaic  (OPV) materials are inherently inhomogeneous at the nanometer scale. Nanoscale  inhomogeneity of OPV materials affects performance ...

Patterning via Optical Saturable Transitions - Fabrication and Characterization

This protocol describes the fabrication and characterization of nanostructures using a novel nanolithographic technique called Patterning via Optical Saturable Transitions (POST). In this technique the chemical properties of organic photochromic molecules that undergo single-photon reactions are exploited, enabling rapid top-down nanopatterning over large areas at low light intensities, thereby, allowing for the circumvention of the far-field diffraction barrier.4 Simple, cost-effective, high throughput and resolution alternatives to nanopatterning are being explored, such as, two-photon polymerization5,6, beam pen lithography (BPL)7, scanning electron beam lithography (SEBL), and focused ion beam (FIB) patterning. However, multi-photon approaches require high light intensities, which limit their potential for high throughput and offer low image contrast. Although, electron and ion beam lithographic processes offer increased resolution, the serial nature of the process is limited to slow writing speeds, which also prevents patterning of features over large areas. Beam-pen lithography is an approach towards parallel near-field optical lithography. However, the gap between the source of the beam and the surface of the photoresist needs to be controlled extremely precisely for good pattern uniformity and this is very challenging to accomplish for large arrays of beams. Patterning via Optical Saturable Transitions (POST) is an alternative optical nanopatterning technique for patterning sub-wavelength features1-3. Since this technique uses single photons instead of electrons, it is extremely fast and does not require high light intensities1-3, opening the door to massive parallelization.

We report that the diffraction limit of conventional optical lithography can be overcome by exploiting the transitions of organic photochromic derivatives induced by their photoisomerization at low light intensities.1-3 This paper outlines our fabrication technique and two locking mechanisms, namely: dissolution of one photoisomer and electrochemical oxidation.

通过光学吸收跃迁图案 - 制备与表征

This protocol describes the fabrication and characterization of nanostructures using a novel nanolithographic technique called Patterning via Optical ...

Thermal Measurement Techniques in Analytical Microfluidic Devices

Thermal measurement techniques have been used for many applications such as thermal characterization of materials and chemical reaction detection. Micromachining techniques allow reduction of the thermal mass of fabricated structures and introduce the possibility to perform high sensitivity thermal measurements in the micro-scale and nano-scale devices. Combining thermal measurement techniques with microfluidic devices allows performing different analytical measurements with low sample consumption and reduced measurement time by integrating the miniaturized system on a single chip. The procedures of thermal measurement techniques for particle detection, material characterization, and chemical detection are introduced in this paper.

Here, we present three protocols for thermal measurements in microfluidic devices.

在分析微流体装置的热测量技术

Thermal measurement techniques have been used for many applications such as thermal characterization of materials and chemical reaction detection. ...

Prescribed 3-D Direct Writing of Suspended Micron/Sub-micron Scale Fiber Structures via a Robotic Dispensing System

A 3-axis dispensing system is utilized to control the initiating and terminating fiber positions and trajectory via the dispensing software. The polymer fiber length and orientation is defined by the spatial positioning of the dispensing system 3-axis stages. The fiber diameter is defined by the prescribed dispense time of the dispensing system valve, the feed rate (the speed at which the stage traverses from an initiating to a terminating position), the gauge diameter of the dispensing tip, the viscosity and surface tension of the polymer solution, and the programmed drawing length. The stage feed rate affects the polymer solution&#8217;s evaporation rate and capillary breakup of the filaments. The dispensing system consists of a pneumatic valve controller, a droplet-dispensing valve and a dispensing tip. Characterization of the direct write process to determine the optimum combination of factors leads to repeatedly acquiring the desired range of fiber diameters. The advantage of this robotic dispensing system is the ease of obtaining a precise range of micron/sub-micron fibers onto a desired, programmed location via automated process control. Here, the discussed self-assembled micron/sub-micron scale 3D structures have been employed to fabricate suspended structures to create micron/sub-micron fluidic devices and bioengineered scaffolds.

Here, we present a protocol to fabricate freely-suspended, micron/sub-micron scale polymer fibers and &#8220;web-like&#8221; structures generated via automated direct writing procedure by means of a 3-axis dispensing system.

暂停规定微米/亚微米尺度的纤维结构的3-D直写经全自动点胶系统

A 3-axis dispensing system is utilized to control the initiating and terminating fiber positions and trajectory via the dispensing software. The polymer ...

Solvent Bonding for Fabrication of PMMA and COP Microfluidic Devices

Thermoplastic microfluidic devices offer many advantages over those made from silicone elastomers, but bonding procedures must be developed for each thermoplastic of interest. Solvent bonding is a simple and versatile method that can be used to fabricate devices from a variety of plastics. An appropriate solvent is added between two device layers to be bonded, and heat and pressure are applied to the device to facilitate the bonding. By using an appropriate combination of solvent, plastic, heat, and pressure, the device can be sealed with a high quality bond, characterized as having high bond coverage, bond strength, optical clarity, durability over time, and low deformation or damage to microfeature geometry. We describe the procedure for bonding devices made from two popular thermoplastics, poly(methyl-methacrylate) (PMMA), and cyclo-olefin polymer (COP), as well as a variety of methods to characterize the quality of the resulting bonds, and strategies to troubleshoot low quality bonds. These methods can be used to develop new solvent bonding protocols for other plastic-solvent systems.

Solvent bonding is a simple and versatile method for fabricating thermoplastic microfluidic devices with high quality bonds. We describe a protocol to achieve strong, optically clear bonds in PMMA and COP microfluidic devices that preserve microfeature details, by a judicious combination of pressure, temperature, an appropriate solvent, and device geometry.

溶剂粘接的PMMA的制备和COP微流体装置

Thermoplastic microfluidic devices offer many advantages over those made from silicone elastomers, but bonding procedures must be developed for each ...

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Electrically assisted deformation (EAD) is increasingly being used to improve the formability of metals during processes such as sheet metal rolling and forging. Adoption of this technique is proceeding despite disagreement concerning the underlying mechanism responsible for EAD. The experimental procedure described herein enables a more explicit study compared to previous EAD research by removing thermal effects, which are responsible for disagreement in interpreting previous EAD results. Furthermore, as the procedure described here enables EAD observation in situ and in real time in a transmission electron microscope (TEM), it is superior to existing post-mortem methods that observe EAD effects post-test. Test samples consist of a single crystal copper (SCC) foil having a free-standing tensile test section of nanoscale thickness, fabricated using a combination of laser and ion beam milling. The SCC is mounted to an etched silicon base that provides mechanical support and electrical isolation while serving as a heat sink. Using this geometry, even at high current density (~3,500 A/mm2), the test section experiences a negligible temperature increase (&#60;0.02 &#176;C), thus eliminating Joule heating effects. Monitoring material deformation and identifying the corresponding changes to microstructures, e.g. dislocations, are accomplished by acquiring and analyzing a series of TEM images. Our sample preparation and in situ experiment procedures are robust and versatile as they can be readily utilized to test materials with different microstructures, e.g., single and polycrystalline copper.

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Isolating electrical and thermal effects on electrically assisted deformation (EAD) is very difficult using macroscopic samples. Metallic sample micro- and nanostructures together with a custom test procedure have been developed to evaluate the impact of applied current on the formation without joule heating and evolution of dislocations on these samples.

一种新的方法<em&gt;原位</em&gt;纳米级样品的机电表征

Electrically assisted deformation (EAD) is increasingly being used to improve the formability of metals during processes such as sheet metal rolling and ...

Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques

Electron and x-ray magnetic microscopies allow for high-resolution magnetic imaging down to tens of nanometers. However, the samples need to be prepared on transparent membranes which are very fragile and difficult to manipulate. We present processes for the fabrication of samples with magnetic micro- and nanostructures with spin configurations forming magnetic vortices suitable for Lorentz transmission electron microscopy and magnetic transmission x-ray microscopy studies. The samples are prepared on silicon nitride membranes and the fabrication consists of a spin coating, UV and electron-beam lithography, the chemical development of the resist, and the evaporation of the magnetic material followed by a lift-off process forming the final magnetic structures. The samples for the Lorentz transmission electron microscopy consist of magnetic nanodiscs prepared in a single lithography step. The samples for the magnetic x-ray transmission microscopy are used for time-resolved magnetization dynamic experiments, and magnetic nanodiscs are placed on a waveguide which is used for the generation of repeatable magnetic field pulses by passing an electric current through the waveguide. The waveguide is created in an extra lithography step.

A protocol for the fabrication of magnetic micro- and nanostructures with spin configurations forming magnetic vortices suitable for transmission electron microscopy (TEM) and magnetic transmission x-ray microscopy (MTXM) studies is presented.

用透射显微技术制备氮化硅薄膜磁性纳米结构的研究

Electron and x-ray magnetic microscopies allow for high-resolution magnetic imaging down to tens of nanometers. However, the samples need to be prepared ...

Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding

The assembly of two-dimensional (2D) graphene into three-dimensional (3D) polyhedral structures while preserving the graphene's excellent inherent properties has been of great interest for the development of novel device applications. Here, fabrication of 3D, microscale, hollow polyhedrons (cubes) consisting of a few layers of 2D graphene or graphene oxide sheets via an origami-like self-folding process is described. This method involves the use of polymer frames and hinges, and aluminum oxide/chromium protection layers that reduce tensile, spatial, and surface tension stresses on the graphene-based membranes when the 2D nets are transformed into 3D cubes. The process offers control of the size and shape of the structures as well as parallel production. In addition, this approach allows the creation of surface modifications by metal patterning on each face of the 3D cubes. Raman spectroscopy studies show the method allows the preservation of the intrinsic properties of the graphene-based membranes, demonstrating the robustness of our method.

Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding

Here, we present a protocol for fabrication of 3D graphene-based polyhedrons via origami-like self-folding.

基于折纸式自折叠的三维石墨烯正多面体的制备

The assembly of two-dimensional (2D) graphene into three-dimensional (3D) polyhedral structures while preserving the graphene's excellent inherent ...

Fabrication of Robust Nanoscale Contact between a Silver Nanowire Electrode and CdS Buffer Layer in Cu(In,Ga)Se2 Thin-film Solar Cells

Silver nanowire transparent electrodes have been employed as window layers for Cu(In,Ga)Se2 thin-film solar cells. Bare silver nanowire electrodes normally result in very poor cell performance. Embedding or sandwiching silver nanowires using moderately conductive transparent materials, such as indium tin oxide or zinc oxide, can improve cell performance. However, the solution-processed matrix layers can cause a significant number of interfacial defects between transparent electrodes and the CdS buffer, which can eventually result in low cell performance. This manuscript describes how to fabricate robust electrical contact between a silver nanowire electrode and the underlying CdS buffer layer in a Cu(In,Ga)Se2 solar cell, enabling high cell performance using matrix-free silver nanowire transparent electrodes. The matrix-free silver nanowire electrode fabricated by our method proves that the charge-carrier collection capability of silver nanowire electrode-based cells is as good as that of standard cells with sputtered ZnO:Al/i-ZnO as long as the silver nanowires and CdS have high-quality electrical contact. The high-quality electrical contact was achieved by depositing an additional CdS layer as thin as 10 nm onto the silver nanowire surface.

Fabrication of Robust Nanoscale Contact between a Silver Nanowire Electrode and CdS Buffer Layer in CuIn,GaSe2 Thin-film Solar Cells

In this protocol, we describe the detailed experimental procedure for the fabrication of a robust nanoscale contact between a silver nanowire network and CdS buffer layer in a CIGS thin-film solar cell.