这项工作是由美国国家科学基金会批准号DMR-1207243，美国国家科学基金会MRSEC程序支持（DMR-0820414），美国能源部批准号:DE-FG02-03ER46054，以及俄勒冈州立大学，金属材料研究所。作者承认了纳米技术实验室在俄亥俄州立大学，以及CY花王和CY陈技术援助。

1.合成和前体的制备<ol><li> [的Et 4 N]的制备[V（CO）6] 23 <ol><li>在氮气手套箱中，切1.88克金属钠到〜40片，并与14.84克蒽的1升三颈圆底烧瓶中混合320毫升无水四氢呋喃（THF）。 注意:这两种金属钠和四​​氢呋喃是高度易燃的。 </li><li>在RT搅拌在氮气氛下的溶液4.5小时，直到NAC 14 H 10被形成深蓝色溶液。 </li><li>冷却该溶液至0℃。 </li><li>在氮气手套箱中，通过加入400毫升无水THF中制备的VCL 3（THF）3的粉红色溶液变成7.48克的VCl 3（THF）3的在500毫升圆底烧瓶中，并在RT搅拌1小时。 </li><li>除去从手套箱的粉红色溶液的VCl 3（THF）3，并冷却至0℃，20分钟。转移到前SOLU经氮气气氛下插管NAC 14 H 10的重刑。均相深紫色溶液立即形成在加入完成之后。 </li><li>从氮中除去，并搅拌15小时。缓慢升温至RT放置在瓶冰桶让冰融化O / N。 </li><li>再次冷却该溶液至0℃，并填充反应烧瓶用一氧化碳。该解决方案将来自深紫变为黄褐色在几分钟之内。 警告:一氧化碳是剧毒。此步骤不应单独进行，一个一氧化碳警报应安装在实验室。 </li><li>搅拌一氧化碳气氛下将溶液在0℃下15小时，然后缓慢温热至室温。 </li><li>除去THF的所有但200毫升真空下。加入500毫升邻2自由水，同时搅拌溶液。 V（CO）6容易被氧化和O 2的存在将导致低收率。 </li><li>过滤所得黄色浆液成的20.8克溴化四乙基铵组成的溶液在200毫升H 2 O（乙醚4 NBR） </li><li>洗涤滤饼用O 2自由水，直到它是无色的。 </li><li>过滤所得[的Et 4 N] [V（CO）6]通过真空过滤的浆液并在真空下干燥。 </li><li>店[的Et 4 N] [V（CO）6]在手套箱冷冻以供将来使用。 </li></ol></li><li> Ⅴ的制备（CO）6 23 <ol><li>油脂的连接点的真空适配器活塞，玻璃双向连接管和冷的手指。放置冷手指在中心颈和一真空接头与活塞中的第三开口。 </li><li>在氩气手套箱中，混合100毫克〔的Et 4 N] [V（CO）6]用1克磷酸中包含磁力搅拌棒的圆底烧瓶中。 </li><li>通过玻璃双向连接桶圆底烧瓶连接到一个三颈圆底烧瓶E在氩气手套箱。 </li><li>从手套箱中取出密封烧瓶制度，建立化学罩。 </li><li>加甲醇至冷手指和搅拌用刮刀-同时加入液氮中直至甲醇被冻结。通过打开旋塞到真空管线，直至压力达到5×10 -2乇抽真空系统。 </li><li>淹没在油浴套的圆底烧瓶至45℃，并开启磁力搅拌。一旦反应开始，所述磷酸会熔化和一个黑蓝色粉末凝结在冷手指。 </li><li>打开真空管线时黑色粉末凝结在圆底烧瓶代替的冷指由于压力过高。收盘前再次泵系统恢复到5×10 -2托。 </li><li>旋转根据需要将反应烧瓶以混合所有的反应物。 </li><li>使反应继续进行，直到在圆底烧瓶中剩余的残余物是白灰色，并且不再冒泡。</li><li>覆铜球团成一个寒冷的安全容器中，冷却用液氮。 </li><li>从指形冷却件用微量除去甲醇。倒入冰镇铜丸进入冷手指转移到手套箱过程中保持低温。 </li><li>转移到氩手套箱前擦净油和凝结水关烧瓶系统。 </li><li>里面的手套箱，取出冷手指从烧瓶系统和用刮刀刮去黑色V（CO）6粉末到一张称重纸上的。 </li><li>商店V（CO）6在氩气氛下一个瓶，并保持低于室温。 </li></ol></li><li> TCNE通过升华纯化<ol><li>购买市售四氰基（TCNE），并储存在冰箱中的化学。 </li><li>拌〜5克TCNE用约0.5克活性炭和研磨带研钵和杵。 </li><li>将TCNE /碳混合物到玻璃船或包裹在微妙的任务湿巾放在底部的烧瓶与真空线。 </li><li>放置冷手指到烧瓶的顶部，并与夹紧密封两个部分组合在一起。 </li><li>加甲醇至冷手指和搅拌用刮刀-同时加入液氮中直至甲醇被冻结。把这个包含TCNE在油浴中加热至70℃的烧瓶的底部。 </li><li>打开真空管线达到10 -4托的压力，然后关闭真空线。 </li><li>偶尔打开真空管线以保持压力。 TCNE凝结在冰冷的手指升华开始。一旦没有更多的TCNE积聚在冷手指升华结束。 </li><li>从指形冷却件用微量除去甲醇。 </li><li>转移到氩手套箱前擦净油和凝结水关烧瓶系统。 </li><li>里面的手套箱，除去寒手指从瓶中系统用刮刀刮去TCNE粉到一张纸重的。 </li><li>申通快递重新纯化TCNE在惰性气氛下低于室温冰箱。 </li></ol></li></ol> 2.设置沉积系统内部的氩气手套箱<ol><li>装配该反应器在氩气手套箱内， 如图1A所示 。 <ol><li>设置到真空泵的连接。 </li><li>由流量计和两行连接到微米阀之间连接一个3路活塞设置气体流的连接。 </li><li>滑动反应器（A部分， 图1B）周围的玻璃加热线圈。 </li><li>包裹有聚四氟乙烯（PTFE）密封条载玻片。 </li><li>从右侧的反应器中，部分A的推载玻片约10cm </li><li>放置在B部分的O型圈和滑入右侧的反应堆。用卡子连接的两片在一起。 </li><li>附加真空管线对A部分的底部连接和压力表连接到顶部连接。 </li><li>放置填充船ED与纯化TCNE到C部分近端，使得TCNE将在反应器的最热的部分坐。 </li><li>脂部分C的连接，并将它推入反应器的左侧。 </li><li>油脂T型船装满V（CO）6和幻灯片的两边成部分B的右端</li><li>每个连接阀微米。一应连接到右侧的T形船及其它到部分C的左侧和在地方夹紧两者。 </li><li>运行测试沉积，以确定该反应区的位置。 </li></ol></li><li>存款V [TCNE]×〜2基板上<ol><li>设置反应加热线圈的温度，从而当在反应器的底部和TCNE船的面积测得接近75℃的反应区设置为一个值接近46℃。设置一个硅油浴的温度升高到10℃。允许温度为至少30分钟稳定。 </li><li>滑动玻璃加热器COI升反应器（A部分， 图1A）左右。 </li><li>包裹有聚四氟乙烯（PTFE）密封条载玻片。安排在覆盖的滑动的顶部的样品的两英寸的空间内。 </li><li>推载玻片到反应器中，以便将样品位于反应区中。交替样品可直接放置在反应器的底部，虽然反应区可在没有一个载玻片被移位。 </li><li>放置在B部分的O型圈和滑入右侧的反应堆。用卡子连接的两片在一起。 </li><li>附加真空管线对A部分的底部连接和压力表连接到顶部连接。 </li><li>把50毫克TCNE入TCNE船和5毫克V（CO）6到T-舟（这些量是适合的75-90分钟的沉积）。 </li><li>该艇TCNE滑入C部分接近尾声，使得TCNE将在应约75℃，反应器的最热的部分坐。 </li><li<html> &gt;黄油C部分的连接，并将其滑入反应器的左侧。 </li><li>油脂T型船和幻灯片两侧成部分B的右端</li><li>流动线滑到右侧的T-船和C部分的左侧边和夹紧到位。组装的建立应该类似于图1A。 </li><li>提高的油浴以覆盖T型船的整个底部。 </li><li>打开真空管线达到30-35毫米汞柱的压力。 </li><li>对于V（CO）6和84标准立方厘米为TCNE设置流速至56标准立方厘米。反应应在反应区的壁中的绿色材料冷凝立即开始。 </li><li>允许反应进行所需的时间长度。该薄膜的厚度是根据反应器内的反应时间和位置， 如图2所示。 </li><li>以停止反应，靠近真空线和关闭加热器和油浴中。 </li></ol></li></ol>ove_title"&gt; 3。清理<ol><li>拆开该系统中的任何命令。 </li><li>浸泡所有的玻璃器皿中，除了至少1-2个小时的基础灌流液加热线圈。 </li><li>冲洗玻璃器皿与水和干的炉中。 </li></ol><img alt="图1" src="/files/ftp_upload/52891/52891fig1.jpg" /> 图1（A）完全组装定制化学气相沉积（CVD）系统。 （ 二）成分的CVD系统的扩展视图。 <a href="https://www.jove.com/files/ftp_upload/52891/52891fig1large.jpg" target="_blank">请点击此处查看该图的放大版本。</a> <img alt="图2" src="/files/ftp_upload/52891/52891fig2.jpg" /> 图2.（A）的反应器中的示出其位置的基板的顶视图。 （B）近似薄膜厚度的反应管，部分是由图1B为75分钟的沉积内侧的位置功能。 <a href="https://www.jove.com/files/ftp_upload/52891/52891fig2large.jpg" target="_blank">请点击此处查看该图的放大版本。</a>

<ol>
	<li>Yoo, J. W., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Spin+injection/detection+using+an+organic-based+magnetic+semiconductor.">Spin injection/detection using an organic-based magnetic semiconductor.</a> Nat. Mater. 9, 638-642 (2010).</li><li>Li, B., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Room-temperature+organic-based+spin+polarizer.">Room-temperature organic-based spin polarizer.</a> Appl. Phys. Lett. 99, 153503 (2011).</li><li>Li, B., Kao, C. Y., Yoo, J. W., Prigodin, V. N., Epstein, A. J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Magnetoresistance+in+an+All-Organic-Based+Spin+Valve.">Magnetoresistance in an All-Organic-Based Spin Valve.</a> Adv. Mater. 23, 3382-3386 (2011).</li><li>Fang, L., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Electrical+Spin+Injection+from+an+Organic-Based+Ferrimagnet+in+a+Hybrid+Organic-Inorganic+Heterostructure.">Electrical Spin Injection from an Organic-Based Ferrimagnet in a Hybrid Organic-Inorganic Heterostructure.</a> Phys. Rev. Lett. 106, 156602 (2011).</li><li>Yu, H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Ultra-narrow+ferromagnetic+resonance+in+organic-based+thin+films+grown+via+low+temperature+chemical+vapor+deposition.">Ultra-narrow ferromagnetic resonance in organic-based thin films grown via low temperature chemical vapor deposition.</a> Appl. Phys. Lett. 105, 012407 (2014).</li><li>Manriquez, J. M., Yee, G. T., McLean, R. S., Epstein, A. J., Miller, J. S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=A+Room-Temperature+Molecular+Organic+Based+Magnet.">A Room-Temperature Molecular Organic Based Magnet.</a> Science. 252, 1415-1417 (1991).</li><li>Pokhodnya, K. I., Epstein, A. J., Miller, J. S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> Thin-film V TCNE (x) magnets. Adv. Mater. 12, 410-413 (2000).</li><li>Carlegrim, E., Kanciurzewska, A., Nordblad, P., Fahlman, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Air-stable+organic-based+semiconducting+room+temperature+thin+film+magnet+for+spintronics+applications.">Air-stable organic-based semiconducting room temperature thin film magnet for spintronics applications.</a> Appl. Phys. Lett. 92, 163308 (2008).</li><li>Kao, C. Y., Yoo, J. W., Min, Y., Epstein, A. J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Molecular+Layer+Deposition+of+an+Organic-Based+Magnetic+Semiconducting+Laminate.">Molecular Layer Deposition of an Organic-Based Magnetic Semiconducting Laminate.</a> ACS Appl. Mater. Interfaces. 4, 137-141 (2012).</li><li>Miller, J. S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Oliver+Kahn+Lecture:+Composition+and+structure+of+the+V+TCNE+(x)+(TCNE+=+tetracyanoethylene)+room-temperature,+organic-based+magnet+-+A+personal+perspective.">Oliver Kahn Lecture: Composition and structure of the V TCNE (x) (TCNE = tetracyanoethylene) room-temperature, organic-based magnet - A personal perspective.</a> Polyhedron. 28, 1596-1605 (2009).</li><li>Haskel, D., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Local+structural+order+in+the+disordered+vanadium+tetracyanoethylene+room-temperature+molecule-based+magnet.">Local structural order in the disordered vanadium tetracyanoethylene room-temperature molecule-based magnet.</a> Phys. Rev. B. 70, 054422 (2004).</li><li>Prigodin, V. N., Raju, N. P., Pokhodnya, K. I., Miller, J. S., Epstein, A. J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Spin-Driven+Resistance+in+Organic-Based+Magnetic+Semiconductor+V[TCNE]x.">Spin-Driven Resistance in Organic-Based Magnetic Semiconductor V[TCNE]x.</a> Adv. Mater. 14, 1230-1233 (2002).</li><li>Yoo, J. W., Edelstein, R. S., Lincoln, D. M., Raju, N. P., Epstein, A. J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Photoinduced+magnetism+and+random+magnetic+anisotropy+in+organic-based+magnetic+semiconductor+V(TCNE)(x)+films,+for+x+similar+to+2.">Photoinduced magnetism and random magnetic anisotropy in organic-based magnetic semiconductor V(TCNE)(x) films, for x similar to 2.</a> Phys. Rev. Lett. 99 (15), 157205 (2007).</li><li>Cimpoesu, F., Frecus, B., Oprea, C. I., Panait, P., G&#238;r&#355;u, M. A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Disorder,+exchange+and+magnetic+anisotropy+in+the+room-temperature+molecular+magnet+V[TCNE]x+&#8211;+A+theoretical+study.">Disorder, exchange and magnetic anisotropy in the room-temperature molecular magnet V[TCNE]x &#8211; A theoretical study.</a> Computational Materials Science. 91, 320-328 (2014).</li><li>Raju, N. P., Prigodin, V. N., Pokhodnya, K. I., Miller, J. S., Epstein, A. J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High+field+linear+magnetoresistance+in+fully+spin-polarized+high-temperature+organic-based+ferrimagnetic+semiconductor+V(TCNE)(x)+films,+x+similar+to+2.">High field linear magnetoresistance in fully spin-polarized high-temperature organic-based ferrimagnetic semiconductor V(TCNE)(x) films, x similar to 2.</a> Synth. Met. 160, 307-310 (2010).</li><li>Raju, N. P., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Anomalous+magnetoresistance+in+high-temperature+organic-based+magnetic+semiconducting+V(TCNE)(x)+films.">Anomalous magnetoresistance in high-temperature organic-based magnetic semiconducting V(TCNE)(x) films.</a> J. Appl. Phys. 93, 6799-6801 (2003).</li><li>Yoo, J. W., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Multiple+photonic+responses+in+films+of+organic-based+magnetic+semiconductor+V(TCNE)(x),+x+similar+to+2.">Multiple photonic responses in films of organic-based magnetic semiconductor V(TCNE)(x), x similar to 2.</a> Phys. Rev. Lett. 97, 247205 (2006).</li><li>Yoo, J. W., Edelstein, R. S., Raju, N. P., Lincoln, D. M., Epstein, A. J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Novel+mechanism+of+photoinduced+magnetism+in+organic-based+magnetic+semiconductor+V(TCNE)(x),+x+similar+to+2.">Novel mechanism of photoinduced magnetism in organic-based magnetic semiconductor V(TCNE)(x), x similar to 2.</a> J. Appl. Phys. 103, 07B912 (2008).</li><li>Caro, D., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=CVD-grown+thin+films+of+molecule-based+magnets.">CVD-grown thin films of molecule-based magnets.</a> Chem. Mat. 12, 587-589 (2000).</li><li>Erickson, P. K., Miller, J. S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Thin+film+Co+TCNE+(2)+and+VyCo1-y+TCNE+(2)+magnetic+materials.">Thin film Co TCNE (2) and VyCo1-y TCNE (2) magnetic materials.</a> J. Magn. Magn. Mater. 324 (2), 2218-2223 (2012).</li><li>Valade, L., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Thin+films+of+molecular+materials+grown+on+silicon+substrates+by+chemical+vapor+deposition+and+electrodeposition.">Thin films of molecular materials grown on silicon substrates by chemical vapor deposition and electrodeposition.</a> J. Low Temp. Phys. 142, 393-396 (2006).</li><li>Casellas, H., de Caro, D., Valade, L., Cassoux, P. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=A+new+chromium-based+molecular+magnet+grown+as+a+thin+film+by+CVD.">A new chromium-based molecular magnet grown as a thin film by CVD.</a> Chem. Vapor Depos. 8, 145-147 (2002).</li><li>Barybin, M. V., Pomije, M. K., Ellis, J. E. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Highly+reduced+organometallics+-+42.+A+new+method+for+the+syntheses+of+V(CO)(6)+(-)+and+V(PF3)(6)+(-)+involving+anthracenide+mediated+reductions+of+VCl3(THF)(3).">Highly reduced organometallics - 42. A new method for the syntheses of V(CO)(6) (-) and V(PF3)(6) (-) involving anthracenide mediated reductions of VCl3(THF)(3).</a> Inorg. Chim. Acta. 269, 58-62 (1998).</li><li>Froning, I. H. M., Lu, Y., Epstein, A. J., Johnston-Halperin, E. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Thin-film+Encapsulation+of+the+Air-Sensitive+Organic+Ferrimagnet+Vanadium+Tetracyanoethylene.">Thin-film Encapsulation of the Air-Sensitive Organic Ferrimagnet Vanadium Tetracyanoethylene.</a> Appl. Phys. Lett. 106, 122403 (2015).</li><li>Pokhodnya, K. I., Bonner, M., Miller, J. S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Parylene+protection+coatings+for+thin+film+V+TCNE+(x)+room+temperature+magnets.">Parylene protection coatings for thin film V TCNE (x) room temperature magnets.</a> Chem. Mat. 16, 5114-5119 (2004).</li><li>Shima Edelstein, R., Yoo, J. -. W., Raju, N. P., Bergeson, J. D., Pokhodnya, K. I., Miller, J. S., Epstein, A. J., Tessler, N., Arias, A. C., Burgi, L., Emerson, J. A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> Materials Research Society. , (2005).</li><li>Katz, H. E. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Recent+advances+in+semiconductor+performance+and+printing+processes+for+organic+transistor-based+electronics).">Recent advances in semiconductor performance and printing processes for organic transistor-based electronics).</a> Chem. Mat. 16, 4748-4756 (2004).</li><li>Subbarao, S. P., Bahlke, M. E., Kymissis, I. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Laboratory+Thin-Film+Encapsulation+of+Air-Sensitive+Organic+Semiconductor+Devices.">Laboratory Thin-Film Encapsulation of Air-Sensitive Organic Semiconductor Devices.</a> IEEE Trans. Electron Devices. 57, 153-156 (2010).</li><li>Lungenschmied, C., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Flexible,+long-lived,+large-area,+organic+solar+cells.">Flexible, long-lived, large-area, organic solar cells.</a> Solar Energy Materials and Solar Cells. 91, 379-384 (2007).</li><li>Lu, Y., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Thin-Film+Deposition+of+an+Organic+Magnet+Based+on+Vanadium+Methyl+Tricyanoethylenecarboxylate.">Thin-Film Deposition of an Organic Magnet Based on Vanadium Methyl Tricyanoethylenecarboxylate.</a> Adv. Mater. 26, 7632-7636 (2014).</li></ol>

作者什么都没有透露。

关键参数中V [TCNE]×〜2沉积包括温度，载气流量，压力，和前体的比例。因为化学气相沉积设置不是市售这些参数将需要为每一个系统进行优化。先前的研究由麻等人透露，温度对TCNE前体26的升华速率的影响最大。温度可通过在温度控制器和还通过调整在加热线圈和作为这样的丝间距将需要校准每个系统中设置的值进行修改两者。温度的校准是通过测量反应器内之前?...

有机基铁氧体磁性半导体钒四氰（Ⅴ[TCNE]，则x〜2）表现出室温磁有序和承诺的磁电子应用，如柔软性，低成本的生产，和化学可调谐性的有机材料的优点。以前的研究已经证明，在自旋电子器件，包括杂化有机/无机1,2-和全有机自旋阀3的功能，和作为活性有机/无机半导体异质结构4自旋偏振器。此外，V [TCNE]×〜2展示了承诺列入高频电子产品，由于其极窄的铁磁共振行距5。 有已建立的合成V [TCNE]×〜2月 6日至九日四种不同的方法。 V [TCNE]×〜2首次合成powde经由TCNE和V的反应中的R二氯甲烷（C 6 H 6）6。这些粉末表现出在有机系材料中观察到的第一个室温磁有序。然而，这种材料的粉末形式是极其空气敏感，限制了其在薄膜器件的应用。在2000年，化学气相沉积（CVD）方法建立用于创建V [TCNE]×〜2薄膜7。更多最近的物理气相沉积（PVD）8和分子层沉积（MLD）9也已用于制造薄膜。 PVD法需要超高真空（UHV）系统和两者PVD和MLD方法需要极长的时间来生长膜厚度大于100纳米，而在CVD膜可以很容易地在厚度范围从30纳米到几微米沉积。除了各种可用与CVD法厚度，广泛的研究已经取得了优化的薄膜即一直显示高Quality磁特性包括:窄铁磁共振（FMR）线宽（1.5克），高的居里温度（600 K）和尖锐的磁开关5。 以V [TCNE]×〜2薄膜磁有序通过非常规途径进行。 SQUID磁力测量显示强大的本地磁有序，但由于没有X射线衍射峰和特征的透射型电子显微镜（TEM）10形态揭示缺乏长程结构秩序。然而，扩展X射线吸收精细结构（EXAFS）研究11表明每个钒离子八面体配位与六个不同TCNE分子，表明与2.084（5）埃的钒-氮键长度的稳定的局部结构秩序。磁性源于TCNE的未配对自旋之间的反铁磁性交换耦合-基阴离子，它们分布在整个TCNE -分子，并且在V 2+离子的自旋，导致本地铁磁有序与T C 〜600 K中优化膜5。除了 ​​表现出室温磁有序，V [TCNE]×〜2薄膜半导体为0.5 EV带隙12。值得注意的其他性能包括低于〜150开13,14，反常正磁阻12,15,16，和光诱导磁13,17,18的冷冻温度可能sperimagnetism。 CVD法合成V [TCNE]×〜2薄膜与各种基质的相容因低温（&lt;60℃）和保形沉积。以前的研究显示了V [TCNE]×〜2成功沉积在刚性和柔性基板7。此外，该沉积技术适合于调谐通过前体和改性克owth参数19-22虽然此处所示的协议产生最优化的膜迄今为止，显著进展已取得，因为这种方法的发现改善的一些膜的性质和进一步的增益是可能的。

<table><tbody><tr><td colspan="4">&lt;strong&gt;Equipment&lt;/strong&gt;</td></tr><tr><td>Nitrogen Glovebox</td><td>Vacuum Atmospheres</td><td>Omni</td><td>steps done in nitrogen glovebox can also be done in an argon glovebox</td></tr><tr><td>1 L three-neck round bottom flask</td><td>Corning</td><td>4965A-1L</td><td></td></tr><tr><td>500 ml round bottom flask</td><td>Sigma Aldrich</td><td>64678</td><td></td></tr><tr><td>Turbo vacuum pumping station</td><td>Agilent Varian</td><td>G8701A-011-037</td><td></td></tr><tr><td>Glass Stopcock</td><td>Kontes</td><td>185000-2440</td><td></td></tr><tr><td>Glass two way connecting tube</td><td>Corning</td><td>8940-24</td><td>Corning Pyrex(R) 105 degree Angled Tube Adapter with Two-Way 24/40 Standard Taper Joint</td></tr><tr><td>Coldfinger</td><td></td><td></td><td>Custom part made by OSU chemistry glass shop</td></tr><tr><td>Argon Glovebox</td><td>Vacuum Atmospheres</td><td>Nexus I</td><td></td></tr><tr><td>Hot plate stirrer</td><td>Corning</td><td>6795</td><td></td></tr><tr><td>Thermoeletric cooler</td><td>Advanced Thermoelectric</td><td>TCP-50</td><td></td></tr><tr><td>Temperature controller</td><td>Advanced Thermoelectric</td><td>TLZ10</td><td>for TE cooler</td></tr><tr><td>Power supply</td><td>Advanced Thermoelectric</td><td>PS-145W-12V&amp;nbsp;</td><td>for TE cooler and temperature controller</td></tr><tr><td>Temperature controller</td><td>J-Kem&amp;nbsp; Scientific</td><td>Model 150</td><td>For heating coil</td></tr><tr><td>Heating wire</td><td>Pelican Wire Company</td><td>Nichrome 60</td><td></td></tr><tr><td>Custom glassware pieces</td><td></td><td></td><td>Made by OSU Chemistry glass shop</td></tr><tr><td>Vacuum pump</td><td>BOC Edwards</td><td>XDS-5</td><td>Connected to the CVD set-up</td></tr><tr><td>Flow meter</td><td>Gilmont</td><td>GF-2260</td><td></td></tr><tr><td>Micrometer valve</td><td>Gilmont</td><td>7300</td><td>Controls flow of argon over TCNE</td></tr><tr><td>Micrometer valve</td><td>Gilmont</td><td>7100</td><td>Controls flow of argon over&amp;nbsp; V(CO)&lt;sub&gt;6&lt;/sub&gt;</td></tr><tr><td>Tubing</td><td>Tygon</td><td>R3603</td><td>1/8 in walls, connected between valves and meter</td></tr><tr><td>3-way Stopcock</td><td>Nalgene</td><td>6470</td><td>used to adjust the flow rates</td></tr><tr><td>Pressure gauge</td><td>Matheson</td><td>63-4105</td><td>connects to the top of &lt;strong&gt;Figure 1&lt;/strong&gt; part A</td></tr><tr><td>SQUID magnetometer</td><td>Quantum Design</td><td>MPMS-XL</td><td></td></tr><tr><td>EPR</td><td>Bruker</td><td>Elexsys</td><td></td></tr><tr><td>PPMS</td><td>Quantum Design</td><td>14T PPMS</td><td></td></tr><tr><td>Sourcemeter</td><td>Keithely&amp;nbsp;</td><td>2400</td><td></td></tr><tr><td colspan="4">&lt;strong&gt;Materials&lt;/strong&gt;</td></tr><tr><td>Sodium metal</td><td>Sigma Aldrich</td><td>262714</td><td></td></tr><tr><td>Anthracene</td><td>Sigma Aldrich</td><td>141062</td><td></td></tr><tr><td>Anhydrous tetrahydrofuran</td><td>Sigma Aldrich</td><td>186562</td><td></td></tr><tr><td>Vanadium(III) chloride tetrahydrofuran complex</td><td>Sigma Aldrich</td><td>395382</td><td></td></tr><tr><td>Carbon monoxide gas</td><td>OSU stores</td><td>98610</td><td></td></tr><tr><td>Tetraethylammonium bromide</td><td>Sigma Aldrich</td><td>241059</td><td></td></tr><tr><td>Phosphoric acid</td><td>Sigma Aldrich</td><td>79622</td><td></td></tr><tr><td>Methanol</td><td>Sigma Aldrich</td><td>14262</td><td></td></tr><tr><td>Silcone oil</td><td>Sigma Aldrich</td><td>146153</td><td></td></tr><tr><td>Copper pellets</td><td></td><td></td><td>Cut from spare copper wire</td></tr><tr><td>Tetracyanoethylene</td><td>Sigma Aldrich</td><td>T8809</td><td></td></tr><tr><td>Glass slides</td><td>Gold Seal</td><td>3010</td><td></td></tr><tr><td>Activated Charcoal</td><td>Sigma Aldrich</td><td>242276</td><td></td></tr></tbody></table>

chemical vapor deposition of an organic magnet, vanadium tetracyanoethylene

在有机材料领域中的最新进展已经产生了器件如有机发光二极管（OLED），其具有传统的材料，包括低成本和机械柔韧性没有发现的优点。与此类似，这将是有利的，以扩大利用有机物成高频电子器件和基于自旋的电子器件。这项工作提出的合成方法，薄膜的室温有机亚铁磁的生长，钒四氰（Ⅴ[TCNE]，则x〜2）通过低温化学气相沉积（CVD）。薄膜生长在&lt;60℃下，可容纳各种基材，包括但不限于，硅，玻璃，聚四氟乙烯和柔性基板。的保形沉积，有利于预图案化和三维结构为好。另外，该技术可以得到具有厚度范围从30纳米到几微米的薄膜。最新进展在膜生长的优化产生的膜的品质，如更高的居里温度（600 K），改进的磁性均匀性和窄铁磁谐振线路宽度为各种在自旋电子学和微波电子应用（1.5 g）示出的承诺。

第一和最容易的方法，用于确定一个沉积是成功的是做膜的目视检查。这部电影应该会出现暗紫色采用了镜面设计是整个基板均匀。如果在衬底的表面上的斑点，其中有否v [TCNE]×〜2，或者它是在颜色较浅，则这可能是由于溶剂或其它杂质的衬底表面上的存在。此外，该电影应该是不透明的。除非薄膜沉积在只有几分钟的短时间内，半透明膜往往意味着有可能已被与前体的沉积期间...

Watch this Scientific Journal Video about Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene at JoVE.com

Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene

我们提出的基于有机物的亚铁磁钒四氰的合成（Ⅴ[TCNE]，则x〜2）通过低温化学气相沉积（CVD）。这种优化配方产生增加居里温度从400 K至600 K和磁共振性能的显着改善。

化学气相沉积的有机磁体，钒四氰

Recent progress in the field of organic materials has yielded devices such as organic light emitting diodes (OLEDs) which have advantages not found in ...

chemical-vapor-deposition-an-organic-magnet-vanadium

Research

JoVE Journal

Chemistry

11.4K 次观看.  The Ohio State University. 我们提出的基于有机物的亚铁磁钒四氰的合成（Ⅴ[TCNE]，则x〜2）通过低温化学气相沉积（CVD）。这种优化配方产生增加居里温度从400 K至600 K和磁共振性能的显着改善。 

视频: Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene

Fabrication of VB2/Air Cells for Electrochemical Testing

A technique to investigate the properties and performance of new multi-electron metal/air battery systems is proposed and presented. A method for synthesizing nanoscopic VB2 is presented as well as step-by-step procedure for applying a zirconium oxide coating to the VB2 particles for stabilization upon discharge. The process for disassembling existing zinc/air cells is shown, in addition construction of the new working electrode to replace the conventional zinc/air cell anode with a the nanoscopic VB2 anode. Finally, discharge of the completed VB2/air battery is reported. We show that using the zinc/air cell as a test bed is useful to provide a consistent configuration to study the performance of the high-energy high capacity nanoscopic VB2 anode.

Fabrication of VB2/Air Cells for Electrochemical Testing

A protocol is presented to study multi-electron metal/air battery systems by using previous technology developed for the zinc/air cell. Electrochemical testing is then performed on fabricated batteries to evaluate performance.

VB制作<sub&gt; 2</sub&gt; /空气电池电化学测试

A technique to investigate the properties and performance of new multi-electron metal/air battery systems is proposed and presented. A method for ...

科研

工程学

Simultaneous Synthesis of Single-walled Carbon Nanotubes and Graphene in a Magnetically-enhanced Arc Plasma

Carbon nanostructures such as single-walled carbon nanotubes (SWCNT) and graphene attract a deluge of interest of scholars nowadays due to their very promising application for molecular sensors, field effect transistor and super thin and flexible electronic devices1-4. Anodic arc discharge supported by the erosion of the anode material is one of the most practical and efficient methods, which can provide specific non-equilibrium processes and a high influx of carbon material to the developing structures at relatively higher temperature, and consequently the as-synthesized products have few structural defects and better crystallinity.
 To further improve the controllability and flexibility of the synthesis of carbon nanostructures in arc discharge, magnetic fields can be applied during the synthesis process according to the strong magnetic responses of arc plasmas. It was demonstrated that the magnetically-enhanced arc discharge can increase the average length of SWCNT 5, narrow the diameter distribution of metallic catalyst particles and carbon nanotubes 6, and change the ratio of metallic and semiconducting carbon nanotubes 7, as well as lead to graphene synthesis 8. 
 Furthermore, it is worthwhile to remark that when we introduce a non-uniform magnetic field with the component normal to the current in arc, the Lorentz force along the J&times;B direction can generate the plasmas jet and make effective delivery of carbon ion particles and heat flux to samples. As a result, large-scale graphene flakes and high-purity single-walled carbon nanotubes were simultaneously generated by such new magnetically-enhanced anodic arc method. Arc imaging, scanning electron microscope (SEM), transmission electron microscope (TEM) and Raman spectroscopy were employed to analyze the characterization of carbon nanostructures. These findings indicate a wide spectrum of opportunities to manipulate with the properties of nanostructures produced in plasmas by means of controlling the arc conditions.

Anodic arc discharge is one of the most practical and efficient methods to synthesize various carbon nanostructures. To increase the arc controllability and flexibility, a non-uniform magnetic field was introduced to process the one-step synthesis of large-scale graphene flakes and high-purity single-walled carbon nanotubes.

同时合成单壁碳纳米管和石墨在电弧等离子体磁增强

Carbon nanostructures such as single-walled carbon nanotubes (SWCNT) and graphene attract a deluge of interest of scholars nowadays due to their very ...

生物工程

Reverse Microemulsion-mediated Synthesis of Monometallic and Bimetallic Early Transition Metal Carbide and Nitride Nanoparticles

A reverse microemulsion is used to encapsulate monometallic or bimetallic early transition metal oxide nanoparticles in microporous silica shells. The silica-encapsulated metal oxide nanoparticles are then carburized in a methane/hydrogen atmosphere at temperatures over 800 &#176;C to form silica-encapsulated early transition metal carbide nanoparticles. During the carburization process, the silica shells prevent the sintering of adjacent carbide nanoparticles while also preventing the deposition of excess surface carbon. Alternatively, the silica-encapsulated metal oxide nanoparticles can be nitridized in an ammonia atmosphere at temperatures over 800 &#176;C to form silica-encapsulated early transition metal nitride nanoparticles. By adjusting the reverse microemulsion parameters, the thickness of the silica shells, and the carburization/nitridation conditions, the transition metal carbide or nitride nanoparticles can be tuned to various sizes, compositions, and crystal phases. After carburization or nitridation, the silica shells are then removed using either a room-temperature aqueous ammonium bifluoride solution or a 0.1 to 0.5 M NaOH solution at 40-60 &#176;C. While the silica shells are dissolving, a high surface area support, such as carbon black, can be added to these solutions to obtain supported early transition metal carbide or nitride nanoparticles. If no high surface area support is added, then the nanoparticles can be stored as a nanodispersion or centrifuged to obtain a nanopowder.

A &#8220;removable ceramic coating method&#8221; is presented in visual format for the synthesis of non-sintered and metal-terminated monometallic and bimetallic early transition metal carbide and nitride nanoparticles with tunable sizes and crystal structures.

单金属和双金属前过渡金属碳化物和氮化物纳米粒子的反相微乳液介导的合成

A reverse microemulsion is used to encapsulate monometallic or bimetallic early transition metal oxide nanoparticles in microporous silica shells. The ...

化学

Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation

Here a seedless and template-free technique is demonstrated to scalably grow bismuth nanowires, through thermal evaporation in high vacuum at RT. Conventionally reserved for the fabrication of metal thin films, thermal evaporation deposits bismuth into an array of vertical single crystalline nanowires over a flat thin film of vanadium held at RT, which is freshly deposited by magnetron sputtering or thermal evaporation. By controlling the temperature of the growth substrate the length and width of the nanowires can be tuned over a wide range. Responsible for this novel technique is a previously unknown nanowire growth mechanism that roots in the mild porosity of the vanadium thin film. Infiltrated into the vanadium pores, the bismuth domains (~ 1 nm) carry excessive surface energy that suppresses their melting point and continuously expels them out of the vanadium matrix to form nanowires. This discovery demonstrates the feasibility of scalable vapor phase synthesis of high purity nanomaterials without using any catalysts.

A protocol for seedless and high yield growth of bismuth nanowire arrays through vacuum thermal evaporation technique is presented.

铋纳米线阵列通过真空热蒸发无核增长

Here a seedless and template-free technique is demonstrated to scalably grow bismuth nanowires, through thermal evaporation in high vacuum at RT. ...

Aerosol-assisted Chemical Vapor Deposition of Metal Oxide Structures: Zinc Oxide Rods

Whilst columnar zinc oxide (ZnO) structures in the form of rods or wires have been synthesized previously by different liquid- or vapor-phase routes, their high cost production and/or incompatibility with microfabrication technologies, due to the use of pre-deposited catalyst-seeds and/or high processing temperatures exceeding 900 &#176;C, represent a drawback for a widespread use of these methods. Here, however, we report the synthesis of ZnO rods via a non-catalyzed vapor-solid mechanism enabled by using an aerosol-assisted chemical vapor deposition (CVD) method at 400 &#176;C with zinc chloride (ZnCl2) as the precursor and ethanol as the carrier solvent. This method provides both single-step formation of ZnO rods and the possibility of their direct integration with various substrate types, including silicon, silicon-based micromachined platforms, quartz, or high heat resistant polymers. This potentially facilitates the use of this method at a large-scale, due to its compatibility with state-of-the-art microfabrication processes for device manufacture. This report also describes the properties of these structures (e.g., morphology, crystalline phase, optical band gap, chemical composition, electrical resistance) and validates its gas sensing functionality towards carbon monoxide.

Columnar zinc oxide structures in the form of rods are synthesized via aerosol-assisted chemical vapor deposition without the use of pre-deposited catalyst-seed particles. This method is scalable and compatible with various substrates based on either silicon, quartz or polymers.

金属氧化物结构的气溶胶辅助化学气相沉积: 氧化锌棒

Whilst columnar zinc oxide (ZnO) structures in the form of rods or wires have been synthesized previously by different liquid- or vapor-phase routes, ...

Reactive Vapor Deposition of Conjugated Polymer Films on Arbitrary Substrates

We demonstrate a method of conformally coating conjugated polymers on arbitrary substrates using a custom-designed, low-pressure reaction chamber. Conductive polymers, poly(3,4-ethylenedioxythiophene) (PEDOT) and poly(3,4-propylenedioxythiophene) (PProDOT), and a semiconducting polymer, poly(thieno[3,2-b]thiophene) (PTT), were deposited on unconventional highly-disordered and textured substrates with high surface areas, such as paper, towels and fabrics. This reported deposition chamber is an improvement of previous vapor reactors because our system can accommodate both volatile and nonvolatile monomers, such as 3,4-propylenedioxythiophene and thieno[3,2-b]thiophene. Utilization of both solid and liquid oxidants are also demonstrated. One limitation of this method is that it lacks sophisticated in situ thickness monitors. Polymer coatings made by the commonly used solution-based coating methods, such as spin-coating and surface grafting, are often not uniform or susceptible to mechanical degradation. This reported vapor phase deposition method overcomes those drawbacks and is a strong alternative to common solution-based coating methods. Notably, polymer films coated by the reported method are uniform and conformal on rough surfaces, even at a micrometer scale. This feature allows for future application of vapor deposited polymers in electronics devices on flexible and highly textured substrates.

This paper presents a protocol for reactive vapor deposition of poly(3,4-ethylenedioxythiophene), poly(3,4-propylenedioxythiophene), and poly(thieno[3,2-b]thiophene) films on glass slides and rough substrates, such as textiles and paper.

任意基底上共轭聚合物薄膜的反应气相沉积

We demonstrate a method of conformally coating conjugated polymers on arbitrary substrates using a custom-designed, low-pressure reaction chamber. ...

Preparation and Characterization of C60/Graphene Hybrid Nanostructures

Physical thermal deposition in a high vacuum environment is a clean and controllable method for fabricating novel molecular nanostructures on graphene. We present methods for depositing and passively manipulating C60 molecules on rippled graphene that advance the pursuit of realizing applications involving 1D C60/graphene hybrid structures. The techniques applied in this exposition are geared towards high vacuum systems with preparation areas capable of supporting molecular deposition as well as thermal annealing of the samples. We focus on C60 deposition at low pressure using a homemade Knudsen cell connected to a scanning tunneling microscopy (STM) system. The number of molecules deposited is regulated by controlling the temperature of the Knudsen cell and the deposition time. One-dimensional (1D) C60 chain structures with widths of two to three molecules can be prepared via tuning of the experimental conditions. The surface mobility of the C60 molecules increases with annealing temperature allowing them to move within the periodic potential of the rippled graphene. Using this mechanism, it is possible to control the transition of 1D C60 chain structures to a hexagonal close packed quasi-1D stripe structure.

Preparation and Characterization of C60/Graphene Hybrid Nanostructures

Here we present a protocol for the fabrication of C60/graphene hybrid nanostructures by physical thermal evaporation. Particularly, the proper manipulation of deposition and annealing conditions allow the control over the creation of 1D and quasi 1D C60 structures on rippled graphene.

C 型60/石墨烯混合纳米结构的制备与表征

Physical thermal deposition in a high vacuum environment is a clean and controllable method for fabricating novel molecular nanostructures on graphene. We ...

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Vanadium dioxide is a material that has a reversible metal-insulator phase change near 68 &#176;C. To grow VO2 on a wide variety of substrates, with wafer-scale uniformity and angstrom level control of thickness, the method of atomic-layer deposition was chosen. This ALD process enables high-quality, low-temperature (&#8804;150 &#176;C) growth of ultrathin films (100-1000 &#197;) of VO2. For this demonstration, the VO2 films were grown on sapphire substrates. This low temperature growth technique produces mostly amorphous VO2 films. A subsequent anneal in an ultra-high vacuum chamber with a pressure of 7x10-4 Pa of ultra-high purity (99.999%) oxygen produced oriented, polycrystalline VO2 films. The crystallinity, phase, and strain of the VO2 were determined by Raman spectroscopy and X-ray diffraction, while the stoichiometry and impurity levels were determined by X-ray photoelectron spectroscopy, and finally the morphology was determined by atomic force microscopy. These data demonstrate the high-quality of the films grown by this technique. A model was created to fit to the data for VO2 in its metallic and insulating phases in the near infrared spectral region. The permittivity and refractive index of the ALD VO2 agreed well with the other fabrication methods in its insulating phase, but showed a difference in its metallic state. Finally, the analysis of the films&#39; optical properties enabled the creation of a wavelength- and temperature-dependent model of the complex optical refractive index for developing VO2 as a tunable refractive index material.

Thin films (100-1000 &#197;) of vanadium dioxide (VO2) were created by atomic-layer deposition (ALD) on sapphire substrates. Following this, the optical properties were characterized through the metal-insulator transition of VO2. From the measured optical properties, a model was created to describe the tunable refractive index of VO2.

二氧化钒原子层沉积与温度依赖性光学模型

Vanadium dioxide is a material that has a reversible metal-insulator phase change near 68 &#176;C. To grow VO2 on a wide variety of substrates, with ...

Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques

Electron and x-ray magnetic microscopies allow for high-resolution magnetic imaging down to tens of nanometers. However, the samples need to be prepared on transparent membranes which are very fragile and difficult to manipulate. We present processes for the fabrication of samples with magnetic micro- and nanostructures with spin configurations forming magnetic vortices suitable for Lorentz transmission electron microscopy and magnetic transmission x-ray microscopy studies. The samples are prepared on silicon nitride membranes and the fabrication consists of a spin coating, UV and electron-beam lithography, the chemical development of the resist, and the evaporation of the magnetic material followed by a lift-off process forming the final magnetic structures. The samples for the Lorentz transmission electron microscopy consist of magnetic nanodiscs prepared in a single lithography step. The samples for the magnetic x-ray transmission microscopy are used for time-resolved magnetization dynamic experiments, and magnetic nanodiscs are placed on a waveguide which is used for the generation of repeatable magnetic field pulses by passing an electric current through the waveguide. The waveguide is created in an extra lithography step.

A protocol for the fabrication of magnetic micro- and nanostructures with spin configurations forming magnetic vortices suitable for transmission electron microscopy (TEM) and magnetic transmission x-ray microscopy (MTXM) studies is presented.

用透射显微技术制备氮化硅薄膜磁性纳米结构的研究

Electron and x-ray magnetic microscopies allow for high-resolution magnetic imaging down to tens of nanometers. However, the samples need to be prepared ...

通过射频溅射将 Bi2Te3 和 Sb2Te3 薄膜沉积在玻璃基板上

Fabrication of Bi2Te3 and Sb2Te3 Thermoelectric Thin Films using Radio Frequency Magnetron Sputtering Technique

Through various studies on thermoelectric (TE) materials, thin film configuration gives superior advantages over conventional bulk TEs, including adaptability to curved and flexible substrates. Several different thin film deposition methods have been explored, yet magnetron sputtering is still favorable due to its high deposition efficiency and scalability. Therefore, this study aims to fabricate a bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thin film via the radio frequency (RF) magnetron sputtering method. The thin films were deposited on soda lime glass substrates at ambient temperature. The substrates were first washed using water and soap, ultrasonically cleaned with methanol, acetone, ethanol, and deionized water for 10 min, dried with nitrogen gas and hot plate, and finally treated under UV ozone for 10 min to remove residues before the coating process. A sputter target of Bi2Te3 and Sb2Te3 with Argon gas was used, and pre-sputtering was done to clean the target&#39;s surface. Then, a few clean substrates were loaded into the sputtering chamber, and the chamber was vacuumed until the pressure reached 2 x 10-5 Torr. The thin films were deposited for 60 min with Argon flow of 4 sccm and RF power at 75 W and 30 W for Bi2Te3 and Sb2Te3, respectively. This method resulted in highly uniform n-type Bi2Te3 and p-type Sb2Te3 thin films.

作者聚焦:通过射频磁控溅射实现高性能热电薄膜的进展

The manuscript describes a protocol for radio frequency magnetron sputtering of Bi2Te3 and Sb2Te3 thermoelectric thin films on glass substrates, which represents a reliable deposition method that provides a wide range of applications with the potential for further development.

化学气相沉积的有机磁体，钒四氰

摘要

探索更多视频

此视频中的章节

VB制作

同时合成单壁碳纳米管和石墨在电弧等离子体磁增强

单金属和双金属前过渡金属碳化物和氮化物纳米粒子的反相微乳液介导的合成

铋纳米线阵列通过真空热蒸发无核增长

金属氧化物结构的气溶胶辅助化学气相沉积: 氧化锌棒

任意基底上共轭聚合物薄膜的反应气相沉积

C 型₆₀/石墨烯混合纳米结构的制备与表征

二氧化钒原子层沉积与温度依赖性光学模型

用透射显微技术制备氮化硅薄膜磁性纳米结构的研究

使用射频磁控溅射技术制备Bi₂Te₃ 和Sb₂Te₃ 热电薄膜

化学气相沉积的有机磁体，钒四氰

摘要

探索更多视频

此视频中的章节

VB制作

同时合成单壁碳纳米管和石墨在电弧等离子体磁增强

单金属和双金属前过渡金属碳化物和氮化物纳米粒子的反相微乳液介导的合成

铋纳米线阵列通过真空热蒸发无核增长

金属氧化物结构的气溶胶辅助化学气相沉积: 氧化锌棒

任意基底上共轭聚合物薄膜的反应气相沉积

C 型60/石墨烯混合纳米结构的制备与表征

二氧化钒原子层沉积与温度依赖性光学模型

用透射显微技术制备氮化硅薄膜磁性纳米结构的研究

使用射频磁控溅射技术制备Bi2Te3 和Sb2Te3 热电薄膜

C 型₆₀/石墨烯混合纳米结构的制备与表征

使用射频磁控溅射技术制备Bi₂Te₃ 和Sb₂Te₃ 热电薄膜