Deposition of the First Layer of Polyimide and Performing the First Metallization
4:43
Deposition of the Second Layer of Polyimide and Performing the Second Metallization
5:12
Encapsulating the Sample with Polyimide and Opening via Holes and Mesh Structure
5:56
Etching the Sacrificial Layer and Transferring the Sample to a Flexible Substrate
7:39
Results: Current-Voltage Characteristics for the Phototransistor Array in the Curved State
8:45
Conclusion
Transcript
Our approach can help advance progress in the field of flexor semiconductor device fabrication. The main advantage of our fabrication procedure is it improves the electric current by current stabilate of the devices under deformation. Prepare a DU
Sign in or start your free trial to access this content
We present a detailed method to fabricate a deformable lateral NIPIN phototransistor array for curved image sensors. The phototransistor array with an open mesh form, which is composed of thin silicon islands and stretchable metal interconnectors, provides flexibility and stretchability. The parameter analyzer characterizes the electrical property of the fabricated phototransistor.
