Herstellung von flexiblen Bildsensor basierend auf seitliche NIPIN Fototransistoren

0:26

Si Doping and Isolation

2:12

Sacrificial Oxide Layer Deposition

2:59

Deposition of the First Layer of Polyimide and Performing the First Metallization

4:43

Deposition of the Second Layer of Polyimide and Performing the Second Metallization

5:12

Encapsulating the Sample with Polyimide and Opening via Holes and Mesh Structure

5:56

Etching the Sacrificial Layer and Transferring the Sample to a Flexible Substrate

7:39

Results: Current-Voltage Characteristics for the Phototransistor Array in the Curved State

8:45

Conclusion