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Graduate Institute of Electronics Engineering
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Site-controlled self-assembled InAs quantum dots grown on GaAs substrates.
Nanotechnology Jul, 2010 | Pubmed ID: 20601753
Establishment of 2D Crystal Heterostructures by Sulfurization of Sequential Transition Metal Depositions: Preparation, Characterization, and Selective Growth.
Nano letters Nov, 2016 | Pubmed ID: 27763763
The Growth Mechanism of Transition Metal Dichalcogenides by using Sulfurization of Pre-deposited Transition Metals and the 2D Crystal Hetero-structure Establishment.
Scientific reports Feb, 2017 | Pubmed ID: 28176836
National Taiwan University
Academia Sinica
Chong-Rong Wu1,2,
Tung-Wei Chu2,3,
Kuan-Chao Chen1,2,
Shih-Yen Lin1,2
1Graduate Institute of Electronics Engineering, National Taiwan University,
2Research Center for Applied Sciences, Academia Sinica,
3Graduate Institute of Photonics and Optoelectronics, National Taiwan University
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