Transition Metal Dichalcogenide (TMD) Thin Film Transfer
6:21
Results: Growth Mechanisms and Transistor Performance
8:11
Conclusion
Transcription
The overall goal of this growth technique is to establish complex vertical 2D crystal heterostructures, with good control over the number of 2D layers, using similar growth procedures for each material. The main advantage of this simple technique
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Through the sulfurization of pre-deposited transition metals, large-area and vertical 2D crystal hetero-structures can be fabricated. The film transferring and device fabrication procedures are also demonstrated in this report.