Accedi

The National Institute of Standards and Technology

1 ARTICLES PUBLISHED IN JoVE

Engineering

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Stephen R. D. Thomson¹, Justin K. Perron^2,3, Mark O. Kimball⁴, Sarabjit Mehta⁵, Francis M. Gasparini¹

¹Department of Physics, The State University of New York at Buffalo, ²Joint Quantum Institute, University of Maryland, ³The National Institute of Standards and Technology, ⁴Cryogenics and Fluids Branch, NASA Goddard Space Flight Center, ⁵HRL Laboratories

A method for permanently bonding two silicon wafers so as to realize a uniform enclosure is described. This includes wafer preparation, cleaning, RT bonding, and annealing processes. The resulting bonded wafers (cells) have uniformity of enclosure ~1%^1,2. The resulting geometry allows for measurements of confined liquids and gasses.