Accedi

São Paulo State University - UNESP

1 ARTICLES PUBLISHED IN JoVE

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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Tiago C. Gomes^*1, Dinesh Kumar^*2, Neri Alves^*1, Jeff Kettle^*2, Lucas Fugikawa-Santos^*3

¹School of Technology and Sciences, São Paulo State University - UNESP, ²Scholl of Electronic Engineering, Bangor University, ³Institute of Geosciences and Exact Sciences, São Paulo State University - UNESP

Anodization parameters for growth of the aluminum-oxide dielectric layer of zinc-oxide thin-film transistors (TFTs) are varied to determine the effects on the electrical parameter responses. Analysis of variance (ANOVA) is applied to a Plackett-Burman design of experiments (DOE) to determine the manufacturing conditions that result in optimized device performance.