1。基板の準備<ol><li> Siウェハから1 cm x 1 cmカタログシリコン基板をカットし、シリコンは、SEM特性（平面図と断面図）に適しています。 </li><li> 1センチメートルをx 1cmのガラス（ソーダライム、厚さ1mm）をカットし、ガラスは光学的および電気的特性評価に最適です。 </li><li>連絡先は、ガラス基板上に必要な場合は、Auの接点はマスクを用いて、真空中で蒸発させることができる。預金のAu、Auの預金50nmの密着性を向上させるための中間層としてCrを10nmである。 </li><li> 1センチメートルx 1 cmカタログポリマー試料（ 例えば、エチレンテトラフルオロエチレン、ETFE）を切り取ります。 </li><li> 5〜10分間イソプロパノールで超音波処理することによって基板をきれいにし、N 2流を用いたドライイソプロパノールですすいでください。 </li></ol> 2。レーザパラメータのレーザーアライメントと選択<ol><li> Ndのウォームアップ：YAGレーザと第四高調波発生（FHG）を使用して、選択IV高調波放射（波長266nm）は、2つのSEで構成されるカスケードのCOND高調波発生（SHG）。 </li><li> 2重量％をマウントします。のAl 2 O 3：ターゲットマニピュレータ上のZnO円形ターゲット（直径2 &quot;）が目標回転と移動を開始し、最大垂直範囲を設定し、ターゲットの中心にレーザースポットの位置を合わせ、レーザースポットが外部に触れることがないことを確認してください。スチールリングは、ターゲットを固定するために使用。ターゲットはターゲット全体表面の均一な切除を持つロト並進運動と一緒に移動されています。 </li><li>繰り返し率（ 例えば 10Hz）とパルスエネルギー（ 例えば 75 mJの）を選択します。パワーメータがパルスエネルギーおよびモニターレーザー安定性を調整します。 </li><li>選択した位置にフォーカスレンズを​​移動させ、スポットサイズを測定するためにターゲットに接続されている敏感な一枚の紙を使用しています。紙の上に1から5までのレーザーショットは合焦用レンズ火災の任意の位置のために。約1 J / cm 2のレーザフルエンスを持つようにレンズ位置を選択します。 </li></ol> 3。 PLDのセットアップ蒸着パラメータのDセレクション<ol><li>基板位置のアライメント<ol><li>アライメント·テスト用の基板として直径2 &quot;の周りに円形の紙シートをマウントします。 </li><li>ターゲットと基板との距離dは、TS = 50 mmまでの基板ホルダを移動します。 </li><li>真空度が10 -2 Paに到達するまで、プライマリおよびターボ分子ポンプとチャンバーを真空排気開始</li><li>ガスの種類（酸素）を選択し、適切なガス圧を持っている速度とガス流量を調整するポンプ（セクション4および5を参照）。円形コロナにわたって均一な膜厚を得るために、プルームの中心に対して基板マニピュレータオフアクシスのXY位置を調整します。 </li><li>ビームストッパー/パワー·メータを削除することでアブレーションを開始します。ターゲットが新規であるか、または、それが長い間使用されなかった場合、このプレアブレーションは、ターゲットをクリーニングする必要がある場合。 </li><li>デポジットパップ上で見ることができたときにアブレーションを停止rは、ビューポートから見て。 </li></ol></li><li>プラズマプルームの長さの決定<ol><li> 3.1.1手順に従ってください。 3.1.5に、アブレーション中に0.5を使用してデジタルカメラで写真を撮る - 1秒の蓄積時間を平均的に異なるプラズマプルームの上。 </li><li>リファレンスとしてd TSを写真を撮るから見えるプラズマプルームの長さを測定します（ 図3を参照）。 </li></ol></li><li>膜厚のキャリブレーション<ol><li>ターゲット（ すなわち 100ミリメートル、その他）から遠く基板を移動し、ターゲットからd TSに等しい距離にクオーツマイクロバランス（QCM）を移動。 </li><li>預金1000年のレーザーショット（ すなわち、1 &#39;40&#39;&#39;）と堆積質量値を測定し、その後すぐにQCMを移動します。 </li><li> 1.1に示すように、Si基板をマウントします。 </li><li>試験試料を堆積させる（ 例えば 18000レーザーショット、 すなわち 30 &#39;）およびcに断面SEM画像を使用し堆積速度（nm /パルス）をalibrate。 </li></ol></li></ol> 4。ナノ加工AZO膜の堆積<ol><li>粘着テープを用いて、試料ホルダーマニピュレータ上のセクション1のように調製し、基板をマウントします。 </li><li> 3.1.3 - 3.1.2の手順に従ってください。 </li><li>基板回転を開始します。 </li><li>コンパクトAZO膜の堆積<ol><li>イオン銃のスイッチを入れ、20sccmで（圧力が10 -2 Paの範囲にある）で75から100 WおよびArガス流束で100 eVで、RFパワーでイオンエネルギーを設定します。 5〜10分間のAr +イオン銃を持つクリーン基板。洗浄処理に近いガス入口の後、アルゴンを削除するには、チャンバーをポンプダウン。 </li><li>酸素ガスを挿入し、2 Paの酸素を持つように排気速度とガスフラックスを調整します。 </li><li> 18000枚（30 &#39;）のアブレーションと預金を開始します。アブレーションプルーム中に長さがステップ3.2で決定されるように同じであることを確認してください。 </li><li>停止アブレーション、近くグラム入口として、チャンバーをポンプダウン。 </li></ol></li><li>階層的に構造化されたAZO膜の堆積<ol><li>酸素ガスを挿入し、160 Paの酸素を持つように排気速度とガス流量を調整します。 </li><li> 18000枚（30 &#39;）のアブレーションと預金を開始します。アブレーションプルーム中に長さがステップ3.2で決定されるように同じであることを確認してください。 </li><li>チャンバーをポンプダウン、アブレーション、近くのガス入口を停止します。 </li></ol></li><li>チャンバーを大気開放し、サンプルを削除</li></ol> 5。電気的および光学的特性<ol><li> 4プローブ技術（ すなわちヴァン·デル·ポー法）を用いて面内輸送特性を測定します。連絡先のスキームについては、 図4を参照してください。電流プローブの代表的な値は1μA〜10 mAレンジである。測定は0.7センチメートル良い厚さの均一性（約5％）を確保するために×0.7 cmに低減サンプル領域に亘って行われる。 </li><li>視神経を測定サンプルのと裸の基板の透過率リットル。ガラス/フィルム界面に1に強度を設定することにより、基板への貢献のためにスペクトルを修正します。正確な補正の手順については、試料を入射ビームが直面しているガラス基板が搭載されていることを確認してください。 400〜700nmの範囲における平均透過率を計算することにより、可視光透過性を決定します。光の散乱フラクションを測定するために直径150mm積分球を使用し、ヘイズ率は、総透過光（ すなわち散乱し、前方に送信される）によって散乱された分数を割ることによって計算することができ、 図5を参照してください。 </li></ol>

<ol>
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プラズマプルームの形状は、特にガスの存在下で、密接にアブレーションプロセスに関連して、目視によりプラズマプルームを監視することは、堆積を制御することが重要である。酸化物ターゲットをアブレーションすることにより金属酸化物を堆積する場合、酸素はアブレーションプロセス中に酸素の損失をサポートするために必要です。低い酸素背景ガス圧で、堆積した材料は、酸素空?...

パルスレーザー堆積法（PLD）はフィルム（ 図1を参照）1を成長させるために、基板上に堆積させることができるアブレート種のプラズマの形成をもたらす固体ターゲットのレーザーアブレーション法を採用しています。背景の雰囲気（不活性または反応）との相互作用は、気相中での同種のクラスタの核生成します （ 図2を参照）2,3を誘導するために使用することができます。 PLD法による材料合成のための我々の戦略は慎重にPLD法で生成されたプラズマのダイナミクスを制御することにより、ボトムアップ·アプローチでの材料特性のチューニングに基づいています。クラスタサイズは、運動エネルギーと組成は4,5形態学的および構造的変化でフィルムの成長と結果に影響を与える成膜パラメータを適切に設定することによって変えることができる。利用することによって方法は、我々が（ 例えば、WO 3、銀4 O 4、Al 2 O 3の酸化数について、実証し、ここで説明ND TiO 2）は、6月11日ナノスケールでの材料構造を変更することにより、形態を調整する能力、密度、気孔率、構造秩序、化学量論と位相の度合い。これは、特定のアプリケーション12から16のための材料の設計を可能にする。太陽光発電のアプリケーションを参照して、我々は階層的にナノと色素増感太陽電池（DSSCでphotoanodesとして使用されるときに興味深い結果を示す13 &#39;木の森&#39;に似ているメソ構造のナノ粒子（&lt;10 nm）を組み立てることによって整理ナノ構造TiO 2を合成した）17。これらの以前の結果に基づいて、我々は、透明導電性酸化物としてAlドープZnO（AZO）膜の堆積のためのプロトコルを記述します。 透明導電性酸化物（TCOは）抵抗率&lt;10 -3Ω·cmであり、80％以上の光transmiを表示して、重いドーピングによって伝導体に変換し、高バンドギャップ（&gt; 3 eV）の材料である可視範囲内ttance。彼らはそのようなタッチスクリーン、太陽電池18から21のように、多くのアプリケーションにとって重要な要素であり、それらは、典型的には、スパッタ法、パルスレーザー蒸着法、化学蒸着法、噴霧熱分解と溶液ベースの化学的方法と同様に、異なる技術によって栽培されています。 TCOSうち、インジウムスズ酸化物（ITO）が広く、その低抵抗率のために研究されてきたが、高コストとインジウムの低い可用性の欠点がある。研究は、今、例えば、FドープSnO 2（FTO）、AlドープZnO（AZO）とF-ドープZnO（FZO）としてインジウムフリーシステムに向けて動いています。 入射光のインテリジェントな管理（ライトトラップ）を提供することが可能な電極は、太陽光発電の用途に特に興味深いものです。 、光の波長（ 例えば 300〜1,000 nm）に匹敵する規模での変調構造および形態を経由して散乱可視光への良好な制御を可能性を活用するには膜形態およびクラスタアセンブリアーキテクチャでは、必要とされる。 特に、我々は、AZO膜の形態と構造をチューニングする方法について説明します。コンパクトなAZOは、低圧（2 Paの酸素）に寄託し、室温で低抵抗率（4.5×10 -4オームcm）およびアゾと競争力のある可視光透過性（&gt; 90％）によって特徴付けられるAZOながら、高い温度で堆積階層構造は100Paとこれらの構造上のO 2圧力で切除することによって得られる最大80％、さらに22,23にヘイズ因子と強い光散乱機能を表示します。

<table border="1"><tbody><tr><td> 試薬/材料の名称 </td><td> 会社 </td><td> カタログ番号 </td></tr><tr><td>パルス状レーザ</td><td>コンティ-Quantronix </td><td> POWERLITE 8010 </td></tr><tr><td>パワーメーター</td><td>コヒーレント</td><td> FieldMaxII-TO </td></tr><tr><td>イオン銃</td><td>カマキリDEP </td><td> RFMax60 </td></tr><tr><td>マスフローコントローラ</td><td> MKS単位</td><td> 2179° </td></tr><tr><td>水晶振動子微量天秤</td><td> Infcon </td><td> XTC / 2 </td></tr><tr><td>背景ガス</td><td> Rivoira-Praxair社</td><td> 5.0酸素</td></tr><tr><td>ターゲット</td><td>クルトLesker </td><td> （リクエストに応じて作られる） </td></tr><tr><td>イソプロパノール</td><td>シグマアルドリッチ</td><td> 190764-2L </td></tr><tr><td>ソースメータ</td><td>ケースレー</td><td> K2400 </td></tr><tr><td>マグネットキット</td><td> ECOPIA </td><td> 0.55T-キット</td></tr><tr><td>分光光度計</td><td>パーキンエルマー</td><td>ラムダ1050 </td></tr></tbody></table>

fabrication of nano-engineered transparent conducting oxides by pulsed laser deposition

バックグラウンドガスの存在下でナノ秒パルスレーザー堆積（PLD）はプラズマプルーム拡張動態の適切な制御により調整可能な形態、構造、密度、化学量論を有する金属酸化物の堆積を可能にします。このような多様性は、ナノサイズのクラスターの階層的なアセンブリが​​特徴のコンパクトかつ緻密なナノポーラスからナノ構造体薄膜を製造するために悪用される可能性があります。 、低O 2圧力で）電気伝導性と芸術の状態に近い光透過性を備えたコンパクトフィルムを1：特に、我々は、光起電力素子の透明電極としてAlドープZnO（AZO）膜の2種類を製作するための詳細な方法について説明します透明導電性酸化物（TCO）は、このような有機太陽電池（OPVs）に使用されるポリマーなどの熱に敏感な材料と互換性があるように、室温で成膜することができる、2）ナノ木の森に似た非常に光散乱階層構造はprodアール高い圧力でuced。このような構造は、高ヘイズ率（&gt; 80％）を示し、光閉じ込め能力を高めるために利用されるかもしれない。ここにAZO膜に記載の方法は、例えば、TiO 2、Al 2 O 3を 、WO 3及びAg 4 O 4などの技術的用途に関連する他の金属酸化物に適用することができます。

酸素雰囲気中でのPLD法によるAZOの堆積は、低バックグラウンドガスの圧力（ すなわち、2 Pa）と高圧（ すなわち 160 Pa）で階層的に組み立てられたクラスタで構成されたメソポーラス森のような構造でコンパクトな透明導電膜を生成します。材料は、サイズが最大である（30nm）を2でPaの22ナノドメインで構成されている。 アブレーションされた種と?...

Watch this Scientific Journal Video about Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition at JoVE.com

Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

我々は、バックグラウンドガスの存在下でナノ秒パルスレーザー堆積（PLD）法によるナノ構造酸化物薄膜を堆積させるための実験方法を説明します。この方法AlドープZnO（AZO）膜を用いて、ナノツリー林の階層構造にコンパクトから、堆積させることができる。

パルスレーザー蒸着法によるナノエンジニアリング透明導電性酸化物の作製

Nanosecond Pulsed  Laser Deposition (PLD) in the presence of a background gas allows the deposition  of metal oxides with tunable morphology, structure, ...

fabrication-nano-engineered-transparent-conducting-oxides-pulsed

Research

JoVE Journal

Engineering

15.4K ビュー.  Politecnico di Milano. 我々は、バックグラウンドガスの存在下でナノ秒パルスレーザー堆積（PLD）法によるナノ構造酸化物薄膜を堆積させるための実験方法を説明します。この方法AlドープZnO（AZO）膜を用いて、ナノツリー林の階層構造にコンパクトから、堆積させることができる。

ビデオ: Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

Investigation of Early Plasma Evolution Induced by Ultrashort Laser Pulses

Early plasma is generated owing to high intensity laser irradiation of target and the subsequent target material ionization. Its dynamics plays a significant role in laser-material interaction, especially in the air environment1-11.
Early plasma evolution has been captured through pump-probe shadowgraphy1-3 and interferometry1,4-7. However, the studied time frames and applied laser parameter ranges are limited. For example, direct examinations of plasma front locations and electron number densities within a delay time of 100 picosecond (ps) with respect to the laser pulse peak are still very few, especially for the ultrashort pulse of a duration around 100 femtosecond (fs) and a low power density around 1014 W/cm2. Early plasma generated under these conditions has only been captured recently with high temporal and spatial resolutions12. The detailed setup strategy and procedures of this high precision measurement will be illustrated in this paper. The rationale of the measurement is optical pump-probe shadowgraphy: one ultrashort laser pulse is split to a pump pulse and a probe pulse, while the delay time between them can be adjusted by changing their beam path lengths. The pump pulse ablates the target and generates the early plasma, and the probe pulse propagates through the plasma region and detects the non-uniformity of electron number density. In addition, animations are generated using the calculated results from the simulation model of Ref. 12 to illustrate the plasma formation and evolution with a very high resolution (0.04 ~ 1 ps).
Both the experimental method and the simulation method can be applied to a broad range of time frames and laser parameters. These methods can be used to examine the early plasma generated not only from metals, but also from semiconductors and insulators.

An experimental method to examine the early plasma evolution induced by ultrashort laser pulses is described. Using this method, high quality images of early plasma are obtained with high temporal and spatial resolutions. A novel integrated atomistic model is used to simulate and explain the mechanisms of early plasma.

超短レーザーパルスにより誘起された初期プラズマの進化の解明

Early plasma is generated owing to high intensity laser irradiation of target and the subsequent target material ionization. Its dynamics plays a ...

工学

Fabrication of Spatially Confined Complex Oxides

Complex materials such as high Tc superconductors, multiferroics, and colossal magnetoresistors have electronic and magnetic properties that arise from the inherent strong electron correlations that reside within them. These materials can also possess electronic phase separation in which regions of vastly different resistive and magnetic behavior can coexist within a single crystal alloy material. By reducing the scale of these materials to length scales at and below the inherent size of the electronic domains, novel behaviors can be exposed. Because of this and the fact that spin-charge-lattice-orbital order parameters each involve correlation lengths, spatially reducing these materials for transport measurements is a critical step in understanding the fundamental physics that drives complex behaviors. These materials also offer great potential to become the next generation of electronic devices 1-3. Thus, the fabrication of low dimensional nano- or micro-structures is extremely important to achieve new functionality. This involves multiple controllable processes from high quality thin film growth to accurate electronic property characterization. Here, we present fabrication protocols of high quality microstructures for complex oxide manganite devices. Detailed descriptions and required equipment of thin film growth, photo-lithography, and wire-bonding are presented.

We describe the use of pulsed laser deposition (PLD), photolithography and wire-bonding techniques to create micrometer scale complex oxides devices. The PLD is utilized to grow epitaxial thin films. Photolithography and wire-bonding techniques are introduced to create practical devices for measurement purposes.

空間的に閉じ込められた複合酸化物の作製

Complex materials such as high Tc superconductors, multiferroics, and colossal magnetoresistors have electronic and magnetic properties that arise from ...

Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent thermal evaporation, and it absorbs visible light strongly. However, for a long time the record power conversion efficiency of SnS solar cells remained below 2%. Recently we demonstrated new certified record efficiencies of 4.36% using SnS deposited by atomic layer deposition, and 3.88% using thermal evaporation. Here the fabrication procedure for these record solar cells is described, and the statistical distribution of the fabrication process is reported. The standard deviation of efficiency measured on a single substrate is typically over 0.5%. All steps including substrate selection and cleaning, Mo sputtering for the rear contact (cathode), SnS deposition, annealing, surface passivation, Zn(O,S) buffer layer selection and deposition, transparent conductor (anode) deposition, and metallization are described. On each substrate we fabricate 11 individual devices, each with active area 0.25 cm2. Further, a system for high throughput measurements of current-voltage curves under simulated solar light, and external quantum efficiency measurement with variable light bias is described. With this system we are able to measure full data sets on all 11 devices in an automated manner and in minimal time. These results illustrate the value of studying large sample sets, rather than focusing narrowly on the highest performing devices. Large data sets help us to distinguish and remedy individual loss mechanisms affecting our devices.

Tin sulfide (SnS) is a candidate material for Earth-abundant, non-toxic solar cells. Here, we demonstrate the fabrication procedure of the SnS solar cells employing atomic layer deposition, which yields 4.36% certified power conversion efficiency, and thermal evaporation which yields 3.88%.

熱蒸着および原子層堆積法によって記録し、効率のSnS太陽電池を作ります

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent ...

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of biosensing devices. We report on a protocol of using KrF and ArF lasers irradiating Si (001) samples immersed in a liquid environment with low number of pulses and operating at moderately low pulse fluences to induce Si wettability modification. Wafers immersed for up to 4 hr in a 0.01% H2O2/H2O solution did not show measurable change in their initial contact angle (CA) ~75&#176;. However, the 500-pulse KrF and ArF lasers irradiation of such wafers in a microchamber filled with 0.01% H2O2/H2O solution at 250 and 65 mJ/cm2, respectively, has decreased the CA to near 15&#176;, indicating the formation of a superhydrophilic surface. The formation of OH-terminated Si (001), with no measurable change of the wafer&#8217;s surface morphology, has been confirmed by X-ray photoelectron spectroscopy and atomic force microscopy measurements. The selective area irradiated samples were then immersed in a biotin-conjugated fluorescein-stained nanospheres solution for 2 hr, resulting in a successful immobilization of the nanospheres in the non-irradiated area. This illustrates the potential of&#160;the method for selective area biofunctionalization and fabrication of advanced Si-based biosensing architectures. We also describe a similar protocol of irradiation of wafers immersed in methanol (CH3OH) using ArF laser operating at pulse fluence of 65 mJ/cm2 and in situ formation of a strongly hydrophobic surface of Si (001) with the CA of 103&#176;. The XPS results indicate ArF laser induced formation of Si&#8211;(OCH3)x compounds responsible for the observed hydrophobicity. However, no such compounds were found by XPS on the Si surface irradiated by KrF laser in methanol, demonstrating the inability of the KrF laser to photodissociate methanol and create -OCH3 radicals.

We report on a process of in situ alteration of HF treated Si (001) surface into a hydrophilic or hydrophobic state by irradiating samples in microfluidic chambers filled with&#160;H2O2/H2O solution (0.01%-0.5%) or methanol solutions using pulsed UV laser of a relative low pulse fluence.

液体環境におけるパルスUVレーザー照射によるシリコン表面の濡れ性の選択エリア変更

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of ...

Fabrication of 1-D Photonic Crystal Cavity on a Nanofiber Using Femtosecond Laser-induced Ablation

We present a protocol for fabricating 1-D Photonic Crystal (PhC) cavities on subwavelength-diameter tapered optical fibers, optical nanofibers, using femtosecond laser-induced ablation. We show that thousands of periodic nano-craters are fabricated on an optical nanofiber by irradiating with just a single femtosecond laser pulse. For a typical sample, periodic nano-craters with a period of 350 nm and with diameter gradually varying from 50 - 250 nm over a length of 1 mm are fabricated on a nanofiber with diameter around 450 - 550 nm. A key aspect of such a nanofabrication is that the nanofiber itself acts as a cylindrical lens and focuses the femtosecond laser beam on its shadow surface. Moreover, the single-shot fabrication makes it immune to mechanical instabilities and other fabrication imperfections. Such periodic nano-craters on nanofiber, act as a 1-D PhC and enable strong and broadband reflection while maintaining the high transmission out of the stopband. We also present a method to control the profile of the nano-crater array to fabricate apodized and defect-induced PhC cavities on the nanofiber. The strong confinement of the field, both transverse and longitudinal, in the nanofiber-based PhC cavities and the efficient integration to the fiber networks, may open new possibilities for nanophotonic applications and quantum information science.

We present a protocol for fabricating 1-D photonic crystal cavities on subwavelength diameter silica fibers (optical nanofibers) using femtosecond laser-induced ablation.

フェムト秒レーザー誘起アブレーションを用いたナノファイバー上の1次元フォトニック結晶共振器の作製

We present a protocol for fabricating 1-D Photonic Crystal (PhC) cavities on subwavelength-diameter tapered optical fibers, optical nanofibers, using ...

Fabrication of Polymer Microspheres for Optical Resonator and Laser Applications

This paper describes three methods of preparing fluorescent microspheres comprising &#960;-conjugated or non-conjugated polymers: vapor diffusion, interface precipitation, and mini-emulsion. In all methods, well-defined, micrometer-sized spheres are obtained from a self-assembling process in solution. The vapor diffusion method can result in spheres with the highest sphericity and surface smoothness, yet the types of the polymers able to form these spheres are limited. On the other hand, in the mini-emulsion method, microspheres can be made from various types of polymers, even from highly crystalline polymers with coplanar, &#960;-conjugated backbones. The photoluminescent (PL) properties from single isolated microspheres are unusual: the PL is confined inside the spheres, propagates at the circumference of the spheres via the total internal reflection at the polymer/air interface, and self-interferes to show sharp and periodic resonant PL lines. These resonating modes are so-called "whispering gallery modes" (WGMs). This work demonstrates how to measure WGM PL from single isolated spheres using the micro-photoluminescence (&#181;-PL) technique. In this technique, a focused laser beam irradiates a single microsphere, and the luminescence is detected by a spectrometer. A micromanipulation technique is then used to connect the microspheres one by one and to demonstrate the intersphere PL propagation and color conversion from coupled microspheres upon excitation at the perimeter of one sphere and detection of PL from the other microsphere. These techniques, &#181;-PL and micromanipulation, are useful for experiments on micro-optic application using polymer materials.

Protocols for the synthesis of microspheres from polymers, the manipulation of microspheres, and micro-photoluminescence measurements are presented.

光共振器およびレーザ応用のためのポリマーマイクロスフェアの作製

This paper describes three methods of preparing fluorescent microspheres comprising &#960;-conjugated or non-conjugated polymers: vapor diffusion, ...

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

Here, the authors report the embedded metal-mesh transparent electrode (EMTE), a new transparent electrode (TE) with a metal mesh completely embedded in a polymer film. This paper also presents a low-cost, vacuum-free fabrication method for this novel TE; the approach combines lithography, electroplating, and imprint transfer (LEIT) processing. The embedded nature of the EMTEs offers many advantages, such as high surface smoothness, which is essential for organic electronic device production; superior mechanical stability during bending; favorable resistance to chemicals and moisture; and strong adhesion with plastic film. LEIT fabrication features an electroplating process for vacuum-free metal deposition and is favorable for industrial mass production. Furthermore, LEIT allows for the fabrication of metal mesh with a high aspect ratio (i.e., thickness to linewidth), significantly enhancing its electrical conductance without adversely losing optical transmittance. We demonstrate several prototypes of flexible EMTEs, with sheet resistances lower than 1 &#937;/sq and transmittances greater than 90%, resulting in very high figures of merit (FoM) &#8211; up to 1.5 x 104 &#8211; which are amongst the best values in the published literature.

This protocol describes a solution-based fabrication strategy for high-performance, flexible, transparent electrodes with fully-embedded, thick metal mesh. Flexible transparent electrodes fabricated by this process demonstrate among the highest reported performances, including ultra-low sheet resistance, high optical transmittance, mechanical stability under bending, strong substrate adhesion, surface smoothness, and environmental stability.

埋め込み金属メッシュを用いた高性能で柔軟で透明な電極のための拡張可能なソリューション処理製作戦略

Here, the authors report the embedded metal-mesh transparent electrode (EMTE), a new transparent electrode (TE) with a metal mesh completely embedded in a ...

Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.&#160; We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.&#160; Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

We present a detailed method for fabricating ultra-thin color films with improved characteristics for optical coatings. The oblique angle deposition technique using an electron beam evaporator allows improved color tunability and purity. Fabricated films of Ge and Au on Si substrates were analyzed by reflectance measurements and color information conversion.

斜め蒸着を使用してメディアを高吸収極薄カラー フィルムの作製

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.&#160; We present ...

Production of Single Tracks of Ti-6Al-4V by Directed Energy Deposition to Determine the Layer Thickness for Multilayer Deposition

Directed Energy Deposition (DED), which is an additive manufacturing technique, involves the creation of a molten pool with a laser beam where metal powder is injected as particles. In general, this technique is employed to either fabricate or repair different components. In this technique, the final characteristics are affected by many factors. Indeed, one of the main tasks in building components by DED is the optimization of process parameters (such as laser power, laser speed, focus, etc.) which is usually carried out through an extensive experimental investigation. However, this sort of experiment is extremely lengthy and costly. Thus, in order to accelerate the optimization process, an investigation was conducted to develop a method based on the melt pool characterizations. In fact, in these experiments, single tracks of Ti-6Al-4V were deposited by a DED process with multiple combinations of laser power and laser speed. Surface morphology and dimensions of single tracks were analyzed, and geometrical characteristics of melt pools were evaluated after polishing and etching the cross-sections. Helpful information regarding the selection of optimal process parameters can be achieved by examining the melt pool features. These experiments are being extended to characterize the larger blocks with multiple layers. Indeed, this manuscript describes how it would be possible to quickly determine the layer thickness for the massive deposition, and avoid over or under-deposition according to the calculated energy density of the optimum parameters. Apart from the over or under-deposition, time and materials saving are the other great advantages of this approach in which the deposition of multilayer components can be started without any parameter optimization in terms of layer thickness.

In this research, a rapid method based on melt pool characterization is developed to estimate the layer thickness of Ti-6Al-4V components produced by directed energy deposition.

多層成膜の層の厚さを決定する指向性エネルギー蒸着法による Ti 6al-4 v の単一トラックの生産

Directed Energy Deposition (DED), which is an additive manufacturing technique, involves the creation of a molten pool with a laser beam where metal ...

Generation and Coherent Control of Pulsed Quantum Frequency Combs

We present a method for the generation and coherent manipulation of pulsed quantum frequency combs. Until now, methods of preparing high-dimensional states on-chip in a practical way have remained elusive due to the increasing complexity of the quantum circuitry needed to prepare and process such states. Here, we outline how high-dimensional, frequency-bin entangled, two-photon states can be generated at a stable, high generation rate by using a nested-cavity, actively mode-locked excitation of a nonlinear micro-cavity. This technique is used to produce pulsed quantum frequency combs. Moreover, we present how the quantum states can be coherently manipulated using standard telecommunications components such as programmable filters and electro-optic modulators. In particular, we show in detail how to accomplish state characterization measurements such as density matrix reconstruction, coincidence detection, and single photon spectrum determination. The presented methods form an accessible, reconfigurable, and scalable foundation for complex high-dimensional state preparation and manipulation protocols in the frequency domain.

A protocol is presented for the practical generation and coherent manipulation of high-dimensional frequency-bin entangled photon states using integrated micro-cavities and standard telecommunications components, respectively.

世代とパルスの量子周波数コムのコヒーレント制御

We present a method for the generation and coherent manipulation of pulsed quantum frequency combs. Until now, methods of preparing high-dimensional ...