著者は、LT-GaAs基板を提供するためPicometrixに感謝したいとありがたくミシガンスペースグラントコンソーシアム、ドクタージョンアルブレヒト（契約＃N66001-10-1から4027）、NSFキャリアによって管理DARPAヤング学部賞からの財政支援を認めるであろう賞は、博士サミールエルGhazaly（契約＃N00014-11-1から0096）、ポール博士真紀（契約＃N00014-12-1から0947）によって管理ONR若手研究賞、およびによって管理ARO若手研究賞によって管理博士が開発パーマー（契約＃W911NF-12-1から0253）。

1。プラズモン光導電エミッタ作製<ol><li>プラズモニック格子を作製。 <ol><li>イソプロパノール（2分間）、続いて、脱イオン水（10秒）ですすぎ、アセトン（2分）中に浸漬することにより、半導体ウエハをクリーニングします。 </li><li>窒素でサンプルを乾燥し、℃で90秒間、任意の残りの水を除去するために115℃ホットプレート上で、それを加熱する。 </li><li> 45秒間4,000 rpmで試料上でスピンマイクロケム950KのPMMA A4。プリベークは、3分間180℃のホットプレート上のレジスト。 </li><li>電子ビームリソグラフィツール（JEOL JBX-6300-FS）に試料をロードします。 100kVの加速電圧を用いて、650μC/ cm 2の周辺の基地用量でプラズモン格子パターンを露光する。 </li><li> MIBKでサンプルを浸漬することにより、PMMAの開発：90秒1時03 IPA混合。すぐに60秒のための純粋なイソプロパノール液にサンプルを転送します。 </li><li> 10秒間脱イオン水でサンプルを洗浄した後、窒素でサンプルを乾燥させます。 </li><li>プラズマストリッパー（YES-CV200RFS）に試料をロードします。デスカム10秒間100sccmのO 2流量で30℃で30 W RF電力を使用してサンプル。 </li><li> HCl中に浸漬することにより、表面酸化物を除去：H 2 30秒0 3時10分混合。すぐに4分間の脱イオン水をすすぎカスケードにサンプルを移す。 </li><li>金属蒸着前に大気中の酸素への曝露を最小限にするための脱イオン水をビーカーにサンプルを移す。 </li><li>金属蒸発器（デントンSJ-20）に脱イオン水に、試料を入れたビーカーを取る。チャンバーを大気開放してから、削除する、乾燥し、そして（これらのステップは、サンプルの表面酸化物の形成を防ぐために、中断せずに従うべきである）チャンバーにサンプルをロードします。 </li><li> 2×10 -6トル以下の圧力にチャンバーをポンプ。デポジットのTi / Auの（450分の50オングストローム）。 </li><li>チャンバーを大気開放し、サンプルを削除します。 </li><li>堆積した金属をリフトオフするために、テフロン（登録商標）のホルダに試料を置くアセトンのビーカー、カバー、そして一晩おきます。ビーカーを発見、超音波攪拌機に入れ、すべての不要な金属は（通常は30秒）が削除されるまで待ちます。 </li></ol></li><li>預金SiO 2のパッシベーション。 <ol><li> 1.1.2 - ステップ1.1.1のようにサンプルをクリーニングします。 </li><li>プラズマ化学気相堆積ツール（GSI PECVD）でサンプルをロードする。 200℃で、SiO 2の預金1500Å </li></ol></li><li>のSiO 2を介してコンタクトビアを開きます。 <ol><li> 1.1.2 - ステップ1.1.1のようにサンプルをクリーニングします。 </li><li> 30秒間4,000 rpmでHMDSでスピン。 30秒間4,000 rpmでMegaposit SPR 220から3.0フォトレジスト上にスピン。プリベークは、90秒間115℃のホットプレート上のレジスト。 </li><li>投影リソグラフィステッパー（GCAオートステップ200）に試料とマスクプレートをロードします。サンプルの位置を合わせて公開します。 </li><li> 90秒間115℃のホットプレート上で露光されたフォトレジストをポストベーク。 </li><li> 6 AZ 300 MIFの開発者のレジストの開発0秒。 </li><li>すぐにカスケードにサンプルを移動する4分間の脱イオン水をすすぎ。窒素でサンプルを乾燥させる。 </li><li>反応性イオンエッチング装置（LAM 9400）に試料をロードします。 500 WのTCP RF電力を用いてエッチングするのSiO 2、100 WのバイアスRF電力、15 sccmのSF6 - 、C 4 F 8、彼50sccmの50sccmの、80秒間のAr 50sccmの。 </li><li>イソプロパノール（2分）、続いてアセトン（5分）で、サンプルを置くことによって、フォトレジストの大部分を削除します。脱イオン水（10秒）ですすいでください。窒素で乾燥させます。 </li><li>プラズマストリッパー（YES-CV200RFS）でサンプルをロードすることにより、残留フォトレジストを除去。 5分間100sccmのO 2流量で30℃で800 W RF電力を用いてフォトレジストを除去。 </li></ol></li><li>アンテナ及びバイアス線を作製。 <ol><li>パターンアンテナとバイアスラインに1.3.6 - ステップ1.3.1を繰り返します。 </li><li>表面酸化物を除去するために1.1.9 - 1.1.8の手順を繰り返します。 </li><li>サンプルを含むビーカーを取り、金属蒸発器（デントンSJ-20）に脱イオン水。 </li><li>チャンバーを大気開放してから、すぐに削除、乾燥、およびチャンバーにサンプルをロードします。 </li><li> 2×10 -6トル以下の圧力にチャンバーをポンプ。預金のTi / Auの（10月4日、000Å）。 </li><li>チャンバーを大気開放し、サンプルを削除します。 </li><li>堆積された金属をリフトオフするステップ1.1.13を繰り返します。 </li></ol></li><li>サンプルをパッケージ化します。 <ol><li> 8ミリメートル穴付き2インチアルミワッシャーにのり直径12mm超半球のシリコンレンズのエッジを。 </li><li>一つはアルミワッシャーに、簡単に半田缶に金属トレースと糊のPCBボードを、。 </li><li>薄いエポキシ樹脂を用いてシリコンレンズ上に作製したプラズモニック光伝導テラヘルツエミッタプロトタイプをマウントします。 </li><li>同じアルミワッシャーに接着PCBボードにワイヤボンドは、デバイスの接触パッド。 </li><li> PCB基板上の金属トレースにはんだワイヤー。 </li><li>パラメトリック·アナライザ（ヒューレットパックにデバイスの接触パッドを接続しますテスト目的でPCB基板の対応するパッドに半田ワイヤを使用してARD 4155A）。 </li></ol></li></ol> 2。プラズモン光導電エミッタ特性<ol><li>デバイスの整列。 <ol><li>回転マウントにプラズモン光導テラヘルツエミッタプロトタイプを運ぶアルミワッシャーを置き、しっかりとチタンから光ポンプを集中：サファイア各デバイスの活性領域にレーザ（MIRA 900D V10 XW OPT 110V）をモードロック。 </li><li>光ポンプの電界が表面プラズモン波（プラズモン格子に対して垂直な）の効率的な励起に向くよう回転マウントを調整します。 </li><li>同時に、各デバイスにバイアス電圧を印加し、各デバイスに誘導される電流を測定するためにパラメトリックアナライザを使用。被試験各デバイスの光電流を最大にすることによって最適な光ポンプアライメントと偏光調整を確認してください。 </li></ol></li><li>出力電力測定urement。 <ol><li>各デバイスのモードロックポンプレーザ入射から光ポンプを変調する光チョッパ（ソーラボMC2000）を使用します。 </li><li>焦電検出器（スペクトル検出器株式会社SPI-A-65テラヘルツ）を使用してプラズモン光導テラヘルツエミッタプロトタイプの出力パワーを測定します。 </li><li>低ノイズレベルでテラヘルツ電力データを回復するために光チョッパの基準周波数をロックインアンプ（スタンフォードリサーチシステムズSR830）に焦電型検出器の出力を接続します。 </li></ol></li><li>放射スペクトル特性評価。 <ol><li>チタンで始まる：サファイアモード同期レーザとポンプ光とプローブ光にモード同期レーザの出力を分割するビームスプリッタを使用する。 </li><li>ポンプパスに光ビームを変調する電気光学変調器（ソーラボEO-AM-NR-C2）を使用します。テラヘルツ放射を生成するために被試験感光エミッタの活性領域上に、ポンプビームをフォーカス。 </li><li>平行にする第一ポリエチレン球面レンズを用いて発生したテラヘルツビーム。第二ポリエチレン球面レンズを使用したコリメートテラヘルツビームを当てる。 </li><li>テラヘルツビームの焦点の前に、ITO被覆ガラスフィルターを用いてプローブ光ビームにコリメートされたテラヘルツビームを組み合わせる。 </li><li>厚さ1mmを置き、&lt;110&gt; ZnTeの結晶は、光学とテラヘルツビームを合わせた焦点に回転ステージ上に搭載。 </li><li>たZnTe結晶の内部に相互作用する光とテラヘルツパルス間の時間遅延を変化させる電動式リニアステージ（Thorlabs社NRT100）を使用して、光プローブ路に制御可能な光学遅延線を挿入する。 </li><li>プローブ経路に半波長板を用いて、テラヘルツ偏光方向に対して45°の角度であることが光プローブの偏光を回転させる。 </li><li>たZnTe結晶後四半期波長板を使用して、円偏光に光ビームの偏光に変換します。 </li><li> CIRCULスプリットウォラストンプリズムによって、2つのブランチにアルリー偏光ビーム。ロックイン増幅器に接続された2つの平衡検出器を使用して、各ブランチにおける光ビームのパワーを測定する。 </li><li>コンピュータに電動遅延線とロックインアンプを接続します。 、繰り返し電動遅延線の位置を移動するためのMatlabのスクリプトを書いて一時停止し、ロックインアンプからの信号の大きさをお読みください。 </li><li>光の速度、総光遅延の長さを分割介して、時間領域にステージ位置を変換し、周波数領域データを取得するために慎重なフーリエ変換（Matlabのを使用）した。 </li></ol></li></ol>

<ol>
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H., Polley, A., Ralph, S. E. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Efficient+photoconductive+terahertz+source+using+line+excitation.">Efficient photoconductive terahertz source using line excitation.</a> Opt. Lett. 30, 2490-2492 (2005).</li><li>Dreyhaupt, A., Winnerl, S., Dekorsy, T., Helm, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High-intensity+terahertz+radiation+from+a+microstructured+large-area+photoconductor.">High-intensity terahertz radiation from a microstructured large-area photoconductor.</a> Appl. Phys. Lett. 86, 121114 (2005).</li><li>Brown, E. R., Lee, A. W. M., Navi, B. S., Bjarnason, J. E. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Characterization+of+a+planar+self-complementary+square-spiral+antenna+in+the+THz+region.">Characterization of a planar self-complementary square-spiral antenna in the THz region.</a> Microwave Opt. Technol. Lett. 48, 524-529 (2006).</li><li>Huo, Y., Taylor, G. W., Bansal, R. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Planar+log-periodic+antennas+on+extended+hemishperical+silicon+lenses+for+millimeter/submillimeter+wave+detection+applications.">Planar log-periodic antennas on extended hemishperical silicon lenses for millimeter/submillimeter wave detection applications.</a> Int. J. Infrared and Millimeter Waves. 23, 819 (2002).</li><li>Heshmat, B., Pahlevaninezhad, H., Pang, Y., Masnadi-Shirazi, M., Lewis, R. B., Tiedje, T., Gordon, R., Darcie, T. E. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> Nanoplasmonic Terahertz Photoconductive Switch on GaAs. Nano Lett. 12, 6255-6259 (2012).</li><li>Berry, C. W., Hashemi, M. R., Unlu, M., Jarrahi, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Significant+Performance+Enhancement+in+Photoconductive+Terahertz+Optoelectronics+by+Incorporating+Plasmonic+Contact+Electrodes.">Significant Performance Enhancement in Photoconductive Terahertz Optoelectronics by Incorporating Plasmonic Contact Electrodes.</a> Nature Communications. 4, 1622 (2013).</li><li>Wang, N., Berry, C. W., Hashemi, M. R., Jarrahi, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Plasmonic+photoconductive+detectors+for+enhanced+terahertz+detection+sensitivity.">Plasmonic photoconductive detectors for enhanced terahertz detection sensitivity.</a> Optics Express. , (2013).</li><li>Hsieh, B. -. Y., Jarrahi, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Analysis+of+periodic+metallic+nano-slits+for+efficient+interaction+of+terahertz+and+optical+waves+at+nano-scale+dimensions.">Analysis of periodic metallic nano-slits for efficient interaction of terahertz and optical waves at nano-scale dimensions.</a> J. Appl. Phys. 109, 084326 (2011).</li><li>Hsieh, B. -. Y., Wang, N., Jarrahi, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Toward+Ultrafast+Pump-Probe+Measurements+at+the+Nanoscale.+Special+Issue+of+"Optics+in+2011.">Toward Ultrafast Pump-Probe Measurements at the Nanoscale. Special Issue of "Optics in 2011.</a> Optics &amp; Photonics News. 22, (2011).</li><li>Hsieh, B. -. Y., Jarrahi, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Simultaneous+focusing+of+terahertz+and+optical+waves+into+nano-scale.">Simultaneous focusing of terahertz and optical waves into nano-scale.</a> Proc. Int. Conf. Infrared, Millimeter, and Terahertz Waves. , 1-2 (2011).</li><li>Jackson, A. W., Ibbetson, J. P., Gossard, A. C., Mishra, U. K. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Reduced+thermal+conductivity+in+low-temperature+grown+GaAs.">Reduced thermal conductivity in low-temperature grown GaAs.</a> Appl. Phys. Lett. 74, 2325-2327 (1999).</li></ol>

利害の衝突は宣言されていない。

このビデオ本稿では、2桁光 - テラヘルツ変換効率を高めるためにプラズモン接触電極構成を使用して新規な感光テラヘルツ生成手法を提案する。提示プラズモン光導電性エミッタからのテラヘルツ放射電力の大幅な増加は、将来の高感度テラヘルツイメージング、分光法と高度な化学物質の識別、医療用画像処理、生物学的センシング、天文学、大気センシング、セキュリティスクリーニン...

我々は、2桁光 - テラヘルツ変換効率を高めるためにプラズモン接触電極構成を使用して新規な感光テラヘルツエミッタを提示する。我々の技術、すなわち、従来の光導電テラヘルツエミッタ、高い量子効率と、従来の感光体の超高速動作の間の固有のトレードオフに由来する低出力電力と貧しい電力効率の最も重要な制限に対処しています。 このリープフロッグ性能改善につながった私たちの設計における重要なノベルティの一つは、サブ内に収集することができるように、コンタクト電極に近接した光生成キャリアを多数蓄積するコンタクト電極構造を設計することであるピコ秒時間スケール。換言すれば、感光体超高速動作、高量子効率とのトレードオフは、光属の空間操作によって緩和されるテッドキャリア。プラズモニック接触電極（1）プラズモン電極（回折限界を超えて）、金属接触で（2）異常 ​​光強化と半導体インターフェース10、11を光吸収の間にナノスケールデバイスの活性領域への光閉じ込めを可能にすることにより、このユニークな機能を提供します。当社のソリューションのもう一つの重要な属性は、テラヘルツ放射アンテナに寄生負荷のかなりの増加することなく、大きな感光アクティブ領域に対応することです。活用大感光アクティブ領域は、従来の光導電性エミッタからの最大放射電力のための究極の限界である、キャリアスクリーニング効果と熱破壊を軽減できます。このビデオの記事は、支配物理学、数値モデリング、および実験的検証を記述することで我々の提示ソリューションのユニークな属性に集中している。我々は実験的にプラズモニックなPhotから50倍も高いテラヘルツパワーを発揮非プラズモニック接触電極と同様の光導電性エミッタと比較しoconductiveエミッタ。

<table border="1">
 <tbody>
 <tr>
 <td>&nbsp;</td>
 <td>&nbsp;</td>
 <td>&nbsp;</td>
 <td>Reagent</td>
 </tr>
 <tr>
 <td>Polymethyl Methacrylate (PMMA)</td>
 <td>MicroChem</td>
 <td>950K PMMA A4</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>Hexamethyldisilazane (HMDS)</td>
 <td>Shin-Etsu MicroSI</td>
 <td>MicroPrime HP Primer</td>
 <td>&nbsp;</td>
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 <td>Optical Photoresist</td>
 <td>Dow Chemical</td>
 <td>Megaposit SPR 220-3.0</td>
 <td>&nbsp;</td>
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 <td>Photoresist Developer</td>
 <td>AZ Electronic Materials</td>
 <td>AZ 300 MIF Developer</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>Methyl Iso-Butyl Keytone (MIBK)</td>
 <td>Avantor Performance Materials</td>
 <td>9322-03</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>&nbsp;</td>
 <td>&nbsp;</td>
 <td>&nbsp;</td>
 <td>Equipment</td>
 </tr>
 <tr>
 <td>Ti:Sapphire Mode-Locked Laser</td>
 <td>Coherent</td>
 <td>MIRA 900D V10 XW OPT 110V</td>
 <td>&nbsp;</td>
 </tr>
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 <td>Pyroelectric Detector</td>
 <td>Spectrum Detector</td>
 <td>SPI-A-65 THz</td>
 <td>&nbsp;</td>
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 <td>Electron-Beam Lithography Tool</td>
 <td>JEOL</td>
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 <td>GSI</td>
 <td>GSI PECVD System</td>
 <td>&nbsp;</td>
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 <td>Projection Lithography Stepper</td>
 <td>GCA</td>
 <td>AutoStep 200</td>
 <td>&nbsp;</td>
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 <td>Reactive Ion Etcher</td>
 <td>LAM Research</td>
 <td>9400</td>
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 <td>Hewlett Packard</td>
 <td>4155A</td>
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 <td>Optical Chopper</td>
 <td>Thorlabs</td>
 <td>MC2000</td>
 <td>&nbsp;</td>
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 <td>Lock-in Amplifier</td>
 <td>Stanford Research Systems</td>
 <td>SR830</td>
 <td>&nbsp;</td>
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 <td>Electrooptic Modulator</td>
 <td>Thorlabs</td>
 <td>EO-AM-NR-C2</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>Motorized Linear Stage</td>
 <td>Thorlabs</td>
 <td>NRT100</td>
 <td>&nbsp;</td>
 </tr>
 </tbody>
</table>

design, fabrication, and experimental characterization of plasmonic photoconductive terahertz emitters

このビデオの記事では、テラヘルツ波を発生させるために非常に効率的な方法の詳細なデモを提示します。我々の技術は、テラヘルツ生成1-8のための最も一般的に使用される技術の一つとなっている光伝導に基づいている。感光エミッタにおけるテラヘルツパルス発生をヘテロダイン又はレーザ照射による超高速光導電体を励起することによって達成される。ポンプレーザのエンベロープに追従誘起光電流は、テラヘルツ放射を生成するために感光コンタクト電極に接続されたテラヘルツ放射アンテナに送られる。感光エミッタの量子効率が理論的に100％に達することができるが、従来の光導電体のコンタクト電極に光生成キャリアの比較的長い輸送経路の長さは厳しく、その量子効率を制限してきた。また、キャリアスクリーニング効果と熱破壊は厳密には最大出力pを制限するとower従来の光伝導テラヘルツ光源の。従来の光導テラヘルツ放射体の量子効率の限界に対処するために、我々は、同時に高い量子効率および超高速動作を提供するプラズモンコンタクト電極構造を組み込んだ新たな感光エミッタ概念を開発した。ナノスケールプラズモンコンタクト電極を用いることにより、我々はかなり従来の感光体9と比較して、感光コンタクト電極に平均光生成キャリア輸送路を低減する。本手法はまた、高い光ポンプパワーでキャリアスクリーニング効果と熱破壊を防止することにより、最大のテラヘルツ放射電力を昇圧し、アンテナに容量性負荷が大幅に増大させることなく、感光体活性領域を増加させることができる。プラズモンコンタクト電極を組み込むことにより、従来の感光TEの光 - テラヘルツ電力変換効率を高めることを実証50 10倍rahertzエミッタ。

電極に連絡するキャリア輸送時間を短縮するプラズモンコンタクト電極を組み込んだ（ 図1a）は、従来とプラズモン（ 図1b）感光エミッタ：テラヘルツパワー増強のためのプラズモン電極の電位を示すために、我々は2つのテラヘルツエミッタを作製した。両方ともデザインは同じLT-GaAs基板上に作製さ100μmと30μmの最大値と最小幅で60μmの長いボウタイアンテナに接続...

Watch this Scientific Journal Video about Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters at JoVE.com

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

我々は、設計、製造、および従来型の光導電性エミッタに比べて大きさより高いテラヘルツパワーレベルの二桁を提供プラズモン光導電性エミッタの実験的特性評価のための方法を記載している。

プラズモニック光伝導テラヘルツエミッターの設計、製作、および実験特性

In this video article we present a detailed demonstration of a highly efficient method for generating terahertz waves. Our technique is based on ...

design-fabrication-experimental-characterization-plasmonic

Research

Education

JoVE Core

JoVE Journal

Electrical Engineering

Engineering

Unit 1

System Protection

SCIENTISTS IN ACTION

14.8K ビュー.  University of Michigan. 我々は、設計、製造、および従来型の光導電性エミッタに比べて大きさより高いテラヘルツパワーレベルの二桁を提供プラズモン光導電性エミッタの実験的特性評価のための方法を記載している。

ビデオ: Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

Terahertz Microfluidic Sensing Using a Parallel-plate Waveguide Sensor

Refractive index (RI) sensing is a powerful noninvasive and label-free sensing technique for the identification, detection and monitoring of microfluidic samples with a wide range of possible sensor designs such as interferometers and resonators 1,2. Most of the existing RI sensing applications focus on biological materials in aqueous solutions in visible and IR frequencies, such as DNA hybridization and genome sequencing. At terahertz frequencies, applications include quality control, monitoring of industrial processes and sensing and detection applications involving nonpolar materials.
Several potential designs for refractive index sensors in the terahertz regime exist, including photonic crystal waveguides 3, asymmetric split-ring resonators 4, and photonic band gap structures integrated into parallel-plate waveguides 5. Many of these designs are based on optical resonators such as rings or cavities. The resonant frequencies of these structures are dependent on the refractive index of the material in or around the resonator. By monitoring the shifts in resonant frequency the refractive index of a sample can be accurately measured and this in turn can be used to identify a material, monitor contamination or dilution, etc.
The sensor design we use here is based on a simple parallel-plate waveguide 6,7. A rectangular groove machined into one face acts as a resonant cavity (Figures 1 and 2). When terahertz radiation is coupled into the waveguide and propagates in the lowest-order transverse-electric (TE1) mode, the result is a single strong resonant feature with a tunable resonant frequency that is dependent on the geometry of the groove 6,8. This groove can be filled with nonpolar liquid microfluidic samples which cause a shift in the observed resonant frequency that depends on the amount of liquid in the groove and its refractive index 9.
Our technique has an advantage over other terahertz techniques in its simplicity, both in fabrication and implementation, since the procedure can be accomplished with standard laboratory equipment without the need for a clean room or any special fabrication or experimental techniques. It can also be easily expanded to multichannel operation by the incorporation of multiple grooves 10. In this video we will describe our complete experimental procedure, from the design of the sensor to the data analysis and determination of the sample refractive index.

The procedure for implementing a refractive index sensor for terahertz frequencies based on a grooved parallel-plate waveguide geometry is described here. The method yields a measurement of the refractive index of a small volume of liquid through monitoring of the shift in the resonant frequency of the waveguide structure

平行平板導波センサを用いたテラヘルツマイクロ流体センシング

Refractive index (RI) sensing is a powerful noninvasive and label-free sensing technique for the identification, detection and monitoring of microfluidic ...

工学

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers

Metamaterials (MM), artificial materials engineered to have properties that may not be found in nature, have been widely explored since the first theoretical1 and experimental demonstration2 of their unique properties. MMs can provide a highly controllable electromagnetic response, and to date have been demonstrated in every technologically relevant spectral range including the optical3, near IR4, mid IR5 , THz6 , mm-wave7 , microwave8 and radio9 bands. Applications include perfect lenses10, sensors11, telecommunications12, invisibility cloaks13 and filters14,15. We have recently developed single band16, dual band17 and broadband18 THz metamaterial absorber devices capable of greater than 80% absorption at the resonance peak. The concept of a MM absorber is especially important at THz frequencies where it is difficult to find strong frequency selective THz absorbers19. In our MM absorber the THz radiation is absorbed in a thickness of ~ &lambda;/20, overcoming the thickness limitation of traditional quarter wavelength absorbers. MM absorbers naturally lend themselves to THz detection applications, such as thermal sensors, and if integrated with suitable THz sources (e.g. QCLs), could lead to compact, highly sensitive, low cost, real time THz imaging systems.

This protocol outlines the simulation, fabrication and characterization of THz metamaterial absorbers. Such absorbers, when coupled with an appropriate sensor, have applications in THz imaging and spectroscopy.

テラヘルツメタマテリアルアブソーバのシミュレーション、作製と評価

Metamaterials (MM),  artificial materials engineered to have properties that may not be found in  nature, have been widely explored since the first ...

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

Slow light has been one of the hot topics in the photonics community in the past decade, generating great interest both from a fundamental point of view and for its considerable potential for practical applications. Slow light photonic crystal waveguides, in particular, have played a major part and have been successfully employed for delaying optical signals1-4 and the enhancement of both linear5-7 and nonlinear devices.8-11
Photonic crystal cavities achieve similar effects to that of slow light waveguides, but over a reduced band-width. These cavities offer high Q-factor/volume ratio, for the realization of optically12 and electrically13 pumped ultra-low threshold lasers and the enhancement of nonlinear effects.14-16 Furthermore, passive filters17 and modulators18-19 have been demonstrated, exhibiting ultra-narrow line-width, high free-spectral range and record values of low energy consumption.
To attain these exciting results, a robust repeatable fabrication protocol must be developed. In this paper we take an in-depth look at our fabrication protocol which employs electron-beam lithography for the definition of photonic crystal patterns and uses wet and dry etching techniques. Our optimised fabrication recipe results in photonic crystals that do not suffer from vertical asymmetry and exhibit very good edge-wall roughness. We discuss the results of varying the etching parameters and the detrimental effects that they can have on a device, leading to a diagnostic route that can be taken to identify and eliminate similar issues.
The key to evaluating slow light waveguides is the passive characterization of transmission and group index spectra. Various methods have been reported, most notably resolving the Fabry-Perot fringes of the transmission spectrum20-21 and interferometric techniques.22-25 Here, we describe a direct, broadband measurement technique combining spectral interferometry with Fourier transform analysis.26 Our method stands out for its simplicity and power, as we can characterise a bare photonic crystal with access waveguides, without need for on-chip interference components, and the setup only consists of a Mach-Zehnder interferometer, with no need for moving parts and delay scans.
When characterising photonic crystal cavities, techniques involving internal sources21 or external waveguides directly coupled to the cavity27 impact on the performance of the cavity itself, thereby distorting the measurement. Here, we describe a novel and non-intrusive technique that makes use of a cross-polarised probe beam and is known as resonant scattering (RS), where the probe is coupled out-of plane into the cavity through an objective. The technique was first demonstrated by McCutcheon et al.28 and further developed by Galli et al.29

Use of photonic crystal slow light waveguides and cavities has been widely adopted by the photonics community in many differing applications. Therefore fabrication and characterization of these devices are of great interest. This paper outlines our fabrication technique and two optical characterization methods, namely: interferometric (waveguides) and resonant scattering (cavities).

フォトニック結晶スローライト導波路とキャビティの作製と評価

Slow light has been one of the hot topics in the photonics community in the past decade, generating great interest both from a fundamental point of view ...

Fabrication and Characterization of Disordered Polymer Optical Fibers for Transverse Anderson Localization of Light

We develop and characterize a disordered polymer optical fiber that uses transverse Anderson localization as a novel waveguiding mechanism. The developed polymer optical fiber is composed of 80,000 strands of poly (methyl methacrylate) (PMMA) and polystyrene (PS) that are randomly mixed and drawn into a square cross section optical fiber with a side width of 250 &mu;m. Initially, each strand is 200 &mu;m in diameter and 8-inches long. During the mixing process of the original fiber strands, the fibers cross over each other; however, a large draw ratio guarantees that the refractive index profile is invariant along the length of the fiber for several tens of centimeters. The large refractive index difference of 0.1 between the disordered sites results in a small localized beam radius that is comparable to the beam radius of conventional optical fibers. The input light is launched from a standard single mode optical fiber using the butt-coupling method and the near-field output beam from the disordered fiber is imaged using a 40X objective and a CCD camera. The output beam diameter agrees well with the expected results from the numerical simulations. The disordered optical fiber presented in this work is the first device-level implementation of 2D Anderson localization, and can potentially be used for image transport and short-haul optical communication systems.

We develop and characterize a disordered polymer optical fiber that uses transverse Anderson localization as a novel waveguiding mechanism. This microstructured fiber can transport a small localized beam with a radius that is comparable to the beam radius of conventional optical fibers.

ライトの横アンダーソン局在のために無秩序ポリマー光ファイバの作製と評価

We develop and characterize a disordered polymer optical fiber that uses transverse Anderson localization as a novel waveguiding mechanism. The developed ...

Patterning via Optical Saturable Transitions - Fabrication and Characterization

This protocol describes the fabrication and characterization of nanostructures using a novel nanolithographic technique called Patterning via Optical Saturable Transitions (POST). In this technique the chemical properties of organic photochromic molecules that undergo single-photon reactions are exploited, enabling rapid top-down nanopatterning over large areas at low light intensities, thereby, allowing for the circumvention of the far-field diffraction barrier.4 Simple, cost-effective, high throughput and resolution alternatives to nanopatterning are being explored, such as, two-photon polymerization5,6, beam pen lithography (BPL)7, scanning electron beam lithography (SEBL), and focused ion beam (FIB) patterning. However, multi-photon approaches require high light intensities, which limit their potential for high throughput and offer low image contrast. Although, electron and ion beam lithographic processes offer increased resolution, the serial nature of the process is limited to slow writing speeds, which also prevents patterning of features over large areas. Beam-pen lithography is an approach towards parallel near-field optical lithography. However, the gap between the source of the beam and the surface of the photoresist needs to be controlled extremely precisely for good pattern uniformity and this is very challenging to accomplish for large arrays of beams. Patterning via Optical Saturable Transitions (POST) is an alternative optical nanopatterning technique for patterning sub-wavelength features1-3. Since this technique uses single photons instead of electrons, it is extremely fast and does not require high light intensities1-3, opening the door to massive parallelization.

We report that the diffraction limit of conventional optical lithography can be overcome by exploiting the transitions of organic photochromic derivatives induced by their photoisomerization at low light intensities.1-3 This paper outlines our fabrication technique and two locking mechanisms, namely: dissolution of one photoisomer and electrochemical oxidation.

光可飽和遷移を経由してパターニング - 作製と特性評価

This protocol describes the fabrication and characterization of nanostructures using a novel nanolithographic technique called Patterning via Optical ...

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices have used devices prepared by spin coating, a process that is not amenable to large-scale fabrication. This mismatch in device fabrication makes it difficult to translate quantitative results obtained in the laboratory to the commercial level, making optimization difficult. Using a mini-slot die coater, this mismatch can be resolved by translating the commercial process to the laboratory and characterizing the structure formation in the active layer of the device in real time and in situ as films are coated onto a substrate. The evolution of the morphology was characterized under different conditions, allowing us to propose a mechanism by which the structures form and grow. This mini-slot die coater offers a simple, convenient, material efficient route by which the morphology in the active layer can be optimized under industrially relevant conditions. The goal of this protocol is to show experimental details of how a solar cell device is fabricated using a mini-slot die coater and technical details of running in situ structure characterization using the mini-slot die coater.

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Here, we present a protocol to fabricate organic thin film solar cells using a mini-slot die coater and related in-line structure characterizations using synchrotron scattering techniques.

バルクヘテロ接合太陽電池の印刷作製と<em&gt;その場で</em&gt;形態キャラクタリゼーション

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices ...

Free-form Light Actuators &#8212; Fabrication and Control of Actuation in Microscopic Scale

Liquid crystalline elastomers (LCEs) are smart materials capable of reversible shape-change in response to external stimuli, and have attracted researchers&#39; attention in many fields. Most of the studies focused on macroscopic LCE structures (films, fibers) and their miniaturization is still in its infancy. Recently developed lithography techniques, e.g., mask exposure and replica molding, only allow for creating 2D structures on LCE thin films. Direct laser writing (DLW) opens access to truly 3D fabrication in the microscopic scale. However, controlling the actuation topology and dynamics at the same length scale remains a challenge.
In this paper we report on a method to control the liquid crystal (LC) molecular alignment in the LCE microstructures of arbitrary three-dimensional shape. This was made possible by a combination of direct laser writing for both the LCE structures as well as for micrograting patterns inducing local LC alignment. Several types of grating patterns were used to introduce different LC alignments, which can be subsequently patterned into the LCE structures. This protocol allows one to obtain LCE microstructures with engineered alignments able to perform multiple opto-mechanical actuation, thus being capable of multiple functionalities. Applications can be foreseen in the fields of tunable photonics, micro-robotics, lab-on-chip technology and others.

Free-form Light Actuators &amp;#8212; Fabrication and Control of Actuation in Microscopic Scale

Here, we fabricate 3D polymeric micro/nano structures in which both the shape and the molecular alignment can be engineered with nanometer scale accuracy by the use of direct laser writing. Light induced deformation of several types of liquid crystalline elastomer microstructures can be controlled in the microscopic scale.

自由形式のライトアクチュエータ - 顕微鏡スケールでの作製と作動の制御

Liquid crystalline elastomers (LCEs) are smart materials capable of reversible shape-change in response to external stimuli, and have attracted ...

Fabrication and Characterization of Superconducting Resonators

Superconducting microwave resonators are of interest for a wide range of applications, including for their use as microwave kinetic inductance detectors (MKIDs) for the detection of faint astrophysical signatures, as well as for quantum computing applications and materials characterization. In this paper, procedures are presented for the fabrication and characterization of thin-film superconducting microwave resonators. The fabrication methodology allows for the realization of superconducting transmission-line resonators with features on both sides of an atomically smooth single-crystal silicon dielectric. This work describes the procedure for the installation of resonator devices into a cryogenic microwave testbed and for cool-down below the superconducting transition temperature. The set-up of the cryogenic microwave testbed allows one to do careful measurements of the complex microwave transmission of these resonator devices, enabling the extraction of the properties of the superconducting lines and dielectric substrate (e.g., internal quality factors, loss and kinetic inductance fractions), which are important for device design and performance.

Superconducting microwave resonators are of interest for detection of light, quantum computing applications and materials characterization. This work presents a detailed procedure for fabrication and characterization of superconducting microwave resonator scattering parameters.

超伝導共振器の作製と評価

Superconducting microwave resonators are of interest for a wide range of applications, including for their use as microwave kinetic inductance detectors ...

Fabrication of Nanopillar-Based Split Ring Resonators for Displacement Current Mediated Resonances in Terahertz Metamaterials

Terahertz (THz) split ring resonator (SRR) metamaterials (MMs) has been studied for gas, chemical, and biomolecular sensing applications because the SRR is not affected by environmental characteristics such as the temperature and pressure surrounding the resonator. Electromagnetic radiation in THz frequencies is biocompatible, which is a critical condition especially for the application of the biomolecular sensing. However, the quality factor (Q-factor) and frequency responses of traditional thin-film based split ring resonator (SRR) MMs are very low, which limits their sensitivities and selectivity as sensors. In this work, novel nanopillar-based SRR MMs, utilizing displacement current, are designed to enhance the Q-factor up to 450, which is around 45 times higher than that of traditional thin-film-based MMs. In addition to the enhanced Q-factor, the nanopillar-based MMs induce a larger frequency shifts (17 times compared to the shift obtained by the traditional thin-film based MMs). Because of the significantly enhanced Q-factors and frequency shifts as well as the property of biocompatible radiation, the THz nanopillar-based SRR are ideal MMs for the development of biomolecular sensors with high sensitivity and selectivity without inducing damage or distortion to biomaterials. A novel fabrication process has been demonstrated to build the nanopillar-based SRRs for displacement current mediated THz MMs. A two-step gold (Au) electroplating process and an atomic layer deposition (ALD) process are used to create sub-10 nm scale gaps between Au nanopillars. Since the ALD process is a conformal coating process, a uniform aluminum oxide (Al2O3) layer with nanometer-scale thickness can be achieved. By sequentially electroplating another Au thin film to fill the spaces between Al2O3 and Au, a close-packed Au-Al2O3-Au structure with nano-scale Al2O3 gaps can be fabricated. The size of the nano-gaps can be well defined by precisely controlling the deposition cycles of the ALD process, which has an accuracy of 0.1 nm.

A protocol for the design and fabrication of a novel nanopillar-based split ring resonator (SRR) is presented.

テラヘルツメタマテリアルにおける変位電流仲介共鳴のためのナノピラーベースのスプリットリング共振器の作製

Terahertz (THz) split ring resonator (SRR) metamaterials (MMs) has been studied for gas, chemical, and biomolecular sensing applications because the SRR ...

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Here, we demonstrate the advantages of the laser Doppler vibrometer (LDV) over conventional techniques (the network analyzer), as well as the techniques to create an application-based microelectromechanical systems (MEMS) filter and how to use it efficiently (i.e., tuning the tuning-capability and avoiding both failure and stiction). LDV enables crucial measurements that are impossible with the network analyzer, such as higher mode detection (highly sensitive biosensor application) and resonance measurement for very small devices (fast prototyping). Accordingly, LDV was used to characterize the frequency tuning range and resonance frequency at different modes of the MEMS filters built for this study. This wide range frequency tuning mechanism is based simply on Joule heating from the embedded heaters and relatively high thermal stress with respect to the temperature of a fixed-fixed beam. However, we demonstrate that another limitation of this method is the resulting high thermal stress, which can burn the devices. Further improvement was achieved and shown for the first time in this study, such that the tuning capability was increased by 32% through an increase in the applied DC bias voltage (25 V to 35 V) between the two adjacent beams. This important finding eliminates the need for the extra Joule heating at the wider frequency tuning range. Another possible failure is through stiction and requirement of structure optimization: We propose a simple and easy technique of low frequency square wave signal application that can successfully separate the beams and eliminates the need for the more sophisticated and complicated methods given in the literature. The above findings necessitate a design methodology, and so we also provide an application-based design.

A protocol for a fixed-fixed beam design using a laser Doppler vibrometer (LDV), including the measurement of frequency tuning, modification of tuning capability, and avoidance of device failure and stiction, is presented. The superiority of the LDV method over the network analyzer is demonstrated due to its higher mode capability.

デザインと効率的な広帯域波長可変 MEMS フィルター特性評価手法

Here, we demonstrate the advantages of the laser Doppler vibrometer (LDV) over conventional techniques (the network analyzer), as well as the techniques ...