この作品は、財政的に科学技術省と中国の共和国の国立科学評議会のサポートされていた（契約番号NSC 101から2221-E-027から042と101から2622 NSC-E-027から003-CC2）。 DH魏のおかげで博士Shechtman賞国立台北科技大学（台北TECH） 賞。

1。基板の準備とクリーニング<ol><li> Siの（100）ウエハから10ミリメートル×10ミリメートルのシリコン基板をカットします。 </li><li> 10ミリメートル×10ミリメートルのガラス基板をカットします。 </li><li> 15分間イソプロパノール次いで、10分間アセトンでシリコンとガラス基板を洗浄するために超音波洗浄器を使用して10分間アルコール、および。 </li><li>脱イオン（DI）水で3回の基板を洗浄します。 </li><li>ブロー乾燥窒素銃で基板を。 </li></ol> 2. DEZnを調製および保存注：また、DEZnを呼ばジエチル亜鉛（C 2 H 5）2 Znが、二つのエチル基に結合した亜鉛の中心から成る高度に発火性有機亜鉛化合物です。 DEZnをを使用しているとき人で作業しないでください。 DEZnを非常に毒性であり、酸素や水分に敏感であり、水の近くDEZnをを配置しないようにしてください。常に防護マスク、目の保護具を着用。すべての手順は、フード内で実行する必要があります。最も重要なのは、未使用のDEZnをaがb必要がありますeは5 O Cの環境下に保存されています。 注意：DEZnを最初に使用するために、手順2に従っていない場合は、ステップ3から実験を開始します。 <ol><li>ボトルから30ミリリットルDEZnをを引き出した後、鋼シリンダー内に置かビーカーに注入するために注射器を使用してください。 </li><li>反応室でボンベを接続するための亜鉛メッキ鉄パイプを使用してください。 </li><li> （6トール）真空環境における鋼製シリンダーをポンプダウンする機械式ポンプとボールバルブを使用してください。 注：DEZnを深刻な酸素と反応し、それが真空環境中に維持されなければなりません。 </li><li> 5°Cの環境で使用されていないDEZnを保管してください。 </li></ol> 3. PECVD室の準備とZnO薄膜の合成注：プラズマ化学気相成長法の概略図を図1に示されています。 <ol><li> 30ミリメートルで、シャワーヘッド電極と試料台との間の作動距離を設定します。 </li> &lt;DEZnを入口3からセンチの距離がある場合李は&gt;適切な場所に反応室の試料ステージに基板を配置します。 </li><li>ロータリーポンプを開いて、徐々にゲートバルブ、バタフライバルブを開きます。 </li><li>反応室の背景圧力は30ミリトールより低くなるまで待ちます。 </li><li>ゲートバルブ、バタフライバルブを閉じて、ロータリーポンプに接続します。 </li><li>その後、3×10 -6 Torrの高真空に到達するために、ターボポンプと相対ゲートバルブを開きます。 </li><li>必要な真空状態に達した後、熱コントローラを開き、（異なる実験パラメータ200、300、400、500、600 O C）合成温度に試料ステージを加熱します。 </li><li>温度と圧力が必要な状態に到達すると、ターボポンプを閉じ、同時にロータリーポンプに接続するゲートバルブやバタフライバルブを開きます。 </li><li>次に、ガス入口バルブを開き、アルゴングラムをオン同時にフローコントローラとして。 </li><li>チャンバ内にアルゴンガス（0.167ミリリットル/秒）で流れます。 </li><li> 500ミリトールのチャンバ圧力を設定します。 </li><li> RF（13.56MHzの）発電機とのマッチングネットワークをオンにし、その後、サンプルを15分間表面パージするため、100WのRFパワーを設定します。 </li><li>サンプルのパージを終えた後、70 WにダウンRF電力をオン</li><li>次に、二酸化炭素ガス制御装置及びガス入口バルブをオン。 </li><li>チャンバ内に二酸化炭素（0.5ミリリットル/秒）で流れます。 </li><li> 6トールで作動圧を設定します。 </li><li>チャンバ圧力は6トルに達した後、同時にDEZnをに接続されたチャンバと開放ボール弁にジエチル亜鉛（DEZnを）を搬送するためのキャリアガスとして高純アルゴン（0.167ミリリットル/秒）で流れます。同時に、ZnO膜の合成を開始します。 </li><li> 5分間のZnO膜のプラズマ合成を継続します。 </li><li> ZnO膜が合成された後、順次は、RF発生器、ボールバルブ、熱詐欺をオフにしますコントローラと、ガス入口弁と一緒にガス流量コントローラのすべて。 </li><li>試料ステージの温度が室温まで冷却すると、サンプルを取り出してください。注：冷却速度は約1.8 O℃/分です。 </li></ol>合成されたZnO薄膜上にインターデジット状パターンの4準備注：リソグラフィプロセスの概略を図3に示されています。 <ol><li> 10分間150°Cの時のように合成したZnOサンプルを焼くためにホットプレートを使用してください。 </li><li>スピンコーターの上にサンプルを配置し、その後のZnO試料に100μlのフォトレジストの溶液（S1813）を分注します。 </li><li> 10秒間800rpmでスピンコーターを実行してから、均一に薄膜を生成するために30秒間3000rpmでに加速します。 </li><li>ソフトベーク90秒間105 O CでフォトレジストでコーティングされたZnO系サンプル。 </li><li>ソフトベークした後、フォトレジストコーティングされたサンプルトゥルを露出させるためにUV光を使用しマスクアライナによりフォトマスクをGH。露光時間は2秒であり、電力は400 Wです。 注意：フォトマスクのパターンがある幅広の0.03ミリメートルと長い4ミリメートル（14ペア）および図2に示すように0.15ミリメートルの電極間の間隔を有し、互いにかみ合っ-などの設計されたそれは注目に値すること総感光面積は、検出器のための84.32ミリメートル2です。 </li><li>露光手順の後、ピンセットで試料をクリップし、その後希釈現像液に浸す35の開発のサンプルを取得するために左右に振る行動から（現像液の50 mlの脱イオン水150mlを混合）。 </li><li> DI水を用いて開発されたサンプルを洗浄し、窒素ガスで乾燥しました。 </li><li>無傷のパターンを確認するために、光学顕微鏡を使用してください。ない場合は、フォトレジストを除去するためにアセトンを使用し、完全なパターンが得られるまで繰り返して、4.7に4.2を繰り返します。 </li><li>ハード20分間120°Cのでサンプルを焼きます。 </li></ol><ol><li>化学リフトオフ手順に進む前に開発されたサンプルの上に薄い導電性のPt層（100 nm）を堆積させるために、RFマグネトロンスパッタ装置を使用してください。 </li><li> 13ミリメートルで、ターゲットと基板との間の距離を設定します。 </li><li> 5ミリトールの低真空に到達するために機械式ポンプを使用してください。 </li><li>その後、7×10 -7 Torrの高真空を得るために、ターボポンプを使用しています。 </li><li>チャンバーは高真空になるまで待って、ターボポンプを閉じて、その後、機械式ポンプを開きます。 </li><li>チャンバ圧力は、100ミリトールの作動圧力に達するまでMAS流量コントローラによってチャンバに0.3ミリリットル/秒でアルゴンガスを流します。 </li><li>電源を放電し、25分間試料上にPt薄膜電極をスパッタリングするために15 WのDC電力を設定直流（DC）電源をオンにします。 </li><li> Pt電極層は、マグネトロンsputtによって堆積された後方法をering、チャンバーから試料を取り出します。 </li><li>フォトレジストを除去するために超音波洗浄器による化学リフトオフアセトン液にサンプルを浸し。 </li><li>徹底的にフォトレジストを除去するために1分で洗浄時間を設定し、ZnO薄膜上に櫛型状のPt電極を得ます。 </li></ol> 6. RTA処理<ol><li> RTAシステムにとして製作のPt / ZnOのサンプルを置きます。 </li><li> 20ミリトールにRTAチャンバの圧力をポンプダウンする機械式ポンプとゲートバルブを使用してください。 </li><li>チャンバ圧力は20ミリトールに到達するまで、チャンバ内に0.3ミリリットル/秒でアルゴンガスを流入し、5トルの作動圧を設定待ちます。 </li><li>次に、100°C / minと加熱速度を設定します。 </li><li>その後、10分間450 O Cでサンプルをアニール。 </li><li>アニールした後、サンプルを室温に冷却するまで、サンプルを取り出して待ちます。 </li></ol>

<ol>
	<li>Choppali, U., Kougianos, E., Mohanty, S. P., Gorman, B. P. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Influence+of+annealing+on+polymeric+derived+ZnO+thin+films+on+sapphire.">Influence of annealing on polymeric derived ZnO thin films on sapphire.</a> Thin Solid Films. 545, 466-470 (2013).</li><li>Bedia, F. Z., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Effect+of+tin+doping+on+optical+properties+of+nanostructured+ZnO+thin+films+grown+by+spray+pyrolysis+technique.">Effect of tin doping on optical properties of nanostructured ZnO thin films grown by spray pyrolysis technique.</a> J. Alloy. Compd. 616, 312-318 (2014).</li><li>Liu, W. S., Wu, S. Y., Hung, C. Y., Tseng, C. H., Chang, Y. L. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Improving+the+optoelectronic+properties+of+gallium+ZnO+transparent+conductive+thin+films+through+titanium+doping.">Improving the optoelectronic properties of gallium ZnO transparent conductive thin films through titanium doping.</a> J. Alloy. Compd. 616, 268-274 (2014).</li><li>Baik, K. H., Kim, H., Kim, J., Jung, S., Jang, S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Nonpolar+light+emitting+diode+with+sharp+near-ultraviolet+emissions+using+hydrothermally+grown+ZnO+on+p-GaN.">Nonpolar light emitting diode with sharp near-ultraviolet emissions using hydrothermally grown ZnO on p-GaN.</a> Appl. Phys. Lett. 103, 091107 (2013).</li><li>Han, S. J., Huang, W., Shi, W., Yu, J. S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Performance+improvement+of+organic+field-effect+transistor+ammonia+gas+sensor+using+ZnO/PMMA+hybrid+as+dielectric+layer.">Performance improvement of organic field-effect transistor ammonia gas sensor using ZnO/PMMA hybrid as dielectric layer.</a> Sens Actuator B-Chem. 203, 9-16 (2014).</li><li>Chizhov, A. S., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Visible+light+activated+room+temperature+gas+sensors+based+on+nanocrystalline+ZnO+sensitized+with+CdSe+quantum+dots.">Visible light activated room temperature gas sensors based on nanocrystalline ZnO sensitized with CdSe quantum dots.</a> Sens Actuator B-Chem. 205, 305-312 (2014).</li><li>Li, C., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Effects+of+substrate+on+the+structural,+electric+and+optical+properties+of+Al-doped+ZnO+films+prepared+by+radio+frequency+magnetron+sputtering.">Effects of substrate on the structural, electric and optical properties of Al-doped ZnO films prepared by radio frequency magnetron sputtering.</a> Thin Solid Films. 517, 3265-3268 (2009).</li><li>Ellmer, K. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Resistivity+of+polycrystalline+zinc+oxide+films:+current+status+and+physical+limit.">Resistivity of polycrystalline zinc oxide films: current status and physical limit.</a> J. Phys. D: Appl. Phys. 34, 3097 (2001).</li><li>Wang, F. G., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=optical+and+electrical+properties+of+Hf-doped+ZnO+transparent+conducting+films+prepared+by+sol-gel+method.">optical and electrical properties of Hf-doped ZnO transparent conducting films prepared by sol-gel method.</a> J. Alloy. Compd. 623, 290-297 (2015).</li><li>Senay, V., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=ZnO+thin+film+synthesis+by+reactive+radio+frequency+magnetron+sputtering.">ZnO thin film synthesis by reactive radio frequency magnetron sputtering.</a> Appl. Surf. Sci. 318, 2-5 (2014).</li><li>Chi, P. W., Su, C. W., Jhuo, B. H., Wei, D. H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Photoirradiation+caused+controllable+wettability+switching+of+sputtered+highly+aligned+c-axis-oriented+zinc+oxide+columnar+films.">Photoirradiation caused controllable wettability switching of sputtered highly aligned c-axis-oriented zinc oxide columnar films.</a> Int. J. Photoenergy. 2014, 765209 (2014).</li><li>Jamal, R. K., Hameed, M. A., Adem, K. A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Optical+properties+of+nanostructured+ZnO+prepared+by+a+pulsed+laser+deposition+technique.">Optical properties of nanostructured ZnO prepared by a pulsed laser deposition technique.</a> Mater. Lett. 132, 31-33 (2014).</li><li>Kobayashi, T., Nakada, T. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Effects+of+post-deposition+on+transparent+conductingZnO:B+thin+films+grown+by+MOCVD.">Effects of post-deposition on transparent conductingZnO:B thin films grown by MOCVD.</a> Jpn. J. Appl. Phys. 53, 05FA03 (2014).</li><li>Chao, C. H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Postannealing+effect+at+various+gas+ambients+on+ohmic+contacts+of+Pt/ZnO+nanobilayers+toward+ultraviolet+photodetectors.">Postannealing effect at various gas ambients on ohmic contacts of Pt/ZnO nanobilayers toward ultraviolet photodetectors.</a> Int. J. Photoenergy. 2013, 372869-1155 (2013).</li><li>Barankin, M. D., Gonzalez II, E., Ladwig, A. M., Hicks, R. F. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Plasma-enhanced+chemical+vapor+deposition+of+zinc+oxide+at+atmospheric+pressure+and+low+temperature.">Plasma-enhanced chemical vapor deposition of zinc oxide at atmospheric pressure and low temperature.</a> 91, 924-930 (2007).</li><li>Fons, P., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Uniaxial+locked+epitaxy+of+ZnO+on+the+&#945;+face+of+sapphire.">Uniaxial locked epitaxy of ZnO on the &#945; face of sapphire.</a> Appl. Phys. Lett. 77, 1801 (2000).</li><li>Ko, H. J., Chen, Y., Hong, S. K., Yao, T. a. k. a. f. u. m. i. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=MBE+growth+of+high-quality+ZnO+films+on+epi-GaN.">MBE growth of high-quality ZnO films on epi-GaN.</a> J. Cryst. Growth. 209, 816-821 (2000).</li><li>Park, D. J., Lee, J. Y., Park, T. E., Kim, Y. Y., Cho, H. K. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Improved+microstructural+properties+of+a+ZnO+thin+film+using+a+buffer+layer+in-situ+annealed+in+argon+ambient.">Improved microstructural properties of a ZnO thin film using a buffer layer in-situ annealed in argon ambient.</a> Thin Solid Films. 515, 6721-6725 (2000).</li><li>Kim, M. S., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Nitrogen-passivation+effects+of+Si+substrates+on+the+properties+of+ZnO+epitaxial+layers+grown+by+using+plasma-assisted+molecular+beam+epitaxy.">Nitrogen-passivation effects of Si substrates on the properties of ZnO epitaxial layers grown by using plasma-assisted molecular beam epitaxy.</a> J. Korean Phys. Soc. 56, 827-831 (2010).</li><li>Li, G. M., Zhang, J. W., Hou, X. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Temperature+dependence+of+performance+of+ZnO-based+metal-semiconductor-metal+ultraviolet+photodetectors.">Temperature dependence of performance of ZnO-based metal-semiconductor-metal ultraviolet photodetectors.</a> Sens. Actuator A-Phys. 209, 149-153 (2014).</li><li>Wang, X. F., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=superhigh+gain+visible-blind+UV+detector+and+optical+logic+gates+based+on+nonpolar+a-axial+GaN+nanowire.">superhigh gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire.</a> Nanoscale. 6, 12009-12017 (2014).</li><li>Inamdar, S. I., Rajpure, K. Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High-performance+metal-semiconductor-metal+UV+photodetector+based+on+spray+deposited+ZnO+thin+films.">High-performance metal-semiconductor-metal UV photodetector based on spray deposited ZnO thin films.</a> J. Alloy. Compd. 595, 55-59 (2014).</li><li>Tian, C. G., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Effects+of+continuous+annealing+on+the+performance+of+ZnO+based+metal-semiconductor-metal+ultraviolet+photodetectors.">Effects of continuous annealing on the performance of ZnO based metal-semiconductor-metal ultraviolet photodetectors.</a> Mater. Sci. Eng. B-Adv. Funct.Solid-State Mater. 184, 67-71 (2014).</li><li>Chen, H. Y., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Realization+of+a+self-powered+ZnO+MSM+UV+photodetector+with+high+responsivity+using+an+asymmetric+pair+of+Au+electrodes.">Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes.</a> J. Mater. Chem. C. 2, 9689-9694 (2014).</li><li>Subramanyam, T. K., Srinivasulu Naidu, ., S, S., Uthanna, <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Effect+of+substrate+temperature+on+the+physical+properties+of+DC+reactive+magnetron+sputtered+ZnO+films.">Effect of substrate temperature on the physical properties of DC reactive magnetron sputtered ZnO films.</a> Opt. Mater. 13, 239-247 (1999).</li><li>Iwanaga, H., Kunishige, A., Takeuchi, S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Anisotropic+thermal+expansion+in+wurtzite-type+crystals.">Anisotropic thermal expansion in wurtzite-type crystals.</a> J. Mater. Sci. 35, 2451-2454 (2000).</li><li>Okaji, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Absolute+thermal+expansion+measurements+of+single-crystal+silicon+in+the+range+300-1300+K+with+an+interferometric+dilatometer.">Absolute thermal expansion measurements of single-crystal silicon in the range 300-1300 K with an interferometric dilatometer.</a> Int. J. Thermophys. 9, 1101-1109 (1988).</li><li>Pearse, R. W. B., Lichtenberg, A. J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> The identification of molecular spectra. , (1976).</li><li>Chao, C. H., Wei, D. H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Growth+of+non-polar+ZnO+thin+films+with+different+working+pressures+by+plasma+enhanced+chemical+vapor+deposition.">Growth of non-polar ZnO thin films with different working pressures by plasma enhanced chemical vapor deposition.</a> Jpn. J. Appl. Phys. 53, 11RA05 (2014).</li><li>Lin, B., Fu, Z., Green Jia, Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=luminescent+center+in+undoped+zinc+oxide+films+deposited+on+silicon+substrate.">luminescent center in undoped zinc oxide films deposited on silicon substrate.</a> Appl. Phys. Lett. 79, 943-945 (2001).</li><li>Koida, T., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Radiative+and+nonradiative+excitonic+transitions+in+nonpolar+(110)+and+polar+(000)+and+(0001)+ZnO+epilayers.">Radiative and nonradiative excitonic transitions in nonpolar (110) and polar (000) and (0001) ZnO epilayers.</a> Appl. Phys. Lett. 84 (110), 1079 (2004).</li></ol>

The authors declare that they have no competing financial interests.

重要なステップや修正ステップ1では、基板は完全に洗浄し、1.3〜1.5は、基板にはグリースや有機及び無機の汚染がないことを確認するために、続いて、ステップする必要があります。基板表面上の油脂、又は有機及び無機の汚染を大幅に膜の密着性が低下します。 ステップ2は、ZnO膜の製造工程の前に最も重要な手順です。 DEZnを、非常に毒性があり...

ZnOのは、そのようなRTと大きな励起子で高い化学的安定性、低コスト、非毒性、光ポンピングのための低電力しきい値、広い直接バンドギャップ（3.37 eV）でなど、そのユニークな特性のために有望なワイドバンドギャップ機能半導体材料であります〜60 meVで1-2の結合エネルギー。近年、酸化亜鉛薄膜は、透明導電性酸化物（TCO）フィルム、青色発光素子、電界効果トランジスタ、及びガスセンサ3-6を含む多くの応用分野において使用されています。その一方で、ZnOは、インジウムとスズの希少かつ高価であるために、インジウムスズ酸化物（ITO）を置換する候補物質です。さらに、ZnOは、可視波長領域とITO膜7-8と比べて低抵抗で高い光透過率を有しています。したがって、ZnOを製造、特性評価およびアプリケーションは広く報告されています。この本研究では、簡単なANにより高い C -軸（0002）のZnO薄膜を合成することに焦点を当てて効果的方法とUV光検出器に向けて実用化dは。 最近の研究レポートの所見は、高品質のZnO薄膜は、ゾル-ゲル法、高周波マグネトロンスパッタリング、有機金属化学気相成長（MOCVD）などの様々な技術によって、など9-14で合成することができることを示しています。それぞれの技術は、その利点と欠点があります。例えば、スパッタ成膜の主な利点は、非常に高い融点を有するそのターゲット材料が楽基板上にスパッタリングされています。対照的に、スパッタリング法は、フィルムを構成するためのリフトオフと結合することは困難です。我々の研究では、プラズマ強化化学蒸着（PECVD）システムは、高品質のC -軸のZnO薄膜を合成するために使用しました。プラズマ衝撃は、薄膜の密度を増加させ、イオンの分解反応速度を高めることができる15の合成工程における重要な要因です。におけるまた、高い成長速度および大面積の均一な堆積は、PECVD法のための他の特徴的な利点です。 合成技術を除いて、基板上の良好な接着性は、別の問題であると認めて。 ZnOとサファイアは同じ六方格子構造を有しているので、多くの研究では、Cの -planeサファイアが広く高 Cγ軸のZnO薄膜を合成するための基質として使用されてきました。しかし、酸化亜鉛は、粗い表面形態及び面内方向16に配向したZnO と C -planeサファイア（18％）の間の大きな格子ミスフィットに起因する高い残留（欠陥に関連する）のキャリア濃度を示すサファイア基板上に合成しました。サファイア基板に比べて、Siウエハは、ZnOの合成のための他の広く使用されている基板です。 Siウエハが広く、半導体産業で使用されてきました。したがって、Si基板上に高品質のZnO薄膜の成長は非常に重要であるとnecesSARY。残念なことに、ZnOとSiの結晶構造および熱膨張係数は、結晶品質の劣化につながる明らかに異なっています。過去10年間、多大な努力は、ZnOバッファ層17、種々のガス雰囲気18中のアニーリング、及びSi基板の表面19の不動態化を含む様々な方法を用いて、Si基板上へのZnO薄膜の品質を改善するためになされています。本研究は、成功した任意のバッファ層または前処理することなく、Si基板上に高 C -軸ZnO薄膜を合成するための簡単かつ効果的方法を提供します。実験結果は、最適な成長温度の下で合成されたZnO薄膜は良好な結晶および光学的特性を示したことが示されました。結晶構造、RFプラズマ組成、表面形態、及びZnO薄膜の光学特性は、X線回折（XRD）、光学発光分光法（OES）、電界放出SCにより調べましたそれぞれの電子顕微鏡（FE-SEM）、及びRTのフォトルミネッセンス（PL）スペクトルをアニング。また、酸化亜鉛薄膜の透過率も確認及び報告されました。 合成されたZnO薄膜は、UV光検出器用途のための感知層はまた、本研究で検討したように機能しました。 UV光検出器は、UV監視、光スイッチ、火炎警報、およびミサイル加温システム20-21に大きな潜在的な用途があります。このようなオーミックコンタクトとショットキーコンタクトを含む正の固有負（PIN）モードおよび金属 - 半導体 - 金属（MSM）構造として実施された光検出器の多くの種類があります。各タイプは、それ自身の利点と欠点を有します。現在、MSM光検出器構造は、その優れた応答性、信頼性、応答性能と回復時間22〜24に集中的な関心を集めています。ここに示す結果はMSMオーミック接触モードを使用したことを示していますZnO薄膜ベースのUV光検出器を作製しました。光検出器のような種類は、典型的には、 高い Cγ軸ZnO薄膜は、UV光検出器に適した検出層であることを示し、良好な応答性と信頼性を明らかにする。

<table border="0" cellpadding="0" cellspacing="0">
	<tbody>
		<tr>
			<td>RF power supply</td>
			<td>ADVANCED ENERGY</td>
			<td>RFX-600</td>
			<td></td>
		</tr>
		<tr>
			<td>Butterfly valve</td>
			<td>MKS</td>
			<td>253B-1-40-1</td>
			<td></td>
		</tr>
		<tr>
			<td>Mass flow conctroller</td>
			<td>PROTEC INSTRUMENTS</td>
			<td>PC-540</td>
			<td></td>
		</tr>
		<tr>
			<td>Pressure conctroller</td>
			<td>MKS</td>
			<td>600 series&#160;</td>
			<td></td>
		</tr>
		<tr>
			<td>Heater</td>
			<td>UPGRADE INSTRUMENT CO.</td>
			<td>UI-TC 3001</td>
			<td></td>
		</tr>
		<tr>
			<td>Sputter gun</td>
			<td>AJA INTERNATIONAL</td>
			<td>A320-HA</td>
			<td></td>
		</tr>
		<tr>
			<td>DEZn 1.5M</td>
			<td>ACROS ORGANIC USA, New Jersey</td>
			<td></td>
			<td>also called Diethylzinc (C2H5)2Zn</td>
		</tr>
		<tr>
			<td>Spin coater&#160;</td>
			<td>SWIENCO</td>
			<td>PW - 490</td>
			<td></td>
		</tr>
		<tr>
			<td>I-V measurement</td>
			<td>Keithley</td>
			<td>Model: 2400</td>
			<td></td>
		</tr>
		<tr>
			<td>Photocondutive measurement&#160;</td>
			<td>Home-built</td>
			<td></td>
			<td></td>
		</tr>
		<tr>
			<td>UV light sourse</td>
			<td>Panasonic</td>
			<td>ANUJ 6160</td>
			<td></td>
		</tr>
		<tr>
			<td>Mask aligner</td>
			<td>Karl Suss</td>
			<td>MJB4</td>
			<td></td>
		</tr>
		<tr>
			<td>Photoresist</td>
			<td>Shipley a Rohm &#38; Haas company</td>
			<td>S1813</td>
			<td></td>
		</tr>
		<tr>
			<td>Developer</td>
			<td>Shipley a Rohm &#38; Haas company</td>
			<td>MF319</td>
			<td></td>
		</tr>
		<tr>
			<td>Silicon wafer</td>
			<td>E-Light Technology Inc</td>
			<td>12/0801</td>
			<td></td>
		</tr>
		<tr>
			<td>Glass substrate</td>
			<td>CORNING</td>
			<td>1737</td>
			<td>P-type / Boron</td>
		</tr>
	</tbody>
</table>

synthesis and characterization of high c-axis zno thin film by plasma enhanced chemical vapor deposition system and its uv photodetector application

本研究では、 高 Cγ軸（0002）優先配向した酸化亜鉛（ZnO）薄膜を正常かつ効率的にプラズマ化学気相堆積（PECVD）システムを用いて、異なる合成温度を介してシリコン（Si）基板上に合成されています。異なる合成結晶構造上の温度、表面形態および光学的特性の影響が検討されています。 X線回折（XRD）パターンは（0002）回折ピークの強度は400 O C.まで増大合成温度に強くなったことを示し（0002）の回折強度ピークが徐々に（10-10）の出現に伴って弱くなった400 O Cの過剰に合成された温度上昇などの回折ピークRTのフォトルミネッセンス（PL）スペクトルは、強い近接バンド端の周りに375 nmで観察した（NBE）排出し、約575 nmのウントに位置無視できる深いレベル（DL）の発光を示しましたER 高 C -軸のZnO薄膜。電界放出走査電子顕微鏡（FE-SEM）画像は、均一な表面を明らかにし、小さな粒子サイズ分布を有します。 ZnOの薄膜はまた、透過率を測定するために同じパラメータの下でガラス基板上に合成されています。 紫外線（UV）光検出器用途のために、櫛型白金（Pt）薄膜（厚さ約100 nm）は、従来の光リソグラフィプロセスを介して製造され、無線周波数（RF）マグネトロンスパッタリング。オーム接触を達成するために、デバイスは、10分間の急速熱アニーリング（RTA）システム450によって、O℃でアルゴン状況でアニールしました。体系的な測定の後に、電流-電圧（I - V）写真、暗電流の曲線および時間依存性の光電流応答の結果は、高Cγ軸ZnO薄膜は、適切な感知層であることを示し、良好な応答性と信頼性を示しました紫外線光検出器アプリケーション用。

高いcは a軸配向性を有する酸化亜鉛（0002）薄膜が正常PECVD装置を用いてSi基板上に合成されています。二酸化炭素（CO 2）及びジエチル亜鉛（DEZnを）は、それぞれ、酸素や亜鉛の前駆体として使用しました。酸化亜鉛薄膜の結晶構造は、ZnO薄膜が最も強い（0002）回折ピーク400 O Cで合成したことを示す、X線回折（図4）によって特徴付けました。合成温度は50...

Watch this Scientific Journal Video about Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application at JoVE.c

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

We offered a method to directly synthesize high c-axis (0002) ZnO thin film by plasma enhanced chemical vapor deposition. The as-synthesized ZnO thin film combined with Pt interdigitated electrode was used as sensing layer for ultraviolet photodetector, showing a high performance through a combination of its good responsivity and reliability.

プラズマによる高c軸ZnO薄膜の合成とキャラクタリゼーションは、化学気相堆積システムとそのUV光検出器アプリケーションを強化しました

In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto ...

synthesis-characterization-high-c-axis-zno-thin-film-plasma-enhanced

Research

JoVE Journal

Engineering

15.1K ビュー.  National Taipei University of Technology (TAIPEI TECH). We offered a method to directly synthesize high c-axis (0002) ZnO thin film by plasma enhanced chemical vapor deposition. The as-synthesized ZnO thin film combined with Pt interdigitated electrode was used as sensing layer for ultraviolet photodetector, showing a high performance through a combination of its good responsivity and reliability.

ビデオ: Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach.
The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles.
To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 &mu;m thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint.
To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23&deg;C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing conditions. An optimised nanoparticle array alone results in cell Jsc enhancement of about 28%, similar to the effect of the diffuse reflector. The photocurrent can be further increased by coating the nanoparticles by a low refractive index dielectric, like MgF2, and applying the diffused reflector. The complete plasmonic cell structure comprises the polycrystalline silicon film, a silver nanoparticle array, a layer of MgF2, and a diffuse reflector. The Jsc for such cell is 21-23 mA/cm2, up to 45% higher than Jsc of the original cell without light-trapping or ~25% higher than Jsc for the cell with the diffuse reflector only.
Introduction
Light-trapping in silicon solar cells is commonly achieved via light scattering at textured interfaces. Scattered light travels through a cell at oblique angles for a longer distance and when such angles exceed the critical angle at the cell interfaces the light is permanently trapped in the cell by total internal reflection (Animation 1: Light-trapping). Although this scheme works well for most solar cells, there are developing technologies where ultra-thin Si layers are produced planar (e.g. layer-transfer technologies and epitaxial c-Si layers) 1 and or when such layers are not compatible with textures substrates (e.g. evaporated silicon) 2. For such originally planar Si layer alternative light trapping approaches, such as diffuse white paint reflector 3, silicon plasma texturing 4 or high refractive index nanoparticle reflector 5 have been suggested.
Metal nanoparticles can effectively scatter incident light into a higher refractive index material, like silicon, due to the surface plasmon resonance effect 6. They also can be easily formed on the planar silicon cell surface thus offering a light-trapping approach alternative to texturing. For a nanoparticle located at the air-silicon interface the scattered light fraction coupled into silicon exceeds 95% and a large faction of that light is scattered at angles above critical providing nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment 6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested 8. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles 9. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance 10.
The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing through the nanoparticle array on re-entering the cell and the reflector itself can be made diffuse - both effects further facilitating light scattering and hence light-trapping. Importantly, the Ag nanoparticles have to be encapsulated with an inert and low refractive index dielectric, like MgF2 or SiO2, from the rear reflector to avoid mechanical and chemical damage 7. Low refractive index for this cladding layer is required to maintain a high coupling fraction into silicon and larger scattering angles, which are ensured by the high optical contrast between the media on both sides of the nanoparticle, silicon and dielectric 6. The photocurrent of the plasmonic cell with the diffuse rear reflector can be up to 45% higher than the current of the original cell or up to 25% higher than the current of an equivalent cell with the diffuse reflector only.

Polycrystalline silicon thin-film solar cells on glass are fabricated by deposition of boron and phosphorous doped silicon layers followed by crystallisation, defect passivation and metallisation. Plasmonic light-trapping is introduced by forming Ag nanoparticles on the silicon cell surface capped with a diffused reflector resulting in ~45% photocurrent enhancement.

プラズモニック·強化されたライトトラップによる多結晶シリコン薄膜太陽電池

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To ...

工学

Encapsulation and Permeability Characteristics of Plasma Polymerized Hollow Particles

In this protocol, core-shell nanostructures are synthesized by plasma enhanced chemical vapor deposition. We produce an amorphous barrier by plasma polymerization of isopropanol on various solid substrates, including silica and potassium chloride. This versatile technique is used to treat nanoparticles and nanopowders with sizes ranging from 37 nm to 1 micron, by depositing films whose thickness can be anywhere from 1 nm to upwards of 100 nm. Dissolution of the core allows us to study the rate of permeation through the film. In these experiments, we determine the diffusion coefficient of KCl through the barrier film by coating KCL nanocrystals and subsequently monitoring the ionic conductivity of the coated particles suspended in water. The primary interest in this process is the encapsulation and delayed release of solutes. The thickness of the shell is one of the independent variables by which we control the rate of release. It has a strong effect on the rate of release, which increases from a six-hour release (shell thickness is 20 nm) to a long-term release over 30 days (shell thickness is 95 nm). The release profile shows a characteristic behavior: a fast release (35% of the final materials) during the first five minutes after the beginning of the dissolution, and a slower release till all of the core materials come out.

We have used plasma enhanced chemical vapor deposition to deposit thin films ranging from a few nm to several 100 nm on nano-sized particles of various materials. We subsequently etch the core material to produce hollow nanoshells whose permeability is controlled by the thickness of the shell. We characterize the permeability of these coatings to small solutes and demonstrate that these barriers can provide sustained release of the core material over several days.

プラズマ重合中空粒子のカプセル化と透水特性

In this protocol, core-shell nanostructures are synthesized by plasma enhanced chemical vapor deposition. We produce an amorphous barrier by plasma ...

Nanomoulding of Functional Materials, a Versatile Complementary Pattern Replication Method to Nanoimprinting

We describe a nanomoulding technique which allows low-cost nanoscale patterning of functional materials, materials stacks and full devices. Nanomoulding combined with layer transfer enables the replication of arbitrary surface patterns from a master structure onto the functional material. Nanomoulding can be performed on any nanoimprinting setup and can be applied to a wide range of materials and deposition processes. In particular we demonstrate the fabrication of patterned transparent zinc oxide electrodes for light trapping applications in solar cells.

We describe a nanomoulding technique which allows low-cost nanoscale patterning of functional materials, materials stacks and full devices. Nanomoulding can be performed on any nanoimprinting setup and can be applied to a wide range of materials and deposition processes.

機能材料のNanomoulding、ナノインプリントへ多目的相補パターンレプリケーション方法

We describe a nanomoulding technique which  allows low-cost nanoscale patterning of functional materials, materials stacks  and full devices. Nanomoulding ...

Synthesis and Microdiffraction at Extreme Pressures and Temperatures

High pressure compounds and polymorphs are investigated for a broad range of purposes such as determine structures and processes of deep planetary interiors, design materials with novel properties, understand the mechanical behavior of materials exposed to very high stresses as in explosions or impacts. Synthesis and structural analysis of materials at extreme conditions of pressure and temperature entails remarkable technical challenges. In the laser heated diamond anvil cell (LH-DAC), very high pressure is generated between the tips of two opposing diamond anvils forced against each other; focused infrared laser beams, shined through the diamonds, allow to reach very high temperatures on samples absorbing the laser radiation. When the LH-DAC is installed in a synchrotron beamline that provides extremely brilliant x-ray radiation, the structure of materials under extreme conditions can be probed in situ. LH-DAC samples, although very small, can show highly variable grain size, phase and chemical composition. In order to obtain the high resolution structural analysis and the most comprehensive characterization of a sample, we collect diffraction data in 2D grids and combine powder, single crystal and multigrain diffraction techniques. Representative results obtained in the synthesis of a new iron oxide, Fe4O5 1 will be shown.

The laser heated diamond anvil cell combined with synchrotron micro-diffraction techniques allows researchers to explore the nature and properties of new phases of matter at extreme pressure and temperature (PT) conditions. Heterogeneous samples can be characterized in situ under high pressure by 2D mapping and combined powder, single-crystal and multigrain diffraction approaches.

エクストリーム圧力と温度での合成とMicrodiffraction

High pressure compounds and polymorphs are investigated for a broad range of purposes such as determine structures and processes of deep planetary ...

Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent thermal evaporation, and it absorbs visible light strongly. However, for a long time the record power conversion efficiency of SnS solar cells remained below 2%. Recently we demonstrated new certified record efficiencies of 4.36% using SnS deposited by atomic layer deposition, and 3.88% using thermal evaporation. Here the fabrication procedure for these record solar cells is described, and the statistical distribution of the fabrication process is reported. The standard deviation of efficiency measured on a single substrate is typically over 0.5%. All steps including substrate selection and cleaning, Mo sputtering for the rear contact (cathode), SnS deposition, annealing, surface passivation, Zn(O,S) buffer layer selection and deposition, transparent conductor (anode) deposition, and metallization are described. On each substrate we fabricate 11 individual devices, each with active area 0.25 cm2. Further, a system for high throughput measurements of current-voltage curves under simulated solar light, and external quantum efficiency measurement with variable light bias is described. With this system we are able to measure full data sets on all 11 devices in an automated manner and in minimal time. These results illustrate the value of studying large sample sets, rather than focusing narrowly on the highest performing devices. Large data sets help us to distinguish and remedy individual loss mechanisms affecting our devices.

Tin sulfide (SnS) is a candidate material for Earth-abundant, non-toxic solar cells. Here, we demonstrate the fabrication procedure of the SnS solar cells employing atomic layer deposition, which yields 4.36% certified power conversion efficiency, and thermal evaporation which yields 3.88%.

熱蒸着および原子層堆積法によって記録し、効率のSnS太陽電池を作ります

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent ...

Preparation of ZnO Nanorod/Graphene/ZnO Nanorod Epitaxial Double Heterostructure for Piezoelectrical Nanogenerator by Using Preheating Hydrothermal

Well-aligned ZnO nanostructures have been intensively studied over the last decade for remarkable physical properties and enormous applications. Here, we describe a one-step fabrication technique to synthesis freestanding ZnO nanorod/graphene/ZnO nanorod double heterostructure. The preparation of the double heterostructure is performed by using thermal chemical vapor deposition (CVD) and preheating hydrothermal technique. In addition, the morphological properties were characterized by using the scanning electron microscopy (SEM). The utility of freestanding double heterostructure is demonstrated by fabricating the piezoelectric nanogenerator. The electrical output is improved up to 200% compared to that of a single heterostructure owing to the coupling effect of the piezoelectricity between the arrays of ZnO nanorods on the top and bottom of graphene. This unique double heterostructure have a tremendous potential for applications of electrical and optoelectrical devices where the high number density and specific surface area of nanorod are needed, such as pressure sensor, immuno-biosensor and dye-sensitized solar cells.

One-step fabrication method for obtaining freestanding epitaxial double heterostructure is presented. This approach could achieve ZnO coverage with a higher number density than that of the epitaxial single heterostructure, leading to a piezoelectric nanogenerator with an increased output electrical performance.

予熱水熱を利用したピエゾ電気NanogeneratorためのZnOナノロッド/グラフェン/ ZnOのナノロッドエピタキシャルダブルヘテロ構造の作製

Well-aligned ZnO nanostructures have been intensively studied over the last decade for remarkable physical properties and enormous applications. Here, we ...

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for Cu(In,Ga)Se2 Solar Cells

The levelized cost of electricity (LCOE) of photovoltaic (PV) systems is determined by, among other factors, the PV module reliability. Better prediction of degradation mechanisms and prevention of module field failure can consequently decrease investment risks as well as increase the electricity yield. An improved knowledge level can for these reasons significantly decrease the total costs of PV electricity. 
In order to better understand and minimize the degradation of PV modules, the occurring degradation mechanisms and conditions should be identified. This should preferably happen under combined stresses, since modules in the field are also simultaneously exposed to multiple stress factors. Therefore, two 'Combined Stress test with in situ measurement' setups have been designed and constructed. These setups allow the simultaneous use of humidity, temperature, illumination, and electrical biases as independently controlled stress factors on solar cells and minimodules. The setups also allow real-time monitoring of the electrical properties of these samples. This protocol presents these setups and describes the experimental possibilities. Moreover, results obtained with these setups are also presented: various examples about the influence of both deposition and degradation conditions on the stability of thin film Cu(In,Ga)Se2 (CIGS) as well as Cu2ZnSnSe4 (CZTS) solar cells are described. Results on the temperature dependency of CIGS solar cells are also presented.

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for CuIn,GaSe2 Solar Cells

Two &#39;Combined Stress test with in situ measurement&#39; setups, which allow real-time monitoring of accelerated degradation of solar cells and modules, were designed and constructed. These setups allow the simultaneous use of humidity, temperature, electrical biases, and illumination as independently controlled stress factors. The setups and various experiments executed are presented.

その場で太陽電池とモジュールの加速劣化のモニタリング: Cu (In, Ga) Se2太陽電池に関するケーススタディ

The levelized cost of electricity (LCOE) of photovoltaic (PV) systems is determined by, among other factors, the PV module reliability. Better prediction ...

Well-aligned Vertically Oriented ZnO Nanorod Arrays and their Application in Inverted Small Molecule Solar Cells

This manuscript describes how to design and fabricate efficient inverted solar cells, which are based on a two-dimensional conjugated small molecule (SMPV1) and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM), by utilizing ZnO nanorods (NRs) grown on a high quality Al-doped ZnO (AZO) seed layer. The inverted SMPV1:PC71BM solar cells with ZnO NRs that grew on both a sputtered and sol-gel processed AZO seed layer are fabricated. Compared with the AZO thin film prepared by the sol-gel method, the sputtered AZO thin film exhibits better crystallization and lower surface roughness, according to X-ray diffraction (XRD) and atomic force microscope (AFM) measurements. The orientation of the ZnO NRs grown on a sputtered AZO seed layer shows better vertical alignment, which is beneficial for the deposition of the subsequent active layer, forming better surface morphologies. Generally, the surface morphology of the active layer mainly dominates the fill factor (FF) of the devices. Consequently, the well-aligned ZnO NRs can be used to improve the carrier collection of the active layer and to increase the FF of the solar cells. Moreover, as an anti-reflection structure, it can also be utilized to enhance the light harvesting of the absorption layer, with the power conversion efficiency (PCE) of solar cells reaching 6.01%, higher than the sol-gel based solar cells with an efficiency of 4.74%.

This manuscript describes how to design and fabricate efficient inverted SMPV1:PC71BM solar cells with ZnO nanorods (NRs) grown on a high quality Al-doped ZnO (AZO) seed layer. The well-aligned vertically oriented ZnO NRs exhibit high crystalline properties. The power conversion efficiency of solar cells can reach 6.01%.

整列垂直方向に配向 ZnO ナノロッド配列と反転小さな分子の太陽電池の応用

This manuscript describes how to design and fabricate efficient inverted solar cells, which are based on a two-dimensional conjugated small molecule ...

Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.&#160; We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.&#160; Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

We present a detailed method for fabricating ultra-thin color films with improved characteristics for optical coatings. The oblique angle deposition technique using an electron beam evaporator allows improved color tunability and purity. Fabricated films of Ge and Au on Si substrates were analyzed by reflectance measurements and color information conversion.

斜め蒸着を使用してメディアを高吸収極薄カラー フィルムの作製

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.&#160; We present ...

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Here, we present a procedure for the synthesis of bulk and thin film multicomponent (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (Co variant) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (Cu variant) entropy-stabilized oxides. Phase pure and chemically homogeneous (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (x = 0.20, 0.27, 0.33) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (x = 0.11, 0.27) ceramic pellets are synthesized and used in the deposition of ultra-high quality, phase pure, single crystalline thin films of the target stoichiometry. A detailed methodology for the deposition of smooth, chemically homogeneous, entropy-stabilized oxide thin films by pulsed laser deposition on (001)-oriented MgO substrates is described. The phase and crystallinity of bulk and thin film materials are confirmed using X-ray diffraction. Composition and chemical homogeneity are confirmed by X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy. The surface topography of thin films is measured with scanning probe microscopy. The synthesis of high quality, single crystalline, entropy-stabilized oxide thin films enables the study of interface, size, strain, and disorder effects on the properties in this new class of highly disordered oxide materials.

The synthesis of high quality bulk and thin film (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O entropy-stabilized oxides is presented.

バルクと組成バリエーション エントロピー安定化酸化物薄膜合成

Here, we present a procedure for the synthesis of bulk and thin film multicomponent (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (Co variant) and ...