Electrospray Deposition of Uniform Thickness Ge₂₃Sb₇S₇₀ and As₄₀S₆₀ Chalcogenide Glass Films

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08:38 min

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August 19th, 2016

DOI :

10.3791/54379-v

August 19th, 2016

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Spencer Novak¹, Pao-Tai Lin²^,³, Cheng Li⁴, Nikolay Borodinov¹, Zhaohong Han⁵, Corentin Monmeyran⁵, Neil Patel⁵, Qingyang Du⁵, Marcin Malinowski⁴, Sasan Fathpour⁴, Chatdanai Lumdee⁴, Chi Xu⁴, Pieter G. Kik⁴, Weiwei Deng⁶, Juejun Hu⁷, Anuradha Agarwal⁷, Igor Luzinov¹, Kathleen Richardson⁴

¹Department of Materials Science and Engineering, Clemson University, ²Department of Materials Science and Engineering, Texas A&M University, ³Department of Electrical and Computer Engineering, Texas A&M University, ⁴College of Optics and Photonics, Center for Research and Education in Optics and Lasers (CREOL), University of Central Florida, ⁵Department of Materials Science and Engineering, Massachusetts Institute of Technology, ⁶Department of Mechanical Engineering, Virginia Polytechnic Institute, ⁷Microphotonics Center, Massachusetts Institute of Technology

Podsumowanie

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Keywords Electrospray Deposition

Chalcogenide Glass Films

Mid infrared Photonic Applications

Film Thickness Profile

Compositional Gradient

Chip based Mid infrared Chemical Sensing

Taylor Cone

Serpentine Path

Linear Thickness Profile

Annealing

FTIR Spectrum

Rozdziały w tym wideo

0:05

Title

0:45

Setting Up the Deposition Process

1:48

Electrospray Depostion of Chalcogenide Films

2:58

Characterization of Residual Solvent Removal of the Chalcogenide Films

4:10

Measurement of Chalcogenide Film Thickness

6:50

Results: Evaluation of Electrosprayed Film Properties

7:58

Conclusion

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Electrospray Deposition of Uniform Thickness Ge₂₃Sb₇S₇₀ and As₄₀S₆₀ Chalcogenide Glass Films