All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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11:33 min

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January 19th, 2018

DOI :

10.3791/56861-v

January 19th, 2018

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Mohammad Rashidi¹^,², Wyatt Vine¹, Jacob A.J. Burgess³^,⁴^,⁵, Marco Taucer¹^,²^,⁶, Roshan Achal¹, Jason L. Pitters², Sebastian Loth³^,⁴, Robert A. Wolkow¹^,²

¹Department of Physics, University of Alberta, ²National Institute for Nanotechnology, National Research Council of Canada, Edmonton, ³Max Planck Institute for the Structure and Dynamics of Matter, ⁴Max Planck Institute for Solid State Research, ⁵Department of Physics and Astronomy, University of Manitoba, ⁶Joint Attosecond Science Laboratory, University of Ottawa

Podsumowanie

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Keywords Nanosecond resolved Scanning Tunneling Microscopy

Single Dopant Charge Dynamics

Time resolved Scanning Tunneling Microscopy

Semiconductor Dopants

Tunneling Current

Ultra high Vacuum

Cryogenic Temperatures

Arbitrary Function Generator

Radio Frequency Switches

Silicon Wafer

Sample Preparation

Tungsten Filament

Rozdziały w tym wideo

0:05

Title

0:52

Initial Setup of Microscope and Experiments

2:05

Preparation of the H-Si(100)-(2x1) Reconstruction

4:20

Assessing the Quality of the Pump-probe Pulses at the Tunnel Junction

6:32

Experiment 1: Time-resolved Scanning Tunneling Spectroscopy

7:55

Experiment 2: Time-resolved STM Measurements of Relaxation Dynamics

8:47

Experiment 3: Time-resolved STM Measurements of Excitation Dynamics

9:27

Results: Investigation of Single Dopant Change Dynamics

10:43

Conclusion

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