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JoVE Journal

Engineering

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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11:33 min

January 19th, 2018

January 19th, 2018

8,970 Views

0:05

Title

0:52

Initial Setup of Microscope and Experiments

2:05

Preparation of the H-Si(100)-(2x1) Reconstruction

4:20

Assessing the Quality of the Pump-probe Pulses at the Tunnel Junction

6:32

Experiment 1: Time-resolved Scanning Tunneling Spectroscopy

7:55

Experiment 2: Time-resolved STM Measurements of Relaxation Dynamics

8:47

Experiment 3: Time-resolved STM Measurements of Excitation Dynamics

9:27

Results: Investigation of Single Dopant Change Dynamics

10:43

Conclusion

Transcrição

The overall goal of electronic time-resolved scanning tunneling microscopy is to study dynamic processes occurring on the atomic scale. In these experiments, the charged dynamics of dopants in silicon are studied. These methods can be used to inve

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We demonstrate an all-electronic method to observe nanosecond-resolved charge dynamics of dopant atoms in silicon with a scanning tunneling microscope.

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