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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

7.1K Views

07:00 min

June 25th, 2020

DOI :

10.3791/60167-v

June 25th, 2020


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Graphene assisted Epitaxy

Rozdziały w tym wideo

0:04

Introduction

0:40

Atmospheric-Pressure Chemical Vapor Deposition (APCVD) Growth of Graphene on Nano-Patterned SapphireSubstrate (NPSS) and Nitrogen (N2)-Plasma Treatment

2:03

Metal-Organic Chemical Vapor Deposition (MOCVD) Growth of Aluminum Nitrogen (AlN) on Graphene-NPSS and of Aluminum-Gallium-Nitrogen (AlGaN) Multiple Quantum Wells (MQW)

3:08

AlGaN-Based Deep Ultraviolet Light-Emitting Diode (DUV-LED) Fabrication

6:02

Results: Representative AIN Characterization

6:32

Conclusion

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