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JoVE Journal

Engineering

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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

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07:00 min

June 25th, 2020

June 25th, 2020

7,032 Views

0:04

Introduction

0:40

Atmospheric-Pressure Chemical Vapor Deposition (APCVD) Growth of Graphene on Nano-Patterned SapphireSubstrate (NPSS) and Nitrogen (N2)-Plasma Treatment

2:03

Metal-Organic Chemical Vapor Deposition (MOCVD) Growth of Aluminum Nitrogen (AlN) on Graphene-NPSS and of Aluminum-Gallium-Nitrogen (AlGaN) Multiple Quantum Wells (MQW)

3:08

AlGaN-Based Deep Ultraviolet Light-Emitting Diode (DUV-LED) Fabrication

6:02

Results: Representative AIN Characterization

6:32

Conclusion

Transkript

This new protocol for aluminum nitrides quick growth on nano-patterned sapphire substrate with graphene layer can be used for rapid and inexpensive generation of high-performing deep ultraviolet LEDs. Using di-eel graphene as the aluminum nitride

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A protocol for graphene-assisted growth of high-quality AlN films on nano-patterned sapphire substrate is presented.

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