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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

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07:00 min

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June 25th, 2020

DOI :

10.3791/60167-v

June 25th, 2020

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7,032 Views

Xiang Zhang*¹^,², Zhaolong Chen*³, Hongliang Chang¹^,², Jianchang Yan¹^,², Shenyuan Yang²^,⁴, Junxi Wang¹^,², Peng Gao⁵, Tongbo Wei¹^,²

¹State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, ²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, ³Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, ⁴State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, ⁵Electron Microscopy Laboratory, School of Physics, Peking University

章

文字起こし

要約

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Graphene

Quasi van Der Waals Epitaxy

AlN Film

Nano patterned Sapphire Substrate

Aluminum Gallium Nitrogen

Quantum Wells

P type Layers

Inductive Coupled Plasma Etching

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