Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain BoundariesOana Cojocaru-Mirédin 1, Torsten Schwarz 1, Pyuck-Pa Choi 1, Michael Herbig 1, Roland Wuerz 2, Dierk Raabe 1
1Department of Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, 2Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg ( ZSW )
In this work, we describe the use of the atom-probe tomography technique for studying the grain boundaries of the absorber layer in a CIGS solar cell. A novel approach to prepare the atom probe tips containing the desired grain boundary with a known structure is also presented here.
