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The present protocol demonstrates the development of electrolyte-gated graphene field-effect transistor (EGGFET) biosensor and its application in biomarker immunoglobulin G (IgG) detection.
In the current study, graphene and its derivatives have been investigated and used for many applications, including electronics, sensing, energy storage, and photocatalysis. Synthesis and fabrication of high quality, good uniformity, and low defects graphene are critical for high-performance and highly sensitive devices. Among many synthesis methods, chemical vapor deposition (CVD), considered a leading approach to manufacture graphene, can control the number of graphene layers and yield high-quality graphene. CVD graphene needs to be transferred from the metal substrates on which it is grown onto insulating substrates for practical applications. However, separation and transferring of graphene onto new substrates are challenging for a uniform layer without damaging or affecting graphene's structures and properties. Additionally, electrolyte-gated graphene field-effect transistor (EGGFET) has been demonstrated for its wide applications in various biomolecular detections because of its high sensitivity and standard device configuration. In this article, poly (methyl methacrylate) (PMMA)-assisted graphene transferring approach, fabrication of graphene field-effect transistor (GFET), and biomarker immunoglobulin G (IgG) detection are demonstrated. Raman spectroscopy and atomic force microscopy were applied to characterize the transferred graphene. The method is shown to be a practical approach for transferring clean and residue-free graphene while preserving the underlying graphene lattice onto an insulating substrate for electronics or biosensing applications.
Graphene and its derivatives have been investigated and used for many applications, including electronics1,2, sensing3,4,5, energy storage6,7, and photocatalysis1,6,8. Synthesis and fabrication of high quality, good uniformity, and low defects graphene are critical for high-performance and highly sensitive devices. Since the development of Chemical vapor deposition (C....
1. Transferring chemical vapor deposition of graphene
The representative results show the transferred CVD graphene characterized by Raman and AFM, respectively. The G peak and the 2D peaks of the Raman image give comprehensive information regarding the existence and the quality of the transferred monolayer graphene32 (Figure 1). Standard lithography processes30,31 were applied for fabricating the GFET device, as shown in Figure 2.
The purchased CVD graphene on copper film needs to be trimmed to the right size for the following fabrication steps. Cutting of the films can cause wrinkling, which needs to be prevented. The parameters provided in the fabrication step can be referred to for plasma etching of graphene, and these numbers could be varied when using different instruments. The etched sample must be closely monitored and inspected to ensure complete graphene etching. Multiple pre-cleaning methods can be applied to clean the substrates, such a.......
The experiments were conducted at West Virginia University. We acknowledge the Shared Research Facilities at West Virginia University for device fabrication and material characterization. This work was supported by the US National Science Foundation under Grant No. NSF1916894.
....Name | Company | Catalog Number | Comments |
1-pyreneutyric acid N- hydroxysuccinimide ester | Sigma Aldrich | 457078-1G | functionalization |
Asylum MFP-3D Atomic Force Microscope | Oxford Instruments | graphene characterization | |
AZ 300 MIF | MicroChemicals | AZ 300 MIF | photoresist developer |
AZ 300 MIF | MicroChemicals | AZ 300 MIF | photoresist |
Bovine Serum Albumin | Sigma Aldrich | 810014 | blocking |
Branson 1210 Sonicator | SONITEK | sample cleaning | |
Copper Etchant | Sigma Aldrich | 667528-500ML | removing copper film to release graphene |
Dimethyl Sulfoxide (DMSO) | VWR | 97063-136 | functionalization |
Disposable Biopsy Punches, Integra Miltex | VWR | 21909-144 | create well in PDMS |
Gold etchant | Gold Etch, TFA, Transene | 658148 | enchant |
Graphene | Graphene supermarket | 2" x 2" sheet | biosensing element of the device |
IgG aptamer | Base Pair Biotechnologies | customized | bioreceptor |
Keithley 4200A-SCS Parameter Analyzer | Tektronix | measurement and detection | |
KMG CR-6 | KMG chemicals | 64216 | Chromium etchant |
Kurt J. Lesker E-beam Evaporator | Kurt J. Lesker | metal deposition | |
Laurell Technologies 400 Spinners | Laurell Technologies | WS-400BZ-6NPP/LITE | thin film coating |
March PX-250 Plasma Asher | March Instruments | sample cleaning | |
Nickel etchant | Nickel Etchant, TFB, Transene | 600016000 | etchant |
OAI Flood Exposure | OAI | photolithography | |
Phosphate Buffered Saline (PBS) | Sigma Aldrich | 806552-500ML | buffer |
PMMA 495K A4 | MicroChemicals | PMMA 495K A4 | Photoresist for assisting graphene transferring |
Polydimethylsiloxane (PDMS) | Sigma Aldrich | Sylgard 184 | sample delivery well |
Renishaw InVia Raman Microscope | Renishaw | graphene characterization | |
Sodium Hydroxide (NaOH) | Sigma Aldrich | 221465-25G | functionalization |
Suss Microtech MA6 Mask Aligner | Suss MicroTec | photolithography | |
Thermo Scientific Cimarec Hotplate | Thermo Scientific | SP131635 | sample and device Baking |
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