Yazarlar LT-GaAs yüzey sağlamak için Picometrix teşekkür ve minnetle Michigan Uzay Grant Konsorsiyumu, Dr John Albrecht (sözleşme # N66001-10-1-4027), NSF KARİYER tarafından yönetilen DARPA Genç Fakültesi Ödülü mali destek kabul olur Ödül Dr Samir El-Gazali (sözleşme # N00014-11-1-0096), Dr Paul Maki (sözleşme # N00014-12-1-0947) tarafından yönetilen ONR Genç Araştırmacı Ödülü, ve tarafından yönetilen ARO Genç Araştırmacı Ödülü tarafından yönetilen Dr Dev Palmer (sözleşme # W911NF-12-1-0253).

1. Plasmonik Foto iletken Verici Fabrikasyon <ol><li> Plasmonik ızgaralar Üretiyor. <ol><li> Izopropanol (2 dakika), ardından aseton (2 dakika) çeker ve iyonu giderilmiş su (10 saniye) ile durulama yarı iletken yonga temizleyin. </li><li> Azot ile örnek kurulayın ve ° C 90 saniye kalan su çıkarmak için 115 bir ocak üzerinde ısı. </li><li> 45 sn için 4000 rpm&#39;de örnek Spin MicroChem 950K PMMA A4. Ön fırında 3 dakika 180 ° C de bir ocak karşı. </li><li> Bir elektron demeti litografi aracı (JEOL JBx-6300-FS) içine örnek yükleyin. 100 kV ivme gerilimi kullanarak, 650 μC / cm 2 civarında bir temel dozda plasmonik ızgara deseni Açığa. </li><li> Bir MIBK içinde örnek daldırarak PMMA geliştirin: 90 sn IPA 01:03 karışımı. Hemen 60 saniye boyunca bir saf izopropanol içindeki bir çözeltisine, örnek aktarın. </li><li> 10 sn için deiyonize su ile yıkayınız ve numune daha sonra, azot ile örnek kurutun. </li><li> Bir plazma striptizci (EVET-CV200RFS) içine örnek yükleyin. Descum 10 sn için 100 sccm O 2 debisi ile 30 ° C&#39;de 30 W RF güç kullanarak örnek. </li><li> Bir HCl daldırarak yüzey oksit çıkarın: 30 sn H 2 0 03:10 karışımı. Hemen 4 dakika boyunca iyonu giderilmiş su durulaması kaskad örnek aktarmak. </li><li> Metal çökeltme, önce atmosfer oksijene maruz kalmasını en aza indirmek için deiyonize su bir beher için örnek aktarın. </li><li> Metal bir evaporatör (Denton SJ-20) &#39;ye kadar deiyonize su içinde örnek içeren beher al. Odanın havalandırma ve sonra kaldırmak kuru ve oda (adımları örnek yüzey oksit oluşumunu önlemek için kesintisiz takip edilmesi gereken) içine örnek yükleyin. </li><li> 2x10 -6 Torr altında bir basınca odası Pompa. Mevduat Ti / Au (50/450 Å). </li><li> Odanın havalandırma ve örnek çıkarın. </li><li> Çökelen metal havalanışta amacıyla, içinde bir Teflon bir tutucu numuneyiaseton beher, kapak, ve bir gece bekletin. Beher ortaya çıkarmak, bir ultrasonik karıştırıcı yerleştirin, ve tüm istenmeyen metal (genellikle 30 saniye) kaldırılıncaya kadar bekleyin. </li></ol></li><li> Mevduat SiO 2 pasivasyon. <ol><li> 1.1.2 - 1.1.1 adımda olduğu gibi, örnek temizleyin. </li><li> Bir plazma gelişmiş kimyasal buhar biriktirme aracı (GSI PECVD) içinde örnek yükleyin. 200 ° C&#39;de SiO 2 Mevduat 1.500 Å </li></ol></li><li> SiO 2 ile temas vialar açın. <ol><li> 1.1.2 - 1.1.1 adımda olduğu gibi, örnek temizleyin. </li><li> 30 saniye boyunca 4000 rpm&#39;de HMDS üzerinde Spin. 30 saniye için 4.000 rpm Megaposit SPR 220-3,0 ışığa dönmesine. Ön fırında 90 saniye 115 ° C de bir ocak karşı. </li><li> Projeksiyon litografi step (GKRY AutoStep 200) içine örnek ve maske plaka yükleyin. Örnek hizalayın ve maruz. </li><li> 90 saniye 115 ° C de bir ocak maruz ışığa Post-pişirin. </li><li> 6 AZ 300 MIF geliştirici karşı geliştirin0 sn. </li><li> Hemen bir çağlayan için örnek hareket 4 dakika deiyonize su yıkayın. Azot ile örnek kurutun. </li><li> Bir reaktif iyon yakıcısı (LAM 9400) içine örnek yükleyin. 500 W bir TCP RF güç kullanarak Etch SiO 2, 100 W bir Eğilim RF güç, 15 sccm SF6-, C 4 F 8, O, 50 sccm 50 sccm, 80 saniye boyunca Ar 50 sccm. </li><li> Izopropanol (2 dakika) takiben aseton (5 dakika), örnek yerleştirerek fotorezist kısmı çıkartın. Iyonu giderilmiş su (10 saniye) ile durulayın. Azot ile kurutulur. </li><li> Bir plazma striptizci (EVET-CV200RFS) in örnek yükleyerek kalan ışığa çıkarın. 5 dakika boyunca 100 sccm O 2 debisi ile 30 ° C&#39;de 800 W RF güç kullanarak ışığa çıkarın. </li></ol></li><li> Antenler ve önyargı hatları imal. <ol><li> Desen antenler ve önyargı hatlarına 1.3.6 - Adımlar 1.3.1 tekrarlayın. </li><li> 1.1.9 yüzey oksit kaldırmak için - Adımlar 1.1.8 tekrarlayın. </li><li> Örnek içeren beher alın veMetal bir evaporatör (Denton SJ-20) iyondan arındırılmış su. </li><li> Odanın havalandırma ve sonra hızlı bir şekilde, kaldırmak kuru ve odasına örnek yükleyin. </li><li> 2x10 -6 Torr altında bir basınca odası Pompa. Mevduat Ti / Au (10/4, 000 Å). </li><li> Odanın havalandırma ve örnek çıkarın. </li><li> Için kaldırın-off tevdi metal Adım 1.1.13 tekrarlayın. </li></ol></li><li> Örnek paketleyin. <ol><li> Tutkal 8 mm delikli bir 2 inç alüminyum yıkama için bir 12 mm çapında hiper-yarı küresel silikon lens kenarları. </li><li> Tutkal metal izleri ile bir PCB board, hangi bir alüminyum yıkama için, kolayca lehim yapabilirsiniz. </li><li> Ince epoksi kullanarak silikon lens üzerinde fabrikasyon plasmonik photoconductive Terahertz verici prototip monte edin. </li><li> Aynı alüminyum pul yapıştırılmış bir PCB kuruluna tel bağ cihaz temas pedleri. </li><li> PCB board üzerindeki metal izleri için lehim teli. </li><li> Parametrik bir analiz (Hewlett Pack cihaz temas pedleri bağlayıntest amaçlı PCB kurulu ilgili yastıkları lehim telleri kullanarak ard 4155A). </li></ol></li></ol> 2. Plasmonik Foto iletken Verici Karakterizasyonu <ol><li> Cihaz hizalama. <ol><li> Bir rotasyon montaj üzerinde plasmonik photoconductive Terahertz verici prototip taşıyan alüminyum yıkama yerleştirin ve sıkı bir Ti gelen optik pompa odaklanmak: Sapphire her cihazın aktif alan üzerine lazer (MIRA 900D V10 XW OPT 110V) mod-kilitli. </li><li> Optik pompanın elektrik alanı, yüzey plazmon dalgaları (plasmonik kafeslerine normal) etkin uyarılması için yönelimli olduğu gibi dönme montaj ayarlayın. </li><li> Aynı anda her cihaza önyargı gerilimleri uygulamak ve her cihazda kaynaklı elektrik akımı ölçmek için parametrik analiz kullanın. Test altındaki her cihazın fotoakım maksimize ederek optimum optik pompa uyum ve polarizasyon ayarı onaylayın. </li></ol></li><li> Çıkış gücü ölçümurement. <ol><li> Her cihazda mod-kilitli pompa lazer olaydan optik pompa modüle bir optik kıyıcı (Thorlabs MC2000) kullanın. </li><li> Bir pyroelektrik dedektörü (Spectrum Dedektör, Inc SPI-A-65 THz) kullanarak plasmonik photoconductive Terahertz verici prototip çıkış gücü ölçün. </li><li> Için bir kilit-düşük gürültü düzeylerinde Terahertz güç verileri kurtarmak için optik kıyıcı referans frekansı ile amplifikatör (Stanford Araştırma Sistemleri SR830). Pyroelektrik dedektörün çıkışını </li></ol></li><li> Radyasyon spektral karakterizasyonu. <ol><li> Sapphire mod-kilitli lazer ve bir pompa ışın ve bir prob ışınına modu kilitli lazer çıktı bölmek için bir ışın ayırıcı kullanın: Bir Ti ile başlayın. </li><li> Pompa yolunda optik ışın modüle etmek için bir Elektrooptik modülatörü (Thorlabs EO-AM-NR-,-C2) kullanın. Terahertz radyasyon üretmek için test edilen, foto iletken yayıcı en aktif alan üzerine pompa ışın odaklanın. </li><li> Paralelleştirmekilk polietilen küresel lens kullanarak oluşturulan Terahertz far. Ikinci bir polietilen küresel lens kullanarak paralelleştirilmiş Terahertz ışın odaklanın. </li><li> Terahertz ışın odağı önce, bir ITO kaplı cam filtre kullanılarak prob optik ışını ile paralelleştirilmiş Terahertz ışın birleştirir. </li><li> Kalınlığında 1 mm yerleştirin, &lt;110&gt; ZnTe kristal optik ve Terahertz ışınlarının kombine odak bir dönüş sahnede monte. </li><li> ZnTe kristal içindeki etkileşim optik ve Terahertz darbeler arasındaki zaman gecikmesini değiştirmek için bir motorlu lineer aşama (Thorlabs NRT100) kullanarak optik prob yolunda bir kontrol optik gecikme hattı yerleştirin. </li><li> Prob yolunda bir yarım waveplate kullanarak, Terahertz polarizasyon yönüne 45 ° &#39;lik açıyla olduğu optik prob polarizasyon döndürün. </li><li> ZnTe kristal sonra çeyrek waveplate kullanın, dairesel polarizasyon içine optik ışın polarizasyon dönüştürmek. </li><li> Sirkülasyon bölünmüşBir Wollaston prizma tarafından iki kola as ı polarize optik ışın. Bir kilit-amplifikatör bağlı iki dengeli dedektör kullanarak her dalında optik ışın gücünü ölçmek. </li><li> Bir bilgisayara motorlu gecikme hattı ve kilit-amplifikatör bağlayın. Iteratif motorlu gecikme hattı, duraklama hareket ettirmek, ve gelen sinyal büyüklüğü kilit-amplifikatör okumak için Matlab komut dosyası yazın. </li><li> Işık hızı ile toplam optik gecikme süresini bölünmesi yoluyla, zaman etki alanına sahne konuma dönüştürmek, frekans verileri elde etmek için gizli bir Fourier dönüşümü (Matlab kullanarak) izledi. </li></ol></li></ol>

<ol>
	<li>Preu, S., Dohler, G. H., Malzer, S., Wang, L. J., Gossard, A. C. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Tunable,+continuous-wave+terahertz+photomixer+sources+and+applications.">Tunable, continuous-wave terahertz photomixer sources and applications.</a> J. Appl. Phys. 109, 061301 (2011).</li><li>Bjarnason, J. E., Chan, T. L. J., Lee, A. W. M., Brown, E. R., Driscoll, D. C., Hanson, M., Gossard, A. C., Muller, R. E. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=ErAs:GaAs+photomixer+with+two-decade+tunability+and+12+&#956;W+peak+output+power.">ErAs:GaAs photomixer with two-decade tunability and 12 &#956;W peak output power.</a> Appl. Phys. Lett. 85, 3983-3985 (2004).</li><li>Peytavit, E., Lepilliet, S., Hindle, F., Coinon, C., Akalin, T., Ducournau, G., Mouret, G., Lampin, J. -. F. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Milliwatt-level+output+power+in+the+sub-terahertz+range+generated+by+photomixing+in+a+GaAs+photoconductor.">Milliwatt-level output power in the sub-terahertz range generated by photomixing in a GaAs photoconductor.</a> Appl. Phys. Lett. 99, 223508 (2011).</li><li>Upadhya, P. C., Fan, W., Burnett, A., Cunningham, J., Davies, A. G., Linfield, E. H., Lloyd-Hughes, J., Castro-Camus, E., Johnston, M. B., Beere, H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Excitation-density-dependent+generation+of+broadband+terahertz+radiation+in+an+asymmetrically+excited+photoconductive+antenna.">Excitation-density-dependent generation of broadband terahertz radiation in an asymmetrically excited photoconductive antenna.</a> Opt. Lett. 32, 2297-2299 (2007).</li><li>Roehle, H., Dietz, R. J. B., Hensel, H. J., B&#246;ttcher, J., K&#252;nzel, H., Stanze, D., Schell, M., Sartorius, B. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Next+generation+1.5+&#956;m+terahertz+antennas:+mesa-structuring+of+InGaAs/InAlAs+photoconductive+layers.">Next generation 1.5 &#956;m terahertz antennas: mesa-structuring of InGaAs/InAlAs photoconductive layers.</a> Opt. Express. 18, 2296-2301 (2010).</li><li>Taylor, Z. D., Brown, E. R., Bjarnason, J. E. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Resonant-optical-cavity+photoconductive+switch+with+0.5+%+conversion+efficiency+and+1.0W+peak+power.">Resonant-optical-cavity photoconductive switch with 0.5 % conversion efficiency and 1.0W peak power.</a> Opt. Lett. 31, 1729-1731 (2006).</li><li>Park, S. -. G., Jin, K. H., Yi, M., Ye, J. C., Ahn, J., Jeong, K. -. H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Enhancement+of+Terahertz+Pulse+Emission+by+Optical+Nanoantenna.">Enhancement of Terahertz Pulse Emission by Optical Nanoantenna.</a> ACS NANO. 6, 2026-2031 (2012).</li><li>Auston, D. H., Cheung, K. P., Smith, P. R. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Picosecond+photocoducting+Hertzian+dipoles.">Picosecond photocoducting Hertzian dipoles.</a> Appl. Phys. Lett. 45, 284-286 (1984).</li><li>Berry, C. W., Jarrahi, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Terahertz+generation+using+plasmonic+photoconductive+gratings.">Terahertz generation using plasmonic photoconductive gratings.</a> New Journal of Physics Focus Issue on Terahertz Plasmonics. 14, 105029 (2012).</li><li>Berry, C. W., Hashemi, M. R., Unlu, M., Jarrahi, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Significant+Radiation+Enhancement+in+Photoconductive+Terahertz+Emitters+by+Incorporating+Plasmonic+Contact+Electrodes.">Significant Radiation Enhancement in Photoconductive Terahertz Emitters by Incorporating Plasmonic Contact Electrodes.</a> arXiv. , 1209.1680v1 (2012).</li><li>Berry, C. W., Jarrahi, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Ultrafast+Photoconductors+based+on+Plasmonic+Gratings.">Ultrafast Photoconductors based on Plasmonic Gratings.</a> Proc. Int. Conf. Infrared, Millimeter, and Terahertz Waves. , 1-2 (2011).</li><li>Berry, C. W., Jarrahi, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Plasmonically-enhanced+localization+of+light+into+photoconductive+antennas.">Plasmonically-enhanced localization of light into photoconductive antennas.</a> Proc. Conf. Lasers and Electro-Optics. , CFI2 (2010).</li><li>Berry, C. W., Jarrahi, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Principles+of+impedance+matching+in+photoconductive+antennas.">Principles of impedance matching in photoconductive antennas.</a> Journal of Infrared, Millimeter and Terahertz. , (2012).</li><li>Ralph, S. E., Grischkowsky, D. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Trap-enhanced+electric+fields+in+semi-insulators:+The+role+of+electrical+and+optical+carrier+injection.">Trap-enhanced electric fields in semi-insulators: The role of electrical and optical carrier injection.</a> Appl. Phys. Lett. 59, 1972 (1991).</li><li>Upadhya, P. C., Fan, W., Burnett, A., Cunningham, J., Davies, A. G., Linfield, E. H., Lloyd-Hughes, J., Castro-Camus, E., Johnston, M. B., Beere, H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Excitation-density-dependent+generation+of+broadband+terahertz+radiation+in+an+asymmetrically+excited+photoconductive+antenna.">Excitation-density-dependent generation of broadband terahertz radiation in an asymmetrically excited photoconductive antenna.</a> Opt. Lett. 32, 2297-2299 (2007).</li><li>Taylor, Z. D., Brown, E. R., Bjarnason, J. E. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Resonant-optical-cavity+photoconductive+switch+with+0.5+%+conversion+efficiency+and+1.0W+peak+power.">Resonant-optical-cavity photoconductive switch with 0.5 % conversion efficiency and 1.0W peak power.</a> Opt. Lett. 31, 1729-1731 (2006).</li><li>Jarrahi, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Terahertz+radiation-band+engineering+through+spatial+beam-shaping.">Terahertz radiation-band engineering through spatial beam-shaping.</a> Photonic Technology Letters. 21, 2019620 (2009).</li><li>Jarrahi, M., Lee, T. H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High+power+tunable+terahertz+generation+based+on+photoconductive+antenna+arrays.">High power tunable terahertz generation based on photoconductive antenna arrays.</a> Proc. IEEE International Microwave Symposium. , 391-394 (2008).</li><li>Beck, M., Schafer, H., Klatt, G., Demsar, J., Winnerl, S., Helm, M., Dekorsy, T. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Impulsive+terahertz+radiation+with+high+electric+fields+from+an+amplifier-driven+large-area+photoconductive+antenna.">Impulsive terahertz radiation with high electric fields from an amplifier-driven large-area photoconductive antenna.</a> Opt. Express. 18, 9251-9257 (2010).</li><li>Hattori, T., Egawa, K., Ookuma, S. I., Itatani, T. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Intense+terahertz+pulses+from+large-aperture+antenna+with+interdigitated+electrodes.">Intense terahertz pulses from large-aperture antenna with interdigitated electrodes.</a> Jpn. J. Appl. Phys. 45, L422-L424 (2006).</li><li>Kim, J. H., Polley, A., Ralph, S. E. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Efficient+photoconductive+terahertz+source+using+line+excitation.">Efficient photoconductive terahertz source using line excitation.</a> Opt. Lett. 30, 2490-2492 (2005).</li><li>Dreyhaupt, A., Winnerl, S., Dekorsy, T., Helm, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High-intensity+terahertz+radiation+from+a+microstructured+large-area+photoconductor.">High-intensity terahertz radiation from a microstructured large-area photoconductor.</a> Appl. Phys. Lett. 86, 121114 (2005).</li><li>Brown, E. R., Lee, A. W. M., Navi, B. S., Bjarnason, J. E. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Characterization+of+a+planar+self-complementary+square-spiral+antenna+in+the+THz+region.">Characterization of a planar self-complementary square-spiral antenna in the THz region.</a> Microwave Opt. Technol. Lett. 48, 524-529 (2006).</li><li>Huo, Y., Taylor, G. W., Bansal, R. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Planar+log-periodic+antennas+on+extended+hemishperical+silicon+lenses+for+millimeter/submillimeter+wave+detection+applications.">Planar log-periodic antennas on extended hemishperical silicon lenses for millimeter/submillimeter wave detection applications.</a> Int. J. Infrared and Millimeter Waves. 23, 819 (2002).</li><li>Heshmat, B., Pahlevaninezhad, H., Pang, Y., Masnadi-Shirazi, M., Lewis, R. B., Tiedje, T., Gordon, R., Darcie, T. E. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> Nanoplasmonic Terahertz Photoconductive Switch on GaAs. Nano Lett. 12, 6255-6259 (2012).</li><li>Berry, C. W., Hashemi, M. R., Unlu, M., Jarrahi, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Significant+Performance+Enhancement+in+Photoconductive+Terahertz+Optoelectronics+by+Incorporating+Plasmonic+Contact+Electrodes.">Significant Performance Enhancement in Photoconductive Terahertz Optoelectronics by Incorporating Plasmonic Contact Electrodes.</a> Nature Communications. 4, 1622 (2013).</li><li>Wang, N., Berry, C. W., Hashemi, M. R., Jarrahi, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Plasmonic+photoconductive+detectors+for+enhanced+terahertz+detection+sensitivity.">Plasmonic photoconductive detectors for enhanced terahertz detection sensitivity.</a> Optics Express. , (2013).</li><li>Hsieh, B. -. Y., Jarrahi, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Analysis+of+periodic+metallic+nano-slits+for+efficient+interaction+of+terahertz+and+optical+waves+at+nano-scale+dimensions.">Analysis of periodic metallic nano-slits for efficient interaction of terahertz and optical waves at nano-scale dimensions.</a> J. Appl. Phys. 109, 084326 (2011).</li><li>Hsieh, B. -. Y., Wang, N., Jarrahi, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Toward+Ultrafast+Pump-Probe+Measurements+at+the+Nanoscale.+Special+Issue+of+"Optics+in+2011.">Toward Ultrafast Pump-Probe Measurements at the Nanoscale. Special Issue of "Optics in 2011.</a> Optics &amp; Photonics News. 22, (2011).</li><li>Hsieh, B. -. Y., Jarrahi, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Simultaneous+focusing+of+terahertz+and+optical+waves+into+nano-scale.">Simultaneous focusing of terahertz and optical waves into nano-scale.</a> Proc. Int. Conf. Infrared, Millimeter, and Terahertz Waves. , 1-2 (2011).</li><li>Jackson, A. W., Ibbetson, J. P., Gossard, A. C., Mishra, U. K. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Reduced+thermal+conductivity+in+low-temperature+grown+GaAs.">Reduced thermal conductivity in low-temperature grown GaAs.</a> Appl. Phys. Lett. 74, 2325-2327 (1999).</li></ol>

Çıkar çatışması ilan etti.

Bu video makalede, biz iki mertebe ile optik-to-Terahertz dönüşüm verimliliği artırmak için bir plasmonik kişi elektrot yapılandırması kullanan bir roman photoconductive Terahertz oluşturma tekniği mevcut. Sunulan plasmonik photoconductive yayıcılar gelen Terahertz radyasyon gücü önemli bir artış gelecekte yüksek hassasiyetli Terahertz görüntüleme, spektroskopi ve spektrometresi sistemleri gelişmiş kimyasal tanımlama için kullanılan, tıbbi görüntüleme, biyolojik algılama, astronomi, atm...

Biz iki mertebe ile optik-to-Terahertz dönüşüm verimliliği artırmak için bir plasmonik kişi elektrot yapılandırması kullanan bir roman photoconductive Terahertz verici sunuyoruz. Bizim teknik yüksek kuantum verimliliği ve geleneksel Fotokondüktörlerin bir ultra hızlı çalışması arasındaki doğal dengeyi kaynaklanan geleneksel photoconductive Terahertz yayıcılar, yani düşük çıkış gücü ve düşük güç verimliliği, en önemli sınırlamalar giderir. Bu birdirbir performans artışı yol açtı tasarım en önemli yeniliklerden biri de temas elektrotlar yakın fotoğraf oluşturulan taşıyıcı çok sayıda, biriken bir kişi elektrot yapılandırma tasarlamaktır onlar içinde toplanabilir böyle bir alt- pikosaniye zaman ölçeği. Diğer bir deyişle, foto iletken ultra hızlı çalışma ve yüksek kuantum verimliliği arasındaki dengeyi fotoğraf cins mekansal manipülasyon tarafından yönetilmektedirTed taşıyıcılar. Plasmonik temas elektrotlar (1) plasmonik elektrotlar (kırınım sınırı aşan), metal temas da (2) olağanüstü ışık güçlendirme ve yarı iletken arayüzü 10, 11 fotoğraf emici arasında nano cihazın aktif alanlara ışık hapsi izin vererek bu eşsiz özelliği sunuyor. Çözüm bir diğer önemli özelliği bu Terahertz yayılan anten parazit yükleme önemli bir artış olmadan büyük iletken aktif alanları barındırır olmasıdır. Kullanan büyük iletken aktif alanlarda geleneksel photoconductive yayıcılar gelen maksimum radyasyon gücü için nihai sınırlamalar taşıyıcı tarama etkisi ve termal arıza, azaltılması sağlar. Bu video makalede yöneten fizik, sayısal modelleme ve deneysel doğrulama anlatarak bizim sunulan çözüm benzersiz özellikleri üzerinde yoğunlaşmıştır. Biz deneysel bir plasmonik phot 50 kat daha yüksek Terahertz güçler göstermekolmayan plasmonik temas elektrotlar ile benzer bir foto-iletken yayıcı ile karşılaştırıldığında oconductive yayıcı.

<table border="1">
 <tbody>
 <tr>
 <td>&nbsp;</td>
 <td>&nbsp;</td>
 <td>&nbsp;</td>
 <td>Reagent</td>
 </tr>
 <tr>
 <td>Polymethyl Methacrylate (PMMA)</td>
 <td>MicroChem</td>
 <td>950K PMMA A4</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>Hexamethyldisilazane (HMDS)</td>
 <td>Shin-Etsu MicroSI</td>
 <td>MicroPrime HP Primer</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>Optical Photoresist</td>
 <td>Dow Chemical</td>
 <td>Megaposit SPR 220-3.0</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>Photoresist Developer</td>
 <td>AZ Electronic Materials</td>
 <td>AZ 300 MIF Developer</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>Methyl Iso-Butyl Keytone (MIBK)</td>
 <td>Avantor Performance Materials</td>
 <td>9322-03</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>&nbsp;</td>
 <td>&nbsp;</td>
 <td>&nbsp;</td>
 <td>Equipment</td>
 </tr>
 <tr>
 <td>Ti:Sapphire Mode-Locked Laser</td>
 <td>Coherent</td>
 <td>MIRA 900D V10 XW OPT 110V</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>Pyroelectric Detector</td>
 <td>Spectrum Detector</td>
 <td>SPI-A-65 THz</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>Electron-Beam Lithography Tool</td>
 <td>JEOL</td>
 <td>JBX-6300-FS</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>Plasma Stripper</td>
 <td>Yield Engineering Systems</td>
 <td>YES-CV200RFS</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>Metal Evaporator</td>
 <td>Denton Vacuum</td>
 <td>SJ-20</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>Plasma Enhanced Chemical Vapor Deposition Tool</td>
 <td>GSI</td>
 <td>GSI PECVD System</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>Projection Lithography Stepper</td>
 <td>GCA</td>
 <td>AutoStep 200</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>Reactive Ion Etcher</td>
 <td>LAM Research</td>
 <td>9400</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>Parameter Analyzer</td>
 <td>Hewlett Packard</td>
 <td>4155A</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>Optical Chopper</td>
 <td>Thorlabs</td>
 <td>MC2000</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>Lock-in Amplifier</td>
 <td>Stanford Research Systems</td>
 <td>SR830</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>Electrooptic Modulator</td>
 <td>Thorlabs</td>
 <td>EO-AM-NR-C2</td>
 <td>&nbsp;</td>
 </tr>
 <tr>
 <td>Motorized Linear Stage</td>
 <td>Thorlabs</td>
 <td>NRT100</td>
 <td>&nbsp;</td>
 </tr>
 </tbody>
</table>

design, fabrication, and experimental characterization of plasmonic photoconductive terahertz emitters

Bu videoyu yazıda Terahertz dalgaları üretmek için son derece etkili bir yöntem ayrıntılı bir gösteri sunmak. Bizim teknik Terahertz nesil 1-8 için en sık kullanılan tekniklerden biri olmuştur photoconduction, dayanmaktadır. Bir foto-iletken verici olarak Terahertz nesil bir darbeli veya heterodyned lazer aydınlatma ile ultra hızlı iletken pompalama elde edilir. Pompa lazer zarf aşağıdaki kaynaklı fotoakım, Terahertz radyasyon oluşturmak için iletken temas elektrotlara bağlı bir anten ışıma Terahertz yönlendirilir. Bir photoconductive yayıcı kuantum verimi teorik olarak 100% ulaşabilirsiniz rağmen, geleneksel Fotokondüktörlerin ve temas elektrotlar fotoğraf üretilen taşıyıcıların nispeten uzun taşıma yolu uzunlukları ciddi kendi kuantum verimi sınırlıdır. Ayrıca, taşıyıcı tarama etkisi ve ısıl bozunmaya katı maksimum çıkış p sınırlamakOver geleneksel photoconductive Terahertz kaynaklarının. Geleneksel photoconductive Terahertz vericilerin kuantum verimliliği sınırlamaları çözmek için, aynı anda yüksek kuantum verimli ve çok hızlı çalışmak üzere özel olarak bir plasmonik kişi elektrot yapılandırma içeren yeni bir photoconductive verici konsept geliştirdik. Nano ölçekli plasmonik temas elektrotları kullanarak, önemli ölçüde geleneksel Fotokondüktörlerin 9 göre iletken temas elektrotlar için ortalama fotoğraf oluşturulan taşıyıcı taşıma yolu azaltır. Bizim yöntem aynı zamanda yüksek optik pompa güçleri de taşıyıcı tarama etkisi ve termal arıza önleyerek maksimum Terahertz radyasyon gücü artırma, antene kapasitif yükleme önemli bir artış olmadan artan iletken aktif alan sağlar. Içeren plasmonik temas elektrotlar, biz geleneksel photoconductive te optik-to-Terahertz güç dönüşüm verimliliği arttırmak işlemini göstermektedir50 10 kat rahertz verici.

Elektrotlar irtibata taşıyıcı taşıma sürelerini azaltmak için plasmonik temas elektrotlar içeren geleneksel (Şekil 1a) ve plasmonik (Şekil 1b) photoconductive yayıcı: Terahertz güç geliştirme için plasmonik elektrot potansiyelini ortaya koymak için, iki Terahertz yayıcılar fabrikasyon. Her iki tasarım aynı LT-GaAs tabaka üzerine yapılmıştır sırasıyla 100 mikron ve 30 mikron, maksimum ve minimum genişlikleri ile 60 mikron uzunluğunda papyon anten bağlı an...

Watch this Scientific Journal Video about Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters at JoVE.com

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

Biz tasarım, imalat, ve geleneksel photoconductive yayıcılar göre büyüklüğü daha yüksek Terahertz güç seviyeleri iki sipariş sunuyoruz plasmonik photoconductive yayıcılar, deneysel karakterizasyonu için yöntemler açıklanmaktadır.

Plasmonik Foto iletken Terahertz Vericiler Tasarımı, İmalatı ve Deneysel Karakterizasyonu

In this video article we present a detailed demonstration of a highly efficient method for generating terahertz waves. Our technique is based on ...

design-fabrication-experimental-characterization-plasmonic

Research

Education

JoVE Core

JoVE Journal

Electrical Engineering

Engineering

Unit 1

System Protection

SCIENTISTS IN ACTION

14.8K Görüntüleme.  University of Michigan. Biz tasarım, imalat, ve geleneksel photoconductive yayıcılar göre büyüklüğü daha yüksek Terahertz güç seviyeleri iki sipariş sunuyoruz plasmonik photoconductive yayıcılar, deneysel karakterizasyonu için yöntemler açıklanmaktadır.

Video: Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

Terahertz Microfluidic Sensing Using a Parallel-plate Waveguide Sensor

Refractive index (RI) sensing is a powerful noninvasive and label-free sensing technique for the identification, detection and monitoring of microfluidic samples with a wide range of possible sensor designs such as interferometers and resonators 1,2. Most of the existing RI sensing applications focus on biological materials in aqueous solutions in visible and IR frequencies, such as DNA hybridization and genome sequencing. At terahertz frequencies, applications include quality control, monitoring of industrial processes and sensing and detection applications involving nonpolar materials.
Several potential designs for refractive index sensors in the terahertz regime exist, including photonic crystal waveguides 3, asymmetric split-ring resonators 4, and photonic band gap structures integrated into parallel-plate waveguides 5. Many of these designs are based on optical resonators such as rings or cavities. The resonant frequencies of these structures are dependent on the refractive index of the material in or around the resonator. By monitoring the shifts in resonant frequency the refractive index of a sample can be accurately measured and this in turn can be used to identify a material, monitor contamination or dilution, etc.
The sensor design we use here is based on a simple parallel-plate waveguide 6,7. A rectangular groove machined into one face acts as a resonant cavity (Figures 1 and 2). When terahertz radiation is coupled into the waveguide and propagates in the lowest-order transverse-electric (TE1) mode, the result is a single strong resonant feature with a tunable resonant frequency that is dependent on the geometry of the groove 6,8. This groove can be filled with nonpolar liquid microfluidic samples which cause a shift in the observed resonant frequency that depends on the amount of liquid in the groove and its refractive index 9.
Our technique has an advantage over other terahertz techniques in its simplicity, both in fabrication and implementation, since the procedure can be accomplished with standard laboratory equipment without the need for a clean room or any special fabrication or experimental techniques. It can also be easily expanded to multichannel operation by the incorporation of multiple grooves 10. In this video we will describe our complete experimental procedure, from the design of the sensor to the data analysis and determination of the sample refractive index.

The procedure for implementing a refractive index sensor for terahertz frequencies based on a grooved parallel-plate waveguide geometry is described here. The method yields a measurement of the refractive index of a small volume of liquid through monitoring of the shift in the resonant frequency of the waveguide structure

Paralel plaka Waveguide Sensor Kullanımı Terahertz Mikroakışkan Algılama

Refractive index (RI) sensing is a powerful noninvasive and label-free sensing technique for the identification, detection and monitoring of microfluidic ...

Mühendislik

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers

Metamaterials (MM), artificial materials engineered to have properties that may not be found in nature, have been widely explored since the first theoretical1 and experimental demonstration2 of their unique properties. MMs can provide a highly controllable electromagnetic response, and to date have been demonstrated in every technologically relevant spectral range including the optical3, near IR4, mid IR5 , THz6 , mm-wave7 , microwave8 and radio9 bands. Applications include perfect lenses10, sensors11, telecommunications12, invisibility cloaks13 and filters14,15. We have recently developed single band16, dual band17 and broadband18 THz metamaterial absorber devices capable of greater than 80% absorption at the resonance peak. The concept of a MM absorber is especially important at THz frequencies where it is difficult to find strong frequency selective THz absorbers19. In our MM absorber the THz radiation is absorbed in a thickness of ~ &lambda;/20, overcoming the thickness limitation of traditional quarter wavelength absorbers. MM absorbers naturally lend themselves to THz detection applications, such as thermal sensors, and if integrated with suitable THz sources (e.g. QCLs), could lead to compact, highly sensitive, low cost, real time THz imaging systems.

This protocol outlines the simulation, fabrication and characterization of THz metamaterial absorbers. Such absorbers, when coupled with an appropriate sensor, have applications in THz imaging and spectroscopy.

THz metamalzeme Emiciler Simülasyon, Üretimi ve Karakterizasyonu

Metamaterials (MM),  artificial materials engineered to have properties that may not be found in  nature, have been widely explored since the first ...

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

Slow light has been one of the hot topics in the photonics community in the past decade, generating great interest both from a fundamental point of view and for its considerable potential for practical applications. Slow light photonic crystal waveguides, in particular, have played a major part and have been successfully employed for delaying optical signals1-4 and the enhancement of both linear5-7 and nonlinear devices.8-11
Photonic crystal cavities achieve similar effects to that of slow light waveguides, but over a reduced band-width. These cavities offer high Q-factor/volume ratio, for the realization of optically12 and electrically13 pumped ultra-low threshold lasers and the enhancement of nonlinear effects.14-16 Furthermore, passive filters17 and modulators18-19 have been demonstrated, exhibiting ultra-narrow line-width, high free-spectral range and record values of low energy consumption.
To attain these exciting results, a robust repeatable fabrication protocol must be developed. In this paper we take an in-depth look at our fabrication protocol which employs electron-beam lithography for the definition of photonic crystal patterns and uses wet and dry etching techniques. Our optimised fabrication recipe results in photonic crystals that do not suffer from vertical asymmetry and exhibit very good edge-wall roughness. We discuss the results of varying the etching parameters and the detrimental effects that they can have on a device, leading to a diagnostic route that can be taken to identify and eliminate similar issues.
The key to evaluating slow light waveguides is the passive characterization of transmission and group index spectra. Various methods have been reported, most notably resolving the Fabry-Perot fringes of the transmission spectrum20-21 and interferometric techniques.22-25 Here, we describe a direct, broadband measurement technique combining spectral interferometry with Fourier transform analysis.26 Our method stands out for its simplicity and power, as we can characterise a bare photonic crystal with access waveguides, without need for on-chip interference components, and the setup only consists of a Mach-Zehnder interferometer, with no need for moving parts and delay scans.
When characterising photonic crystal cavities, techniques involving internal sources21 or external waveguides directly coupled to the cavity27 impact on the performance of the cavity itself, thereby distorting the measurement. Here, we describe a novel and non-intrusive technique that makes use of a cross-polarised probe beam and is known as resonant scattering (RS), where the probe is coupled out-of plane into the cavity through an objective. The technique was first demonstrated by McCutcheon et al.28 and further developed by Galli et al.29

Use of photonic crystal slow light waveguides and cavities has been widely adopted by the photonics community in many differing applications. Therefore fabrication and characterization of these devices are of great interest. This paper outlines our fabrication technique and two optical characterization methods, namely: interferometric (waveguides) and resonant scattering (cavities).

Fotonik Kristal Yavaş Işık Dalga Kılavuzları Ve Çürükler Üretimi ve Karakterizasyonu

Slow light has been one of the hot topics in the photonics community in the past decade, generating great interest both from a fundamental point of view ...

Fabrication and Characterization of Disordered Polymer Optical Fibers for Transverse Anderson Localization of Light

We develop and characterize a disordered polymer optical fiber that uses transverse Anderson localization as a novel waveguiding mechanism. The developed polymer optical fiber is composed of 80,000 strands of poly (methyl methacrylate) (PMMA) and polystyrene (PS) that are randomly mixed and drawn into a square cross section optical fiber with a side width of 250 &mu;m. Initially, each strand is 200 &mu;m in diameter and 8-inches long. During the mixing process of the original fiber strands, the fibers cross over each other; however, a large draw ratio guarantees that the refractive index profile is invariant along the length of the fiber for several tens of centimeters. The large refractive index difference of 0.1 between the disordered sites results in a small localized beam radius that is comparable to the beam radius of conventional optical fibers. The input light is launched from a standard single mode optical fiber using the butt-coupling method and the near-field output beam from the disordered fiber is imaged using a 40X objective and a CCD camera. The output beam diameter agrees well with the expected results from the numerical simulations. The disordered optical fiber presented in this work is the first device-level implementation of 2D Anderson localization, and can potentially be used for image transport and short-haul optical communication systems.

We develop and characterize a disordered polymer optical fiber that uses transverse Anderson localization as a novel waveguiding mechanism. This microstructured fiber can transport a small localized beam with a radius that is comparable to the beam radius of conventional optical fibers.

Işık Enine Anderson lokalizasyonu Düzensiz Polimer Fiber Optik imalatı ve Karakterizasyonu

We develop and characterize a disordered polymer optical fiber that uses transverse Anderson localization as a novel waveguiding mechanism. The developed ...

Patterning via Optical Saturable Transitions - Fabrication and Characterization

This protocol describes the fabrication and characterization of nanostructures using a novel nanolithographic technique called Patterning via Optical Saturable Transitions (POST). In this technique the chemical properties of organic photochromic molecules that undergo single-photon reactions are exploited, enabling rapid top-down nanopatterning over large areas at low light intensities, thereby, allowing for the circumvention of the far-field diffraction barrier.4 Simple, cost-effective, high throughput and resolution alternatives to nanopatterning are being explored, such as, two-photon polymerization5,6, beam pen lithography (BPL)7, scanning electron beam lithography (SEBL), and focused ion beam (FIB) patterning. However, multi-photon approaches require high light intensities, which limit their potential for high throughput and offer low image contrast. Although, electron and ion beam lithographic processes offer increased resolution, the serial nature of the process is limited to slow writing speeds, which also prevents patterning of features over large areas. Beam-pen lithography is an approach towards parallel near-field optical lithography. However, the gap between the source of the beam and the surface of the photoresist needs to be controlled extremely precisely for good pattern uniformity and this is very challenging to accomplish for large arrays of beams. Patterning via Optical Saturable Transitions (POST) is an alternative optical nanopatterning technique for patterning sub-wavelength features1-3. Since this technique uses single photons instead of electrons, it is extremely fast and does not require high light intensities1-3, opening the door to massive parallelization.

We report that the diffraction limit of conventional optical lithography can be overcome by exploiting the transitions of organic photochromic derivatives induced by their photoisomerization at low light intensities.1-3 This paper outlines our fabrication technique and two locking mechanisms, namely: dissolution of one photoisomer and electrochemical oxidation.

Optik Doyurulabilen Geçişler aracılığıyla Desenlendirme - İmalat ve Karakterizasyonu

This protocol describes the fabrication and characterization of nanostructures using a novel nanolithographic technique called Patterning via Optical ...

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices have used devices prepared by spin coating, a process that is not amenable to large-scale fabrication. This mismatch in device fabrication makes it difficult to translate quantitative results obtained in the laboratory to the commercial level, making optimization difficult. Using a mini-slot die coater, this mismatch can be resolved by translating the commercial process to the laboratory and characterizing the structure formation in the active layer of the device in real time and in situ as films are coated onto a substrate. The evolution of the morphology was characterized under different conditions, allowing us to propose a mechanism by which the structures form and grow. This mini-slot die coater offers a simple, convenient, material efficient route by which the morphology in the active layer can be optimized under industrially relevant conditions. The goal of this protocol is to show experimental details of how a solar cell device is fabricated using a mini-slot die coater and technical details of running in situ structure characterization using the mini-slot die coater.

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Here, we present a protocol to fabricate organic thin film solar cells using a mini-slot die coater and related in-line structure characterizations using synchrotron scattering techniques.

Toplu Heterojonksiyonlar Solar Hücre Baskı İmalatı ve<em&gt; In Situ</em&gt; Morfoloji Karakterizasyonu

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices ...

Free-form Light Actuators &#8212; Fabrication and Control of Actuation in Microscopic Scale

Liquid crystalline elastomers (LCEs) are smart materials capable of reversible shape-change in response to external stimuli, and have attracted researchers&#39; attention in many fields. Most of the studies focused on macroscopic LCE structures (films, fibers) and their miniaturization is still in its infancy. Recently developed lithography techniques, e.g., mask exposure and replica molding, only allow for creating 2D structures on LCE thin films. Direct laser writing (DLW) opens access to truly 3D fabrication in the microscopic scale. However, controlling the actuation topology and dynamics at the same length scale remains a challenge.
In this paper we report on a method to control the liquid crystal (LC) molecular alignment in the LCE microstructures of arbitrary three-dimensional shape. This was made possible by a combination of direct laser writing for both the LCE structures as well as for micrograting patterns inducing local LC alignment. Several types of grating patterns were used to introduce different LC alignments, which can be subsequently patterned into the LCE structures. This protocol allows one to obtain LCE microstructures with engineered alignments able to perform multiple opto-mechanical actuation, thus being capable of multiple functionalities. Applications can be foreseen in the fields of tunable photonics, micro-robotics, lab-on-chip technology and others.

Here, we fabricate 3D polymeric micro/nano structures in which both the shape and the molecular alignment can be engineered with nanometer scale accuracy by the use of direct laser writing. Light induced deformation of several types of liquid crystalline elastomer microstructures can be controlled in the microscopic scale.

Serbest biçimli Işık Aktüatörler - Mikroskobik Ölçeğinde imalat ve çalıştırma Kontrolü

Liquid crystalline elastomers (LCEs) are smart materials capable of reversible shape-change in response to external stimuli, and have attracted ...

Fabrication and Characterization of Superconducting Resonators

Superconducting microwave resonators are of interest for a wide range of applications, including for their use as microwave kinetic inductance detectors (MKIDs) for the detection of faint astrophysical signatures, as well as for quantum computing applications and materials characterization. In this paper, procedures are presented for the fabrication and characterization of thin-film superconducting microwave resonators. The fabrication methodology allows for the realization of superconducting transmission-line resonators with features on both sides of an atomically smooth single-crystal silicon dielectric. This work describes the procedure for the installation of resonator devices into a cryogenic microwave testbed and for cool-down below the superconducting transition temperature. The set-up of the cryogenic microwave testbed allows one to do careful measurements of the complex microwave transmission of these resonator devices, enabling the extraction of the properties of the superconducting lines and dielectric substrate (e.g., internal quality factors, loss and kinetic inductance fractions), which are important for device design and performance.

Superconducting microwave resonators are of interest for detection of light, quantum computing applications and materials characterization. This work presents a detailed procedure for fabrication and characterization of superconducting microwave resonator scattering parameters.

Süperiletken Rezonatörler Fabrikasyon ve Karakterizasyonu

Superconducting microwave resonators are of interest for a wide range of applications, including for their use as microwave kinetic inductance detectors ...

Fabrication of Nanopillar-Based Split Ring Resonators for Displacement Current Mediated Resonances in Terahertz Metamaterials

Terahertz (THz) split ring resonator (SRR) metamaterials (MMs) has been studied for gas, chemical, and biomolecular sensing applications because the SRR is not affected by environmental characteristics such as the temperature and pressure surrounding the resonator. Electromagnetic radiation in THz frequencies is biocompatible, which is a critical condition especially for the application of the biomolecular sensing. However, the quality factor (Q-factor) and frequency responses of traditional thin-film based split ring resonator (SRR) MMs are very low, which limits their sensitivities and selectivity as sensors. In this work, novel nanopillar-based SRR MMs, utilizing displacement current, are designed to enhance the Q-factor up to 450, which is around 45 times higher than that of traditional thin-film-based MMs. In addition to the enhanced Q-factor, the nanopillar-based MMs induce a larger frequency shifts (17 times compared to the shift obtained by the traditional thin-film based MMs). Because of the significantly enhanced Q-factors and frequency shifts as well as the property of biocompatible radiation, the THz nanopillar-based SRR are ideal MMs for the development of biomolecular sensors with high sensitivity and selectivity without inducing damage or distortion to biomaterials. A novel fabrication process has been demonstrated to build the nanopillar-based SRRs for displacement current mediated THz MMs. A two-step gold (Au) electroplating process and an atomic layer deposition (ALD) process are used to create sub-10 nm scale gaps between Au nanopillars. Since the ALD process is a conformal coating process, a uniform aluminum oxide (Al2O3) layer with nanometer-scale thickness can be achieved. By sequentially electroplating another Au thin film to fill the spaces between Al2O3 and Au, a close-packed Au-Al2O3-Au structure with nano-scale Al2O3 gaps can be fabricated. The size of the nano-gaps can be well defined by precisely controlling the deposition cycles of the ALD process, which has an accuracy of 0.1 nm.

A protocol for the design and fabrication of a novel nanopillar-based split ring resonator (SRR) is presented.

Terahertz Metamalzemeler de Yerdeğiştirme Akımı aracılığı Rezonansları için Nanopillar Tabanlı Bölünmüş Yüzük Rezonatörler Fabrikasyon

Terahertz (THz) split ring resonator (SRR) metamaterials (MMs) has been studied for gas, chemical, and biomolecular sensing applications because the SRR ...

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Here, we demonstrate the advantages of the laser Doppler vibrometer (LDV) over conventional techniques (the network analyzer), as well as the techniques to create an application-based microelectromechanical systems (MEMS) filter and how to use it efficiently (i.e., tuning the tuning-capability and avoiding both failure and stiction). LDV enables crucial measurements that are impossible with the network analyzer, such as higher mode detection (highly sensitive biosensor application) and resonance measurement for very small devices (fast prototyping). Accordingly, LDV was used to characterize the frequency tuning range and resonance frequency at different modes of the MEMS filters built for this study. This wide range frequency tuning mechanism is based simply on Joule heating from the embedded heaters and relatively high thermal stress with respect to the temperature of a fixed-fixed beam. However, we demonstrate that another limitation of this method is the resulting high thermal stress, which can burn the devices. Further improvement was achieved and shown for the first time in this study, such that the tuning capability was increased by 32% through an increase in the applied DC bias voltage (25 V to 35 V) between the two adjacent beams. This important finding eliminates the need for the extra Joule heating at the wider frequency tuning range. Another possible failure is through stiction and requirement of structure optimization: We propose a simple and easy technique of low frequency square wave signal application that can successfully separate the beams and eliminates the need for the more sophisticated and complicated methods given in the literature. The above findings necessitate a design methodology, and so we also provide an application-based design.

A protocol for a fixed-fixed beam design using a laser Doppler vibrometer (LDV), including the measurement of frequency tuning, modification of tuning capability, and avoidance of device failure and stiction, is presented. The superiority of the LDV method over the network analyzer is demonstrated due to its higher mode capability.

Tasarım ve karakterizasyon yöntemleri verimli geniş sıra Tunable MEMS filtreler için

Here, we demonstrate the advantages of the laser Doppler vibrometer (LDV) over conventional techniques (the network analyzer), as well as the techniques ...