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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

DOI :

10.3791/50770-v

December 2nd, 2013

December 2nd, 2013

7,111 Views

1Institute of Chemistry, The Hebrew University of Jerusalem, 2Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem

A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

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Monolayer Contact Doping

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