JoVE Logo
Faculty Resource Center

Sign In

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

DOI :

10.3791/54651-v

November 7th, 2016

November 7th, 2016

7,889 Views

1Institution of Chemistry, Academia Sinica, 2Department of Chemistry, National Central University

This manuscript describes the bending process of an organic single crystal-based field-effect transistor to maintain a functioning device for electronic property measurement. The results suggest that bending causes changes in the molecular spacing in the crystal and thus in the charge hopping rate, which is important in flexible electronics.

Tags

Bending

-- Views

Related Videos

article

Controlling the Size, Shape and Stability of Supramolecular Polymers in Water

article

Encapsulation and Permeability Characteristics of Plasma Polymerized Hollow Particles

article

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

article

Casting Protocols for the Production of Open Cell Aluminum Foams by the Replication Technique and the Effect on Porosity

article

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

article

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

article

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

article

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

article

Fabric Moisture Uniform Control to Study the Influence of Air Impingement Parameters on Fabric Drying Characteristics

article

Study of a Dot-patterning Process on Flexible Materials using Impact Print-Type Hot Embossing Technology

JoVE Logo

Privacy

Terms of Use

Policies

Research

Education

ABOUT JoVE

Copyright © 2024 MyJoVE Corporation. All rights reserved