Sign In

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

2.1K Views

•

06:57 min

•

July 17th, 2020

DOI :

10.3791/58897-v

July 17th, 2020

•

Motoki Yako¹, Yasuhiko Ishikawa², Eiji Abe¹, Kazumi Wada¹^,³

¹Department of Materials Engineering, The University of Tokyo, ²Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, ³Department of Materials Science and Engineering, Massachusetts Institute of Technology

Chapters

Transcript

Summary

Explore More Videos

Dislocation Reduction

Germanium Epitaxial Layers

Semicylindrical Voids

Threading Dislocation Density

Selective Epitaxial Growth

Boron doped P silicon

Silicon Dioxide

Buffered Hydrofluoric Acid

Germanium Growth

article

Now Playing

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

2.1K Views

Copyright © 2025 MyJoVE Corporation. All rights reserved